JPWO2020065700A1 - 金属接合体および金属接合体の製造方法、並びに半導体装置および導波路 - Google Patents
金属接合体および金属接合体の製造方法、並びに半導体装置および導波路 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 26
- 229910017518 Cu Zn Inorganic materials 0.000 claims abstract description 73
- 229910017752 Cu-Zn Inorganic materials 0.000 claims abstract description 73
- 229910017943 Cu—Zn Inorganic materials 0.000 claims abstract description 73
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010949 copper Substances 0.000 description 48
- 238000005304 joining Methods 0.000 description 30
- 239000011701 zinc Substances 0.000 description 20
- 239000007790 solid phase Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
Description
図1は、この発明を実施するための実施の形態1に係る金属接合体の接合方法の説明図である。図1(a)に示す金属接合体は、接合を開始する前の状態を示しており、それぞれの金属製の基材1の表面にCu−Zn層2、Cu層3およびAg層4が順次形成されている。図1(b)は、それぞれの基材1をAg層4同士で接触させた状態を示している。ここで、金属製の基材1の形状は例えば立方体のブロックであり、この金属製の基材1の一部もしくは全体の表面に金属層を順次形成している。
このようにして得られた接合強度(相対値)が1より大きい場合は接合信頼性が高いと判断し、1以下の場合はAg接合と同等かそれ以下であるので接合信頼性は低いと判断した。
図5は、この発明を実施するための実施の形態2を示す導波路の接合方法の説明図である。本実施の形態では、内部に断面が方形の空洞を備えた方形導波路(方形導波管ともいう)を例にとって説明する。
図7は、この発明を実施するための実施の形態3を示す半導体装置の接合方法の説明図である。本実施の形態の半導体装置は、半導体素子を金属接合体を介して絶縁基板に接合したものである。半導体素子としては、Si(シリコン)、GaAs(ガリウム砒素)、SiC(シリコンカーバイド)、GaN(窒化ガリウム)、ダイヤモンドなどを主成分とする半導体素子が挙げられる。また、絶縁基板としては、セラミックス基板やDCB(Direct Copper Bond)基板などが挙げられる。
Claims (5)
- Ag−Cu−Zn層の両面にCu−Zn層が接合された金属接合体であって、
前記Ag−Cu−Zn層は、全体を100atm%としたときに、Cu成分が1atm%以上10atm%以下、Zn成分が1atm%以上40atm%以下および残部がAg成分であり、
前記Cu−Zn層は、全体を100atm%としたときに、Zn成分が10atm%以上40atm%以下および残部がCu成分である
ことを特徴とする金属接合体。 - 半導体素子と絶縁基板とが
請求項1の金属接合体で接合されている
ことを特徴とする半導体装置。 - 長尺状の上部材と、
この上部材と請求項1の金属接合体で接合され、前記上部材と空洞を形成する長尺状の下部材とで構成されている
ことを特徴とする導波路。 - Cu−Zn層、Cu層およびAg層が順次形成された積層体を接合して金属接合体を形成する金属接合体の製造方法であって、
前記積層体の前記Ag層を互いに対向させて接触させる工程と、
前記Ag層同士が接触された前記積層体を加圧しながら300℃以上400℃未満の温度で加熱処理する工程と
を備えたことを特徴とする金属接合体の製造方法。 - 前記Cu層の厚さが、0.1μm以上5μm以下であり、
前記Ag層の厚さが、0.1μm以上15μm以下である
ことを特徴とする請求項4に記載の金属接合体の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2018/035292 WO2020065700A1 (ja) | 2018-09-25 | 2018-09-25 | 金属接合体および金属接合体の製造方法、並びに半導体装置および導波路 |
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JP6516949B1 JP6516949B1 (ja) | 2019-05-22 |
JPWO2020065700A1 true JPWO2020065700A1 (ja) | 2021-01-07 |
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