JPWO2020005901A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020005901A5 JPWO2020005901A5 JP2020571397A JP2020571397A JPWO2020005901A5 JP WO2020005901 A5 JPWO2020005901 A5 JP WO2020005901A5 JP 2020571397 A JP2020571397 A JP 2020571397A JP 2020571397 A JP2020571397 A JP 2020571397A JP WO2020005901 A5 JPWO2020005901 A5 JP WO2020005901A5
- Authority
- JP
- Japan
- Prior art keywords
- sample rod
- resistivity
- diameter
- rod
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 claims 32
- 238000000034 method Methods 0.000 claims 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 230000008033 biological extinction Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000002893 slag Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/020,698 US10793969B2 (en) | 2018-06-27 | 2018-06-27 | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
| US16/020,698 | 2018-06-27 | ||
| PCT/US2019/038923 WO2020005901A1 (en) | 2018-06-27 | 2019-06-25 | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021529147A JP2021529147A (ja) | 2021-10-28 |
| JPWO2020005901A5 true JPWO2020005901A5 (enrdf_load_stackoverflow) | 2022-06-14 |
| JP7467362B2 JP7467362B2 (ja) | 2024-04-15 |
Family
ID=67263097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020571397A Active JP7467362B2 (ja) | 2018-06-27 | 2019-06-25 | 単結晶シリコンインゴット製造中のサンプルロッド成長および抵抗率測定 |
Country Status (8)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10499357B1 (en) | 2018-08-09 | 2019-12-03 | Nec Corporation | Method and system for transmission of SUSI in the NAS procedure |
| WO2020131458A1 (en) * | 2018-12-21 | 2020-06-25 | Globalwafers Co., Ltd. | Sample rod center slab resistivity measurement during single crystal silicon ingot production |
| US11739437B2 (en) | 2018-12-27 | 2023-08-29 | Globalwafers Co., Ltd. | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
| US12351938B2 (en) | 2022-02-10 | 2025-07-08 | Globalwafers Co., Ltd. | Methods for producing a product ingot having low oxygen content |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395629A (ja) | 1986-10-13 | 1988-04-26 | Hitachi Ltd | 半導体単結晶インゴツトの加工指示装置 |
| JP2869300B2 (ja) * | 1992-08-07 | 1999-03-10 | 三菱マテリアル株式会社 | 半導体ウェーハの熱処理装置 |
| US5449883A (en) * | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
| JP3341378B2 (ja) * | 1993-08-25 | 2002-11-05 | 富士通株式会社 | シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法 |
| JP4370499B2 (ja) | 2002-12-27 | 2009-11-25 | 信越半導体株式会社 | 文字読み取り方法及び装置並びに結晶検査方法 |
| US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| US7521382B2 (en) | 2005-05-19 | 2009-04-21 | Memc Electronic Materials, Inc. | High resistivity silicon structure and a process for the preparation thereof |
| JP5767461B2 (ja) | 2010-12-14 | 2015-08-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェーハの製造方法 |
| CN102181919B (zh) * | 2011-04-13 | 2012-12-26 | 天津市环欧半导体材料技术有限公司 | 一种控制直拉硅单晶头部电阻率的方法 |
| JP5817542B2 (ja) * | 2012-01-12 | 2015-11-18 | 信越半導体株式会社 | シリコン基板の製造方法 |
| CN103173867A (zh) * | 2013-04-16 | 2013-06-26 | 江西豪安能源科技有限公司 | 一种消除太阳能单晶头部热施主导致电阻失真的方法 |
| JP6168011B2 (ja) * | 2014-08-19 | 2017-07-26 | 信越半導体株式会社 | 単結晶育成装置及びその装置を用いた単結晶育成方法 |
| FR3045831B1 (fr) * | 2015-12-21 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'etalonnage d'un four de recuit utilise pour former des donneurs thermiques |
| US10920337B2 (en) | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
-
2018
- 2018-06-27 US US16/020,698 patent/US10793969B2/en active Active
-
2019
- 2019-06-25 EP EP19739815.9A patent/EP3814555B1/en active Active
- 2019-06-25 KR KR1020237043974A patent/KR20240005130A/ko not_active Ceased
- 2019-06-25 SG SG11202012909QA patent/SG11202012909QA/en unknown
- 2019-06-25 WO PCT/US2019/038923 patent/WO2020005901A1/en not_active Application Discontinuation
- 2019-06-25 JP JP2020571397A patent/JP7467362B2/ja active Active
- 2019-06-25 KR KR1020207038024A patent/KR20210044190A/ko not_active Ceased
- 2019-06-25 CN CN201980043704.8A patent/CN112469850A/zh active Pending
- 2019-06-25 EP EP23208255.2A patent/EP4317546A3/en active Pending
- 2019-06-26 TW TW111150725A patent/TWI800474B/zh active
- 2019-06-26 TW TW108122455A patent/TWI791859B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104515707A (zh) | 一种通电拉伸试件的温度测量方法及拉伸试验装置 | |
| CN108398336B (zh) | 一种获取高温拉伸试样断口的方法 | |
| CN105606647A (zh) | 一种检测互连焊点热迁移性能的装置与方法 | |
| CN109613051B (zh) | 一种采用对比法测量材料Seebeck系数的装置及方法 | |
| JPWO2020005901A5 (enrdf_load_stackoverflow) | ||
| JP2021529147A (ja) | 単結晶シリコンインゴット製造中のサンプルロッド成長および抵抗率測定 | |
| JP7678833B2 (ja) | 単結晶シリコンインゴットの製造中の不純物の蓄積を決定するための複数のサンプルロッドの成長 | |
| CN116295896A (zh) | 一种超级热电偶及其制备方法 | |
| CN105651618B (zh) | 一种将热电偶丝配置于试样的方法 | |
| Logan | Precipitation of copper in germanium | |
| CN111982900B (zh) | 一种控制线材热模拟试样冷却模式的实验方法 | |
| Hill | An investigation of palladium oxidation in the platinum/palladium thermocouple system | |
| JP6387907B2 (ja) | 単結晶の製造方法 | |
| CN105445105B (zh) | 一种铝合金电缆导体抗蠕变性能的检测方法 | |
| FR2461941A1 (fr) | Dispositif pour le prelevement d'un echantillon de metal ou d'alliage metallique sous forme de bain de fusion et pour la mesure de la courbe de refroidissement de cet echantillon | |
| CN101788281B (zh) | 非晶合金自由体积的测定方法 | |
| Ogura et al. | Effects of heat treatment on the inhomogeneity of the Pt/Pd thermocouple at the Cu freezing point | |
| CN113655094B (zh) | 一种确定硅片导电类型的方法 | |
| KR100413646B1 (ko) | 온도검출소자 | |
| CN102243116A (zh) | Pcd刀片热电特性快速检测方法及检测装置 | |
| Halawa et al. | Performance, Thermoelectric Homogeneity and Stability of Au/Pt and Pt‐10% Rh/Pt Thermocouples | |
| Abdelaziz et al. | Stability and calibration of platinum/palladium thermocouples following heat treatment | |
| JPH0484733A (ja) | 高温粘性測定装置 | |
| JPH03273132A (ja) | ガラス歪点試験装置の電気炉 | |
| Jahan et al. | The ‘Mini‐Coil’Method for Calibration of Thermocouples at the Palladium Point |