JPWO2019216339A1 - 太陽電池の製造方法及びそれに用いるホルダ - Google Patents
太陽電池の製造方法及びそれに用いるホルダ Download PDFInfo
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
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- 230000001443 photoexcitation Effects 0.000 description 1
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
本開示の第1の実施形態について図面を参照しながら説明する。
処理であってもよい。
以下、本実施形態に係る太陽電池10の製造方法について図3〜図9を参照しながら説明する。
上述した太陽電池10の製造方法から以下のことがいえる。まず、図8に示す工程では、エッチング溶液によりリフトオフ層LF(図7を参照)を除去すると、このリフトオフ層LFの上に堆積していた真性半導体層12n及びn型半導体層13nも結晶基板11から同時に除去される(いわゆるリフトオフ)。この工程では、図6に示す工程での、例えばフォトリソグラフィ法を用いた場合と比べて、フォトリソグラフィ法に使用するレジスト塗布工程及び現像工程を要しない。このため、n型半導体層13nが簡便にパターン化される。
まず、結晶基板として、厚さが200μmの単結晶シリコン基板を採用した。単結晶シリコン基板の両主面に異方性エッチングを行った。これにより、結晶基板にピラミッド型のテクスチャ構造が形成された。
結晶基板をCVD装置に導入し、導入した結晶基板の両主面に、シリコン製の真性半導体層(膜厚8nm)を形成した。製膜条件は、基板温度を150℃、圧力を120Pa、SiH4/H2流量比の値を3/10、及びパワー密度を0.011W/cm2とした。
両主面に真性半導体層を形成した結晶基板をCVD装置に導入し、裏側主面の真性半導体層の上に、p型水素化非晶質シリコン系薄膜(膜厚10nm)を形成した。製膜条件は、基板温度を150℃、圧力を60Pa、SiH4/B2H6流量比の値を1/3、及びパワー密度を0.01W/cm2とした。また、B2H6ガスの流量は、B2H6をH2により5000ppmまで希釈した希釈ガスの流量である。
プラズマCVD装置を用いて、p型水素化非晶質シリコン系薄膜の上に、主成分を酸化ケイ素(SiOX)とするリフトオフ層を200nmの膜厚となるように形成した。
まず、リフトオフ層が形成された結晶基板の裏側主面に感光性レジスト膜を製膜した。これをフォトリソグラフィ法により露光及び現像を行って、リフトオフ層、p型半導体層及び真性半導体層を除去する領域を露出した。複数の層が形成された結晶基板を、エッチング剤として1質量%のフッ化水素を含有する加水フッ硝酸に浸漬し、リフトオフ層を除去した。純水によるリンスの後に、濃度5.5質量%のフッ化水素酸に20ppmのオゾンを混合したオゾン/フッ酸液に浸漬し、リフトオフ層の除去により露出したp型半導体層とその直下の真性半導体層とを除去した。以下、この工程をパターニング工程という。
第1半導体層パターニング工程の後に、露出した裏側主面を濃度が2質量%のフッ化水素酸によって洗浄した結晶基板をCVD装置に導入し、裏側主面に真性半導体層(膜厚8nm)を1回目の真性半導体層と同様の成膜条件で形成した。続いて、形成した真性半導体層の上に、n型水素化非晶質シリコン系薄膜(膜厚10nm)を形成した。製膜条件は、基板温度1を150℃、圧力を60Pa、SiH4/PH3/H2流量比の値を1/2、及びパワー密度を0.01W/cm2とした。また、PH3ガスの流量は、PH3をH2により5000ppmまで希釈した希釈ガスの流量である。
n型半導体層が形成された結晶基板を、[表1]に記載の液性調整剤を含む濃度5質量%のフッ化水素酸(エッチング溶液)に浸漬して、リフトオフ層、該リフトオフ層を覆うn型半導体層、及びリフトオフ層とn型半導体層との間にある真性半導体層をまとめて除去した。以下、この工程をリフトオフ工程という。
エッチング溶液は、濃度5質量%のフッ化水素酸を主成分とする溶液とし、また、リンス液は純水を主成分とする液体として、[表1]に記載の液性調整剤をそれぞれ添加した。エタノールは1級エタノール(和光純薬製)を用いた。塩化ナトリウム水溶液は、塩化ナトリウム(和光純薬製)を15質量%となるように水溶液とした。
マグネトロンスパッタリング装置を用いて、透明電極層の基となる酸化物膜(膜厚100nm)を、結晶基板の導電型半導体層の上に形成した。また、低反射層として、結晶基板の受光面側に窒化シリコン層を形成した。透明導電性酸化物としては、酸化スズを濃度10質量%で含有した酸化インジウム(ITO)をターゲットとして使用した。スパッタリング装置のチャンバ内にアルゴンと酸素との混合ガスを導入し、チャンバ内の圧力を0.6Paに設定した。アルゴンと酸素との混合比率は、抵抗率が最も低くなる(いわゆるボトム)条件とした。また、直流電源を用いて、0.4W/cm2の電力密度で成膜を行った。
ソーラシミュレータにより、AM(エアマス:air mass)1.5の基準太陽光を100mW/cm2の光量で照射して、太陽電池の変換効率(Eff(%))を測定した。実施例1の変換効率(太陽電池特性)の最高値を1.00とし、その相対値を基にした結果を[表1]に記載した。
以下、本開示の第2の実施形態について図面を参照しながら説明する。
11 結晶基板(半導体基板)
12 真性半導体層
13 導電型半導体層
13p p型半導体層[第1導電型の第1半導体層/第2導電型の第2半導体層]
13n n型半導体層[第2導電型の第2半導体層/第1導電型の第1半導体層]
15 電極層
17 透明電極層
18 金属電極層
19 被覆部
LF リフトオフ層
40 基板ホルダ(ホルダ)
41 筐体
42 支持部
42b 段差部
42c 突起部
Claims (14)
- 半導体基板における互いに対向する2つの主面の一方の主面上に、第1導電型の第1半導体層を形成する工程と、
前記第1半導体層上にリフトオフ層を形成する工程と、
前記リフトオフ層及び前記第1半導体層を選択的に除去する工程と、
前記リフトオフ層及び前記第1半導体層を含む前記一方の主面上に、第2導電型の第2半導体層を形成する工程と、
エッチング溶液を用いて、前記リフトオフ層を除去することにより、前記リフトオフ層を覆う前記第2半導体層を除去する工程と、
リンス液を用いて、前記半導体基板を洗浄する工程とを含み、
前記エッチング溶液又は前記リンス液において、前記リフトオフ層に対する接触角は、前記第2半導体層に対する接触角よりも小さく、
前記第2半導体層と前記エッチング溶液又は前記リンス液との接触角は、65°以上110°以下である太陽電池の製造方法。 - 請求項1に記載の太陽電池の製造方法において、
前記エッチング溶液又は前記リンス液の表面張力は、25mN/m以上85mN/m以下である太陽電池の製造方法。 - 請求項1又は2に記載の太陽電池の製造方法において、
前記第2半導体層は、非晶質シリコンで形成されている太陽電池の製造方法。 - 請求項1〜3のいずれか1項に記載の太陽電池の製造方法において、
前記第1半導体層及び第2半導体層は、非晶質シリコンで形成され、
前記リンス液又は前記エッチング溶液と前記第1半導体層との接触角をθ1とし、前記リンス液又は前記エッチング溶液と前記第2半導体層との接触角をθ2とすると、θ1<θ2の関係を満たす太陽電池の製造方法。 - 請求項1〜4のいずれか1項に記載の太陽電池の製造方法において、
前記リフトオフ層は、酸化ケイ素で形成され、
前記エッチング溶液はフッ化水素酸を含む溶液であり、液の表面張力を調整する液性調整剤が添加されている太陽電池の製造方法。 - 請求項5に記載の太陽電池の製造方法において、
前記液性調整剤は、低級アルコール又は無機塩である太陽電池の製造方法。 - 請求項1〜6のいずれか1項に記載の太陽電池の製造方法において、
前記リンス液は、水を主成分とする液体であり、
前記リンス液には、液性調整剤が添加されている太陽電池の製造方法。 - 請求項7に記載の太陽電池の製造方法において、
前記液性調整剤は、低級アルコール又は無機塩である太陽電池の製造方法。 - 請求項1〜8のいずれか1項に記載の太陽電池の製造方法において、
前記半導体基板を前記エッチング溶液及び前記リンス液に着液する際に、前記エッチング溶液及び前記リンス液の少なくとも一方において、前記半導体基板をその液面に対して傾斜した状態で着液させる傾斜着液を行う太陽電池の製造方法。 - 請求項9に記載の太陽電池の製造方法において、
前記傾斜着液において、前記半導体基板の前記液面とのなす角度を30°以上70°以下とする太陽電池の製造方法。 - 請求項1〜10のいずれか1項に記載の太陽電池の製造方法において、
前記半導体基板における前記2つの主面の少なくとも一方の主面上に、凹凸面を構成するテクスチャ構造が形成されている太陽電池の製造方法。 - 請求項9又は10に記載の太陽電池の製造方法において、
前記傾斜着液を行う際に、前記半導体基板における前記リフトオフ層が形成された前記一方の主面を上側にして着液する太陽電池の製造方法。 - 請求項9、10及び12のいずれか1項に記載の太陽電池の製造方法に用いるホルダであって、
前記半導体基板を収容する収容部を有する筐体を備え、
前記収容部は、1枚の前記半導体基板を支持する少なくとも1つの支持部を有し、
前記支持部の底面は、前記傾斜着液を行えるように、前記筐体の底面に対して傾斜しているホルダ。 - 請求項13に記載のホルダであって、
前記支持部は、平面視でU字状の桟状部材であり、
前記半導体基板は、前記桟状部材におけるU字状の開口部分から挿入され、
前記桟状部材の上面周縁部には、前記半導体基板の下面周縁部と接触する段差部が設けられ、
前記桟状部材におけるU字状の対向部分を連結する桟には、前記段差部との間に前記半導体基板の上面を支持可能な突起部が設けられているホルダ。
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