JPWO2019199834A5 - - Google Patents
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- Publication number
- JPWO2019199834A5 JPWO2019199834A5 JP2020555174A JP2020555174A JPWO2019199834A5 JP WO2019199834 A5 JPWO2019199834 A5 JP WO2019199834A5 JP 2020555174 A JP2020555174 A JP 2020555174A JP 2020555174 A JP2020555174 A JP 2020555174A JP WO2019199834 A5 JPWO2019199834 A5 JP WO2019199834A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- substrate
- gas
- silanol
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 claims 35
- 238000000034 method Methods 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 22
- 239000000463 material Substances 0.000 claims 8
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims 4
- ORJFXWYTRPGGRK-UHFFFAOYSA-N hydroxy-tris(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)CC)OC(C)(C)CC ORJFXWYTRPGGRK-UHFFFAOYSA-N 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 2
- 229910017109 AlON Inorganic materials 0.000 claims 2
- 229910018565 CuAl Inorganic materials 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 229910004491 TaAlN Inorganic materials 0.000 claims 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims 2
- 229910010041 TiAlC Inorganic materials 0.000 claims 2
- 229910010037 TiAlN Inorganic materials 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 229910010282 TiON Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 230000003301 hydrolyzing effect Effects 0.000 claims 2
- MBMITMZVBNZJTQ-UHFFFAOYSA-N hydroxy-bis[(2-methylpropan-2-yl)oxy]-propan-2-yloxysilane Chemical compound CC(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C MBMITMZVBNZJTQ-UHFFFAOYSA-N 0.000 claims 2
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862654760P | 2018-04-09 | 2018-04-09 | |
| US62/654,760 | 2018-04-09 | ||
| PCT/US2019/026590 WO2019199834A1 (en) | 2018-04-09 | 2019-04-09 | Method of forming a semiconductor device with air gaps for low capacitance interconnects |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021521637A JP2021521637A (ja) | 2021-08-26 |
| JPWO2019199834A5 true JPWO2019199834A5 (https=) | 2022-01-17 |
| JP2021521637A5 JP2021521637A5 (https=) | 2022-01-17 |
| JP7205929B2 JP7205929B2 (ja) | 2023-01-17 |
Family
ID=68099067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020555174A Active JP7205929B2 (ja) | 2018-04-09 | 2019-04-09 | 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11251077B2 (https=) |
| JP (1) | JP7205929B2 (https=) |
| KR (1) | KR102740088B1 (https=) |
| TW (1) | TWI790372B (https=) |
| WO (1) | WO2019199834A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113454266A (zh) * | 2019-01-22 | 2021-09-28 | 艾瑞科公司 | 使用催化剂阻断剂形成图案 |
| TWI766438B (zh) * | 2020-04-28 | 2022-06-01 | 台灣積體電路製造股份有限公司 | 半導體元件的製造方法 |
| US11955370B2 (en) * | 2020-04-28 | 2024-04-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices and methods of manufacture |
| KR20230161452A (ko) * | 2021-03-26 | 2023-11-27 | 도쿄엘렉트론가부시키가이샤 | 알루미늄 알콕시드 산화제를 사용하는 반도체 소자를 위한 산화알루미늄 막의 원자층 증착 |
| US11903181B2 (en) * | 2021-06-23 | 2024-02-13 | Fujian Jinhua Integrated Circuit Co., Ltd. | Semiconductor structure and method for forming the same |
| US12593437B2 (en) | 2021-06-23 | 2026-03-31 | Fujian Jinhua Integrated Circuit Co., Ltd. | Semiconductor structure and method for forming the same |
| JP2024145536A (ja) * | 2023-03-31 | 2024-10-15 | 東京エレクトロン株式会社 | 膜形成方法及び基板処理装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004241687A (ja) | 2003-02-07 | 2004-08-26 | Toshiba Corp | トレンチキャパシタの形成方法及び半導体装置 |
| US8058138B2 (en) * | 2008-07-17 | 2011-11-15 | Micron Technology, Inc. | Gap processing |
| US8916435B2 (en) * | 2011-09-09 | 2014-12-23 | International Business Machines Corporation | Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory |
| JP5679581B2 (ja) * | 2011-12-27 | 2015-03-04 | 東京エレクトロン株式会社 | 成膜方法 |
| KR101402962B1 (ko) * | 2012-04-13 | 2014-06-03 | 한국생산기술연구원 | 반도체 금속배선내 에어갭 형성 방법 |
| WO2015153040A1 (en) * | 2014-04-01 | 2015-10-08 | Applied Materials, Inc. | Integrated metal spacer and air gap interconnect |
| US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
| US9520284B1 (en) * | 2015-11-13 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | Ion beam activated directional deposition |
| US9728447B2 (en) * | 2015-11-16 | 2017-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-barrier deposition for air gap formation |
| US10224235B2 (en) * | 2016-02-05 | 2019-03-05 | Lam Research Corporation | Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| US10453737B2 (en) * | 2017-04-11 | 2019-10-22 | Tokyo Electron Limited | Method of filling retrograde recessed features with no voids |
| US10410858B2 (en) * | 2017-08-11 | 2019-09-10 | Tokyo Electron Limited | Selective film deposition using halogen deactivation |
| JP7277871B2 (ja) * | 2017-10-04 | 2023-05-19 | 東京エレクトロン株式会社 | 相互接続のためのルテニウム金属機能フィリング |
| CN109801880B (zh) * | 2017-11-17 | 2021-05-18 | 联华电子股份有限公司 | 动态随机存取存储器的埋入式字符线及其制作方法 |
| US10781519B2 (en) * | 2018-06-18 | 2020-09-22 | Tokyo Electron Limited | Method and apparatus for processing substrate |
-
2019
- 2019-04-09 TW TW108112305A patent/TWI790372B/zh active
- 2019-04-09 KR KR1020207032197A patent/KR102740088B1/ko active Active
- 2019-04-09 JP JP2020555174A patent/JP7205929B2/ja active Active
- 2019-04-09 WO PCT/US2019/026590 patent/WO2019199834A1/en not_active Ceased
- 2019-04-09 US US16/379,402 patent/US11251077B2/en active Active
-
2022
- 2022-01-10 US US17/571,688 patent/US11646227B2/en active Active
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