JP2022027701A5 - - Google Patents

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Publication number
JP2022027701A5
JP2022027701A5 JP2021125407A JP2021125407A JP2022027701A5 JP 2022027701 A5 JP2022027701 A5 JP 2022027701A5 JP 2021125407 A JP2021125407 A JP 2021125407A JP 2021125407 A JP2021125407 A JP 2021125407A JP 2022027701 A5 JP2022027701 A5 JP 2022027701A5
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JP
Japan
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layer
modified layer
patterned substrate
rotating platen
modified
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JP2021125407A
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Japanese (ja)
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JP7702772B2 (ja
JP2022027701A (ja
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Priority claimed from US16/944,563 external-priority patent/US11823910B2/en
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JP2021125407A 2020-07-31 2021-07-30 選択的原子層エッチング（ａｌｅ）を用いた平面化を改善するシステムおよび方法 Active JP7702772B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/944563 2020-07-31
US16/944,563 US11823910B2 (en) 2020-07-31 2020-07-31 Systems and methods for improving planarity using selective atomic layer etching (ALE)

Publications (3)

Publication Number Publication Date
JP2022027701A JP2022027701A (ja) 2022-02-14
JP2022027701A5 true JP2022027701A5 (https=) 2024-05-20
JP7702772B2 JP7702772B2 (ja) 2025-07-04

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JP2021125407A Active JP7702772B2 (ja) 2020-07-31 2021-07-30 選択的原子層エッチング（ａｌｅ）を用いた平面化を改善するシステムおよび方法

Country Status (3)

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US (2) US11823910B2 (https=)
JP (1) JP7702772B2 (https=)
KR (1) KR20220016002A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250046614A1 (en) * 2023-07-31 2025-02-06 Tokyo Electron Limited SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS
JP2025150574A (ja) * 2024-03-27 2025-10-09 東京エレクトロン株式会社 成膜方法及び成膜装置
KR102826840B1 (ko) 2024-11-13 2025-06-30 브이엠 주식회사 고온 기체 공급형 공정 시스템

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
JPS61289635A (ja) * 1985-06-17 1986-12-19 Nippon Telegr & Teleph Corp <Ntt> 表面平坦化方法
JPS63241934A (ja) * 1987-03-30 1988-10-07 Sony Corp エツチング方法
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US7314835B2 (en) * 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
CN101903990B (zh) * 2007-12-18 2013-11-06 杨秉春 嵌入式互连系统的形成方法、双重嵌入式互连系统的形成方法及集成电路装置的形成方法
JP6294194B2 (ja) * 2014-09-02 2018-03-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6723135B2 (ja) * 2015-12-25 2020-07-15 東京エレクトロン株式会社 保護膜形成方法
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
US20170345665A1 (en) * 2016-05-26 2017-11-30 Tokyo Electron Limited Atomic layer etching systems and methods
US10832909B2 (en) * 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
US10170300B1 (en) * 2017-11-30 2019-01-01 Tokyo Electron Limited Protective film forming method
US11087959B2 (en) * 2020-01-09 2021-08-10 Nano-Master, Inc. Techniques for a hybrid design for efficient and economical plasma enhanced atomic layer deposition (PEALD) and plasma enhanced chemical vapor deposition (PECVD)

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