JP7205929B2 - 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 - Google Patents

低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Download PDF

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JP7205929B2
JP7205929B2 JP2020555174A JP2020555174A JP7205929B2 JP 7205929 B2 JP7205929 B2 JP 7205929B2 JP 2020555174 A JP2020555174 A JP 2020555174A JP 2020555174 A JP2020555174 A JP 2020555174A JP 7205929 B2 JP7205929 B2 JP 7205929B2
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substrate
precursor
gas
exposing
silanol
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JPWO2019199834A5 (https=
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タピリー，カンダバラ
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Tokyo Electron Ltd
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    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
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    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
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    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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  • Chemical & Material Sciences (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2020555174A 2018-04-09 2019-04-09 低容量相互接続用のエアギャップを備えた半導体デバイスを形成する方法 Active JP7205929B2 (ja)

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US201862654760P 2018-04-09 2018-04-09
US62/654,760 2018-04-09
PCT/US2019/026590 WO2019199834A1 (en) 2018-04-09 2019-04-09 Method of forming a semiconductor device with air gaps for low capacitance interconnects

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JP2021521637A JP2021521637A (ja) 2021-08-26
JPWO2019199834A5 JPWO2019199834A5 (https=) 2022-01-17
JP2021521637A5 JP2021521637A5 (https=) 2022-01-17
JP7205929B2 true JP7205929B2 (ja) 2023-01-17

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US (2) US11251077B2 (https=)
JP (1) JP7205929B2 (https=)
KR (1) KR102740088B1 (https=)
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Families Citing this family (7)

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CN113454266A (zh) * 2019-01-22 2021-09-28 艾瑞科公司 使用催化剂阻断剂形成图案
TWI766438B (zh) * 2020-04-28 2022-06-01 台灣積體電路製造股份有限公司 半導體元件的製造方法
US11955370B2 (en) * 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
KR20230161452A (ko) * 2021-03-26 2023-11-27 도쿄엘렉트론가부시키가이샤 알루미늄 알콕시드 산화제를 사용하는 반도체 소자를 위한 산화알루미늄 막의 원자층 증착
US11903181B2 (en) * 2021-06-23 2024-02-13 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
US12593437B2 (en) 2021-06-23 2026-03-31 Fujian Jinhua Integrated Circuit Co., Ltd. Semiconductor structure and method for forming the same
JP2024145536A (ja) * 2023-03-31 2024-10-15 東京エレクトロン株式会社 膜形成方法及び基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120040534A1 (en) 2008-07-17 2012-02-16 Micron Technology, Inc. Gap processing
US9520284B1 (en) 2015-11-13 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion beam activated directional deposition
US20170229337A1 (en) 2016-02-05 2017-08-10 Lam Research Corporation Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
US20190157274A1 (en) 2017-11-17 2019-05-23 United Microelectronics Corp. Buried word line of a dynamic random access memory and method for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241687A (ja) 2003-02-07 2004-08-26 Toshiba Corp トレンチキャパシタの形成方法及び半導体装置
US8916435B2 (en) * 2011-09-09 2014-12-23 International Business Machines Corporation Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
JP5679581B2 (ja) * 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
KR101402962B1 (ko) * 2012-04-13 2014-06-03 한국생산기술연구원 반도체 금속배선내 에어갭 형성 방법
WO2015153040A1 (en) * 2014-04-01 2015-10-08 Applied Materials, Inc. Integrated metal spacer and air gap interconnect
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9728447B2 (en) * 2015-11-16 2017-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-barrier deposition for air gap formation
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10453737B2 (en) * 2017-04-11 2019-10-22 Tokyo Electron Limited Method of filling retrograde recessed features with no voids
US10410858B2 (en) * 2017-08-11 2019-09-10 Tokyo Electron Limited Selective film deposition using halogen deactivation
JP7277871B2 (ja) * 2017-10-04 2023-05-19 東京エレクトロン株式会社 相互接続のためのルテニウム金属機能フィリング
US10781519B2 (en) * 2018-06-18 2020-09-22 Tokyo Electron Limited Method and apparatus for processing substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120040534A1 (en) 2008-07-17 2012-02-16 Micron Technology, Inc. Gap processing
US9520284B1 (en) 2015-11-13 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Ion beam activated directional deposition
US20170229337A1 (en) 2016-02-05 2017-08-10 Lam Research Corporation Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
US20190157274A1 (en) 2017-11-17 2019-05-23 United Microelectronics Corp. Buried word line of a dynamic random access memory and method for fabricating the same

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US11251077B2 (en) 2022-02-15
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US20190311947A1 (en) 2019-10-10
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