JPWO2019142320A1 - 半導体装置、その製造方法及び電力変換装置 - Google Patents
半導体装置、その製造方法及び電力変換装置 Download PDFInfo
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- JPWO2019142320A1 JPWO2019142320A1 JP2019565653A JP2019565653A JPWO2019142320A1 JP WO2019142320 A1 JPWO2019142320 A1 JP WO2019142320A1 JP 2019565653 A JP2019565653 A JP 2019565653A JP 2019565653 A JP2019565653 A JP 2019565653A JP WO2019142320 A1 JPWO2019142320 A1 JP WO2019142320A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000011347 resin Substances 0.000 claims abstract description 50
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 39
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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Abstract
Description
図1は、実施の形態1に係る半導体装置を示す断面図である。図2は、実施の形態1に係る第1及び第2の位置決め樹脂を示す平面図である。本実施の形態に係る半導体装置は、例えば家電用、産業用、自動車用、電車用などに広く用いられるパワーモジュールである。
図5は、実施の形態2に係る第1の位置決め樹脂を示す平面図である。第1の位置決め樹脂4は、図2ではチップ全周にわたって線状に配置されているが、図5では複数の点状に配置されている。その他の構成は実施の形態1と同様である。この場合でも第1の板はんだ5の位置決めを行うことができる。さらに、樹脂の塗布量を削減してコストを低減し、塗布時間を削減して生産性を向上することができる。なお、同様に第2の位置決め樹脂7を複数の点状に配置してもよい。
本実施の形態は、上述した実施の形態1又は2に係る半導体装置を電力変換装置に適用したものである。電力変換装置は、例えば、インバータ装置、コンバータ装置、サーボアンプ、電源ユニットなどである。本発明は特定の電力変換装置に限定されるものではないが、以下、三相のインバータに本発明を適用した場合について説明する。
Claims (7)
- 絶縁基板の電極の上に環状に第1の位置決め樹脂を形成する工程と、
前記第1の位置決め樹脂の環の内側において前記電極の上に、前記第1の位置決め樹脂よりも厚みが薄い第1の板はんだを配置する工程と、
前記第1の板はんだの上に半導体チップを配置する工程と、
前記第1の板はんだを溶融して前記半導体チップの下面を前記電極に接合する工程とを備えることを特徴とする半導体装置の製造方法。 - 前記半導体チップは前記第1の位置決め樹脂の環の内側に入り込んでいることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1の位置決め樹脂は複数の点状に配置されていることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記半導体チップの上面に環状に第2の位置決め樹脂を形成する工程と、
前記第2の位置決め樹脂の環の内側において前記半導体チップの上面に、前記第2の位置決め樹脂よりも厚みが薄い第2の板はんだを配置する工程と、
前記第2の板はんだの上に配線電極を配置する工程と、
前記第2の板はんだを溶融して前記配線電極を前記半導体チップの上面に接合する工程とを更に備えることを特徴とする請求項1〜3の何れか1項に記載の半導体装置の製造方法。 - 前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜4の何れか1項に記載の半導体装置の製造方法。
- 電極を有する絶縁基板と、
前記電極の上に環状に設けられた位置決め樹脂と、
前記位置決め樹脂の環の内側において前記電極の上に設けられ、前記位置決め樹脂よりも厚みが薄いはんだと、
前記はんだにより前記電極に接合された半導体チップとを備え、
前記位置決め樹脂は複数の点状に配置されていることを特徴とする半導体装置。 - 請求項6に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路とを備えることを特徴とする電力変換装置。
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JP2001298033A (ja) * | 2000-04-12 | 2001-10-26 | Hitachi Ltd | 半導体装置 |
JP2005026628A (ja) * | 2003-07-03 | 2005-01-27 | Toyota Motor Corp | 半導体素子実装方法 |
JP2017204575A (ja) * | 2016-05-12 | 2017-11-16 | 株式会社日立製作所 | パワーモジュール、電力変換装置、及びパワーモジュールの製造方法 |
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JP3822040B2 (ja) * | 2000-08-31 | 2006-09-13 | 株式会社ルネサステクノロジ | 電子装置及びその製造方法 |
US8236666B2 (en) * | 2007-07-17 | 2012-08-07 | Mitsubishi Electric Corporation | Semiconductor device and process for producing same |
JP2011222553A (ja) * | 2010-04-02 | 2011-11-04 | Denso Corp | 半導体チップ内蔵配線基板及びその製造方法 |
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JP5954075B2 (ja) * | 2012-09-21 | 2016-07-20 | ソニー株式会社 | 半導体装置及び半導体装置の製造方法 |
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