JPWO2018100850A1 - 基板処理装置、天井ヒータおよび半導体装置の製造方法 - Google Patents
基板処理装置、天井ヒータおよび半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000012545 processing Methods 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 84
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 15
- 230000020169 heat generation Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 65
- 238000009826 distribution Methods 0.000 description 36
- 239000007789 gas Substances 0.000 description 34
- 239000000112 cooling gas Substances 0.000 description 11
- 238000004891 communication Methods 0.000 description 6
- 230000006641 stabilisation Effects 0.000 description 6
- 238000011105 stabilization Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (12)
- 複数枚の基板を縦方向に並べて内部に収容する反応管と、 前記反応管の側方から前記反応管内を加熱する第1ヒータと、 前記反応管の上方から前記反応管内を加熱する第2ヒータと、を備え、 前記第2ヒータは、 前記第1ヒータで加熱した際の前記反応管内の上方に収容された前記基板の低温部に対応する領域における前記第2ヒータの発熱量を、前記基板の高温部に対応する領域における発熱量よりも大きくするよう構成される基板処理装置。
- 前記基板の前記低温部に対応する領域の前記第2ヒータの電流密度を前記基板の前記高温部に対応する領域の電流密度よりも高くするよう構成される請求項1に記載の基板処理装置。
- 前記基板の前記低温部に対応する領域は前記第2ヒータの中心部であり、前記基板の前記高温部に対応する領域は前記第2ヒータの外周部である請求項2に記載の基板処理装置。
- 前記第2ヒータの発熱体の線幅は、前記中心部よりも前記外周部の方が広くなるように形成されている請求項3に記載の基板処理装置。
- 前記中心部の前記発熱体間の距離よりも前記外周部の前記発熱体間の間隔の方が広くなるように形成されている請求項4に記載の基板処理装置。
- 前記発熱体と給電部との接続端部は前記天井ヒータの中心部に形成される請求項5に記載の基板処理装置。
- 前記発熱体は、前記接続端部を起点として、複数の折り返し点で折り返しつつ、同心円状に一定間隔を空けて蛇行するように形成される請求項6に記載の基板処理装置。
- 前記第2ヒータの直径は前記基板の直径以上である請求項7に記載の基板処理装置。
- 前記第2ヒータは、前記中心部と前記外周部とで独立して制御可能に構成されている請求項3に記載の基板処理装置。
- 前記第1ヒータの温度を検出する第1検出部と、前記第2ヒータの温度を検出する第2検出部と、 前記第1検出部および前記第2検出部の検出値に基づき前記第1ヒータおよび前記第2ヒータを制御するよう構成される制御部と、をさらに有する請求項9に記載の基板処理装置。
- 複数枚の基板を縦方向に並べて内部に収容する反応管の側方から前記反応管内を加熱する側部ヒータを備える基板処理装置の前記反応管の上方に設置される天井ヒータであって、 前記側部ヒータで加熱した際の前記反応管内の上方に収容された前記基板の低温部に対応する領域における発熱量を前記基板の高温部に対応する領域における発熱量よりも大きくするよう構成される天井ヒータ。
- 複数枚の基板を反応管内に搬入する工程と、 前記反応管の側方に設置された第1ヒータと前記反応管の上方に設置された第2ヒータとにより、前記反応管内の前記基板を加熱する工程と、 前記反応管内に処理ガスを供給し、前記基板を処理する工程と、を有し、 前記第2ヒータは、 前記第1ヒータで加熱した際の前記反応管内の上方に収容された前記基板の低温部に対応する領域における前記第2ヒータの発熱量を前記基板の高温部に対応する領域における発熱量よりも大きくするよう構成される半導体装置の製造方法。
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JP2016234166 | 2016-12-01 | ||
JP2016234166 | 2016-12-01 | ||
PCT/JP2017/034052 WO2018100850A1 (ja) | 2016-12-01 | 2017-09-21 | 基板処理装置、天井ヒータおよび半導体装置の製造方法 |
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US (1) | US20190284696A1 (ja) |
JP (1) | JP6912497B2 (ja) |
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CN113272940B (zh) * | 2019-01-07 | 2024-03-26 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法以及加热器单元 |
JP1651619S (ja) * | 2019-07-11 | 2020-01-27 | ||
JP1651618S (ja) * | 2019-07-11 | 2020-01-27 | ||
JP1651623S (ja) * | 2019-07-18 | 2020-01-27 | ||
JP1684469S (ja) * | 2020-09-24 | 2021-05-10 | 基板処理装置用天井ヒータ | |
KR20230053689A (ko) * | 2020-09-30 | 2023-04-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 온도 제어 프로그램, 반도체 장치의 제조 방법 및 온도 제어 방법 |
CN117999639A (zh) * | 2021-12-06 | 2024-05-07 | 株式会社国际电气 | 顶部加热器、半导体装置的制造方法、基板处理方法以及基板处理装置 |
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JP2004214283A (ja) * | 2002-12-27 | 2004-07-29 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
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JPH0927488A (ja) * | 1995-07-10 | 1997-01-28 | Toshiba Corp | 熱処理装置 |
EP1272006A1 (en) * | 2000-04-07 | 2003-01-02 | Ibiden Co., Ltd. | Ceramic heater |
JP2005136370A (ja) | 2003-10-07 | 2005-05-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
TWI281833B (en) * | 2004-10-28 | 2007-05-21 | Kyocera Corp | Heater, wafer heating apparatus and method for manufacturing heater |
KR100949115B1 (ko) * | 2007-12-26 | 2010-03-23 | 삼성전자주식회사 | 히터 플레이트를 구비한 베이크 장치 및 히터 플레이트의제조방법 |
US20100240224A1 (en) * | 2009-03-20 | 2010-09-23 | Taiwan Semiconductor Manufactruing Co., Ltd. | Multi-zone semiconductor furnace |
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- 2017-09-21 WO PCT/JP2017/034052 patent/WO2018100850A1/ja active Application Filing
- 2017-09-21 KR KR1020197015388A patent/KR102384004B1/ko active IP Right Grant
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Patent Citations (6)
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JP2001313155A (ja) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | 円盤状ヒータおよびウエハ処理装置 |
JP2003059837A (ja) * | 2001-08-10 | 2003-02-28 | Tokyo Electron Ltd | 熱処理装置及び熱処理方法 |
JP2004214283A (ja) * | 2002-12-27 | 2004-07-29 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2004327528A (ja) * | 2003-04-22 | 2004-11-18 | Hitachi Kokusai Electric Inc | 半導体処理装置 |
JP2005032883A (ja) * | 2003-07-09 | 2005-02-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2009010195A (ja) * | 2007-06-28 | 2009-01-15 | Tokyo Electron Ltd | 載置台構造及び熱処理装置 |
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WO2018100850A1 (ja) | 2018-06-07 |
KR20190070978A (ko) | 2019-06-21 |
US20190284696A1 (en) | 2019-09-19 |
KR102384004B1 (ko) | 2022-04-06 |
JP6912497B2 (ja) | 2021-08-04 |
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