JPWO2018061617A1 - 高周波電源装置 - Google Patents
高周波電源装置 Download PDFInfo
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- JPWO2018061617A1 JPWO2018061617A1 JP2018542033A JP2018542033A JPWO2018061617A1 JP WO2018061617 A1 JPWO2018061617 A1 JP WO2018061617A1 JP 2018542033 A JP2018542033 A JP 2018542033A JP 2018542033 A JP2018542033 A JP 2018542033A JP WO2018061617 A1 JPWO2018061617 A1 JP WO2018061617A1
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- high frequency
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- 238000001514 detection method Methods 0.000 claims abstract description 23
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 10
- 230000003111 delayed effect Effects 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/80—Generating trains of sinusoidal oscillations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/156—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nonlinear Science (AREA)
- Plasma Technology (AREA)
- Power Conversion In General (AREA)
- Generation Of Surge Voltage And Current (AREA)
Abstract
Description
Claims (4)
- 所定の周波数の高周波信号を出力する発振回路と、
前記回路から出力される高周波信号を、ON状態とOFF状態とを繰り返すパルス状に変調し、パルス状高周波信号として出力する変調回路と、
前記変調回路から出力されるパルス状高周波信号のレベルを調整して出力する可変減衰回路と、
前記変調回路から出力されるパルス状高周波信号の電力を増幅してパルス状高周波電力を出力する増幅回路と、
前記増幅回路から出力されるパルス状高周波電力の出力電力値を検出する出力電力検出部と、
前記出力電力検出部で検出したパルスの先頭部分の最大の出力電力値に対応する第一電圧値が入力され、該入力された第一電圧値と予め出力電力に対応する電圧値として設定された設定電圧値とに基づき、前記可変減衰回路で調整されるパルス状高周波信号のレベルを制御する第一レベル制御信号を出力する第一比較演算回路と、
前記出力電力検出部で検出したパルスの前記先頭部分より後半部分の平均レベルの出力電力値に対応する第二電圧値が入力され、該入力された第二電圧値と前記設定電圧値とに基づき、前記可変減衰回路で調整されるパルス状高周波信号のレベルを制御する第二レベル制御信号を出力する第二比較演算回路と、
切替えタイミング設定値に応じて、前記第一レベル制御信号と前記第二レベル制御信号の値を切替る切替え回路と、
前記第一レベル制御信号または前記第二レベル制御信号が更新された際の遷移時間を所望の時定数に設定する時定数回路と、を備える 高周波電源装置。 - 請求項1において、
前記第一比較演算回路は、下限値より演算結果が小さくならないように制限を設けている 高周波電源装置。 - 請求項2において、
前記一比較演算回路は、前記第一電圧値が前記設定電圧値よりも大きい場合は、前記第一レベル制御信号を小さくし、前記第一電圧値が前記設定電圧値よりも小さい場合は、前記第一レベル制御信号を大きくする 高周波電源装置。 - 請求項2において、
前記二比較演算回路は、前記第二電圧値が前記設定電圧値よりも大きい場合は、前記第二レベル制御信号を小さくし、前記第二電圧値が前記設定電圧値よりも小さい場合は、前記第二レベル制御信号を大きくする 高周波電源装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016189689 | 2016-09-28 | ||
JP2016189689 | 2016-09-28 | ||
PCT/JP2017/031597 WO2018061617A1 (ja) | 2016-09-28 | 2017-09-01 | 高周波電源装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018061617A1 true JPWO2018061617A1 (ja) | 2019-06-24 |
JP6780007B2 JP6780007B2 (ja) | 2020-11-04 |
Family
ID=61762742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018542033A Active JP6780007B2 (ja) | 2016-09-28 | 2017-09-01 | 高周波電源装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10491202B2 (ja) |
JP (1) | JP6780007B2 (ja) |
KR (1) | KR102088602B1 (ja) |
WO (1) | WO2018061617A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6842443B2 (ja) * | 2018-06-22 | 2021-03-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマを生成する方法 |
CN115668789A (zh) * | 2020-07-30 | 2023-01-31 | 日清纺微电子有限公司 | 传感器接口电路以及传感器模块 |
US11706723B2 (en) | 2021-06-09 | 2023-07-18 | XP Power Limited | Radio frequency generator with automatic level control |
JP7418389B2 (ja) * | 2021-12-28 | 2024-01-19 | 株式会社京三製作所 | 高周波電源 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007080696A1 (ja) * | 2006-01-16 | 2007-07-19 | Advanced Design Corp. | 高周波電源装置 |
JP2011217482A (ja) * | 2010-03-31 | 2011-10-27 | Daihen Corp | 高周波電源装置 |
JP2014175218A (ja) * | 2013-03-11 | 2014-09-22 | Hitachi Kokusai Electric Inc | プラズマ生成用電源装置 |
WO2015029937A1 (ja) * | 2013-08-26 | 2015-03-05 | 株式会社日立国際電気 | プラズマ生成用電源装置 |
WO2015056509A1 (ja) * | 2013-10-17 | 2015-04-23 | 株式会社日立国際電気 | プラズマ生成用電源装置の制御方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US8192576B2 (en) | 2006-09-20 | 2012-06-05 | Lam Research Corporation | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
KR101322539B1 (ko) * | 2009-08-07 | 2013-10-28 | 가부시끼가이샤교산세이사꾸쇼 | 펄스 변조 고주파 전력 제어 방법 및 펄스 변조 고주파 전원 장치 |
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2017
- 2017-09-01 KR KR1020197002871A patent/KR102088602B1/ko active IP Right Grant
- 2017-09-01 US US16/331,383 patent/US10491202B2/en active Active
- 2017-09-01 WO PCT/JP2017/031597 patent/WO2018061617A1/ja active Application Filing
- 2017-09-01 JP JP2018542033A patent/JP6780007B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007080696A1 (ja) * | 2006-01-16 | 2007-07-19 | Advanced Design Corp. | 高周波電源装置 |
JP2011217482A (ja) * | 2010-03-31 | 2011-10-27 | Daihen Corp | 高周波電源装置 |
JP2014175218A (ja) * | 2013-03-11 | 2014-09-22 | Hitachi Kokusai Electric Inc | プラズマ生成用電源装置 |
WO2015029937A1 (ja) * | 2013-08-26 | 2015-03-05 | 株式会社日立国際電気 | プラズマ生成用電源装置 |
WO2015056509A1 (ja) * | 2013-10-17 | 2015-04-23 | 株式会社日立国際電気 | プラズマ生成用電源装置の制御方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20190025653A (ko) | 2019-03-11 |
JP6780007B2 (ja) | 2020-11-04 |
US10491202B2 (en) | 2019-11-26 |
WO2018061617A1 (ja) | 2018-04-05 |
KR102088602B1 (ko) | 2020-03-12 |
US20190267978A1 (en) | 2019-08-29 |
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