JPWO2018052045A1 - 基板接着方法及び積層体の製造方法 - Google Patents
基板接着方法及び積層体の製造方法 Download PDFInfo
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Abstract
Description
上記圧着後の上記支持フィルムを剥離する支持フィルム剥離工程、並びに、
上記ホトレジストパターンの上記第1の基板と反対側の面上に第2の基板を接し、上記第1の基板、上記ホトレジストパターン及び上記第2の基板を圧着する第2圧着工程
を含む、基板接着方法である。
本発明の第一の態様の基板接着方法は、上述のように、第1圧着工程、支持フィルム剥離工程、及び、第2圧着工程を含む。
以下に、図1及び図2を適宜参照しながら詳細に説明する。尚、各図に示す本発明の実施態様はあくまでも一実施態様にすぎず、これらに限定されない。
本実施態様の基板接着方法における第1圧着工程は、支持フィルム上に形成されたホトレジストパターンの上記支持フィルムと反対側の面上に第1の基板を接し、上記支持フィルム、上記ホトレジストパターン及び上記第1の基板を圧着することを含む。
本実施態様の基板接着方法における支持フィルム剥離工程は、上記圧着後の支持フィルムを剥離することを含む。
本実施態様の基板接着方法における第2圧着工程は、ホトレジストパターンの第1の基板と反対側の面上に第2の基板を接し、上記第1の基板、上記ホトレジストパターン及び上記第2の基板を圧着することを含む。
本発明の第一の態様である基板接着方法を用いる、第1の基板、ホトレジストパターン及び第2の基板をこの順に積層してなる積層体を製造する方法もまた、本発明の一つである。かかる本発明の第二の態様である積層体の製造方法においても、第1の基板、ホトレジストパターン及び第2の基板については、本発明の第一の態様である基板接着方法において上述したとおりである。
これにより、本実施態様においては、第1の基板及び第2の基板として、上述の第1圧着工程及び第2圧着工程における圧着に供することができる程度の強度があれば、また、該圧着として熱圧着を行う場合は該熱圧着に供することができる程度の強度及び耐熱性があれば、何れも特に限定されることなく、種々の基板を用いることができる。
本発明により得られる第1の基板、ホトレジストパターン及び第2の基板をこの順に積層してなる積層体は、ホトレジストパターンが2枚の基板に挟まれて形成する精密微細空間を含む構造体である。かかる積層体は、特に限定されないが、例えば、精密微細空間を提供する部材として、主に電子部品内に形成されたもの、例えば、半導体ウェーハと透明基板との間のスペーサ、微細な構造を有する精密微細空間の形成等に好ましく用いることができ、例えば、SAWフィルター、インクジェットヘッド、レジスト液滴吐出ヘッド、DNA液滴吐出ヘッド等の液体吐出ヘッド等に用いることができる他、例えば、マイクロ光アレイ、マイクロスイッチ、マイクロリレー、光スイッチ、圧力センサ等に使用することができる。
2 感光性樹脂組成物層
2R 感光性樹脂組成物層におけるレジスト部ないしホトレジストパターン
3 支持フィルム
4 第1の基板
5 第2の基板
101 マスク
Claims (9)
- 支持フィルム上に形成されたホトレジストパターンの前記支持フィルムと反対側の面上に第1の基板を接し、前記支持フィルム、前記ホトレジストパターン及び前記第1の基板を圧着する第1圧着工程、
前記圧着後の前記支持フィルムを剥離する支持フィルム剥離工程、並びに、
前記ホトレジストパターンの前記第1の基板と反対側の面上に第2の基板を接し、前記第1の基板、前記ホトレジストパターン及び前記第2の基板を圧着する第2圧着工程
を含む、基板接着方法。 - 前記ホトレジストパターンは、前記支持フィルム上に積層した感光性樹脂組成物層に対して、位置選択的に露光した後、現像することを含む工程により形成され、
前記支持フィルムがPETフィルムである、請求項1記載の基板接着方法。 - 前記第1の基板は、前記ホトレジストパターンと接する面に、前記圧着、前記露光及び前記現像からなる群より選択される少なくとも1つの工程、並びに/又は、前記感光性樹脂組成物により変化を生じる部位を有する、請求項1又は2記載の基板接着方法。
- 前記第1の基板は、前記ホトレジストパターンと接する面の少なくとも一部に構造物を有する、請求項1〜3の何れか1項記載の基板接着方法。
- 前記構造物は、配線、回路、及び電極からなる群より選択される少なくとも1つである、請求項4記載の基板接着方法。
- 前記第1圧着工程における前記圧着は0.001〜1000MPaの条件下に行う、請求項1〜5の何れか1項記載の基板接着方法。
- 前記第1圧着工程における前記圧着は、100℃以上の条件下に行う、請求項1〜6の何れか1項記載の基板接着方法。
- 前記第2圧着工程における前記圧着は、100〜300℃及び0.001〜1000MPaの条件下に行う、請求項1〜7の何れか1項記載の基板接着方法。
- 請求項1〜8の何れか1項記載の基板接着方法を用いる、第1の基板、ホトレジストパターン及び第2の基板をこの順に積層してなる積層体の製造方法。
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