JPWO2017155032A1 - 窒化ガリウム構造体、圧電素子、圧電素子の製造方法、及び圧電素子を用いた共振子 - Google Patents
窒化ガリウム構造体、圧電素子、圧電素子の製造方法、及び圧電素子を用いた共振子 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 28
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 description 50
- 239000010408 film Substances 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 17
- 238000002441 X-ray diffraction Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H10N30/877—Conductive materials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
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Abstract
Description
(1.共振子の構成)
以下、添付の図面を参照して本発明の第1実施形態について説明する。図1は、本発明の第1実施形態に係る窒化ガリウム構造体の一例である圧電素子を用いて形成した共振子10の一例を概略的に示す平面図である。共振子10は、MEMS技術を用いて製造されるMEMS振動子であり、図1の直交座標系におけるXY平面内で面内振動する。なお、本発明に係る圧電素子が用いられるのは図1に示される厚み広がり振動モードを用いた共振子に限定されず、厚み縦振動モード、ラム波振動モード、屈曲振動モード、表面波振動モードに用いられても良い。これらはタイミングデバイス、RFフィルタ、デュプレクサ、超音波トランスデューサーに応用される。さらに、アクチュエーター機能を持った圧電ミラーや圧電ジャイロ、圧力センサー機能を持った圧電マイクロフォンや超音波振動センサー等に用いられても良い。
次に、図2を用いて本実施形態に係る振動部120の積層構造について説明する。図2は、図1のAA´断面図である。
次に、本実施形態に係る、振動部120のうち、下部電極E1及び圧電薄膜F2の成膜方法について説明する。
本実施形態では、下部電極E1及び圧電薄膜F2は、スパッタ法によって成膜される。まず、基板F1上に以下の条件でスパッタリングを行い、下部電極E1を成膜する。
・ターゲット Hfの単体金属
・圧力 0.25Pa
・温度 400℃
・出力 180W
・時間 0.25時間
・ターゲット GaN焼結
・圧力 0.25Pa
・温度 500℃
・窒素濃度 50%(Ar:N2=1:1)
・出力 100W
・時間 3時間
圧電薄膜F2上に上部電極E2を形成した後、上部電極E2をエッチング等によって所望の形状に加工する。
図3を参照し、本実施形態に係る下部電極E1上に形成した圧電薄膜F2の配向性と、比較例の下部電極上に形成したGaN膜の配向性とを、X線回折によって検証した結果を説明する。比較例の下部電極は、Ti(チタン)、TiN(窒化チタン)、HfN(窒化ハフニウム)をそれぞれ用いて形成したものである。図3A〜3Dにおいて、横軸は反射面に対する入射波の角度を示し、縦軸は反射波の強度を示している。
第2の実施形態以降では第1の実施形態と共通の事柄についての記述を省略し、異なる点についてのみ説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。
120 振動部
F1 基板
F2 圧電薄膜
E1 下部電極
E11 第1層
E12 中間層
E13 第2層
E2 上部電極
Claims (6)
- 基板と、
前記基板と対向して設けられ、窒化ガリウムを主成分とする窒化ガリウム層と、
前記窒化ガリウム層と前記基板との間に設けられ、ハフニウムを主成分とする少なくとも1層以上のハフニウム層を含み、前記少なくとも1層以上のハフニウム層において前記窒化ガリウム層と接触する第1電極と、
を備える窒化ガリウム構造体。 - 請求項1に記載の窒化ガリウム構造体を備える圧電素子。
- 前記少なくとも1層以上のハフニウム層は、
前記基板と接触する第1ハフニウム層と、前記窒化ガリウム層と接触する第2ハフニウム層と、を含み、
前記第1電極は、
前記第1ハフニウム層と前記第2ハフニウム層との間に形成された、アルミニウムを主成分とするアルミニウム層をさらに有する、請求項2に記載の圧電素子。 - 前記窒化ガリウム層を挟んで前記第1電極と対向して設けられた第2電極をさらに備える、請求項2または3に記載の圧電素子。
- 請求項2〜4いずれか一項記載の圧電素子を備える共振子。
- 基板の上に、ハフニウムを主成分とするハフニウム層を含む電極をスパッタリングによって形成する工程と、
前記電極の上に窒化ガリウムを主成分とする圧電体層をスパッタリングによって形成する工程と、
を含む圧電素子製造方法。
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PCT/JP2017/009459 WO2017155032A1 (ja) | 2016-03-11 | 2017-03-09 | 窒化ガリウム構造体、圧電素子、圧電素子の製造方法、及び圧電素子を用いた共振子 |
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JP2004269313A (ja) * | 2003-03-07 | 2004-09-30 | Hitachi Cable Ltd | 窒化ガリウム結晶基板の製造方法 |
JP2005136115A (ja) * | 2003-10-30 | 2005-05-26 | Tdk Corp | 電子デバイス及びその製造方法 |
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JP5073772B2 (ja) * | 2009-09-16 | 2012-11-14 | 日本電波工業株式会社 | 圧電デバイス |
KR101712094B1 (ko) * | 2009-11-27 | 2017-03-03 | 포항공과대학교 산학협력단 | 질화물갈륨계 수직 발광다이오드 및 그 제조 방법 |
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US9929279B2 (en) * | 2014-02-05 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10340885B2 (en) * | 2014-05-08 | 2019-07-02 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes |
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JP2004269313A (ja) * | 2003-03-07 | 2004-09-30 | Hitachi Cable Ltd | 窒化ガリウム結晶基板の製造方法 |
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