JPWO2017150212A1 - 酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料 - Google Patents

酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料 Download PDF

Info

Publication number
JPWO2017150212A1
JPWO2017150212A1 JP2018503028A JP2018503028A JPWO2017150212A1 JP WO2017150212 A1 JPWO2017150212 A1 JP WO2017150212A1 JP 2018503028 A JP2018503028 A JP 2018503028A JP 2018503028 A JP2018503028 A JP 2018503028A JP WO2017150212 A1 JPWO2017150212 A1 JP WO2017150212A1
Authority
JP
Japan
Prior art keywords
aluminum oxide
oxide film
aluminum
compound
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2018503028A
Other languages
English (en)
Japanese (ja)
Inventor
白井　昌志
昌志 白井
央 二瓶
央 二瓶
貴匡 宮崎
貴匡 宮崎
純一 向
純一 向
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Publication of JPWO2017150212A1 publication Critical patent/JPWO2017150212A1/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
JP2018503028A 2016-03-01 2017-02-17 酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料 Withdrawn JPWO2017150212A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016038497 2016-03-01
JP2016038497 2016-03-01
PCT/JP2017/005852 WO2017150212A1 (fr) 2016-03-01 2017-02-17 Procédé de production de film d'oxyde d'aluminium et matériau de départ de production pour film d'oxyde d'aluminium

Publications (1)

Publication Number Publication Date
JPWO2017150212A1 true JPWO2017150212A1 (ja) 2019-01-31

Family

ID=59743902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018503028A Withdrawn JPWO2017150212A1 (ja) 2016-03-01 2017-02-17 酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料

Country Status (3)

Country Link
JP (1) JPWO2017150212A1 (fr)
TW (1) TW201800605A (fr)
WO (1) WO2017150212A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001245388A1 (en) * 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US6759081B2 (en) * 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
JP4410497B2 (ja) * 2003-06-17 2010-02-03 東京エレクトロン株式会社 成膜方法
JP5825683B2 (ja) * 2012-07-20 2015-12-02 日本電信電話株式会社 半導体装置の製造方法
JP2015012179A (ja) * 2013-06-28 2015-01-19 住友電気工業株式会社 気相成長方法

Also Published As

Publication number Publication date
TW201800605A (zh) 2018-01-01
WO2017150212A1 (fr) 2017-09-08

Similar Documents

Publication Publication Date Title
WO2012060428A1 (fr) Composé de métal (alcane aminé amide), procédé de fabrication d'un film mince contenant du métal utilisant ledit composé
WO2013065806A1 (fr) Composé de type tris(dialkylamide)aluminium et procédé de production d'un film mince contenant de l'aluminium l'utilisant
KR20070010022A (ko) 저농도 지르코늄의 하프늄 할라이드 조성물
JP2020502044A (ja) シクロペンタジエニル配位子を含む金属錯体
JP2015224227A (ja) （アセチレン）ジコバルトヘキサカルボニル化合物の製造方法
JP5611736B2 (ja) 有機金属化合物
KR101965219B1 (ko) 알루미늄 화합물 및 이를 이용한 알루미늄-함유 막의 형성 방법
US9556212B2 (en) Chemical deposition raw material formed of ruthenium complex and method for producing the same, and chemical deposition method
KR101476016B1 (ko) 금속 알콕사이드 화합물 및 당해 화합물을 사용한 금속 함유 박막의 제조법
JP5042548B2 (ja) 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法
WO2017030150A1 (fr) Procédé de fabrication d'un film d'oxyde d'aluminium, matériau pour la fabrication de film d'oxyde d'aluminium et composé d'aluminium
JPWO2017150212A1 (ja) 酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料
JP6565448B2 (ja) 酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料
JP5842687B2 (ja) コバルト膜形成用原料及び当該原料を用いたコバルト含有薄膜の製造方法
JP5825169B2 (ja) コバルト含有薄膜の製造方法
JP2013173716A (ja) コバルト化合物の混合物、及び当該コバルト化合物の混合物を用いたコバルト含有薄膜の製造方法
JP2018027921A (ja) アミジナート配位子を有するジアルキルアルミニウム化合物の製造方法
CN115279940B (zh) 铝前体化合物、其制备方法和使用其形成含铝膜的方法
JP5817727B2 (ja) マグネシウムビス（ジアルキルアミド）化合物、及び当該マグネシウム化合物を用いるマグネシウム含有薄膜の製造方法
JP2016108247A (ja) ビス（シリルアミドアミノアルカン）マンガン化合物及び当該マンガン化合物を用いたマンガン含有膜の製造方法
JP2016222568A (ja) ビス（シリルアミドアミノアルカン）鉄化合物及び当該鉄化合物を用いた鉄含有膜の製造方法
JP2016138325A (ja) 金属又は半金属炭窒化膜の製造方法
JP2007070236A (ja) ビス（エチルシクロペンタジエニル）トリヒドロタンタルおよびその製造方法ならびにそれを用いた炭化タンタル膜または炭窒化タンタル膜の形成方法
JP2009137862A (ja) 有機ルテニウム錯体混合物及び当該錯体混合物を用いた金属ルテニウム含有薄膜の製造法
JP2017110268A (ja) 酸化アルミニウム膜の製造原料及び酸化アルミニウム膜の製造方法

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under section 19 (pct)

Free format text: JAPANESE INTERMEDIATE CODE: A527

Effective date: 20180822

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191218

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20200421