JPWO2017085788A1 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 167
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 134
- 239000002184 metal Substances 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
102.素子分離絶縁膜
103.平面状半導体層
104.第1の金属
105.レジスト
106.第1の絶縁膜
107.ゲート、ゲート材
108.第2の絶縁膜
109.第2の金属
110.第3の絶縁膜
111.レジスト
112.第1の孔
113.ゲート絶縁膜
114.柱状半導体層
115.レジスト
116.層間絶縁膜
117.金属
118.レジスト
Claims (9)
- 基板上に形成された平面状半導体層と、
前記平面状半導体層上に形成された柱状半導体層と、
前記柱状半導体層を取り囲むゲート絶縁膜と、
前記ゲート絶縁膜を取り巻く第1の金属と、
前記第1の金属は前記平面状半導体層上部に接するのであって、
前記第1の金属より上の位置に形成され前記ゲート絶縁膜を取り巻くゲートと、
前記ゲートは前記第1の金属と電気的に絶縁するのであって、
前記ゲートより上の位置に形成され前記ゲート絶縁膜を取り巻く第2の金属と、を有し、
前記第2の金属は前記ゲートと電気的に絶縁するのであって、
前記第2の金属の上部は前記柱状半導体層上部と電気的に接続することを特徴とする半導体装置。 - 前記第1の金属は第1の仕事関数を有し、前記第1の金属と前記柱状半導体層下部との間で第1の仕事関数差を有することを特徴とする請求項1に記載の半導体装置。
- 前記第2の金属は第1の仕事関数を有し、前記第2の金属と前記柱状半導体層上部との間で第1の仕事関数差を有することを特徴とする請求項1に記載の半導体装置。
- 前記第1の仕事関数は、4.0eVから4.2eVの間であることを特徴とする請求項2、3に記載の半導体装置。
- 前記第1の仕事関数は、5.0eVから5.2eVの間であることを特徴とする請求項2、3に記載の半導体装置。
- 前記平面状半導体層を取り巻く素子分離絶縁膜を有し、
前記第1の金属は前記素子分離絶縁膜上に延在することを特徴とする請求項1に記載の半導体装置。 - 前記平面状半導体層上部に拡散層を有することを特徴とする請求項1に記載の半導体装置。
- 前記柱状半導体層上部に拡散層を有することを特徴とする請求項1に記載の半導体装置。
- 基板上に形成された平面状半導体層上に第1の金属を形成し、
前記第1の金属上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に金属からなるゲート材を形成し、
前記ゲート材上に第2の絶縁膜を形成し、
前記第2の絶縁膜上に第2の金属を形成し、
前記第2の金属上に第3の絶縁膜を形成し、
前記第3の絶縁膜と前記第2の金属と前記第2の絶縁膜と前記金属からなるゲート材と前記第1の絶縁膜と前記第1の金属に柱状半導体層を形成するための第1の孔を形成し、
前記第1の孔の側面にゲート絶縁膜を形成し、
前記第1の孔に前記平面状半導体層から半導体層をエピタキシャル成長させることにより柱状半導体層を形成することを特徴とする半導体装置の製造方法。
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PCT/JP2015/082254 WO2017085788A1 (ja) | 2015-11-17 | 2015-11-17 | 半導体装置及び半導体装置の製造方法 |
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JPWO2017085788A1 true JPWO2017085788A1 (ja) | 2017-11-16 |
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US (1) | US10396197B2 (ja) |
JP (1) | JP6267369B2 (ja) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10269915B2 (en) * | 2017-04-24 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical MOS transistor and fabricating method thereof |
Citations (6)
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US20080251825A1 (en) * | 2007-04-10 | 2008-10-16 | Kyungpook National University Industry-Academic Cooperation Foundation | Pillar-type field effect transistor having low leakage current |
JP2009182318A (ja) * | 2008-01-29 | 2009-08-13 | Unisantis Electronics Japan Ltd | 半導体装置およびその製造方法 |
WO2013175557A1 (ja) * | 2012-05-21 | 2013-11-28 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
US20140209998A1 (en) * | 2013-01-25 | 2014-07-31 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
WO2014115305A1 (ja) * | 2013-01-25 | 2014-07-31 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
US20150236086A1 (en) * | 2014-02-19 | 2015-08-20 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor structures and methods for multi-level work function |
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JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Mos型半導体装置 |
JP2950558B2 (ja) | 1989-11-01 | 1999-09-20 | 株式会社東芝 | 半導体装置 |
KR100406578B1 (ko) * | 2001-12-29 | 2003-11-20 | 동부전자 주식회사 | 반도체 소자의 제조방법 |
US8598650B2 (en) | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
JP6014726B2 (ja) | 2008-02-15 | 2016-10-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置及びその製造方法 |
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JP2013021274A (ja) * | 2011-07-14 | 2013-01-31 | Toshiba Corp | 半導体装置 |
JP5670606B1 (ja) * | 2013-11-22 | 2015-02-18 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置、及び半導体装置の製造方法 |
JP5954597B2 (ja) | 2014-09-22 | 2016-07-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
JP5833214B2 (ja) | 2014-11-19 | 2015-12-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置の製造方法、及び、半導体装置 |
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WO2017061050A1 (ja) * | 2015-10-09 | 2017-04-13 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
JP6200103B2 (ja) * | 2015-10-15 | 2017-09-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
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- 2015-11-17 JP JP2016572338A patent/JP6267369B2/ja active Active
- 2015-11-17 WO PCT/JP2015/082254 patent/WO2017085788A1/ja active Application Filing
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Patent Citations (6)
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US20080251825A1 (en) * | 2007-04-10 | 2008-10-16 | Kyungpook National University Industry-Academic Cooperation Foundation | Pillar-type field effect transistor having low leakage current |
JP2009182318A (ja) * | 2008-01-29 | 2009-08-13 | Unisantis Electronics Japan Ltd | 半導体装置およびその製造方法 |
WO2013175557A1 (ja) * | 2012-05-21 | 2013-11-28 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
US20140209998A1 (en) * | 2013-01-25 | 2014-07-31 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
WO2014115305A1 (ja) * | 2013-01-25 | 2014-07-31 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
US20150236086A1 (en) * | 2014-02-19 | 2015-08-20 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor structures and methods for multi-level work function |
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Publication number | Priority date | Publication date | Assignee | Title |
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US10269915B2 (en) * | 2017-04-24 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical MOS transistor and fabricating method thereof |
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JP6267369B2 (ja) | 2018-01-24 |
WO2017085788A1 (ja) | 2017-05-26 |
US20180122940A1 (en) | 2018-05-03 |
US10396197B2 (en) | 2019-08-27 |
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