JPWO2017061059A1 - 表面被覆切削工具およびその製造方法 - Google Patents
表面被覆切削工具およびその製造方法 Download PDFInfo
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- JPWO2017061059A1 JPWO2017061059A1 JP2015563003A JP2015563003A JPWO2017061059A1 JP WO2017061059 A1 JPWO2017061059 A1 JP WO2017061059A1 JP 2015563003 A JP2015563003 A JP 2015563003A JP 2015563003 A JP2015563003 A JP 2015563003A JP WO2017061059 A1 JPWO2017061059 A1 JP WO2017061059A1
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- 238000005520 cutting process Methods 0.000 title claims abstract description 154
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 40
- 238000000576 coating method Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 61
- 238000004381 surface treatment Methods 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 106
- 238000005259 measurement Methods 0.000 description 66
- 239000000463 material Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910010037 TiAlN Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 239000011195 cermet Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010060 TiBN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 239000010730 cutting oil Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005480 shot peening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/28—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass cutting tools
- B23P15/30—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass cutting tools lathes or like tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
最初に本発明の実施態様を列記して説明する。
[本発明の実施形態の詳細]
以下、本発明の実施形態(以下「本実施形態」とも記す)についてさらに詳細に説明する。
本実施形態の表面被覆切削工具は、すくい面と、逃げ面と、このすくい面および逃げ面の境界をなす刃先稜線とを有している。
基材は、この種の基材として従来公知のものであればいずれも使用することができる。たとえば、超硬合金(たとえば、WC基超硬合金、WCのほか、Coを含み、あるいはTi、Ta、Nbなどの炭窒化物を添加したものも含む)、サーメット(TiC、TiN、TiCNなどを主成分とするもの)、高速度鋼、セラミックス(炭化チタン、炭化ケイ素、窒化ケイ素、窒化アルミニウム、酸化アルミニウムなど)、立方晶型窒化ホウ素焼結体、またはダイヤモンド焼結体のいずれかであることが好ましい。
被膜は、複数のα−Al2O3の結晶粒を含むα−Al2O3層を含んでいる。たとえば被膜は、α−Al2O3層を1層以上含み、さらに他の層を含んだ複数の層から構成することができる。
α−Al2O3層は、α−Al2O3の結晶粒を主成分とする。「α−Al2O3の結晶粒を主成分とする」とは、α−Al2O3層を構成するAl2O3の結晶粒のうち、α−Al2O3の結晶粒が90質量%以上を占めることを意味する。また、好ましくは不可避的にβ−Al2O3、γ−Al2O3およびκ−Al2O3の少なくとも1つ以上の結晶粒が混入する場合を除き、α−Al2O3の結晶粒からα−Al2O3層が構成されることを意味する。
α−Al2O3層は、刃先稜線と、すくい面上のA領域と、逃げ面上のB領域とからなる第1領域を含む。さらに、すくい面においてA領域を除いた領域であって、かつ被膜に被覆されている領域である第2領域を含む。また、逃げ面においてB領域を除いた領域である第3領域も含む。ここで、A領域はすくい面において、刃先稜線に沿って刃先稜線から1mm離れた地点を通る仮想線と刃先稜線とで挟まれる領域である。B領域は逃げ面において、刃先稜線に沿って刃先稜線から1mm離れた地点を通る仮想線と刃先稜線とで挟まれる領域である。また、第1領域には、刃先稜線の交点(以下、「コーナー」と記す)、上記仮想線の交点、および刃先稜線と仮想線とが交わる交点が含まれる。第2領域および第3領域に刃先稜線は含まれない。
α−Al2O3層は、配向性指数TC(hkl)においてTC(006)の第1領域における平均値がaであり、TC(006)の第2領域における平均値がbであるとき、b−a>0.5の関係を満たす。これにより、配向性の高い単一性を保って熱伝導率を高く維持しながら、刃先部分のみ配向性を比較的低く制御することで刃先の突発的なチッピングを抑制することができる。
また、第2領域はすくい面に形成されるが、該すくい面の表面に凹凸が存在して配向性指数TC(hkl)を測定することが困難であるケースがあり得る。この場合であっても、本実施形態のα−Al2O3層は、TC(006)の第3領域における平均値をbとしたとき、TC(006)の第1領域における平均値であるaに対して、b−a>0.5の関係を満たす。これにより、配向性の高い単一性を保って熱伝導率を高く維持しながら、刃先部分のみ配向性を比較的低く制御することで刃先の突発的なチッピングを抑制することができる。
管電圧: 45kV
管電流: 200mA
X線回折法: θ−2θ法
X線照射範囲: ピンホールコリメーターを使用し、直径0.3mm程度の範囲にX線を照射。
α−Al2O3層は、配向性指数TC(hkl)においてTC(104)の第1領域における平均値がcであるとき、上記aとの関係において0.05<c/a<1の関係を満たすことが好ましい。
被膜は上述のとおり、α−Al2O3層以外に他の層を含むことができる。他の層として、TiCNO層、TiBN層、TiC層、TiN層、TiAlN層、TiSiN層、AlCrN層、TiAlSiN層、TiAlNO層、AlCrSiCN層、TiCN層、TiSiC層、CrSiN層、AlTiSiCO層、TiSiCN層などを例示することができる。ここで本明細書において上記のように化合物を化学式で表わすとき、原子比を特に限定しない場合は従来公知のあらゆる原子比を含み、必ずしも化学量論的範囲のものに限定されない。
本実施形態の表面被覆切削工具の製造方法は、基材上に被膜を形成する工程を含む。本実施形態では、基材上に被膜を、化学気相蒸着(CVD)法により形成することによって好適に製造することができる。CVD法を用いると、成膜温度が800〜1200℃となり、これは物理蒸着法と比較して高く、これにより基材との密着性が向上する。被膜のうち、α−Al2O3層以外の他の層が形成される場合、それらの層は従来公知の条件で形成することができる。
6.5質量%のCoと、1.2質量%のTaCと、0.8質量%のTiCと、1.3質量%のNbCと、残部のWCとからなる組成比で配合した原料粉末をアトライタ(湿式メディア攪拌型微粉砕機、商品名(型番):「湿式アトライタ100S」、日本コークス工業株式会社製)で8時間湿式混合した後、乾燥させた。その後100MPaの圧力で圧粉体にプレス成形し、この圧粉体を真空容器に入れて2Paの真空中で1400℃、1時間保持した。
上記で得られた各基材に対し、その表面に被膜を形成した。具体的には、基材をCVD装置内にセットすることにより、CVD法により基材上に被膜を形成した。被膜の形成条件は、以下の表1、表2および表3に記載したとおりである。表1に、α−Al2O3層およびこのα−Al2O3層以外の各層を作製するための形成条件(温度条件、圧力条件および層厚)を示し、表2にα−Al2O3層以外の各層を作製するための原料ガスの組成比を示した。表3に、α−Al2O3層を作製するための原料ガスの組成比を示した。表1および表3に示すように、α−Al2O3層の形成条件はX、Y、Zの3とおりのガス条件があり、これらのガス条件を適用した基材を、それぞれ試料1、試料2、試料3と名付けた。
各試料のそれぞれ1個について、その刃先稜線に対して表面処理を行なった。具体的には、表面被覆切削工具を60rpmの速度ですくい面の貫通孔を軸中心として回転させながら、粒径70μmのセラミック砥粒を45°の角度に配置したノズルの先端から与え、ウエットブラスト処理を施した。このときのセラミック砥粒の投射圧は0.05MPa、投射距離は5mm、投射時間は5〜10秒、濃度は5体積%(残部は水を主成分とする溶媒)とした。特に、刃先稜線とノズル先端との間の距離が常に5mmとなるように、表面被覆切削工具の回転とノズルの動きとを同期させた。以下、各試料について表面処理を施した各1個を、試料1A、試料2A、試料3Aと称する。このようにして、以下の表4に示す試料1〜試料3および試料1A〜試料3Aからなる表面被覆切削工具を作製した。
各試料に対し、X線回折装置(商品名:「SmartLab(登録商標)3」、株式会社リガク製)を使用し、Cu−KαX線を用いたθ−2θ法によってXRDデータを得た。管電圧は45kV、管電流は200mAとし、X線照射範囲はピンホールコリメーターを使用し、すくい面上の直径0.3mmの範囲にX線を照射した。
また各試料に対し、以下の条件により切削試験を行なった。
切削速度: 500m/min
送り: 0.2mm/rev
切込み: 1.5mm
切削油: 湿式(水溶性油)
評価: 欠損するまでの時間(分)を寿命として測定。
表4に示すように、試料1および試料2は、TC(006)の値からα−Al2O3層が(006)配向していることが理解されるものの、切削試験から短寿命となることが分かった。切削試験を観察したところ、短時間で刃先のチッピングが発生し、これを起点に損傷が広がった。また、試料3および試料3Aは、TC(006)の値からα−Al2O3層が(006)配向していないことが理解される。切削試験を観察したところ、熱伝導性が低いために刃先温度が上昇し、塑性変形が起こり短寿命となった。
Claims (5)
- すくい面と、逃げ面と、該すくい面および該逃げ面の境界をなす刃先稜線とを有する表面被覆切削工具であって、
基材と該基材上に形成された被膜とを備え、
前記被膜は、複数のα−Al2O3の結晶粒を含むα−Al2O3層を含み、
前記α−Al2O3層は、前記刃先稜線と前記すくい面上のA領域と前記逃げ面上のB領域とからなる第1領域と、前記すくい面において前記A領域を除いた領域であって、かつ前記被膜に被覆されている領域である第2領域と、前記逃げ面において前記B領域を除いた領域である第3領域と、を含み、
前記A領域は、前記すくい面において前記刃先稜線に沿って前記刃先稜線から1mm離れた地点を通る仮想線と前記刃先稜線とで挟まれる領域であり、
前記B領域は、前記逃げ面において前記刃先稜線に沿って前記刃先稜線から1mm離れた地点を通る仮想線と前記刃先稜線とで挟まれる領域であり、
配向性指数TC(hkl)においてTC(006)の前記第1領域における平均値がaであり、前記TC(006)の前記第2領域または前記第3領域における平均値がbであるとき、b−a>0.5の関係を満たす、表面被覆切削工具。 - 前記aは、0.01<a<7の関係を満たし、前記bは、7<b<8の関係を満たす、請求項1に記載の表面被覆切削工具。
- 前記α−Al2O3層は、前記配向性指数TC(hkl)においてTC(104)の前記第1領域における平均値がcであるとき、前記aとの関係において0.05<c/a<1の関係を満たす、請求項1または請求項2に記載の表面被覆切削工具。
- 請求項1〜請求項3のいずれか1項に記載の表面被覆切削工具の製造方法であって、
前記基材上に前記被膜を形成する工程と、
前記被膜において前記第1領域に対応する部分に表面処理を行なう工程と、を含む、表面被覆切削工具の製造方法。 - 前記表面処理は、ブラシ処理またはブラスト処理を少なくとも含む、請求項4に記載の表面被覆切削工具の製造方法。
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