JPWO2017022284A1 - 絶縁型dc−dcコンバータ - Google Patents
絶縁型dc−dcコンバータ Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33573—Full-bridge at primary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
この発明に係る絶縁型DC−DCコンバータの第1の実施形態である絶縁型DC−DCコンバータ100について、図1および図2を用いて説明する。
図1(A)は、絶縁型DC−DCコンバータ100の上面図である。図1(B)は、絶縁型DC−DCコンバータ100を、図1(A)に示したA1−A1線を含む面(一点鎖線により図示)で切り欠いた矢視断面図である。なお、図1(B)では、断面が現れている要素のみを図示しており、断面が現れていない要素の図示は省略している。また、図2に示した回路図200は、図1に示した絶縁型DC−DCコンバータ100の回路図の一例であり、フォワード型の絶縁型DC−DCコンバータの回路構成を表している。
この発明に係る絶縁型DC−DCコンバータの第2の実施形態である絶縁型DC−DCコンバータ300について、図3を用いて説明する。絶縁型DC−DCコンバータ300は、図1に示した絶縁型DC−DCコンバータ100と基本的に同様の構造を有しているが、チョークコイル14の下方の空間内に配置される電子部品が異なっている。それ以外の絶縁型DC−DCコンバータ100と共通する箇所の説明については省略する。
この発明に係る絶縁型DC−DCコンバータの第3の実施形態である絶縁型DC−DCコンバータ400について、図4および図5を用いて説明する。
Claims (5)
- 一方主面および他方主面を有する基板と、
一次側巻線と二次側巻線とを含んでなるトランスと、
前記トランスの一次側巻線と共に一次側回路を構成する、一次側電子部品および一次側配線と、
前記トランスの二次側巻線と共に前記一次側回路と絶縁された二次側回路を構成する、チョークコイルを含む二次側電子部品および二次側配線と、
前記一次側回路と前記二次側回路とを直流的に絶縁しながら、前記一次側回路と前記二次側回路とを跨いで接続されている回路間電子部品と、前記回路間電子部品と前記一次側回路とを接続する一次側回路間配線と、を備える絶縁型DC−DCコンバータであって、
前記チョークコイルは、前記基板の一方主面と間隔をおいて配置されており、
前記一次側電子部品および前記回路間電子部品の中から選ばれる少なくとも1つの電子部品、前記一次側配線の一部、および前記一次側回路間配線の一部の中から選ばれる少なくとも1つが、前記チョークコイルと前記基板の一方主面との間に配置されていることを特徴とする、絶縁型DC−DCコンバータ。 - 前記基板の一方主面上において、前記一次側電子部品と電気的に接続されている接続ランドおよび前記一次側配線が配置されている領域を一次側領域とし、前記二次側電子部品と電気的に接続されている接続ランドおよび前記二次側配線が配置されている領域を二次側領域とし、前記一次側領域と前記二次側領域との間にあって、前記一次側回路と前記二次側回路とを絶縁しており、前記トランス、前記回路間電子部品および前記一次側回路間配線が配置されている領域を絶縁領域としたときに、
前記チョークコイルは、前記チョークコイルが備える第1の端子および第2の端子、ならびに前記第1の端子および前記第2の端子と電気的に接続されておらず、かつ前記一次側領域上に配置されている支持体によって、前記絶縁領域を跨ぐように前記基板の一方主面と間隔をおいて配置されていることを特徴とする、請求項1に記載の絶縁型DC−DCコンバータ。 - 前記チョークコイルと前記基板の一方主面との間に少なくとも前記回路間電子部品が配置されており、前記回路間電子部品は、コンデンサ、アイソレータ、およびフォトカプラから選ばれる少なくとも1つであることを特徴とする、請求項1または2に記載の絶縁型DC−DCコンバータ。
- 前記チョークコイルと前記基板の一方主面との間に少なくとも前記一次側電子部品が配置されており、前記一次側電子部品は、スイッチング素子であることを特徴とする、請求項1ないし3のいずれか1項に記載の絶縁型DC−DCコンバータ。
- 前記チョークコイルと前記スイッチング素子との間に、電波吸収体が配置されていることを特徴とする、請求項4に記載の絶縁型DC−DCコンバータ。
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JP2015153690 | 2015-08-03 | ||
JP2015153690 | 2015-08-03 | ||
PCT/JP2016/063258 WO2017022284A1 (ja) | 2015-08-03 | 2016-04-27 | 絶縁型dc-dcコンバータ |
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JPWO2017022284A1 true JPWO2017022284A1 (ja) | 2018-05-24 |
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US (1) | US10497631B2 (ja) |
JP (1) | JP6409976B2 (ja) |
CN (1) | CN107852094B (ja) |
WO (1) | WO2017022284A1 (ja) |
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CN113366636A (zh) * | 2019-03-22 | 2021-09-07 | 株式会社村田制作所 | 电路模块 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07288978A (ja) * | 1994-04-18 | 1995-10-31 | Matsushita Electric Works Ltd | スイッチング電源装置 |
JP2002142457A (ja) * | 2000-10-30 | 2002-05-17 | Tdk Corp | スイッチング電源 |
JP2010268623A (ja) * | 2009-05-15 | 2010-11-25 | Hitachi Koki Co Ltd | 充電装置 |
JP2011050160A (ja) * | 2009-08-26 | 2011-03-10 | Toyota Industries Corp | 絶縁型dc−dcコンバータ |
JP2014147295A (ja) * | 2014-05-23 | 2014-08-14 | Denso Corp | Dc−dcコンバータ |
JP2015043683A (ja) * | 2013-07-24 | 2015-03-05 | 株式会社デンソー | 電源装置 |
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JP3363540B2 (ja) | 1993-09-28 | 2003-01-08 | キヤノン株式会社 | 高圧電源回路及び画像記録装置 |
JP3115567B1 (ja) | 1999-09-29 | 2000-12-11 | 株式会社タムラ製作所 | 電源用回路ブロック |
JP3697184B2 (ja) | 2001-08-27 | 2005-09-21 | 株式会社ルネサステクノロジ | 電圧調整モジュール(vrm) |
JP2004022486A (ja) | 2002-06-20 | 2004-01-22 | Canon Inc | 加熱体、加熱装置および画像形成装置 |
JPWO2006123482A1 (ja) * | 2005-05-20 | 2008-12-25 | 株式会社村田製作所 | 積層型方向性結合器 |
US7385832B2 (en) * | 2006-07-03 | 2008-06-10 | Semiconductor Components Industries, L.L.C. | Method of forming a secondary-side controller and structure therefor |
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KR20100092157A (ko) * | 2009-02-12 | 2010-08-20 | 삼성전기주식회사 | 전도 emi 저감을 위한 파워 컨버터 트랜스포머 및 이를 포함하는 전원 장치 |
CN104428985B (zh) * | 2012-07-13 | 2018-09-14 | 瑞典爱立信有限公司 | 具有提高的轻负载效率的开关式电源 |
TWI462445B (zh) * | 2012-10-19 | 2014-11-21 | Lite On Technology Corp | 電源轉換裝置 |
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JP6584652B2 (ja) * | 2016-04-26 | 2019-10-02 | 三菱電機株式会社 | 電力用回路装置 |
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2016
- 2016-04-27 WO PCT/JP2016/063258 patent/WO2017022284A1/ja active Application Filing
- 2016-04-27 CN CN201680041343.XA patent/CN107852094B/zh active Active
- 2016-04-27 JP JP2017532395A patent/JP6409976B2/ja active Active
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JPH07288978A (ja) * | 1994-04-18 | 1995-10-31 | Matsushita Electric Works Ltd | スイッチング電源装置 |
JP2002142457A (ja) * | 2000-10-30 | 2002-05-17 | Tdk Corp | スイッチング電源 |
JP2010268623A (ja) * | 2009-05-15 | 2010-11-25 | Hitachi Koki Co Ltd | 充電装置 |
JP2011050160A (ja) * | 2009-08-26 | 2011-03-10 | Toyota Industries Corp | 絶縁型dc−dcコンバータ |
JP2015043683A (ja) * | 2013-07-24 | 2015-03-05 | 株式会社デンソー | 電源装置 |
JP2014147295A (ja) * | 2014-05-23 | 2014-08-14 | Denso Corp | Dc−dcコンバータ |
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JP6409976B2 (ja) | 2018-10-24 |
CN107852094A (zh) | 2018-03-27 |
US20180145598A1 (en) | 2018-05-24 |
US10497631B2 (en) | 2019-12-03 |
CN107852094B (zh) | 2020-05-15 |
WO2017022284A1 (ja) | 2017-02-09 |
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