JPWO2016203595A1 - 金属酸化膜の成膜方法 - Google Patents
金属酸化膜の成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 55
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 55
- 239000003595 mist Substances 0.000 claims abstract description 282
- 238000006243 chemical reaction Methods 0.000 claims abstract description 101
- 239000002994 raw material Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 71
- 238000002156 mixing Methods 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 67
- 229910052710 silicon Inorganic materials 0.000 abstract description 67
- 239000010703 silicon Substances 0.000 abstract description 67
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 174
- 239000000243 solution Substances 0.000 description 146
- 238000002161 passivation Methods 0.000 description 71
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- -1 alkoxide compound Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Abstract
Description
図6は、本実施の形態(実施の形態1,実施の形態2)である金属酸化膜の製造方法を用いて製造される太陽電池構造を示す断面図である。
図1は、この発明の実施の形態1である、裏面パッシベーション膜5(金属酸化膜)の成膜方法を実現するための成膜装置の概略構成を示す説明図である。
次に、実施の形態1の裏面パッシベーション膜5(酸化アルミニウム膜)の成膜方法について説明する。
上述した実施の形態1は、原料溶液14と反応支援溶液24とを別々の溶液容器15及び溶液容器25内でミスト化させ、発生したそれぞれの原料溶液ミストM1及び支援剤ミストM2を、反応容器11内に設けられたノズル12へ異なる経路L1及びL2を介して供給し、ノズル12内にて混合ミストM3を得た後に裏面パッシベーション膜5の成膜を行う方法である。
図4は、この発明の実施の形態2である、裏面パッシベーション膜5の成膜方法を実現するための成膜装置の概略構成を示す説明図である。以下、図1及び図2で示した実施の形態1の成膜装置101と同様な構成の説明を適宜省略して、実施の形態1と異なる構成を中心に説明する。
次に、実施の形態2である、裏面パッシベーション膜5(酸化アルミニウム膜)の成膜方法について説明する。なお、実施の形態1と同じ内容については適宜説明を省略する。
図5は図4で示した混合容器8の構造の詳細を示す説明図であり、図5(a) が上面図であり、図5(b) が図5(a) のA−A断面を示す断面図である。図5(a) ,(b) それぞれにXYZ直交座標系を示している。
なお、上述した実施の形態では、基板の一方主面上に形成する金属酸化膜の成膜方法として、太陽電池の製造方法におけるP型シリコン基板4の裏面上に裏面パッシベーション膜5を製造する例を示したが、上述した例に限定されないことは勿論である。例えば、P型シリコン基板4以外の基板としてガラス基板のような絶縁性基板を用いてもよく、パッシベーション膜以外の目的で金属酸化膜を形成してもよい。すなわち、本願発明は、ミスト法を用いて基板の一方主面上に金属酸化膜を成膜する金属酸化膜の成膜方法全般に適用可能であり、酸化アルミニウム膜等の金蔵酸化膜そのものの性能向上効果を奏している。
5 裏面パッシベーション膜
8 混合容器
11 反応容器
12 ノズル
13 加熱器
14 原料溶液
15,25 溶液容器
16,26 ミスト化器
24 反応支援溶液
80 容器本体
81,82 ミスト供給部
83 ミスト取り出し部
101,102 成膜装置
L1〜L3 経路
R80 外周経路
Claims (5)
- (a) 第1の容器(15)内において、金属元素を含む原料溶液(14)をミスト化させて原料溶液ミスト(M1)を得るステップと、
(b) 前記第1の容器と独立した第2の容器(25)内において、前記金属元素用の反応支援剤を含む反応支援溶液(24)をミスト化させて支援剤ミスト(M2)を得るステップと、
(c) 互いに独立した第1及び第2の経路(L1,L2)を介して前記原料溶液ミスト及び前記支援剤ミストを受ける混合容器(8)内において、前記原料溶液ミストと前記支援剤ミストとを混合して混合ミスト(M3)を得るステップと、
(d) 前記ステップ(c) で得た前記混合ミストを反応容器内における基板の一方主面上に供給しつつ、前記基板(4)を加熱して、前記基板の一方主面上に前記金属元素を含む金属酸化膜を成膜するステップとを備える、
金属酸化膜の成膜方法。 - 請求項1記載の金属酸化膜の成膜方法であって、
前記混合容器は、
容器本体(80)と、
前記第1及び第2の経路に接続され、前記原料溶液ミスト及び前記支援剤ミストを前記容器本体内に供給する第1及び第2のミスト供給部(81,82)と、
前記容器本体の内部に設けられた混合ミスト入力口(83I)及び前記容器本体の外部に設けられた混合ミスト出力口(83O)を有し、前記混合ミスト入力口から前記混合ミストを受け、前記混合ミスト出力口から前記混合ミストを取り出すミスト取り出し部(83)とを含み、前記混合ミスト出力口から得られる前記混合ミストが第3の経路(L3)を介して前記反応容器内に供給され、
前記容器本体は内部に、前記第1及び第2のミスト供給部から供給された前記原料溶液ミスト及び前記支援剤ミストを流通させつつ前記混合ミスト入力口に導く混合経路(R80)を有する、
金属酸化膜の成膜方法。 - 請求項2記載の金属酸化膜の成膜方法であって、
前記第1及び第2のミスト供給部は前記容器本体において互いに同一の形成高さに設けられ、前記混合ミスト入力口は前記第1及び第2のミスト供給部より低い形成高さに設けられる、
金属酸化膜の成膜方法。 - 請求項3記載の金属酸化膜の成膜方法であって、
前記容器本体は円筒形状を呈し、
前記ミスト取り出し部は前記容器本体内の平面視中央部に設けられ、内部空洞の円筒形状を呈し、前記混合ミスト入力口を下面に有し、前記混合ミスト出力口を上面に有し、
前記混合経路は、前記容器本体の側面内周部と前記ミスト取り出し部の側面外周部との間の空間によって平面視して円周状に形成される、
金属酸化膜の成膜方法。 - 請求項4記載の金属酸化膜の成膜方法であって、
前記第1及び第2のミスト供給部は、
前記容器本体の側面内周部の接線方向に沿って前記原料溶液ミスト及び前記支援剤ミストを供給するように設けられる、
金属酸化膜の成膜方法。
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US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
KR20120090996A (ko) * | 2009-08-27 | 2012-08-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법 |
US9561479B2 (en) * | 2011-01-31 | 2017-02-07 | Asahi Kasei Chemicals Corporation | Apparatus for producing mixed solution and method for preparing mixed solution |
KR20140101854A (ko) | 2012-02-08 | 2014-08-20 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 금속산화막의 제조 방법 및 금속산화막 |
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WO2012124047A1 (ja) * | 2011-03-15 | 2012-09-20 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
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HK1245854A1 (zh) | 2018-08-31 |
DE112015006632T5 (de) | 2018-03-01 |
US20180190859A1 (en) | 2018-07-05 |
WO2016203595A1 (ja) | 2016-12-22 |
TWI589721B (zh) | 2017-07-01 |
CN107683347B (zh) | 2020-05-15 |
CN107683347A (zh) | 2018-02-09 |
DE112015006632B4 (de) | 2023-09-21 |
JP6473231B2 (ja) | 2019-02-20 |
TW201700769A (zh) | 2017-01-01 |
US10290762B2 (en) | 2019-05-14 |
KR102074049B1 (ko) | 2020-02-05 |
KR20170141227A (ko) | 2017-12-22 |
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