JPWO2016147710A1 - Thin film forming equipment - Google Patents

Thin film forming equipment Download PDF

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JPWO2016147710A1
JPWO2016147710A1 JP2017506125A JP2017506125A JPWO2016147710A1 JP WO2016147710 A1 JPWO2016147710 A1 JP WO2016147710A1 JP 2017506125 A JP2017506125 A JP 2017506125A JP 2017506125 A JP2017506125 A JP 2017506125A JP WO2016147710 A1 JPWO2016147710 A1 JP WO2016147710A1
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film forming
film formation
thin film
mask
formation target
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JP6500084B2 (en
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充 上野
充 上野
敬臣 倉田
敬臣 倉田
新井 真
新井  真
清田 淳也
淳也 清田
一也 齋藤
一也 齋藤
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Ulvac Inc
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52Means for observation of the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

低コストで量産性の高い薄膜形成装置を提供する。成膜室11の内部にターンテーブルからなる回転装置21を配置し、アラインメント場所16上で成膜対象物5a、5bのアラインメントを行った後、回転装置21に設けられた基板ホルダ34a、34bに、マスク4a、4bとの間のアラインメントがされた成膜対象物5a、5bを配置し、回転装置21を回転させて成膜場所15上に移動させる。次いで、成膜材料の微粒子を放出させながら成膜源22を移動させ、成膜場所15上の成膜対象物5a、5bに薄膜を形成する。このとき、アラインメント場所16上に未成膜の成膜対象物5a、5bを配置し、位置合を行うことができる。従って、本薄膜形成装置10では、成膜源22と、アラインメントに要する装置とが、一台で済む。A low-cost and high-productivity thin film forming apparatus is provided. A rotation device 21 including a turntable is arranged inside the film formation chamber 11, and after alignment of the film formation objects 5 a and 5 b on the alignment place 16, the substrate holders 34 a and 34 b provided in the rotation device 21 are placed on the substrate holders 34 a and 34 b. The film forming objects 5a and 5b aligned with the masks 4a and 4b are arranged, and the rotating device 21 is rotated and moved onto the film forming place 15. Next, the film forming source 22 is moved while releasing the fine particles of the film forming material, and a thin film is formed on the film forming objects 5 a and 5 b on the film forming place 15. At this time, the undeposited film formation objects 5a and 5b can be arranged on the alignment place 16 to perform alignment. Therefore, in the thin film forming apparatus 10, only one film forming source 22 and an apparatus required for alignment are required.

Description

本発明は、薄膜形成装置の技術分野に係り、特に、効率よく薄膜を形成する薄膜形成装置に関する。   The present invention relates to a technical field of a thin film forming apparatus, and more particularly to a thin film forming apparatus that efficiently forms a thin film.

ガラス基板等の大型の成膜対象物に成膜材料の薄膜を形成する際には、成膜対象物を真空室内に配置し、成膜材料の蒸気等の微粒子を成膜源から放出させながら、成膜対象物と対向する位置を移動させ、成膜対象物の表面に微粒子を付着させる技術が広く用いられている。   When forming a thin film of film formation material on a large film formation target such as a glass substrate, the film formation target is placed in a vacuum chamber and fine particles such as vapor of the film formation material are released from the film formation source. A technique is widely used in which fine particles are adhered to the surface of a film formation target by moving a position facing the film formation target.

図6の符号110は、その技術の薄膜形成装置であり、搬送室112の周囲に二台の成膜室111a、111bと、複数台の真空室113とが配置され、各室111a、111b、113は搬送室112に接続されている。   Reference numeral 110 in FIG. 6 is a thin film forming apparatus of the technology, in which two film forming chambers 111a and 111b and a plurality of vacuum chambers 113 are arranged around the transfer chamber 112, and each chamber 111a, 111b, 113 is connected to the transfer chamber 112.

二台の成膜室111a、111bの内部には、基板ホルダ121がそれぞれ配置されており、基板ホルダ121の上方には、カメラ等の撮像装置135が配置され、下方には、成膜源122が配置されている。
成膜源122は、成膜源移動装置131に取り付けられており、成膜源移動装置131が動作すると、成膜源122は、基板ホルダ121の下方位置で水平方向に往復移動される。
A substrate holder 121 is disposed inside each of the two film forming chambers 111a and 111b, an imaging device 135 such as a camera is disposed above the substrate holder 121, and a film forming source 122 is disposed below. Is arranged.
The film forming source 122 is attached to the film forming source moving device 131, and when the film forming source moving device 131 operates, the film forming source 122 is reciprocated in the horizontal direction at a position below the substrate holder 121.

搬送室112の内部には、基板搬送ロボットから成る基板移動装置125が配置されている。図6(b)の符号105aは、基板移動装置125によって、成膜室111aの内部に搬入され、基板ホルダ121上に配置された成膜対象物を示している。   Inside the transfer chamber 112, a substrate moving device 125 including a substrate transfer robot is disposed. Reference numeral 105 a in FIG. 6B denotes a film formation target that is carried into the film formation chamber 111 a by the substrate moving device 125 and placed on the substrate holder 121.

この成膜対象物105aが成膜室111a内に搬入された時には、基板ホルダ121上に配置される前に、成膜室111aの内部でアラインメント移動装置(不図示)に配置され、その状態で、撮像装置135によって、成膜対象物105aのアラインメントマークと基板ホルダ121のアラインメントマークとが撮像されており、撮像結果は、制御装置136に出力され、成膜対象物105aと基板ホルダ121との間の位置誤差が検出されており、成膜対象物105aは、制御装置136によって、位置誤差が小さくなるように移動され、位置誤差が小さくされた状態で、基板ホルダ121上に配置されている。
基板ホルダ121には、貫通孔が設けられており、基板ホルダ121に配置された成膜対象物105aの表面は、貫通孔の底面に露出されている。
When this film forming object 105a is carried into the film forming chamber 111a, it is placed in an alignment moving device (not shown) inside the film forming chamber 111a before being placed on the substrate holder 121. The imaging device 135 images the alignment mark of the film formation target 105 a and the alignment mark of the substrate holder 121, and the imaging result is output to the control device 136, and the film formation target 105 a and the substrate holder 121 are A position error is detected, and the film formation target 105a is moved by the control device 136 so as to reduce the position error, and is disposed on the substrate holder 121 in a state where the position error is reduced. .
The substrate holder 121 is provided with a through hole, and the surface of the film-forming target 105a disposed on the substrate holder 121 is exposed at the bottom surface of the through hole.

成膜源122の表面のうち、成膜対象物105aと対面する部分には、放出孔123が複数個設けられており、放出孔123から成膜材料の微粒子を放出しながら成膜源移動装置131によって成膜源122が移動されると、成膜対象物105aの貫通孔底面に露出した表面に微粒子が到達し、付着して薄膜が成長される。   A part of the surface of the film forming source 122 facing the film forming target 105 a is provided with a plurality of discharge holes 123, and the film forming source moving apparatus is configured to discharge fine particles of the film forming material from the discharge holes 123. When the film formation source 122 is moved by 131, fine particles reach the surface exposed on the bottom surface of the through hole of the film formation target object 105a, and adhere to grow a thin film.

図6(b)では、一方の成膜室111aの内部で成膜対象物105aの表面に薄膜を形成している間に、他方の成膜室111bの内部に、基板移動装置125に載せられた成膜対象物105bが搬入されている。   In FIG. 6B, while a thin film is formed on the surface of the film formation target 105a inside one film formation chamber 111a, the film is placed on the substrate transfer device 125 inside the other film formation chamber 111b. The film formation target 105b is carried in.

このように、図6(a)、(b)の薄膜形成装置110では、一方の成膜室111aの内部で成膜対象物105aの表面に薄膜が形成されている間に、他方の成膜室111bの内部へ、未成膜の成膜対象物105bを搬入し、成膜対象物105bの位置あわせを行うことができるから、成膜対象物105a、105bへの成膜工程は中断されずに済む。   As described above, in the thin film forming apparatus 110 shown in FIGS. 6A and 6B, the other film is formed while the thin film is formed on the surface of the film forming object 105a inside the one film forming chamber 111a. Since the undeposited film formation target 105b can be carried into the chamber 111b and the film formation target 105b can be aligned, the film formation process on the film formation targets 105a and 105b is not interrupted. That's it.

しかしながら、この薄膜形成装置110では、二台の成膜室111a、111bで一台の基板移動装置125を共有しているものの、二台の成膜室111a、111bの内部には、成膜源122と、成膜源移動装置131とがそれぞれ配置されており、低コストにならない。   However, in this thin film forming apparatus 110, although the two film forming chambers 111a and 111b share one substrate transfer device 125, the film forming source is formed inside the two film forming chambers 111a and 111b. 122 and the film forming source moving device 131 are disposed, and the cost is not reduced.

図7(a)の薄膜形成装置210では、搬送室212の周囲に一台の成膜室211と複数の真空室214とが接続されており、その一台の成膜室211の内部に、二台の基板ホルダ221a、221bが配置されている。   In the thin film forming apparatus 210 in FIG. 7A, one film forming chamber 211 and a plurality of vacuum chambers 214 are connected around the transfer chamber 212, and inside the one film forming chamber 211, Two substrate holders 221a and 221b are arranged.

成膜源移動装置231は、一方の基板ホルダ221aの下方位置と他方の基板ホルダ221bの下方位置とに亘って配置されており、一台の成膜源222が、成膜源移動装置231によって移動されると二台の基板ホルダ221a、221bのいずれとでも対面しながら移動することができる。   The film formation source moving device 231 is arranged across the lower position of one substrate holder 221a and the lower position of the other substrate holder 221b, and one film formation source 222 is moved by the film formation source moving device 231. When it is moved, it can move while facing any of the two substrate holders 221a and 221b.

従って、同図(b)に示すように、一方の基板ホルダ221a上に成膜対象物205aを配置し、その成膜対象物205aの下方位置で、放出孔223から成膜材料の微粒子を放出させながら、成膜源222が成膜対象物205aと対面して移動し、薄膜を成長させる最中に、搬送室212内に配置された基板移動装置225上に未成膜の成膜対象物205bを載せ、成膜室211内に搬入し、他方の基板ホルダ221bとのアラインメントを行うことができる。   Therefore, as shown in FIG. 2B, the film formation target 205a is arranged on one substrate holder 221a, and fine particles of the film formation material are released from the discharge hole 223 at a position below the film formation target 205a. While the film forming source 222 moves to face the film forming object 205a and grows the thin film, the film forming object 205b that has not been formed on the substrate moving device 225 disposed in the transfer chamber 212 is grown. Can be carried into the film formation chamber 211 and aligned with the other substrate holder 221b.

しかしながら、この薄膜形成装置210では、成膜源222を一台にすることができたが、各基板ホルダ221a、221b上には、撮像装置235や、アラインメント移動装置をそれぞれ配置する必要があり、一層低コストの薄膜形成装置が求められている。   However, in this thin film forming apparatus 210, the film forming source 222 can be integrated, but it is necessary to arrange the imaging device 235 and the alignment moving device on each of the substrate holders 221a and 221b. There is a need for a lower cost thin film forming apparatus.

特開2012−174609号公報JP 2012-174609 A 特許4510609号Japanese Patent No. 4510609

本発明は上記従来技術の不都合を解決するために創作されたものであり、その目的は、低コストの薄膜形成装置を提供することにある。   The present invention has been made to solve the above-described disadvantages of the prior art, and an object thereof is to provide a low-cost thin film forming apparatus.

上記課題を解決するために本発明は、成膜室と、前記成膜室内に配置され、マスクと成膜対象物とが配置される複数の基板ホルダが設けられ、前記成膜室内で回転する回転装置と、アラインメント場所に位置する前記基板ホルダに配置された前記マスクと、前記マスクと対面する前記成膜対象物とを撮像する主撮像装置と、前記主撮像装置の撮像結果から、前記マスクと前記成膜対象物との間の第一の位置誤差を求め、前記第一の位置誤差を小さくするように、前記成膜対象物を移動させ、位置合わせがされた状態で前記マスクに前記成膜対象物を配置する制御装置と、前記成膜室の内部に配置され、成膜材料の微粒子を放出する成膜源と、前記成膜源を前記成膜室の内部で移動させ、成膜場所と対面する場所を通過させる成膜源移動装置と、を有し、前記回転装置の回転によって、位置合わせがされた前記マスクと前記成膜対象物とが前記アラインメント場所から前記成膜場所に移動され、前記成膜源が前記微粒子を放出しながら前記成膜場所と対面する場所を通過して、前記微粒子が、前記基板ホルダの貫通孔と前記マスクの窓部とを通過して前記成膜対象物に到達し、薄膜が形成される薄膜形成装置である。
本発明は、前記成膜場所に位置する前記マスクと前記成膜対象物とを撮像する補助撮像装置が設けられ、前記補助撮像装置が撮像した結果から、前記成膜対象物と前記マスクとの間の第二の位置誤差が求められる薄膜形成装置である。
本発明は、前記マスクと、前記マスク上に配置された前記成膜対象物とを前記回転装置に固定する保持装置を有する薄膜形成装置である。
本発明は、前記第二の位置誤差が第二の基準値と比較され、前記第二の位置誤差が前記第二の基準値より大きい場合には、前記成膜対象物は、前記薄膜が形成されずに、前記回転装置の回転によって、前記マスクと共に前記アラインメント場所に戻される薄膜形成装置である。
本発明は、成膜室と、前記成膜室内に配置され、成膜対象物が配置される複数の基板ホルダが設けられ、前記成膜室内で回転する回転装置と、アラインメント場所に位置する前記基板ホルダと、前記基板ホルダに対面する成膜対象物とを撮像する主撮像装置と、前記主撮像装置の撮像結果から、前記基板ホルダと前記成膜対象物との間の第一の位置誤差を求め、前記第一の位置誤差を小さくするように、前記成膜対象物を移動させ、位置合わせがされた状態で前記基板ホルダに前記成膜対象物を配置する制御装置と、前記成膜室の内部に配置され、成膜材料の微粒子を放出する成膜源と、前記成膜源を前記成膜室の内部で移動させ、成膜場所と対面する場所を通過させる成膜源移動装置と、を有し、前記回転装置の回転によって、位置合わせがされた前記基板ホルダと前記成膜対象物とが前記アラインメント場所から前記成膜場所に移動され、前記成膜源が前記微粒子を放出しながら前記成膜場所と対面する場所を通過して、前記微粒子が、前記基板ホルダの貫通孔を通過して前記成膜対象物に到達し、薄膜が形成される薄膜形成装置である。
本発明は、前記成膜場所に位置する前記基板ホルダと前記成膜対象物とを撮像する補助撮像装置が設けられ、前記補助撮像装置が撮像した結果から、前記成膜対象物と前記マスクとの間の第二の位置誤差が求められる薄膜形成装置である。
本発明は、前記基板ホルダと、前記基板ホルダ上に配置された前記成膜対象物とを前記回転装置に固定する保持装置を有する薄膜形成装置である。
本発明は、前記第二の位置誤差が第二の基準値と比較され、前記第二の位置誤差が前記第二の基準値より大きい場合には、前記成膜対象物は、前記薄膜が形成されずに、前記回転装置の回転によって、前記アラインメント場所に戻される薄膜形成装置である。
本発明は、前記基板ホルダは二台設けられ、前記回転装置の回転中心を中心として、二台の前記基板ホルダは互いに反対側に設けられた薄膜形成装置である。
In order to solve the above problems, the present invention is provided with a film formation chamber, a plurality of substrate holders disposed in the film formation chamber, in which a mask and a film formation target are disposed, and are rotated in the film formation chamber. From the imaging device of the main imaging device, the main imaging device for imaging the rotation device, the mask placed on the substrate holder located at the alignment location, the film formation target facing the mask, the mask The first position error between the first and second film formation objects is determined, the film formation object is moved so as to reduce the first position error, and the mask is placed on the mask in the aligned state. A control device that arranges a film formation target, a film formation source that is disposed inside the film formation chamber and discharges fine particles of the film formation material, and the film formation source is moved inside the film formation chamber. A deposition source moving device that passes through a location facing the membrane location; And the aligned mask and the deposition target are moved from the alignment location to the deposition location by the rotation of the rotating device, and the deposition source releases the fine particles while A thin film forming apparatus in which the fine particles pass through a place facing the film forming place, pass through the through hole of the substrate holder and the window portion of the mask, reach the film forming target, and form a thin film It is.
The present invention is provided with an auxiliary imaging device that images the mask and the film formation target located at the film formation location, and from the result of imaging by the auxiliary imaging device, the film formation target and the mask This is a thin film forming apparatus in which a second positional error is required.
The present invention is a thin film forming apparatus including a holding device that fixes the mask and the film formation target disposed on the mask to the rotating device.
In the present invention, when the second position error is compared with a second reference value and the second position error is larger than the second reference value, the thin film is formed on the film formation target. Instead, the thin film forming apparatus is returned to the alignment location together with the mask by the rotation of the rotating device.
The present invention is provided with a film forming chamber, a plurality of substrate holders disposed in the film forming chamber and on which a film forming target is disposed, a rotating device that rotates in the film forming chamber, and the rotation device positioned in an alignment place A main imaging device that images a substrate holder, a film formation target facing the substrate holder, and a first position error between the substrate holder and the film formation target based on an imaging result of the main imaging device The film forming object is moved so as to reduce the first position error, and the film forming object is placed on the substrate holder in the aligned state, and the film forming A film forming source disposed inside the chamber for discharging fine particles of the film forming material, and a film forming source moving device configured to move the film forming source within the film forming chamber and pass a place facing the film forming place And alignment by rotation of the rotating device The substrate holder and the object to be deposited are moved from the alignment location to the deposition location, and the deposition source passes through a location facing the deposition location while releasing the fine particles, In the thin film forming apparatus, the fine particles pass through the through-hole of the substrate holder and reach the film formation target to form a thin film.
The present invention is provided with an auxiliary imaging device that images the substrate holder and the film formation target located at the film formation location, and from the result of imaging by the auxiliary imaging device, the film formation target and the mask It is a thin film forming apparatus for which a second position error is required.
The present invention is a thin film forming apparatus having a holding device for fixing the substrate holder and the film formation target disposed on the substrate holder to the rotating device.
In the present invention, when the second position error is compared with a second reference value and the second position error is larger than the second reference value, the thin film is formed on the film formation target. Instead, the thin film forming apparatus is returned to the alignment place by the rotation of the rotating device.
The present invention is the thin film forming apparatus in which the two substrate holders are provided, and the two substrate holders are provided on opposite sides of the rotation center of the rotation device.

本発明によれば、成膜源と、位置合わせに要する装置を複数設けずに、成膜対象物の表面に薄膜を形成しながら、他の成膜対象物の位置合わせを行うことができる。
保持装置によって、回転移動中の位置誤差発生が防止されるし、発生した場合には、補助撮像装置によって成膜前に検出され、再度位置合わせを行うことができるから、回転移動で発生した位置誤差による不良は無くなる。
According to the present invention, it is possible to perform alignment of another film formation object while forming a thin film on the surface of the film formation object without providing a plurality of film forming sources and a plurality of devices required for alignment.
Position error generation during rotational movement is prevented by the holding device, and if it occurs, it can be detected by the auxiliary imaging device before film formation, and alignment can be performed again. Defects due to errors are eliminated.

本発明の薄膜形成装置の内部平面図Internal plan view of the thin film forming apparatus of the present invention (a1):図1のA−A線截断断面図、(a2):成膜対象物を配置した状態をA−A線截断断面図を用いて説明するための図、(b1):図1のB−B線截断断面図、(b2):成膜対象物を配置した状態をB−B線截断断面図を用いて説明するための図(a1): AA sectional view taken along the line AA in FIG. 1, (a2): A diagram for explaining the state in which the film-forming target is arranged, using the AA sectional view taken along the line, (b1): FIG. BB line cutting sectional view of (b2): The figure for demonstrating the state which has arrange | positioned the film-forming target using a BB line cutting sectional view (a)〜(c):成膜工程を説明するための平面図(1)(a)-(c): Plan view for explaining a film forming process (1) (d)〜(f):成膜工程を説明するための平面図(2)(d)-(f): Plan view for explaining the film forming process (2) (g)〜(i):成膜工程を説明するための平面図(3)(g) to (i): plan view for explaining the film forming process (3) (a)、(b):従来技術の薄膜形成装置(1)(A), (b): Conventional thin film forming apparatus (1) (a)、(b):従来技術の薄膜形成装置(2)(A), (b): Conventional thin film forming apparatus (2)

本発明の薄膜形成装置を説明する。
図1を参照し、本発明の薄膜形成装置10は、搬送室12を有している。
搬送室12の周囲には、薄膜を形成する成膜室11と、薄膜形成の前処理や後処理を行う真空室14と、成膜対象物の搬出入を行う搬出入室13とが配置され、各室11、13、14は、搬送室12に接続されている。
The thin film forming apparatus of the present invention will be described.
Referring to FIG. 1, a thin film forming apparatus 10 of the present invention has a transfer chamber 12.
Around the transfer chamber 12, a film forming chamber 11 for forming a thin film, a vacuum chamber 14 for performing pre-processing and post-processing for forming a thin film, and a carry-in / out chamber 13 for carrying in and out a film-forming target are disposed. Each chamber 11, 13, 14 is connected to the transfer chamber 12.

各室11〜14には真空排気装置が設けられており、それぞれ真空排気されるように構成されている。図1の符号18は成膜室11に接続された真空排気装置であり、符号19は搬送室12に接続された真空排気装置である。各室11〜14は真空排気され、真空雰囲気が形成されているものとする。各室11〜14は開閉可能な真空バルブで仕切られているが、開閉の説明は省略する。   Each of the chambers 11 to 14 is provided with an evacuation device, and is configured to be evacuated. Reference numeral 18 in FIG. 1 is an evacuation apparatus connected to the film forming chamber 11, and reference numeral 19 is an evacuation apparatus connected to the transfer chamber 12. Each of the chambers 11 to 14 is evacuated to form a vacuum atmosphere. Each chamber 11-14 is partitioned by a vacuum valve that can be opened and closed, but the description of opening and closing is omitted.

搬送室12の内部には、基板搬出入装置25が設けられている。基板搬出入装置25は、腕38とハンド39とを有しており、回転軸37の回転によって腕38が伸縮すると、ハンド39が水平面内で移動するように構成されている。   A substrate carry-in / out device 25 is provided inside the transfer chamber 12. The substrate carry-in / out device 25 has an arm 38 and a hand 39, and is configured such that when the arm 38 expands and contracts by the rotation of the rotation shaft 37, the hand 39 moves in a horizontal plane.

成膜室11で薄膜が形成される成膜対象物は、ハンド39に載せられて、各室11,13,14と搬送室12との間を移動するようにされており、搬出入室13に配置された成膜対象物は、ハンド39に載せられて搬出入室13から取り出され、搬送室12を通って、成膜室11や他の真空室14に搬入される。
成膜室11の内部には、円板状の回転装置21が水平に設けられている。
A film formation target on which a thin film is formed in the film formation chamber 11 is placed on the hand 39 and moved between the chambers 11, 13, 14 and the transfer chamber 12. The arranged film formation target is placed on the hand 39 and taken out from the carry-in / out chamber 13, and then carried into the film-formation chamber 11 and other vacuum chambers 14 through the transfer chamber 12.
Inside the film forming chamber 11, a disk-shaped rotating device 21 is provided horizontally.

ここで、図2(a1)は図1のA−A線截断断面図であり、図2(b1)は図1のB−B線截断断面図である。図2(a1)の符号32は、一端が回転装置21に垂直に取り付けられた回転軸を示している。
成膜室11の外部には、モーター等の駆動装置48が設けられており、回転軸32の他端は、駆動装置48に接続され、駆動装置48が動作すると、回転軸32は、回転軸32の中心軸線回りに回転するようにされている。
2A1 is a cross-sectional view taken along line AA in FIG. 1, and FIG. 2B1 is a cross-sectional view taken along line BB in FIG. Reference numeral 32 in FIG. 2A1 denotes a rotating shaft having one end vertically attached to the rotating device 21.
A driving device 48 such as a motor is provided outside the film forming chamber 11. The other end of the rotating shaft 32 is connected to the driving device 48, and when the driving device 48 operates, the rotating shaft 32 is rotated by the rotating shaft. It is made to rotate around 32 central axes.

そして、回転軸32が、その中心軸線回りに回転すると、回転装置21は、回転軸32が取り付けられた部分の中心である回転中心33を中心として、同一平面内で回転する。ここでは水平面内で回転する。   When the rotating shaft 32 rotates around the central axis, the rotating device 21 rotates in the same plane around the rotation center 33 that is the center of the portion to which the rotating shaft 32 is attached. Here it rotates in a horizontal plane.

回転装置21の両面のうち、一方の面側(ここでは成膜室11の底面側)には、成膜源移動装置31が配置されている。回転装置21は、成膜源移動装置31の真上に位置する部分と、成膜源移動装置31の真上に位置しない部分とに二分されるように配置されており、回転中心33を中心として180度回転したときに、 成膜源移動装置31の真上に位置した部分が、真上に位置しない場所に移動し、成膜源移動装置31の真上に位置しなかった部分が真上に位置する場所に移動するようにされている。   A film forming source moving device 31 is disposed on one surface side (here, the bottom surface side of the film forming chamber 11) of both surfaces of the rotating device 21. The rotating device 21 is arranged so as to be divided into a part located right above the film forming source moving device 31 and a part not located right above the film forming source moving device 31. When the film is rotated 180 degrees, the portion located directly above the film formation source moving device 31 moves to a place not directly above, and the portion not located directly above the film formation source moving device 31 is It is designed to move to a location located above.

回転装置21の他方の面側(ここでは天井側)の成膜源移動装置31の真上に位置する部分の上方には、補助撮像装置45が配置されており、成膜源移動装置31の真上に位置しない部分の上方には主撮像装置35と基板移動装置27とが配置されている。   An auxiliary imaging device 45 is disposed above a portion located on the other surface side (here, the ceiling side) of the rotating device 21 directly above the film forming source moving device 31. A main imaging device 35 and a substrate moving device 27 are disposed above a portion not located directly above.

主撮像装置35と補助撮像装置45とは、成膜室11の外部に配置された主制御装置36と補助制御装置46とにそれぞれ接続されており、主撮像装置35が撮像した撮像結果を示す信号と補助撮像装置45が撮像した撮像結果を示す信号とは、主制御装置36と補助制御装置46とにそれぞれ出力される。   The main imaging device 35 and the auxiliary imaging device 45 are respectively connected to the main control device 36 and the auxiliary control device 46 that are arranged outside the film forming chamber 11, and show the imaging results captured by the main imaging device 35. The signal and the signal indicating the imaging result captured by the auxiliary imaging device 45 are output to the main control device 36 and the auxiliary control device 46, respectively.

回転装置21には、複数の貫通孔49a、49bが形成されており、各貫通孔49a、49bと、各貫通孔49a、49bの縁部分とで、複数の基板ホルダ34a、34bが構成されている。この回転装置21では、回転中心33を中心として、互いに反対側の位置に基板ホルダ34a、34bが一個ずつ形成されており、各基板ホルダ34a、34bには、マスク4a、4bがそれぞれ配置されている。マスク4a、4bは、薄板状の金属板であり、基板ホルダ34a,34bの貫通孔49a、49bの縁上にのせられている。マスク4a、4bには所定の位置に窓部が形成されており、底面には、基板ホルダ34a,34bの貫通孔49a、49bが位置している。   A plurality of through holes 49a and 49b are formed in the rotating device 21, and a plurality of substrate holders 34a and 34b are formed by the through holes 49a and 49b and the edge portions of the through holes 49a and 49b. Yes. In the rotating device 21, substrate holders 34a and 34b are formed one by one at positions opposite to each other around the rotation center 33, and masks 4a and 4b are respectively arranged on the substrate holders 34a and 34b. Yes. The masks 4a and 4b are thin metal plates and are placed on the edges of the through holes 49a and 49b of the substrate holders 34a and 34b. The masks 4a and 4b are formed with windows at predetermined positions, and through holes 49a and 49b of the substrate holders 34a and 34b are located on the bottom surfaces.

回転装置21の回転により、基板ホルダ34a、34bが回転移動する際に、基板ホルダ34a、34bとマスク4a、4bとが成膜室11の内部で静止できる場所として、搬送室12に近くなる場所を、アラインメント場所16とし、回転中心33を中心として、アラインメント場所16とは反対側の場所を成膜場所15とすると、成膜源移動装置31と補助撮像装置45とは成膜場所15と対面できる場所に配置され、主撮像装置35と基板移動装置27とは、アラインメント場所16に対面できる場所に配置されている。   A place near the transfer chamber 12 as a place where the substrate holders 34a, 34b and the masks 4a, 4b can be stopped inside the film forming chamber 11 when the substrate holders 34a, 34b are rotated by the rotation of the rotating device 21. Is the alignment location 16 and the center of rotation 33 is opposite to the alignment location 16 as the deposition location 15, the deposition source moving device 31 and the auxiliary imaging device 45 face the deposition location 15. The main imaging device 35 and the substrate moving device 27 are arranged in a place where they can face the alignment place 16.

搬送室12から成膜室11の内部に搬入された成膜対象物は、先ず、基板移動装置27に配置される。
図3(a)の符号5aは、基板移動装置27に配置された成膜対象物を示している。
First, a film forming object carried into the film forming chamber 11 from the transfer chamber 12 is placed on the substrate moving device 27.
Reference numeral 5 a in FIG. 3A indicates a film formation target placed on the substrate moving device 27.

成膜対象物5aとマスク4a、4bとには、アラインメントマークがそれぞれ設けられており、主撮像装置35によって、基板移動装置27上の成膜対象物5aのアラインメントマークと、マスク4aのアラインメントマークとが撮像され、撮像結果を示す信号が主制御装置36に出力されると、主制御装置36により、撮像結果中のアラインメントマークの相対的な位置関係から、基板移動装置27上に位置する成膜対象物5aと、マスク4aとの間の相対的な位置と、理想的な相対的位置との間のアラインメント場所16上の誤差である第一の位置誤差が求められる。   The film formation target 5a and the masks 4a and 4b are respectively provided with alignment marks. The main imaging device 35 uses the main imaging device 35 to align the film formation target 5a on the substrate moving device 27 and the mask 4a. And the signal indicating the imaging result is output to the main control device 36, the main control device 36 determines the position on the substrate moving device 27 from the relative positional relationship of the alignment marks in the imaging result. A first position error, which is an error on the alignment location 16 between the relative position between the film object 5a and the mask 4a, and the ideal relative position is obtained.

基板移動装置27は、主制御装置36によって制御されている。
主制御装置36には、第一、第二の基準値が記憶されており、主制御装置36によって、第一の位置誤差は、第一の基準値と比較され、第一の位置誤差が第一の基準値よりも大きい場合には、成膜対象物5aとマスク4aとを相対的に移動させて位置誤差を小さくし、主撮像装置35の撮像によって、第一の位置誤差が再度求められる。
The substrate moving device 27 is controlled by the main control device 36.
The main control device 36 stores the first and second reference values. The main control device 36 compares the first position error with the first reference value, and the first position error is the first reference value. When the value is larger than one reference value, the position error is reduced by relatively moving the film formation target 5a and the mask 4a, and the first position error is obtained again by imaging by the main imaging device 35. .

このように、主制御装置36は、主撮像装置35の撮像によって第一の位置誤差を求めることと、第一の位置誤差を第一の基準値と比較することと、第一の位置誤差が第一の基準値よりも大きい場合には、成膜対象物5aとマスク4aとを相対的に移動させて位置誤差を小さくすることと、を繰り返し行う位置合わせ工程を行い、第一の位置誤差が第一の基準値以下になったときに、成膜対象物5aとマスク4aとは位置合わせがされた状態になったものとして、成膜対象物5aを降下させて成膜対象物5aをマスク4a上に配置する。   Thus, the main controller 36 obtains the first position error by imaging the main imaging device 35, compares the first position error with the first reference value, and the first position error is When the value is larger than the first reference value, an alignment process is performed in which the position error is reduced by relatively moving the film formation target 5a and the mask 4a, and the first position error is performed. When the film formation target 5a is equal to or lower than the first reference value, it is assumed that the film formation target 5a and the mask 4a are aligned. It arrange | positions on the mask 4a.

基板ホルダ34a、34bには、保持装置47a、47bが設けられており、アラインメント場所16上のマスク4a、4bと、マスク4a、4bに対して位置合わせされた状態でマスク4a、4b上に配置された成膜対象物5a、5bとは、保持装置47a、47bによってクランプされ、保持装置47a、47bによって、基板ホルダ34a、34bに固定される。その状態を図2(a2)、図2(b2)、図3(b)に示す。   The substrate holders 34a and 34b are provided with holding devices 47a and 47b, and are arranged on the masks 4a and 4b while being aligned with the masks 4a and 4b on the alignment place 16 and the masks 4a and 4b. The film-forming objects 5a and 5b thus formed are clamped by the holding devices 47a and 47b and fixed to the substrate holders 34a and 34b by the holding devices 47a and 47b. The state is shown in FIGS. 2 (a2), 2 (b2), and 3 (b).

基板ホルダ34a、34bは、回転装置21に固定されているので、基板ホルダ34a、34bに固定された成膜対象物5a、5bは、回転装置21に固定されたことになる。   Since the substrate holders 34 a and 34 b are fixed to the rotating device 21, the film formation objects 5 a and 5 b fixed to the substrate holders 34 a and 34 b are fixed to the rotating device 21.

ここで、保持装置47a、47bは、マスク4a、4b上に、位置合わせされた状態で配置された成膜対象物5a、5bとを、マスク4a、4bと一緒に回転装置21に押圧して保持する装置であり、保持装置47a、47bは、バネで押圧して固定する装置や、粘着シートによって、マスク4a、4bと、成膜対象物5a、5bとを回転装置21に接着して固定する装置であってもよい。   Here, the holding devices 47a and 47b press the film forming objects 5a and 5b arranged in alignment on the masks 4a and 4b against the rotating device 21 together with the masks 4a and 4b. The holding devices 47a and 47b are attached by fixing the masks 4a and 4b and the film-forming objects 5a and 5b to the rotating device 21 with an apparatus for pressing and fixing with a spring or an adhesive sheet. It may be a device that performs.

また、保持装置47a、47bは、回転装置21を磁石に吸引される磁性材料で形成しておき、保持装置47a、47bが有する磁石を、マスク4a、4b上に配置された成膜対象物5a、5b上に配置し、磁石と回転装置21との間に吸引力を発生させることで、マスク4a、4bとマスク4a、4b上に配置された成膜対象物5a、5bとを回転装置21に固定するようにしてもよい。   The holding devices 47a and 47b are formed of the magnetic material attracted by the magnets of the rotating device 21, and the magnets of the holding devices 47a and 47b are placed on the masks 4a and 4b. The mask 4a, 4b and the film formation objects 5a, 5b arranged on the masks 4a, 4b are arranged on the rotating device 21 by generating an attractive force between the magnet and the rotating device 21. You may make it fix to.

次に、回転装置21が回転中心33を中心として回転されると、複数(ここでは二台)の基板ホルダ34a、34bは、基板ホルダ34a、34b上のマスク4a、4bと一緒に、図3(c)に示されているように、同じ回転中心33を中心に同方向に同角度回転する。   Next, when the rotating device 21 is rotated around the rotation center 33, a plurality of (here, two) substrate holders 34a and 34b are brought together with the masks 4a and 4b on the substrate holders 34a and 34b as shown in FIG. As shown in (c), the same rotation center 33 is rotated in the same direction and at the same angle.

回転装置21が180度回転すると、図4(d)に示すように、アラインメント場所16に位置していた基板ホルダ34aは成膜場所15に移動し、成膜場所15に位置していた基板ホルダ34bはアラインメント場所16に移動する。   When the rotating device 21 rotates 180 degrees, as shown in FIG. 4D, the substrate holder 34a located at the alignment place 16 moves to the film forming place 15, and the substrate holder located at the film forming place 15 is moved. 34b moves to alignment location 16.

このとき、マスク4aと、そのマスク4a上に配置された成膜対象物5aとは一緒に回転するので、回転装置21の回転速度を大きくしてもマスク4aとそのマスク4a上に配置された成膜対象物5aとの間に位置ずれは発生せず、位置合わせされた状態が維持される。   At this time, since the mask 4a and the film formation target 5a arranged on the mask 4a rotate together, the mask 4a and the mask 4a are arranged on the mask 4a even if the rotation speed of the rotating device 21 is increased. No positional deviation occurs between the film formation target 5a and the aligned state is maintained.

成膜源移動装置31は、成膜場所15と対面する場所と、成膜場所15の両脇の場所とに亘って配置されており、成膜源22は、成膜源移動装置31により、成膜場所15と対面する場所を通過できるようにされている。   The film formation source moving device 31 is disposed across the place facing the film formation location 15 and the locations on both sides of the film formation location 15, and the film formation source 22 is moved by the film formation source transfer device 31. It can pass through a place facing the film forming place 15.

成膜源22の表面のうち、成膜場所15と対面できる位置には放出孔23が設けられており、成膜材料の微粒子が放出孔23から放出される。
成膜材料の微粒子は、成膜源22の内部で生成されてもよいし、別の装置で生成された微粒子が、成膜源22に移動されて、成膜源22の放出孔23から放出されるようにしてもよい。
A discharge hole 23 is provided at a position on the surface of the film formation source 22 that can face the film formation place 15, and fine particles of the film formation material are discharged from the discharge hole 23.
The fine particles of the film forming material may be generated inside the film forming source 22, or the fine particles generated by another apparatus are moved to the film forming source 22 and released from the discharge hole 23 of the film forming source 22. You may be made to do.

成膜場所15上に位置するマスク4aの片面は、基板ホルダ34aの貫通孔49aの底面下で露出されている。
回転装置21が180度回転した後、静止したときに、成膜場所15で静止したマスク4aのアラインメントマークとそのマスク4a上の成膜対象物5aとのアラインメントマークとは、補助撮像装置45によって撮像され、撮像結果は補助制御装置46に出力されている。
One surface of the mask 4a located on the film forming place 15 is exposed under the bottom surface of the through hole 49a of the substrate holder 34a.
When the rotation device 21 rotates 180 degrees and then stops, the alignment mark of the mask 4a that is stationary at the film formation location 15 and the alignment mark of the film formation target 5a on the mask 4a are generated by the auxiliary imaging device 45. The image is captured and the imaging result is output to the auxiliary controller 46.

補助制御装置46は、成膜場所15に位置するマスク4aと成膜対象物5aとの間の相対的な位置関係から、成膜場所15上の位置誤差である第二の位置誤差を求め、第二の位置誤差を第二の基準値と比較し、比較結果を主制御装置36に出力する。
主制御装置36は、第二の位置誤差が第二の基準値以下であった場合は、成膜源22に、微粒子を放出させながら成膜源移動装置31による移動を開始させる。
The auxiliary controller 46 obtains a second positional error, which is a positional error on the film deposition location 15, from the relative positional relationship between the mask 4 a located at the film deposition location 15 and the film formation target 5 a. The second position error is compared with the second reference value, and the comparison result is output to the main controller 36.
When the second position error is equal to or smaller than the second reference value, the main controller 36 causes the film forming source 22 to start moving by the film forming source moving device 31 while discharging the fine particles.

第一の位置誤差と比較された第一の基準値と、第二の位置誤差と比較された第二の基準値とが同じ値であった場合に、第二の位置誤差が第二の基準値よりも大きいと、回転装置21の高速回転と急停止とによって、回転されたマスク4aと成膜対象物5aとの相対位置が変化し、位置誤差が大きくなったことになる。   If the first reference value compared to the first position error and the second reference value compared to the second position error are the same value, the second position error is the second reference value. If the value is larger than the value, the relative position between the rotated mask 4a and the film formation target 5a changes due to the high-speed rotation and sudden stop of the rotating device 21, and the position error becomes large.

第二の位置誤差が第二の基準値よりも大きいと、主制御装置36は、成膜源22の移動を開始せずに回転装置21を回転させ、成膜場所15に位置するマスク4aと成膜対象物5aとを、アラインメント場所16に戻す。   When the second position error is larger than the second reference value, the main controller 36 rotates the rotating device 21 without starting the movement of the film forming source 22, and the mask 4 a positioned at the film forming location 15. The film formation target 5 a is returned to the alignment place 16.

そして、保持装置47aによる保持を解除し、成膜対象物5aを、マスク4aや回転装置21に対して動ける状態にし、次いで、主制御装置36は基板移動装置27を動作させ、成膜対象物5aをマスク4aから離間させ、上述した位置合わせ工程を行い、第一の位置誤差が第一の基準値以下になったところで、成膜対象物5aとマスク4aとは位置合わせがされた状態として、成膜対象物5aを降下させてマスク4a上に配置し、回転装置21を回転させて、アラインメント場所16から成膜場所15に移動させる。   Then, the holding by the holding device 47a is released, and the film formation target 5a is moved to the mask 4a and the rotation device 21, and then the main control unit 36 operates the substrate moving device 27 to form the film formation target. 5a is separated from the mask 4a, the above-described alignment process is performed, and when the first position error is equal to or less than the first reference value, the film formation target 5a and the mask 4a are aligned. Then, the film formation target 5 a is lowered and placed on the mask 4 a, and the rotating device 21 is rotated to move from the alignment place 16 to the film formation place 15.

そして、成膜場所15に位置する成膜対象物5aとマスク4aとを補助撮像装置46によって撮像し、第二の位置誤差を求め、第二の基準値と比較し、第二の基準値よりも大きい場合は、成膜工程を行わずに成膜対象物5aとマスク4aとをアラインメント場所16に戻し、第二の基準値以下の場合は、成膜工程を開始する。   And the film-forming target 5a and the mask 4a located in the film-forming place 15 are imaged by the auxiliary imaging device 46, the second position error is obtained, compared with the second reference value, and from the second reference value Is larger, the film formation target 5a and the mask 4a are returned to the alignment place 16 without performing the film formation process, and when the value is equal to or smaller than the second reference value, the film formation process is started.

このように、再位置合わせを行った場合も、行わなかった場合も、アラインメント場所16から成膜場所15に回転移動されたマスク4aと成膜対象物5aとの間の位置誤差は、第二の位置誤差として検出され、第二の基準値と比較される。   As described above, whether or not re-alignment is performed, the positional error between the mask 4a rotated and moved from the alignment location 16 to the deposition location 15 and the deposition target 5a is the second. Is detected as a position error and compared with a second reference value.

図4(e)は、微粒子を放出しながら移動を開始した成膜源22が、成膜対象物5aと対面する前の状態を示している。
成膜源22が、放出孔23から成膜材料の微粒子を放出しながら、成膜場所15と対面する場所に到達すると、放出された微粒子は、成膜場所15に到達する。
FIG. 4E shows a state before the film formation source 22 that has started moving while discharging fine particles faces the film formation target 5a.
When the film forming source 22 reaches the place facing the film forming place 15 while discharging the fine particles of the film forming material from the discharge hole 23, the discharged fine particles reach the film forming place 15.

成膜場所15には、基板ホルダ34aの貫通孔49aに、マスク4aの表面が露出しており、成膜場所15に到達した微粒子は、基板ホルダ34aの貫通孔49aと、マスク4aの窓部とを通過し、成膜対象物5aのうち、窓部に露出する表面に微粒子が到達し、付着して成膜材料の薄膜が成長する。   In the film formation place 15, the surface of the mask 4a is exposed in the through hole 49a of the substrate holder 34a, and the fine particles reaching the film formation place 15 are passed through the through hole 49a of the substrate holder 34a and the window portion of the mask 4a. Then, the fine particles reach the surface of the film formation target 5a exposed at the window portion and adhere to grow a thin film of the film formation material.

成膜対象物5aは、マスク4aに対して位置合わせされた状態であり、マスク4aに対する位置誤差が小さくされた状態で薄膜が形成されるから、成膜源22が成膜場所15と対面しながら、成膜場所15と対面する場所を通過し、微粒子は、マスク4aの露出する部分に萬遍なく到達し、薄膜は、成膜対象物5a上の薄膜が形成されるべき位置に正確に形成される。   The film formation target 5a is aligned with the mask 4a, and a thin film is formed with a small positional error with respect to the mask 4a. Therefore, the film formation source 22 faces the film formation place 15. However, the particles pass through the place facing the film formation place 15, the fine particles reach the exposed part of the mask 4a uniformly, and the thin film is exactly at the position where the thin film on the film formation target 5a is to be formed. It is formed.

成膜源22が成膜場所15と対面する場所を通過するまでには、基板搬出入装置25により、成膜室11の内部に、未成膜の成膜対象物5bが搬入され、基板移動装置27上に配置されており、成膜場所15に位置する成膜対象物5aに薄膜を形成しているときに、アラインメント場所16では、未成膜の成膜対象物5bのアラインメントマークとアラインメント場所16に位置するマスク4bのアラインメントマークとを主撮像装置35によって撮像し、主制御装置36によって第一の位置誤差を検出し、位置合わせ工程が行われており、成膜源22が成膜場所15と対面する場所を通過する前にアラインメント場所16のマスク4bと成膜対象物5bとの間の位置誤差は小さくされる。   Until the film formation source 22 passes through the place facing the film formation place 15, the substrate carry-in / out device 25 carries the film formation object 5b, which has not been formed, into the film formation chamber 11, and the substrate moving device. When the thin film is formed on the film formation target 5a located on the film formation place 15, the alignment mark of the film formation target 5b that has not been formed and the alignment place 16 are formed at the alignment place 16. The alignment mark of the mask 4b located at the center is imaged by the main imaging device 35, the first position error is detected by the main control device 36, and the alignment process is performed. The position error between the mask 4b at the alignment place 16 and the film formation target 5b is reduced before passing the place facing the film.

次に、位置合わせされた状態を維持しながら、成膜対象物5bは、アラインメント場所16に位置するマスク4b上に配置され、保持装置47bによって回転装置21に固定され、位置合わせがされた成膜対象物5bとマスク4bとは、回転装置21に固定される。   Next, while maintaining the aligned state, the film formation target 5b is placed on the mask 4b positioned at the alignment place 16, fixed to the rotating device 21 by the holding device 47b, and aligned. The film object 5b and the mask 4b are fixed to the rotating device 21.

図4(f)は、アラインメント場所16では、成膜対象物5bがアラインメント場所16に位置するマスク4b上に配置され、保持装置47bによって固定された状態であり、成膜場所15では、成膜源22が成膜場所15と対面する場所を通過した状態が示されている。   FIG. 4 (f) shows a state in which the film formation target 5 b is arranged on the mask 4 b located at the alignment place 16 and fixed by the holding device 47 b at the alignment place 16. The state where the source 22 has passed through the place facing the film forming place 15 is shown.

なお、成膜源22は、アラインメント場所16と対面することはなく、成膜源22が放出する微粒子は、アラインメント場所16に位置する基板ホルダ34bには到達しない。従って、基板移動装置27やアラインメント場所16上に配置された成膜対象物5bには、薄膜は成長しない。   The film forming source 22 does not face the alignment place 16, and the fine particles emitted from the film forming source 22 do not reach the substrate holder 34 b located at the alignment place 16. Therefore, the thin film does not grow on the film forming target 5b arranged on the substrate moving device 27 or the alignment place 16.

成膜源22が成膜場所15と対面する場所を通過すると、成膜場所15上に位置する成膜対象物5aには、所定膜厚の薄膜が形成される。次いで、図5(g)に示されたように、回転装置21を回転させ、図5(h)に示されたように、マスク4bと、マスク4bに対して位置合わせがされた未成膜の成膜対象物5bとを固定して成膜場所15に回転移動させると共に、薄膜が形成された成膜対象物5aをマスク5aと共にアラインメント場所16に移動させ、保持装置47aを解除し、基板移動装置27によって薄膜が形成された成膜対象物5aをマスク4aと離間させた後、基板搬出入装置25によって、成膜対象物5aを搬送室12に移動させた後、搬送室12の内部から搬出する。   When the film forming source 22 passes through the place facing the film forming place 15, a thin film having a predetermined film thickness is formed on the film forming target 5 a located on the film forming place 15. Next, as shown in FIG. 5 (g), the rotating device 21 is rotated, and as shown in FIG. 5 (h), the mask 4b is aligned with the mask 4b. The film forming object 5b is fixed and rotated to the film forming place 15, the film forming object 5a on which the thin film is formed is moved to the alignment place 16 together with the mask 5a, the holding device 47a is released, and the substrate is moved. After the film formation target 5a on which the thin film is formed by the apparatus 27 is separated from the mask 4a, the film formation target 5a is moved to the transfer chamber 12 by the substrate carry-in / out device 25, and then from the inside of the transfer chamber 12. Take it out.

図5(i)には、搬出後の状態が示されている。搬出された成膜対象物5aは、他の真空室14内に搬入される。成膜対象物5aと離間されたマスク4aは搬出されず、基板ホルダ34a上に残る。   FIG. 5 (i) shows a state after carrying out. The film formation target 5 a that has been carried out is carried into another vacuum chamber 14. The mask 4a separated from the film formation target 5a is not carried out and remains on the substrate holder 34a.

以上説明した様に、未成膜の成膜対象物5a、5bが、アラインメント場所16上から成膜場所15上に回転移動するときには、成膜源22は、成膜場所15と対面する場所以外の場所に位置させておき、成膜対象物5a、5bが成膜場所15上で静止した後、成膜源22が微粒子を放出しながら移動を開始すると、成膜場所15上の成膜対象物5a、5bのマスク4a、4bの窓部が位置する部分に薄膜が形成される。   As described above, when the undeposited film formation objects 5a and 5b are rotationally moved from the alignment place 16 to the film formation place 15, the film formation source 22 is a place other than the place facing the film formation place 15. When the film forming source 22 starts moving while releasing the fine particles after the film forming objects 5a and 5b are stationary on the film forming place 15, the film forming objects on the film forming place 15 are placed. A thin film is formed in the portion where the windows of the masks 4a and 4b of 5a and 5b are located.

成膜場所15で成膜対象物5a(又は5b)に薄膜を形成しているときに、アラインメント場所16では、未成膜の成膜対象物5b(又は5a)を基板移動装置27上に配置し、マスク4b(又は4a)に対する位置合わせを行うことができる。   When a thin film is formed on the film formation target 5a (or 5b) at the film formation place 15, the film formation target 5b (or 5a) that has not been formed is placed on the substrate moving device 27 at the alignment place 16. The alignment with respect to the mask 4b (or 4a) can be performed.

なお、回転装置21が回転するときに、成膜源22から放出される微粒子が、回転する成膜対象物5a、5bの表面に到達しないように、又、微粒子が回転装置21の成膜場所15に位置する部分以外の部分に微粒子が到達しないように、微粒子を遮蔽する防着板を設けることができる。   It should be noted that when the rotating device 21 rotates, the fine particles emitted from the film forming source 22 do not reach the surface of the rotating film forming objects 5a and 5b, and the fine particles are deposited on the rotating device 21. An adhesion preventing plate for shielding fine particles can be provided so that the fine particles do not reach the portion other than the portion located at 15.

また、上記例では、アラインメント場所16上でのマスク4a、4bと、成膜対象物5a、5bとの間の位置合わせを行ったが、マスク4a、4bを基板ホルダ34a、34bに配置せずに成膜対象物5a、5bを基板ホルダ34a、34bに配置して成膜工程を行うことができ、その場合は、基板ホルダ34a、34bにアラインメントマークを形成しておき、位置合わせ工程では、マスクのアラインメントマークに替え、基板ホルダ34a、34bのアラインメントマークを用い、基板ホルダ34a、34bと、基板ホルダ34a、34bに対面する成膜対象物5a、5bとの間の第一の位置誤差を主撮像装置35と主制御装置36とによって求めて、成膜対象物5a、5bと基板ホルダ34a、34bとの間の位置合わせ工程を行い、第一の位置誤差が第一の基準値以下になったところで、成膜対象物5a、5bを基板ホルダ34a、34b上に配置し、保持装置47a、47bによって成膜対象物5a、5bを基板ホルダ34a、34bに固定し、回転装置21を回転させてアラインメント場所16から成膜場所15に回転移動させて、成膜場所15で静止させて補助撮像装置45によって成膜対象物5a、5bのアラインメントマークと基板ホルダ34a、34bのアラインメントマークとを撮像し、第二の位置誤差を求め、第二の基準値と比較し、第二の位置誤差が第二の基準値以下の場合は成膜工程を開始し、第二の基準値よりも大きい場合は、成膜対象物5a、5bを成膜場所15からアラインメント場所16に戻し、再度位置合わせ工程を行うことができる。   In the above example, the alignment between the masks 4a and 4b on the alignment place 16 and the film formation targets 5a and 5b is performed, but the masks 4a and 4b are not arranged on the substrate holders 34a and 34b. The film forming objects 5a and 5b can be placed on the substrate holders 34a and 34b to perform the film forming process. In this case, alignment marks are formed on the substrate holders 34a and 34b, Instead of the alignment mark of the mask, the alignment mark of the substrate holders 34a and 34b is used, and the first positional error between the substrate holders 34a and 34b and the film formation targets 5a and 5b facing the substrate holders 34a and 34b is determined. Obtained by the main imaging device 35 and the main control device 36, an alignment process between the film formation targets 5a and 5b and the substrate holders 34a and 34b is performed, When one position error becomes equal to or less than the first reference value, the film formation objects 5a and 5b are placed on the substrate holders 34a and 34b, and the film formation objects 5a and 5b are placed on the substrate holder by the holding devices 47a and 47b. 34a and 34b, the rotating device 21 is rotated to rotate from the alignment place 16 to the film forming place 15, and is stationary at the film forming place 15 and is aligned by the auxiliary imaging device 45 with the film forming objects 5a and 5b. The mark and the alignment marks of the substrate holders 34a and 34b are imaged, the second position error is obtained, compared with the second reference value, and when the second position error is less than or equal to the second reference value, the film forming process Is started and the film formation objects 5a and 5b are returned from the film formation place 15 to the alignment place 16 and the alignment process can be performed again.

また、上記各例では、アラインメント場所16に位置するマスク4a、4b又は回転装置21に対し、基板移動装置27に乗せた成膜対象物5a、5bを移動させて、第一の位置誤差を小さくしていたが、基板搬出入装置25上に成膜対象物5a、5bを載せた状態で、基板搬出入装置25を移動させてアラインメント場所16に位置するマスク4a、4b又は回転装置21との間の第一の位置誤差を小さくした後、成膜対象物5a、5bをアラインメント場所16上のマスク4a、4b上又は基板ホルダ34a、34b上に配置するようにしてもよい。   In each of the above examples, the first position error is reduced by moving the deposition objects 5a and 5b placed on the substrate moving device 27 with respect to the masks 4a and 4b or the rotating device 21 located at the alignment place 16. However, with the deposition objects 5 a and 5 b placed on the substrate carry-in / out device 25, the substrate carry-in / out device 25 is moved and the mask 4 a, 4 b or the rotation device 21 located at the alignment place 16 is moved. After the first positional error is reduced, the film formation objects 5a and 5b may be arranged on the masks 4a and 4b on the alignment place 16 or on the substrate holders 34a and 34b.

以上説明した様に、成膜場所15で成膜し、アラインメント場所16で位置合わせを行う場合は、アラインメント場所16に主撮像装置35を配置して、成膜対象物5a、5bとマスク4a、4bとのアラインメントマークを撮像し、この結果をもって主制御装置36によりアラインメント作業を行い、さらに、回転して成膜場所15に移動された成膜対象物5a、5bとマスク4a、4b又は回転装置21との間の第二の位置誤差を補助撮像装置45によって確認し、第二の位置誤差が第二の基準値よりも大きい場合は、位置合わせをやり直すことができる。   As described above, when film formation is performed at the film formation location 15 and alignment is performed at the alignment location 16, the main imaging device 35 is disposed at the alignment location 16, and the film formation targets 5 a and 5 b and the mask 4 a, The alignment mark with respect to 4b is imaged, and the alignment operation is performed by the main controller 36 based on this result, and the film forming objects 5a and 5b and the masks 4a and 4b or the rotating device rotated and moved to the film forming place 15 21 is confirmed by the auxiliary imaging device 45, and when the second position error is larger than the second reference value, alignment can be performed again.

また、第一の位置誤差が大きい場合には、回転装置21の回転速度を遅くするなどの調整を主制御装置36で行い、回転時に発生する成膜対象物5a、5bとマスク4a、4bとの間の相対位置の変化を小さくすることができる。   When the first position error is large, adjustment such as slowing down the rotation speed of the rotation device 21 is performed by the main control device 36, and the film formation targets 5a and 5b and the masks 4a and 4b generated during the rotation The change in the relative position between the two can be reduced.

また、成膜対象物5a、5bの第二の位置誤差が大きい場合でも、成膜工程を開始し、次に位置合わせが行われた成膜対象物5a、5bを成膜場所15に移動させる際に、回転速度を遅くし、アラインメント場所16から成膜場所15に回転移動された成膜対象物5a、5bとマスク4a、4bとの間の相対位置の変化を小さくすることができる。   Even when the second position error of the film formation objects 5a and 5b is large, the film formation process is started, and the film formation objects 5a and 5b that have been aligned next are moved to the film formation place 15. In this case, the rotational speed can be reduced, and the change in the relative position between the deposition objects 5a and 5b and the masks 4a and 4b that have been rotated from the alignment place 16 to the deposition place 15 can be reduced.

なお、成膜場所15では、第二の位置誤差を小さくするように、成膜対象物5a、5bとマスク4a、4bの間、又は、成膜対象物5a、5bと回転装置21との間との相対位置を変更することはできないようになっている。   In addition, in the film-forming place 15, between the film-forming objects 5a and 5b and the masks 4a and 4b or between the film-forming objects 5a and 5b and the rotating device 21 so as to reduce the second position error. The relative position cannot be changed.

なお、上記実施例では、主制御装置36とは別に、補助制御装置46を設けたが、主制御装置36の動作と補助制御装置46の動作とを一台の制御装置で行うようにしてもよく、また、主制御装置36と補助制御装置46とを、一台の制御装置とみなすようにしても良い。
上記成膜材料は、有機化合物であったが、成膜源22は、無機化合物の粒子を放出するようにしてもよい。
In the above embodiment, the auxiliary control device 46 is provided separately from the main control device 36, but the operation of the main control device 36 and the operation of the auxiliary control device 46 may be performed by a single control device. In addition, the main control device 36 and the auxiliary control device 46 may be regarded as a single control device.
Although the film forming material is an organic compound, the film forming source 22 may emit inorganic compound particles.

なお、上記例では、第一、第二の位置誤差は、正の数であり、第一の位置誤差が第一の基準値以下のときに、位置合わせがされたものとしたが、第一の位置誤差が第一の基準値よりも小さい時に位置合わせがされたものとしても良い。
また、上記例では、第二の位置誤差が第二の基準値以下の時に成膜工程を開始したが、第二の位置誤差が第二の基準値未満の時に成膜工程を開始するようにしてもよい。
また、第一の基準値と第二の基準値とを同じ数にしたが、回転によって発生する微少な位置誤差を許容する場合は、第二の基準値を第一の基準値よりも大きくしても良い。
また、本発明は補助撮像装置を有さない発明も含まれる。
In the above example, the first and second position errors are positive numbers. When the first position error is equal to or less than the first reference value, the alignment is performed. Alignment may be performed when the position error is smaller than the first reference value.
In the above example, the film forming process is started when the second position error is less than or equal to the second reference value. However, the film forming process is started when the second position error is less than the second reference value. May be.
The first reference value and the second reference value are set to the same number, but if a slight position error caused by rotation is allowed, the second reference value is made larger than the first reference value. May be.
The invention also includes an invention that does not have an auxiliary imaging device.

4a、4b……マスク
5a、5b……成膜対象物
10……薄膜形成装置
15……成膜場所
16……アラインメント場所
21……回転装置(ターンテーブル)
22……成膜源
25……基板搬出入装置
27……基板移動装置
31……成膜源移動装置
33……回転中心
34a、34b……基板ホルダ
35……主撮像装置
36……主制御装置
45……補助撮像装置
46……補助制御装置
48……駆動装置
4a, 4b: Mask 5a, 5b: Deposition target 10: Thin film forming apparatus 15: Deposition place 16: Alignment place 21: Rotating device (turn table)
22 …… Deposition source 25 …… Substrate carry-in / out device 27 …… Substrate moving device 31 …… Deposition source moving device 33 …… Rotation center 34a, 34b …… Substrate holder 35 …… Main imaging device 36 …… Main control Device 45 …… Auxiliary imaging device 46 …… Auxiliary control device 48 …… Drive device

Claims (13)

成膜室と、
前記成膜室内に配置され、マスクと成膜対象物とが配置される複数の基板ホルダが設けられ、前記成膜室内で回転する回転装置と、
アラインメント場所に位置する前記基板ホルダに配置された前記マスクと、前記マスクと対面する前記成膜対象物とを撮像する主撮像装置と、
前記主撮像装置の撮像結果から、前記マスクと前記成膜対象物との間の第一の位置誤差を求め、前記第一の位置誤差を小さくするように、前記成膜対象物を移動させ、位置合わせがされた状態で前記マスクに前記成膜対象物を配置する制御装置と、
前記成膜室の内部に配置され、成膜材料の微粒子を放出する成膜源と、
前記成膜源を前記成膜室の内部で移動させ、成膜場所と対面する場所を通過させる成膜源移動装置と、
を有し、
前記回転装置の回転によって、位置合わせがされた前記マスクと前記成膜対象物とが前記アラインメント場所から前記成膜場所に移動され、前記成膜源が前記微粒子を放出しながら前記成膜場所と対面する場所を通過して、前記微粒子が、前記基板ホルダの貫通孔と前記マスクの窓部とを通過して前記成膜対象物に到達し、薄膜が形成される薄膜形成装置。
A deposition chamber;
A plurality of substrate holders disposed in the film formation chamber, in which a mask and a film formation target are disposed, and a rotating device that rotates in the film formation chamber;
A main imaging device that images the mask placed on the substrate holder located at an alignment location and the film formation target facing the mask;
From the imaging result of the main imaging device, the first position error between the mask and the film formation object is obtained, and the film formation object is moved so as to reduce the first position error, A control device that arranges the film formation target on the mask in a state of being aligned;
A film forming source disposed inside the film forming chamber and releasing fine particles of the film forming material;
A film forming source moving device for moving the film forming source inside the film forming chamber and passing a place facing the film forming place;
Have
By the rotation of the rotating device, the aligned mask and the deposition target are moved from the alignment location to the deposition location, and the deposition source emits the fine particles and the deposition location. A thin film forming apparatus in which a thin film is formed by passing through a facing surface and passing through the through hole of the substrate holder and the window of the mask to reach the film formation target.
前記成膜場所に位置する前記マスクと前記成膜対象物とを撮像する補助撮像装置が設けられ、
前記補助撮像装置が撮像した結果から、前記成膜対象物と前記マスクとの間の第二の位置誤差が求められる請求項1記載の薄膜形成装置。
An auxiliary imaging device for imaging the mask located at the film formation location and the film formation target is provided;
The thin film forming apparatus according to claim 1, wherein a second position error between the film formation target and the mask is obtained from a result of imaging by the auxiliary imaging apparatus.
前記マスクと、前記マスク上に配置された前記成膜対象物とを前記回転装置に固定する保持装置を有する請求項1記載の薄膜形成装置。   The thin film forming apparatus according to claim 1, further comprising a holding device that fixes the mask and the film formation target disposed on the mask to the rotating device. 前記マスクと、前記マスク上に配置された前記成膜対象物とを前記回転装置に固定する保持装置を有する請求項2記載の薄膜形成装置。   The thin film forming apparatus according to claim 2, further comprising: a holding device that fixes the mask and the film formation target disposed on the mask to the rotating device. 前記第二の位置誤差が第二の基準値と比較され、前記第二の位置誤差が前記第二の基準値より大きい場合には、前記成膜対象物は、前記薄膜が形成されずに、前記回転装置の回転によって、前記マスクと共に前記アラインメント場所に戻される請求項2記載の薄膜形成装置。   When the second position error is compared with a second reference value and the second position error is greater than the second reference value, the film formation target is not formed with the thin film, The thin film forming apparatus according to claim 2, wherein the thin film forming apparatus is returned to the alignment place together with the mask by rotation of the rotating apparatus. 前記第二の位置誤差が第二の基準値と比較され、前記第二の位置誤差が前記第二の基準値より大きい場合には、前記成膜対象物は、前記薄膜が形成されずに、前記回転装置の回転によって、前記マスクと共に前記アラインメント場所に戻される請求項4記載の薄膜形成装置。   When the second position error is compared with a second reference value and the second position error is greater than the second reference value, the film formation target is not formed with the thin film, The thin film forming apparatus according to claim 4, wherein the thin film forming apparatus is returned to the alignment place together with the mask by rotation of the rotating apparatus. 成膜室と、
前記成膜室内に配置され、成膜対象物が配置される複数の基板ホルダが設けられ、前記成膜室内で回転する回転装置と、
アラインメント場所に位置する前記基板ホルダと、前記基板ホルダに対面する成膜対象物とを撮像する主撮像装置と、
前記主撮像装置の撮像結果から、前記基板ホルダと前記成膜対象物との間の第一の位置誤差を求め、前記第一の位置誤差を小さくするように、前記成膜対象物を移動させ、位置合わせがされた状態で前記基板ホルダに前記成膜対象物を配置する制御装置と、
前記成膜室の内部に配置され、成膜材料の微粒子を放出する成膜源と、
前記成膜源を前記成膜室の内部で移動させ、成膜場所と対面する場所を通過させる成膜源移動装置と、
を有し、
前記回転装置の回転によって、位置合わせがされた前記基板ホルダと前記成膜対象物とが前記アラインメント場所から前記成膜場所に移動され、前記成膜源が前記微粒子を放出しながら前記成膜場所と対面する場所を通過して、前記微粒子が、前記基板ホルダの貫通孔を通過して前記成膜対象物に到達し、薄膜が形成される薄膜形成装置。
A deposition chamber;
A rotating device that is arranged in the film forming chamber and is provided with a plurality of substrate holders on which film forming objects are arranged, and rotates in the film forming chamber;
A main imaging device that images the substrate holder located at an alignment place and a film formation target facing the substrate holder;
From the imaging result of the main imaging device, a first position error between the substrate holder and the film formation target is obtained, and the film formation target is moved so as to reduce the first position error. A control device that arranges the film formation target on the substrate holder in a state of being aligned;
A film forming source disposed inside the film forming chamber and releasing fine particles of the film forming material;
A film forming source moving device for moving the film forming source inside the film forming chamber and passing a place facing the film forming place;
Have
By the rotation of the rotating device, the aligned substrate holder and the deposition target are moved from the alignment location to the deposition location, and the deposition source releases the fine particles while the deposition location is released. A thin film forming apparatus in which the fine particles pass through a through hole of the substrate holder and reach the film formation target object by passing through a place facing the film.
前記成膜場所に位置する前記基板ホルダと前記成膜対象物とを撮像する補助撮像装置が設けられ、
前記補助撮像装置が撮像した結果から、前記成膜対象物と前記マスクとの間の第二の位置誤差が求められる請求項7記載の薄膜形成装置。
An auxiliary imaging device for imaging the substrate holder located at the film formation location and the film formation target is provided;
The thin film forming apparatus according to claim 7, wherein a second position error between the film formation target and the mask is obtained from a result of imaging by the auxiliary imaging apparatus.
前記基板ホルダと、前記基板ホルダ上に配置された前記成膜対象物とを前記回転装置に固定する保持装置を有する請求項7記載の薄膜形成装置。   The thin film forming apparatus according to claim 7, further comprising a holding device that fixes the substrate holder and the film formation target disposed on the substrate holder to the rotating device. 前記基板ホルダと、前記基板ホルダ上に配置された前記成膜対象物とを前記回転装置に固定する保持装置を有する請求項8記載の薄膜形成装置。   The thin film forming apparatus according to claim 8, further comprising a holding device configured to fix the substrate holder and the film formation target disposed on the substrate holder to the rotating device. 前記第二の位置誤差が第二の基準値と比較され、前記第二の位置誤差が前記第二の基準値より大きい場合には、前記成膜対象物は、前記薄膜が形成されずに、前記回転装置の回転によって、前記アラインメント場所に戻される請求項8記載の薄膜形成装置。   When the second position error is compared with a second reference value and the second position error is greater than the second reference value, the film formation target is not formed with the thin film, The thin film forming apparatus according to claim 8, wherein the thin film forming apparatus is returned to the alignment place by rotation of the rotating device. 前記第二の位置誤差が第二の基準値と比較され、前記第二の位置誤差が前記第二の基準値より大きい場合には、前記成膜対象物は、前記薄膜が形成されずに、前記回転装置の回転によって、前記アラインメント場所に戻される請求項10記載の薄膜形成装置。   When the second position error is compared with a second reference value and the second position error is greater than the second reference value, the film formation target is not formed with the thin film, The thin film forming apparatus according to claim 10, wherein the thin film forming apparatus is returned to the alignment place by rotation of the rotating device. 前記基板ホルダは二台設けられ、前記回転装置の回転中心を中心として、二台の前記基板ホルダは互いに反対側に設けられた請求項1乃至請求項12のいずれか1項記載の薄膜形成装置。   The thin film forming apparatus according to any one of claims 1 to 12, wherein two substrate holders are provided, and the two substrate holders are provided on opposite sides of each other with a rotation center of the rotating device as a center. .
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