JPWO2016046939A1 - イオン注入装置 - Google Patents
イオン注入装置 Download PDFInfo
- Publication number
- JPWO2016046939A1 JPWO2016046939A1 JP2016549842A JP2016549842A JPWO2016046939A1 JP WO2016046939 A1 JPWO2016046939 A1 JP WO2016046939A1 JP 2016549842 A JP2016549842 A JP 2016549842A JP 2016549842 A JP2016549842 A JP 2016549842A JP WO2016046939 A1 JPWO2016046939 A1 JP WO2016046939A1
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- Prior art keywords
- solid
- filling container
- vacuum
- vacuum partition
- thermal conductivity
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Links
- 239000007787 solid Substances 0.000 claims abstract description 48
- 238000005192 partition Methods 0.000 claims abstract description 33
- 238000005468 ion implantation Methods 0.000 claims abstract description 19
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 11
- 239000011343 solid material Substances 0.000 claims abstract description 11
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229920006351 engineering plastic Polymers 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 abstract description 10
- 230000008022 sublimation Effects 0.000 abstract description 10
- 230000006641 stabilisation Effects 0.000 abstract description 7
- 238000011105 stabilization Methods 0.000 abstract description 7
- 238000004904 shortening Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 26
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 5
- 239000006200 vaporizer Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
図1は、本発明の実施の形態1に係るイオン注入装置を示す断面図である。この装置はSiCウエハ(図示せず)にアルミイオンを注入するSiC半導体装置用イオン注入装置である。
図3は、本発明の実施の形態2に係るイオン注入装置を示す断面図である。底板13が固体充填容器3に接合されている。支持具4は底板13を真空隔壁1に支持固定する。底板13は真空隔壁1及び固体充填容器3に比べて熱伝導性が低い。
Claims (4)
- 内部が真空に保たれた真空隔壁と、
前記真空隔壁の内部に全体が配置され、固体材料が充填された固体充填容器と、
前記固体充填容器に充填された前記固体材料を昇華させて原料ガスを生成するヒーターと、
前記原料ガスをイオン化してイオンビームとして出射するアークチャンバーと、
前記固体充填容器から前記アークチャンバーに前記原料ガスを導くガス供給ノズルと、
前記固体充填容器を前記真空隔壁に支持固定する支持具とを備え、
前記支持具は前記真空隔壁及び前記固体充填容器に比べて熱伝導性が低いことを特徴とするイオン注入装置。 - 前記支持具は、熱伝導率2W/m・k以下のマシナブルセラミック材料、又は、熱伝導率1W/m・k以下のエンジニアリングプラスチックであることを特徴とする請求項1に記載のイオン注入装置。
- 前記固体充填容器に接合された底板を更に備え、
前記支持具は前記底板を前記真空隔壁に支持固定し、
前記底板は前記真空隔壁及び前記固体充填容器に比べて熱伝導性が低いことを特徴とする請求項1又は2に記載のイオン注入装置。 - 前記底板は、熱伝導率2W/m・k以下のマシナブルセラミック材料、又は、熱伝導率1W/m・k以下のエンジニアリングプラスチックであることを特徴とする請求項3に記載のイオン注入装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/075454 WO2016046939A1 (ja) | 2014-09-25 | 2014-09-25 | イオン注入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016046939A1 true JPWO2016046939A1 (ja) | 2017-04-27 |
JP6292310B2 JP6292310B2 (ja) | 2018-03-14 |
Family
ID=55580499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016549842A Active JP6292310B2 (ja) | 2014-09-25 | 2014-09-25 | イオン注入装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10043635B2 (ja) |
JP (1) | JP6292310B2 (ja) |
CN (1) | CN107078005B (ja) |
DE (1) | DE112014006989B4 (ja) |
WO (1) | WO2016046939A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7182073B2 (ja) | 2018-11-02 | 2022-12-02 | 中国電力株式会社 | 工事用開閉器用のケーブル仮置き具 |
JP7256711B2 (ja) | 2019-07-16 | 2023-04-12 | 住友重機械イオンテクノロジー株式会社 | イオン生成装置およびイオン注入装置 |
US20220013323A1 (en) * | 2020-07-10 | 2022-01-13 | Axcelis Technologies, Inc. | Hydrogen co-gas when using a chlorine-based ion source material |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6410946U (ja) * | 1987-07-09 | 1989-01-20 | ||
JPS6412363U (ja) * | 1987-07-11 | 1989-01-23 | ||
JPH0195454A (ja) * | 1987-10-07 | 1989-04-13 | Oki Electric Ind Co Ltd | 高ドーズイオン注入装置 |
JP2001011607A (ja) * | 1999-06-28 | 2001-01-16 | Sumitomo Heavy Ind Ltd | 成膜装置及び方法 |
JP2001262320A (ja) * | 2000-03-23 | 2001-09-26 | Japan Atom Energy Res Inst | 表面加熱蒸発方法 |
JP2001291589A (ja) * | 2000-03-03 | 2001-10-19 | Eastman Kodak Co | 熱物理蒸着源 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4393333A (en) * | 1979-12-10 | 1983-07-12 | Hitachi, Ltd. | Microwave plasma ion source |
US5138973A (en) * | 1987-07-16 | 1992-08-18 | Texas Instruments Incorporated | Wafer processing apparatus having independently controllable energy sources |
US4791261A (en) | 1987-09-23 | 1988-12-13 | International Business Machines Corporation | Crucible for evaporation of metallic film |
US5306921A (en) * | 1992-03-02 | 1994-04-26 | Tokyo Electron Limited | Ion implantation system using optimum magnetic field for concentrating ions |
JP2572726B2 (ja) | 1995-01-13 | 1997-01-16 | 株式会社日立製作所 | 蒸発炉付イオン源を用いた半導体装置の製造方法 |
JP3498405B2 (ja) | 1995-02-15 | 2004-02-16 | 日新電機株式会社 | イオン源 |
US6432256B1 (en) * | 1999-02-25 | 2002-08-13 | Applied Materials, Inc. | Implanatation process for improving ceramic resistance to corrosion |
WO2004005216A1 (ja) * | 2002-07-09 | 2004-01-15 | Kenichiro Miyahara | 薄膜形成用基板、薄膜基板、光導波路、発光素子、及び発光素子搭載用基板 |
US6710360B2 (en) * | 2002-07-10 | 2004-03-23 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
US6774373B2 (en) * | 2002-07-29 | 2004-08-10 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
JP4765328B2 (ja) * | 2004-04-16 | 2011-09-07 | 東京エレクトロン株式会社 | 被処理体の処理装置 |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US9607719B2 (en) * | 2005-03-07 | 2017-03-28 | The Regents Of The University Of California | Vacuum chamber for plasma electric generation system |
US8031824B2 (en) * | 2005-03-07 | 2011-10-04 | Regents Of The University Of California | Inductive plasma source for plasma electric generation system |
CN101473073B (zh) * | 2006-04-26 | 2012-08-08 | 高级技术材料公司 | 半导体加工系统的清洁 |
WO2008063254A2 (en) * | 2006-08-18 | 2008-05-29 | Unified Gravity Corporation | Hydrogen-lithium fusion device, method and applications |
JP4428467B1 (ja) * | 2008-08-27 | 2010-03-10 | 日新イオン機器株式会社 | イオン源 |
US8367531B1 (en) * | 2010-03-23 | 2013-02-05 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Aluminum implant using new compounds |
US8183542B2 (en) * | 2010-04-05 | 2012-05-22 | Varion Semiconductor Equipment Associates, Inc. | Temperature controlled ion source |
US20120241648A1 (en) * | 2011-03-24 | 2012-09-27 | Varian Semiconductor Equipment Associates, Inc. | Heat lip seal for cryogenic processing |
KR102227672B1 (ko) * | 2014-12-31 | 2021-03-16 | 코오롱인더스트리 주식회사 | 폴리아마이드-이미드 전구체, 폴리아마이드-이미드 필름 및 이를 포함하는 표시소자 |
-
2014
- 2014-09-25 WO PCT/JP2014/075454 patent/WO2016046939A1/ja active Application Filing
- 2014-09-25 JP JP2016549842A patent/JP6292310B2/ja active Active
- 2014-09-25 CN CN201480082170.7A patent/CN107078005B/zh active Active
- 2014-09-25 US US15/320,104 patent/US10043635B2/en active Active
- 2014-09-25 DE DE112014006989.2T patent/DE112014006989B4/de active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6410946U (ja) * | 1987-07-09 | 1989-01-20 | ||
JPS6412363U (ja) * | 1987-07-11 | 1989-01-23 | ||
JPH0195454A (ja) * | 1987-10-07 | 1989-04-13 | Oki Electric Ind Co Ltd | 高ドーズイオン注入装置 |
JP2001011607A (ja) * | 1999-06-28 | 2001-01-16 | Sumitomo Heavy Ind Ltd | 成膜装置及び方法 |
JP2001291589A (ja) * | 2000-03-03 | 2001-10-19 | Eastman Kodak Co | 熱物理蒸着源 |
JP2001262320A (ja) * | 2000-03-23 | 2001-09-26 | Japan Atom Energy Res Inst | 表面加熱蒸発方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6292310B2 (ja) | 2018-03-14 |
DE112014006989T5 (de) | 2017-06-14 |
CN107078005B (zh) | 2019-01-04 |
US20170133201A1 (en) | 2017-05-11 |
US10043635B2 (en) | 2018-08-07 |
DE112014006989B4 (de) | 2022-12-22 |
WO2016046939A1 (ja) | 2016-03-31 |
CN107078005A (zh) | 2017-08-18 |
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