JPWO2015199121A1 - 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 - Google Patents
酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 Download PDFInfo
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- JPWO2015199121A1 JPWO2015199121A1 JP2016529623A JP2016529623A JPWO2015199121A1 JP WO2015199121 A1 JPWO2015199121 A1 JP WO2015199121A1 JP 2016529623 A JP2016529623 A JP 2016529623A JP 2016529623 A JP2016529623 A JP 2016529623A JP WO2015199121 A1 JPWO2015199121 A1 JP WO2015199121A1
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- oxide
- sintered body
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000005477 sputtering target Methods 0.000 title claims abstract description 19
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 61
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052738 indium Inorganic materials 0.000 claims abstract description 38
- 238000004544 sputter deposition Methods 0.000 claims abstract description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011575 calcium Substances 0.000 claims abstract description 16
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 11
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 8
- 239000010941 cobalt Substances 0.000 claims abstract description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 8
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000002441 X-ray diffraction Methods 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 126
- 239000010408 film Substances 0.000 description 34
- 239000000843 powder Substances 0.000 description 34
- 238000005245 sintering Methods 0.000 description 31
- 229910052760 oxygen Inorganic materials 0.000 description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 239000002994 raw material Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910003437 indium oxide Inorganic materials 0.000 description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004993 emission spectroscopy Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- IUYLTEAJCNAMJK-UHFFFAOYSA-N cobalt(2+);oxygen(2-) Chemical compound [O-2].[Co+2] IUYLTEAJCNAMJK-UHFFFAOYSA-N 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 argon and oxygen Chemical compound 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
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- C04B35/62625—Wet mixtures
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- C04B35/64—Burning or sintering processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Abstract
Description
100×I[GaInO3相(111)]/{I[In2O3相(400)]+I[GaInO3相(111)]} [%]・・・・式1
本発明の酸化物焼結体は、ビックスバイト型構造のIn2O3相と、In2O3相以外の生成相としてβ−Ga2O3型構造のGaInO3相、あるいはβ−Ga2O3型構造のGaInO3相と(Ga,In)2O3相によって構成されることが好ましい。酸化物焼結体がIn2O3相のみによって構成されると、前記正二価元素Mの含有に関係なく、例えば特許文献3(WO2003/014409号公報)の比較例11と同様にノジュールが発生する。一方、前記のNiGa2O4相、CoGa2O4相、CaGa4O7相、Ca5Ga6O14相、SrGa12O19相、SrGa2O4相、Sr3Ga2O6相、Ga2PbO4相、又はこれらの複合酸化物相は、In2O3相やGaInO3相と比較して電気抵抗値が高いため、スパッタリング成膜で掘れ残りやすくノジュールが発生しやすい。また、これらの相が生成した酸化物焼結体を用いてスパッタリング成膜された酸化物半導体薄膜は、キャリア移動度が低くなる傾向にある。
(式中、I[In2O3相(400)]は、ビックスバイト型構造のIn2O3相の(400)ピーク強度であり、I[GaInO3相(111)]は、β−Ga2O3型構造の複合酸化物β−GaInO3相(111)ピーク強度を示す。)
本発明の酸化物焼結体は、酸化インジウム粉末と酸化ガリウム粉末からなる酸化物粉末、ならびに前記正二価元素Mの酸化物粉末を原料粉末とする。
本発明のターゲットは、上記酸化物焼結体を所定の大きさに切断、表面を研磨加工し、バッキングプレートに接着して得ることができる。ターゲット形状は、平板形が好ましいが、円筒形でもよい。円筒形ターゲットを用いる場合には、ターゲット回転によるパーティクル発生を抑制することが好ましい。
本発明の非晶質の酸化物半導体薄膜は、前記のスパッタリング用ターゲットを用いて、スパッタリング法で基板上に一旦非晶質の薄膜を形成し、次いで熱処理を施すことによって得られる。
得られた酸化物焼結体の金属元素の組成をICP発光分光法によって調べた。得られた酸化物焼結体の端材を用いて、X線回折装置(フィリップス製)を用いて粉末法による生成相の同定を行った。
得られた酸化物薄膜の組成をICP発光分光法によって調べた。酸化物薄膜の膜厚は表面粗さ計(テンコール社製)で測定した。成膜速度は、膜厚と成膜時間から算出した。酸化物薄膜のキャリア濃度および移動度は、ホール効果測定装置(東陽テクニカ製)によって求めた。膜の生成相はX線回折測定によって同定した。
(焼結体の作製および評価)
酸化インジウム粉末と酸化ガリウム粉末、ならびに正二価元素Mとして酸化ニッケル粉末を平均粒径1.5μm以下となるよう調整して原料粉末とした。これらの原料粉末を、表1の実施例及び比較例のGa/(In+Ga)原子数比、M/(In+Ga+M)原子数比の通りになるように調合し、水とともに樹脂製ポットに入れ、湿式ボールミルで混合した。この際、硬質ZrO2ボールを用い、混合時間を18時間とした。混合後、スラリーを取り出し、濾過、乾燥、造粒した。造粒物を、冷間静水圧プレスで3ton/cm2の圧力をかけて成形した。
前記正二価元素Mとして酸化コバルト(II)、酸化カルシウム(II)、酸化ストロンチウム(II)、酸化鉛(II)を用いたこと以外、正二価元素MがNiの場合と同様に酸化物焼結体の作製を行い、組成分析、相同定を行い、β−Ga2O3型構造のGaInO3相のX線回折ピーク強度比を算出した。その結果を、酸化コバルト(II)を用いた場合を表2に、酸化カルシウム(II)を用いた場合を表3に、酸化ストロンチウム(II)を用いた場合を表4に酸化鉛(II)を用いた場合を表5に示した。なお、組成分析において、金属元素について、原料粉末の配合時の仕込み組成とほぼ同じであることがいずれの実施例でも確認された。
各実施例及び比較例では基板温度200℃で直流スパッタリングによる成膜を行った。アーキング抑制機能のない直流電源を装備した直流マグネトロンスパッタリング装置(トッキ製)のカソードに、上記スパッタリングターゲットを取り付けた。このときターゲット−基板(ホルダー)間距離を60mmに固定した。1×10−4Pa以下まで真空排気後、アルゴンと酸素の混合ガスを各ターゲットのガリウム量に応じて適当な酸素の比率になるように導入し、ガス圧を0.6Paに調整した。直流電力300W(1.64W/cm2)を印加して直流プラズマを発生させた。10分間のプリスパッタリング後、スパッタリングターゲットの直上、すなわち静止対向位置に基板を配置して、膜厚50nmの酸化物薄膜を形成した。得られた酸化物薄膜の組成は、ターゲットとほぼ同じであることが確認された。また、X線回折測定の結果、非晶質であることが確認された。得られた非晶質の酸化物薄膜には、RTA(Rapid Thermal Annealing)装置を用いて、酸化雰囲気中、250〜600℃において30分間以内の熱処理を施した。熱処理後の酸化物薄膜は、X線回折測定の結果、非晶質であることが確認された。得られた非晶質の酸化物半導体薄膜のホール効果測定を行い、キャリア濃度および移動度を求めた。得られた評価結果を、表6〜表10にまとめて記載した。
実施例2、10、14及び比較例3、6のスパッタリング用ターゲットについて、量産を模擬したスパッタリング成膜によるノジュール発生の評価を実施した。スパッタリング装置は、アーキング抑制機能のない直流電源を装備したロードロック式通過型マグネトロンスパッタリング装置(アルバック製)を用いた。ターゲットは、縦5インチ、横15インチの角型のターゲットを用いた。スパッタリング成膜評価スパッタ室を7×10−5Pa以下まで真空排気後、アルゴンと酸素の混合ガスを各ターゲットのガリウム量に応じて適当な酸素の比率になるように導入し、ガス圧を0.6Paに調整した。このような条件のスパッタリングガスを選択した理由は、スパッタ室の真空度が1×10−4Paを超えてチャンバー内の水分圧が高い、あるいは水素ガスが添加される場合には、正当な評価ができなくなるためである。ITOなどでよく知られるように膜中に水分や水素ガス由来のH+が取り込まれると膜の結晶化温度が高くなり、ターゲット非エロージョン部に付着する膜が非晶質化し易くなる。その結果、膜応力が低下するため非エロージョン部から剥がれにくくなり、ノジュールが発生し難くなる。直流電力は、一般に量産で採用される直流電力密度は3〜6W/cm2程度であることを考慮し、2500W(直流電力密度5.17W/cm2)とした。
ノジュール発生評価は、上記条件にて、50kWhの連続スパッタリング放電後に、ターゲット表面を観察し、ノジュール発生の有無を評価した。
表1〜表5に示すように、実施例1〜29のガリウム含有量がGa/(In+Ga)原子数比で0.20以上0.45以下であり、前記正二価元素Mの含有量がM/(In+Ga+M)原子数比で0.0001以上0.05以下の場合には、ビックスバイト型構造のIn2O3相と、In2O3相以外の生成相としてβ−Ga2O3型構造のGaInO3相、あるいはβ−Ga2O3型構造のGaInO3相と(Ga,In)2O3相によって構成されていた。
Claims (9)
- インジウム、ガリウム及び正二価元素を酸化物として含有し、
前記ガリウムの含有量がGa/(In+Ga)原子数比で0.20以上0.45以下であり、
前記正二価元素全体の含有量がM/(In+Ga+M)原子数比で0.0001以上0.05以下であり、
前記正二価元素が、ニッケル、コバルト、カルシウム、ストロンチウム及び鉛からなる群より選択される一つ以上であり、
ビックスバイト型構造のIn2O3相と、In2O3相以外の生成相としてβ−Ga2O3型構造のGaInO3相、あるいはβ−Ga2O3型構造のGaInO3相と(Ga,In)2O3相によって構成され、
前記正二価元素とガリウムからなる複合酸化物のNiGa2O4相、CoGa2O4相、CaGa4O7相、Ca5Ga6O14相、SrGa12O19相、SrGa2O4相、Sr3Ga2O6相、Ga2PbO4相、又はこれらの複合酸化物相を実質的に含まないことを特徴とする酸化物焼結体。 - 前記正二価元素全体の含有量がM/(In+Ga+M)原子数比で0.0001以上0.03以下である請求項1に記載の酸化物焼結体。
- 前記ガリウムの含有量がGa/(In+Ga)原子数比で0.20以上0.30以下である請求項1又は2に記載の酸化物焼結体。
- 前記正二価元素以外の正二価元素、及び、インジウムとガリウム以外の正三価から正六価の元素、を実質的に含有しない請求項1から3のいずれかに記載の酸化物焼結体。
- 下記の式1で定義されるβ−Ga2O3型構造のGaInO3相のX線回折ピーク強度比が29%以上75%以下の範囲である請求項1から4のいずれかに記載の酸化物焼結体。
100×I[GaInO3相(111)]/{I[In2O3相(400)]+I[GaInO3相(111)]} [%]・・・・式1 - 請求項1から5のいずれかに記載の酸化物焼結体を加工して得られるスパッタリング用ターゲット。
- 請求項6に記載のスパッタリング用ターゲットを用いてスパッタリング法によって基板上に形成された後、熱処理された非晶質の酸化物半導体薄膜。
- キャリア移動度が10cm2V−1sec−1以上である請求項7に記載の酸化物半導体薄膜。
- キャリア濃度が3.0×1018cm−3未満である請求項7又は8に記載の酸化物半導体薄膜。
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