JPWO2015099001A1 - 石英ガラスルツボ及びその歪み測定装置 - Google Patents
石英ガラスルツボ及びその歪み測定装置 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 162
- 238000005259 measurement Methods 0.000 title claims description 29
- 238000009826 distribution Methods 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000001066 destructive effect Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/23—Bi-refringence
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/0047—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes measuring forces due to residual stresses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N2021/216—Polarisation-affecting properties using circular polarised light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/062—LED's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/068—Optics, miscellaneous
- G01N2201/0683—Brewster plate; polarisation controlling elements
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- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
2 ルツボ外層
3 ルツボ内層
10A〜10G 歪み測定装置
11 光源
11a 第1のLEDライト群
11b 第2のLEDライト群
12 第1の偏光板
12a 第3の偏光板
12b 第4の偏光板
13 第1の波長板
13a 第3の波長板
13b 第4の波長板
14 CCDカメラ
15 カメラ制御機構
16 第2の偏光板
17 第2の波長板
Claims (9)
- 多数の気泡を含む不透明な外層と、気泡が除去された透明な内層とを有する石英ガラスルツボの歪み測定装置であって、
前記石英ガラスルツボの外側に配置された光源と、
前記光源と前記石英ガラスルツボの壁体の外表面との間に配置された第1の偏光板と、
前記第1の偏光板と前記石英ガラスルツボの壁体の外表面との間に配置された第1の1/4波長板と、
前記石英ガラスルツボの内側に配置されたカメラと、
前記カメラの撮影方向を制御するカメラ制御機構と、
前記カメラと前記石英ガラスルツボの壁体の内表面との間に配置された第2の偏光板と、
前記カメラと前記石英ガラスルツボの壁体の内表面との間に配置され、前記第1の1/4波長板に対して光学軸が90度傾けられた第2の1/4波長板とを備え、
前記カメラは、前記光源から投光され、前記第1の偏光板、前記第1の1/4波長板、前記石英ガラスルツボの壁体、前記第2の1/4波長板及び前記第2の偏光板を通過した光をカラー撮影することを特徴とする石英ガラスルツボの歪み測定装置。 - 前記第2の1/4波長板は、前記第2の偏光板と前記石英ガラスルツボの壁体の内表面との間に配置されている、請求項1に記載の石英ガラスルツボの歪み測定装置。
- 前記第2の1/4波長板は、前記カメラと前記第2の偏光板との間に配置されている、請求項1に記載の石英ガラスルツボの歪み測定装置。
- 前記第1の偏光板は、前記石英ガラスルツボの高さ方向の全体をカバーする第3の偏光板と、前記石英ガラスルツボの底部の全面をカバーする第4の偏光板を含み、
前記第1の1/4波長板は、前記石英ガラスルツボの高さ方向の全体をカバーする第3の1/4波長板と、前記石英ガラスルツボの底部の全面をカバーする第4の1/4波長板を含む、請求項1乃至3のいずれか一項に記載の石英ガラスルツボの歪み測定装置。 - 前記光源は、前記石英ガラスルツボの高さ方向に沿って所定の間隔で配列され、前記石英ガラスルツボの側部に投光する複数の第1のLEDライトと、
前記石英ガラスルツボの径方向に沿って所定の間隔で配置され、前記石英ガラスルツボの底部に投光する複数の第2のLEDライトを含む、請求項4に記載の石英ガラスルツボの歪み測定装置。 - 前記カメラ制御機構は、前記カメラの撮影方向を前記石英ガラスルツボの高さ方向に沿って一方向に移動させながら連続的に撮影する、請求項1乃至5のいずれか一項に記載の石英ガラスルツボの歪み測定装置。
- 前記カメラ制御機構は、前記カメラの撮影方向を前記石英ガラスルツボの周方向に移動させて、前記石英ガラスルツボの全内周面を撮影する、請求項6に記載の石英ガラスルツボの歪み測定装置。
- 前記カメラの位置を固定し、前記石英ガラスルツボを回転させることにより、前記石英ガラスルツボの全内周面を撮影する、請求項6に記載の石英ガラスルツボの歪み測定装置。
- 円筒状の直胴部と、前記直胴部の下端に形成されたコーナー部と、前記コーナー部を介して前記直胴部に接続された底部とを有するシリコン単結晶引き上げ用石英ガラスルツボであって、気泡を内包する不透明な外層と、気泡が排除された透明な内層とを備え、
非破壊状態における石英ガラス内表面測定での残留歪みの分布が光路差130nm以下であることを特徴とする石英ガラスルツボ。
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KR (1) | KR101856091B1 (ja) |
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TWI572751B (zh) | 2017-03-01 |
EP3088573B1 (en) | 2020-07-15 |
KR20160094390A (ko) | 2016-08-09 |
US9816917B2 (en) | 2017-11-14 |
US20160313234A1 (en) | 2016-10-27 |
JP2017202974A (ja) | 2017-11-16 |
JP6166793B2 (ja) | 2017-07-19 |
CN105849321B (zh) | 2019-04-12 |
EP3088573A4 (en) | 2017-09-20 |
US20180045639A1 (en) | 2018-02-15 |
CN105849321A (zh) | 2016-08-10 |
EP3088573A1 (en) | 2016-11-02 |
US10024784B2 (en) | 2018-07-17 |
WO2015099001A1 (ja) | 2015-07-02 |
KR101856091B1 (ko) | 2018-05-09 |
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