JPWO2015068458A1 - GaNテンプレート基板およびデバイス基板 - Google Patents
GaNテンプレート基板およびデバイス基板 Download PDFInfo
- Publication number
- JPWO2015068458A1 JPWO2015068458A1 JP2015546322A JP2015546322A JPWO2015068458A1 JP WO2015068458 A1 JPWO2015068458 A1 JP WO2015068458A1 JP 2015546322 A JP2015546322 A JP 2015546322A JP 2015546322 A JP2015546322 A JP 2015546322A JP WO2015068458 A1 JPWO2015068458 A1 JP WO2015068458A1
- Authority
- JP
- Japan
- Prior art keywords
- gan
- layer
- substrate
- gan layer
- template substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 94
- 238000001237 Raman spectrum Methods 0.000 claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims description 22
- 238000001069 Raman spectroscopy Methods 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 16
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 14
- 238000007716 flux method Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 4
- 230000008722 morphological abnormality Effects 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000002585 base Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 208000035851 morphological anomaly Diseases 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
σ=130×Δν ・・・(式1)
なる式から算出が行える。
測定モード:顕微ラマン(ビーム径:約0.7μm);
回折格子:double 2400gr/mm。
形成温度→1100℃;
リアクタ内圧力→100kPa;
15族/13族ガス比→2000;
13族原料に対するSi原料モル比→1×10−4;
厚み→1000nm。
形成温度→800℃;
リアクタ内圧力→100kPa;
15族/13族ガス比→10000;
全13族原料に対するTMIモル比→0.6;
厚み→2nm。
形成温度→800℃;
リアクタ内圧力→100kPa;
15族/13族ガス比→20000;
厚み→5nm。
形成温度→1000℃;
リアクタ内圧力→100kPa;
15族/13族ガス比→10000;
13族原料に対するMg原料モル比→1×10−3;
厚み→100nm。
σ=130×Δν ・・・(式1)
なる式から算出が行える。
Claims (7)
- GaNテンプレート基板であって、
下地基板と、
前記下地基板の上にエピタキシャル形成された第1のGaN層と、
を備え、前記第1のGaN層の面内方向に内在する圧縮応力が、260MPa以上である、
ことを特徴とするGaNテンプレート基板。 - GaNテンプレート基板であって、
下地基板と、
前記下地基板の上にエピタキシャル形成された第1のGaN層と、
を備え、前記第1のGaN層のラマン分光測定を行って得られるラマンスペクトルにおける、波数568nm−1近傍でのGaNのE2フォノンのピークの半値幅が、1.8cm−1以下である、
ことを特徴とするGaNテンプレート基板。 - GaNテンプレート基板であって、
下地基板と、
前記下地基板の上にエピタキシャル形成された第1のGaN層と、
を備え、前記第1のGaN層の面内方向に内在する圧縮応力が、260MPa以上であり、かつ、
前記第1のGaN層のラマン分光測定を行って得られるラマンスペクトルにおける、波数568nm−1近傍でのGaNのE2フォノンのピークの半値幅が、1.8cm−1以下である、
ことを特徴とするGaNテンプレート基板。 - 請求項1または請求項3に記載のGaNテンプレート基板であって、
前記圧縮応力の値は、前記第1のGaN層のラマン分光測定を行って得られるラマンスペクトルから求められる、
ことを特徴とするGaNテンプレート基板。 - 請求項1ないし請求項4のいずれかに記載のGaNテンプレート基板であって、
前記第1のGaN層の上にエピタキシャル形成された第2のGaN層、
をさらに備えることを特徴とするGaNテンプレート基板。 - 請求項5に記載のGaNテンプレート基板であって、
前記第1のGaN層は、MOCVD法によって形成されたものであり、
前記第2のGaN層は、フラックス法によって形成されたGaN単結晶層の表面を研磨することによって形成されたものである、
ことを特徴とするGaNテンプレート基板。 - デバイス基板であって、
請求項1ないし請求項4のいずれかに記載のGaNテンプレート基板と、
前記第1のGaN層の上にエピタキシャル形成された第2のGaN層と、
前記第2のGaN層の上にエピタキシャル形成された、13族窒化物からなるデバイス層と、
を備えることを特徴とするデバイス基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361901206P | 2013-11-07 | 2013-11-07 | |
US61/901206 | 2013-11-07 | ||
PCT/JP2014/073488 WO2015068458A1 (ja) | 2013-11-07 | 2014-09-05 | GaNテンプレート基板およびデバイス基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015068458A1 true JPWO2015068458A1 (ja) | 2017-03-09 |
JP6408483B2 JP6408483B2 (ja) | 2018-10-17 |
Family
ID=53041241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015546322A Expired - Fee Related JP6408483B2 (ja) | 2013-11-07 | 2014-09-05 | GaNテンプレート基板およびデバイス基板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10128406B2 (ja) |
JP (1) | JP6408483B2 (ja) |
KR (1) | KR102172358B1 (ja) |
CN (1) | CN105745366B (ja) |
DE (1) | DE112014005131T5 (ja) |
TW (1) | TWI670854B (ja) |
WO (1) | WO2015068458A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016032038A (ja) * | 2014-07-29 | 2016-03-07 | 住友化学株式会社 | 窒化物半導体ウエハおよびその製造方法 |
CN107230737B (zh) * | 2016-03-25 | 2019-03-08 | 松下知识产权经营株式会社 | Iii族氮化物基板以及iii族氮化物结晶的制造方法 |
US11309455B2 (en) | 2017-08-24 | 2022-04-19 | Ngk Insulators, Ltd. | Group 13 element nitride layer, free-standing substrate and functional element |
JP7157062B2 (ja) * | 2017-08-24 | 2022-10-19 | 日本碍子株式会社 | 13族元素窒化物層の製造方法 |
JP6639751B2 (ja) | 2017-08-24 | 2020-02-05 | 日本碍子株式会社 | 13族元素窒化物層、自立基板および機能素子 |
CN111052413B (zh) * | 2017-08-24 | 2023-08-15 | 日本碍子株式会社 | 13族元素氮化物层、自立基板以及功能元件 |
WO2019039208A1 (ja) * | 2017-08-24 | 2019-02-28 | 日本碍子株式会社 | 13族元素窒化物層、自立基板および機能素子 |
WO2019039249A1 (ja) * | 2017-08-24 | 2019-02-28 | 日本碍子株式会社 | 13族元素窒化物層、自立基板および機能素子 |
WO2019039055A1 (ja) * | 2017-08-24 | 2019-02-28 | 日本碍子株式会社 | 13族元素窒化物層の製造方法 |
JP6857247B2 (ja) * | 2017-08-24 | 2021-04-14 | 日本碍子株式会社 | 13族元素窒化物層、自立基板および機能素子 |
CN111052415B (zh) * | 2017-08-24 | 2023-02-28 | 日本碍子株式会社 | 13族元素氮化物层、自立基板以及功能元件 |
JP6851485B2 (ja) * | 2017-08-24 | 2021-03-31 | 日本碍子株式会社 | 13族元素窒化物層、自立基板および機能素子 |
CN115343269B (zh) * | 2022-07-11 | 2023-10-03 | 清华大学 | 一种基于声子缺陷工程的材料热导性质调控方法及系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004013385A1 (ja) * | 2002-07-31 | 2004-02-12 | Osaka Industrial Promotion Organization | Iii族元素窒化物単結晶の製造方法およびそれにより得られたiii族元素窒化物透明単結晶 |
JP2004506323A (ja) * | 2000-08-04 | 2004-02-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 |
JP2007169132A (ja) * | 2005-12-26 | 2007-07-05 | Sumitomo Electric Ind Ltd | 窒化ガリウム結晶基板、半導体デバイス、半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法 |
US20130234146A1 (en) * | 2012-03-06 | 2013-09-12 | Infineon Technologies Austria Ag | Semiconductor device and method |
WO2013139887A1 (de) * | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur herstellung von iii-n-einkristallen, und iii-n-einkristall |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1204241C (zh) * | 2001-06-04 | 2005-06-01 | 高瑞伦 | 歧化酶(sod)酒的生产方法 |
US7632761B2 (en) * | 2006-06-01 | 2009-12-15 | Wayne State University | Method of making thin film anatase titanium dioxide |
JP5491065B2 (ja) * | 2009-04-30 | 2014-05-14 | 住友電気工業株式会社 | ウエハ生産物を作製する方法、及び窒化ガリウム系半導体光素子を作製する方法 |
US8525228B2 (en) * | 2010-07-02 | 2013-09-03 | The Regents Of The University Of California | Semiconductor on insulator (XOI) for high performance field effect transistors |
CN102359956B (zh) * | 2011-10-02 | 2013-06-12 | 西安电子科技大学 | a面GaN外延层薄膜腐蚀应力的拉曼表征方法 |
JP5166594B1 (ja) * | 2011-12-12 | 2013-03-21 | 株式会社東芝 | 半導体発光素子 |
TWI448427B (zh) * | 2012-02-08 | 2014-08-11 | Nat Univ Tsing Hua | 利用低頻電磁波製備石墨烯之方法 |
JP2013201397A (ja) * | 2012-03-26 | 2013-10-03 | Fujitsu Ltd | 半導体装置の製造方法、半導体装置及び半導体結晶成長用基板 |
TWI617045B (zh) * | 2012-07-06 | 2018-03-01 | 晶元光電股份有限公司 | 具有奈米柱之發光元件及其製造方法 |
-
2014
- 2014-09-05 CN CN201480057318.1A patent/CN105745366B/zh active Active
- 2014-09-05 DE DE112014005131.4T patent/DE112014005131T5/de not_active Withdrawn
- 2014-09-05 JP JP2015546322A patent/JP6408483B2/ja not_active Expired - Fee Related
- 2014-09-05 WO PCT/JP2014/073488 patent/WO2015068458A1/ja active Application Filing
- 2014-09-05 KR KR1020167011977A patent/KR102172358B1/ko active IP Right Grant
- 2014-09-17 TW TW103132022A patent/TWI670854B/zh not_active IP Right Cessation
-
2016
- 2016-04-15 US US15/099,716 patent/US10128406B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004506323A (ja) * | 2000-08-04 | 2004-02-26 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 基板上に堆積された窒化ガリウムフィルムにおける応力の制御方法 |
WO2004013385A1 (ja) * | 2002-07-31 | 2004-02-12 | Osaka Industrial Promotion Organization | Iii族元素窒化物単結晶の製造方法およびそれにより得られたiii族元素窒化物透明単結晶 |
JP2007169132A (ja) * | 2005-12-26 | 2007-07-05 | Sumitomo Electric Ind Ltd | 窒化ガリウム結晶基板、半導体デバイス、半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法 |
US20130234146A1 (en) * | 2012-03-06 | 2013-09-12 | Infineon Technologies Austria Ag | Semiconductor device and method |
WO2013139887A1 (de) * | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur herstellung von iii-n-einkristallen, und iii-n-einkristall |
Also Published As
Publication number | Publication date |
---|---|
KR102172358B1 (ko) | 2020-10-30 |
TWI670854B (zh) | 2019-09-01 |
DE112014005131T5 (de) | 2016-07-28 |
WO2015068458A1 (ja) | 2015-05-14 |
TW201528502A (zh) | 2015-07-16 |
US20160233380A1 (en) | 2016-08-11 |
KR20160085256A (ko) | 2016-07-15 |
JP6408483B2 (ja) | 2018-10-17 |
US10128406B2 (en) | 2018-11-13 |
CN105745366B (zh) | 2018-12-11 |
CN105745366A (zh) | 2016-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6408483B2 (ja) | GaNテンプレート基板およびデバイス基板 | |
JP6179624B2 (ja) | 結晶成長方法および発光素子の製造方法 | |
JP5812166B2 (ja) | 窒化物半導体の結晶成長方法 | |
WO2012074031A1 (ja) | Iii族窒化物半導体基板及びその製造方法、並びに半導体発光デバイス及びその製造方法 | |
KR102288547B1 (ko) | 주기표 제 13 족 금속 질화물 결정 및 주기표 제 13 족 금속 질화물 결정의 제조 방법 | |
JP5931737B2 (ja) | 光学素子の製造方法 | |
JP2013193914A (ja) | 13族窒化物結晶、及び13族窒化物結晶基板 | |
JP5957179B2 (ja) | 炭化アルミニウム薄膜、炭化アルミニウム薄膜を形成した半導体基板及びそれらの製造方法 | |
TWI589017B (zh) | Composite substrate and functional components | |
JP5730608B2 (ja) | 積層基板及びその製造方法 | |
US20190103273A1 (en) | Method for Producing Group III Nitride Laminate | |
JP2016082200A (ja) | 結晶積層構造体及びその製造方法、並びに半導体素子 | |
JP6442957B2 (ja) | 窒化物半導体テンプレートの製造方法 | |
CN204067415U (zh) | 复合晶片以及功能元件 | |
JP5366080B2 (ja) | 発光素子形成用複合基板、発光ダイオード素子、その製造方法 | |
JP5942547B2 (ja) | Iii族窒化物結晶の製造方法 | |
JP5893981B2 (ja) | マグネシウム・酸化亜鉛系結晶の成長方法 | |
JP2010199598A (ja) | Iii−v族窒化物系半導体基板 | |
JP2004193584A (ja) | 3−5族化合物半導体およびその製造方法 | |
JP2012136418A (ja) | Iii族窒化物半導体基板とその製造方法 | |
JP2015214447A (ja) | 自立基板の製造方法及び自立基板 | |
JP2005191599A (ja) | 発光素子の輝度の均一化方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170414 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180213 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180514 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180911 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180920 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6408483 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |