JPWO2014014109A1 - パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池 - Google Patents

パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池 Download PDF

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Publication number
JPWO2014014109A1
JPWO2014014109A1 JP2014525893A JP2014525893A JPWO2014014109A1 JP WO2014014109 A1 JPWO2014014109 A1 JP WO2014014109A1 JP 2014525893 A JP2014525893 A JP 2014525893A JP 2014525893 A JP2014525893 A JP 2014525893A JP WO2014014109 A1 JPWO2014014109 A1 JP WO2014014109A1
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JP
Japan
Prior art keywords
passivation
passivation layer
composition
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014525893A
Other languages
English (en)
Japanese (ja)
Inventor
修一郎 足立
修一郎 足立
吉田　誠人
誠人 吉田
野尻　剛
剛 野尻
倉田　靖
靖 倉田
田中　徹
徹 田中
明博 織田
明博 織田
剛 早坂
剛 早坂
服部　孝司
孝司 服部
三江子 松村
三江子 松村
敬司 渡邉
敬司 渡邉
真年 森下
真年 森下
浩孝 濱村
浩孝 濱村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2014014109A1 publication Critical patent/JPWO2014014109A1/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
JP2014525893A 2012-07-19 2013-07-19 パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池 Pending JPWO2014014109A1 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2012160336 2012-07-19
JP2012160336 2012-07-19
JP2012218389 2012-09-28
JP2012218389 2012-09-28
JP2013011934 2013-01-25
JP2013011934 2013-01-25
JP2013040153 2013-02-28
JP2013040153 2013-02-28
JP2013038895 2013-02-28
JP2013038895 2013-02-28
PCT/JP2013/069699 WO2014014109A1 (ja) 2012-07-19 2013-07-19 パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池

Publications (1)

Publication Number Publication Date
JPWO2014014109A1 true JPWO2014014109A1 (ja) 2016-07-07

Family

ID=49948929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014525893A Pending JPWO2014014109A1 (ja) 2012-07-19 2013-07-19 パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池

Country Status (4)

Country Link
JP (1) JPWO2014014109A1 (zh)
CN (1) CN104488089A (zh)
TW (1) TW201412758A (zh)
WO (1) WO2014014109A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101810892B1 (ko) * 2016-09-13 2017-12-20 동우 화인켐 주식회사 터치 센서 및 이를 포함하는 터치 스크린 패널
CN108565341B (zh) * 2018-05-04 2021-07-16 宝德照明集团有限公司 一种硅异质结太阳能电池及其制备方法
CN108831955B (zh) * 2018-06-08 2020-08-11 海门名驰工业设计有限公司 一种硅太阳能电池及其制备方法
CN111816574B (zh) * 2020-05-29 2022-03-04 济宁东方芯电子科技有限公司 一种uv膜模板及利用uv膜模板实现洁净玻璃钝化的方法
WO2022075457A1 (ja) * 2020-10-08 2022-04-14 昭和電工マテリアルズ株式会社 電極形成用組成物、太陽電池素子及びアルミニウム／銀積層電極
JPWO2022075456A1 (zh) * 2020-10-08 2022-04-14
WO2022138385A1 (ja) * 2020-12-21 2022-06-30 昭和電工マテリアルズ株式会社 電極形成用組成物、太陽電池素子及びアルミニウム／銀積層電極
WO2022176520A1 (ja) * 2021-02-16 2022-08-25 昭和電工マテリアルズ株式会社 電極形成用組成物、太陽電池素子及びアルミニウム／銀積層電極
JPWO2022176519A1 (zh) * 2021-02-16 2022-08-25
WO2022181731A1 (ja) * 2021-02-24 2022-09-01 昭和電工マテリアルズ株式会社 太陽電池素子及び太陽電池
JPWO2022181732A1 (zh) * 2021-02-24 2022-09-01
JPWO2022181730A1 (zh) * 2021-02-24 2022-09-01
CN115332364A (zh) * 2022-08-10 2022-11-11 西南交通大学 太阳能电池钝化涂覆料、制备方法及钝化方法

Citations (10)

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US4328260A (en) * 1981-01-23 1982-05-04 Solarex Corporation Method for applying antireflective coating on solar cell
US4411703A (en) * 1981-01-23 1983-10-25 Solarex Corporation Composition for applying antireflective coating on solar cell
US4496398A (en) * 1982-01-20 1985-01-29 Solarex Corporation Antireflective coating composition
JPH03188938A (ja) * 1989-08-18 1991-08-16 Hitachi Ltd 無機ポリマ薄膜の形成方法
JP2000294817A (ja) * 1999-04-09 2000-10-20 Dainippon Printing Co Ltd 太陽電池モジュ−ル用表面保護シ−トおよびそれを使用した太陽電池モジュ−ル
JP2003331650A (ja) * 2002-03-06 2003-11-21 Toray Ind Inc 誘電体ペーストおよびプラズマディスプレイの製造方法
JP2004359532A (ja) * 2003-04-09 2004-12-24 Jsr Corp タンタル酸化物膜形成用組成物、タンタル酸化物膜およびその製造方法
JP2008019285A (ja) * 2006-07-10 2008-01-31 Sekisui Chem Co Ltd 金属含有ポリマーの製造方法、金属含有ポリマー、感光性樹脂組成物及び半導体素子
JP2011517327A (ja) * 2008-03-04 2011-06-02 ダウ・コーニング・コーポレイション シリコーン組成物、シリコーン接着剤、被覆基材及び積層基材
JP2011216845A (ja) * 2010-03-18 2011-10-27 Ricoh Co Ltd 絶縁膜形成用インク、絶縁膜の製造方法及び半導体装置の製造方法

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US8876963B2 (en) * 2007-10-17 2014-11-04 Heraeus Precious Metals North America Conshohocken Llc Dielectric coating for single sided back contact solar cells
EP2450385A4 (en) * 2009-07-01 2014-09-03 Sekisui Chemical Co Ltd BINDER RESIN FOR CONDUCTIVE PASTE, CONDUCTIVE PASTE, AND SOLAR CELL ELEMENT
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328260A (en) * 1981-01-23 1982-05-04 Solarex Corporation Method for applying antireflective coating on solar cell
US4411703A (en) * 1981-01-23 1983-10-25 Solarex Corporation Composition for applying antireflective coating on solar cell
US4496398A (en) * 1982-01-20 1985-01-29 Solarex Corporation Antireflective coating composition
JPH03188938A (ja) * 1989-08-18 1991-08-16 Hitachi Ltd 無機ポリマ薄膜の形成方法
JP2000294817A (ja) * 1999-04-09 2000-10-20 Dainippon Printing Co Ltd 太陽電池モジュ−ル用表面保護シ−トおよびそれを使用した太陽電池モジュ−ル
JP2003331650A (ja) * 2002-03-06 2003-11-21 Toray Ind Inc 誘電体ペーストおよびプラズマディスプレイの製造方法
JP2004359532A (ja) * 2003-04-09 2004-12-24 Jsr Corp タンタル酸化物膜形成用組成物、タンタル酸化物膜およびその製造方法
JP2008019285A (ja) * 2006-07-10 2008-01-31 Sekisui Chem Co Ltd 金属含有ポリマーの製造方法、金属含有ポリマー、感光性樹脂組成物及び半導体素子
JP2011517327A (ja) * 2008-03-04 2011-06-02 ダウ・コーニング・コーポレイション シリコーン組成物、シリコーン接着剤、被覆基材及び積層基材
JP2011216845A (ja) * 2010-03-18 2011-10-27 Ricoh Co Ltd 絶縁膜形成用インク、絶縁膜の製造方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
WO2014014109A1 (ja) 2014-01-23
CN104488089A (zh) 2015-04-01
WO2014014109A9 (ja) 2014-06-19
TW201412758A (zh) 2014-04-01

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