JPWO2013099382A1 - 機能性材料の製造方法および電子部品 - Google Patents
機能性材料の製造方法および電子部品 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 239000002105 nanoparticle Substances 0.000 claims abstract description 101
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 75
- 239000002904 solvent Substances 0.000 claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 39
- 239000002994 raw material Substances 0.000 claims abstract description 35
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 8
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 8
- 239000002082 metal nanoparticle Substances 0.000 description 7
- 239000013154 zeolitic imidazolate framework-8 Substances 0.000 description 7
- MFLKDEMTKSVIBK-UHFFFAOYSA-N zinc;2-methylimidazol-3-ide Chemical compound [Zn+2].CC1=NC=C[N-]1.CC1=NC=C[N-]1 MFLKDEMTKSVIBK-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
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- 230000007704 transition Effects 0.000 description 6
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- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 235000021355 Stearic acid Nutrition 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 4
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000008117 stearic acid Substances 0.000 description 4
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 4
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- -1 silicon alkoxide Chemical class 0.000 description 3
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- B82—NANOTECHNOLOGY
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Abstract
Description
また、この発明にかかる機能性材料の製造方法は、ナノ粒子を少なくとも担持または内包させた多孔性金属錯体を含む機能性材料の製造方法であって、ナノ粒子を構成するための金属化合物である第1の粒子構成原料および多孔性金属錯体を溶媒に添加させて第1の混合溶媒を作製する工程と、ナノ粒子を構成する第2の粒子構成原料およびを溶媒に添加させて第2の混合溶媒を作製する工程と、第1の混合溶媒に第2の混合溶媒を混合し、多孔性金属錯体に少なくとも担持または内包させるナノ粒子を合成する工程とを含む、機能性材料の製造方法であることが好ましい。
また、この発明にかかる機能性材料を用いた電子部品は、ナノ粒子を少なくとも担持または内包させた多孔性金属錯体を含む機能性材料を用いた電子部品素子を含む、電子部品である。
また、この発明にかかる電子部品は、ナノ粒子を高密度に近接して配列させるように少なくとも担持または内包させた多孔性金属錯体を含む機能性材料を用いた電子部品素子を含むので、電磁気学的なエネルギー変換の効率が向上した電子部品を得ることができる。
本発明にかかる機能性材料の製造方法により製造される機能性材料の一例について説明する。図1は、本発明にかかる機能性材料の製造方法により製造される機能性材料の構造の一例を示す模式図である。
次に、上述した機能性材料の製造方法について、説明する。本発明にかかる機能性材料の製造方法は、多孔性金属錯体およびナノ粒子構成原料とを用いて合成することにより、ナノ粒子を少なくとも担持または内包させた多孔性金属錯体を含む機能性材料を製造するための製造方法である。以下、本発明にかかる機能性材料の製造方法について詳細に説明する。
上述したように、本発明にかかる機能性材料の製造方法により製造された機能性材料は、ナノ粒子の粒子径の細かな制御を可能にし、かつそのナノ粒子を高密度に近接配列することが可能である。従って、この機能性材料を以下のような電子部品の電子部品素子に適用することができる。
12 ナノ粒子
14 細孔
20 発光素子
22 ガラス基板
24 陽極
26 正孔輸送層
28 発光層
30 正孔阻止層
32 電子輸送層
34 陰極
36 正孔
38 電子
40 受光素子
42 電極
44 半導体基板
46 n型半導体層
48 i型半導体層
50 p型半導体層
52 グリッド電極
54 反射防止膜
60 単電子トランジスタ
62 ソース電極
64 ゲート電極
66 ドレイン電極
68 伝導領域
70 トンネル障壁
72 トンネル障壁
74 電子
また、この発明にかかる機能性材料の製造方法は、ナノ粒子を内包させた多孔性金属錯体を含む機能性材料の製造方法であって、ナノ粒子を構成するための金属化合物である第1の粒子構成原料および多孔性金属錯体を溶媒に添加させて第1の混合溶液を作製する工程と、ナノ粒子を構成する第2の粒子構成原料を溶媒に添加させて第2の混合溶液を作製する工程と、第1の混合溶液に第2の混合溶液を混合し、多孔性金属錯体に内包させるナノ粒子を合成する工程とを含む、機能性材料の製造方法であることが好ましい。
また、この発明にかかる機能性材料を用いた電子部品は、ナノ粒子を内包させた多孔性金属錯体を含む機能性材料を用いた電子部品素子を含む、電子部品である。
また、この発明にかかる電子部品は、ナノ粒子を高密度に近接して配列させるように内包させた多孔性金属錯体を含む機能性材料を用いた電子部品素子を含むので、電磁気学的なエネルギー変換の効率が向上した電子部品を得ることができる。
Claims (3)
- ナノ粒子を少なくとも担持または内包させた多孔性金属錯体を含む機能性材料の製造方法であって、
前記ナノ粒子を構成する複数の粒子構成原料および多孔性金属錯体を溶媒に添加した後に、所望の温度に加熱することによって、多孔性金属錯体に少なくとも担持または内包させるナノ粒子を合成する工程
を含む、機能性材料の製造方法。 - ナノ粒子を少なくとも担持または内包させた多孔性金属錯体を含む機能性材料の製造方法であって、
前記ナノ粒子を構成するための金属化合物である第1の粒子構成原料および多孔性金属錯体を溶媒に添加させて第1の混合溶媒を作製する工程と、
前記ナノ粒子を構成する第2の粒子構成原料を溶媒に添加させて第2の混合溶媒を作製する工程と、
前記第1の混合溶媒に前記第2の混合溶媒を混合し、多孔性金属錯体に少なくとも担持または内包させるナノ粒子を合成する工程と、
を含む、機能性材料の製造方法。 - ナノ粒子を少なくとも担持または内包させた多孔性金属錯体を含む機能性材料を用いた電子部品素子を含む、電子部品。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04276724A (ja) * | 1991-03-04 | 1992-10-01 | Matsushita Electric Ind Co Ltd | 半導体微粒子分散ガラスの製造方法 |
JP2003251599A (ja) * | 2002-02-27 | 2003-09-09 | Japan Science & Technology Corp | 内部に制御された空隙を有するコア・シェル構造体及びそれを構成要素とする構造体並びにこれらの調製方法 |
JP2008510852A (ja) * | 2004-08-17 | 2008-04-10 | インヴィトロジェン コーポレーション | 高発光性コロイド粒子の合成 |
US20080230750A1 (en) * | 2007-03-20 | 2008-09-25 | Evident Technologies, Inc. | Powdered quantum dots |
JP2008259993A (ja) * | 2007-04-13 | 2008-10-30 | Tokyo Metropolitan Univ | 金微粒子を担体に分散・固定する方法、これにより得られた金微粒子担持担体および触媒ならびに着色剤 |
JP2008287900A (ja) * | 2007-05-15 | 2008-11-27 | Osaka Univ | 光電変換素子及びその製造方法、並びにその素子を用いた太陽電池 |
JP2009528251A (ja) * | 2006-02-28 | 2009-08-06 | ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン | 機能性ゼオライト骨格の作製 |
JP2010013568A (ja) * | 2008-07-04 | 2010-01-21 | New Industry Research Organization | 多孔質ナノ材料分散体及びその製造方法 |
WO2013021944A1 (ja) * | 2011-08-05 | 2013-02-14 | 国立大学法人京都大学 | 金属ナノ粒子のpcp複合体とその作製方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4276724B2 (ja) | 1999-02-08 | 2009-06-10 | 大日本印刷株式会社 | 光学素子およびその製法 |
EP1244165A3 (en) * | 2001-03-19 | 2006-03-29 | Ube Industries, Ltd. | Electrode base material for fuel cell |
JP2003261699A (ja) | 2002-03-08 | 2003-09-19 | Toray Eng Co Ltd | 液晶ポリマー用エッチング液及びそれを用いるエッチング方法 |
CN1233466C (zh) * | 2002-09-17 | 2005-12-28 | 中国科学院化学研究所 | 液相法制备活性组分小于5纳米的金属原子簇均匀分布在多孔氧化物载体上的方法 |
DE10355087A1 (de) * | 2003-11-24 | 2005-06-09 | Basf Ag | Verfahren zur elektrochemischen Herstellung eines kristallinen porösen metallorganischen Gerüstmaterials |
JP2008198614A (ja) | 2004-11-11 | 2008-08-28 | Sony Corp | 発光素子及びその製造方法、並びに、発光装置 |
CN101269317B (zh) * | 2007-03-23 | 2011-06-08 | 中国科学院大连化学物理研究所 | 一种负载型多孔金属有机化合物储氢材料 |
US8197579B2 (en) * | 2009-06-19 | 2012-06-12 | Empire Technology Development Llc | Gas storage and release using piezoelectric materials |
CN101752571A (zh) * | 2010-01-11 | 2010-06-23 | 华南师范大学 | 一种直接甲醇燃料电池阳极催化剂及其制备方法 |
US9085460B2 (en) * | 2010-03-17 | 2015-07-21 | Northwestern University | Nanoporous carbohydrate frameworks and the sequestration and detection of molecules using the same |
-
2012
- 2012-10-01 JP JP2013551504A patent/JP5835348B2/ja active Active
- 2012-10-01 CN CN201280052671.1A patent/CN103889889A/zh active Pending
- 2012-10-01 WO PCT/JP2012/075339 patent/WO2013099382A1/ja active Application Filing
-
2014
- 2014-06-27 US US14/317,011 patent/US9608213B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04276724A (ja) * | 1991-03-04 | 1992-10-01 | Matsushita Electric Ind Co Ltd | 半導体微粒子分散ガラスの製造方法 |
JP2003251599A (ja) * | 2002-02-27 | 2003-09-09 | Japan Science & Technology Corp | 内部に制御された空隙を有するコア・シェル構造体及びそれを構成要素とする構造体並びにこれらの調製方法 |
JP2008510852A (ja) * | 2004-08-17 | 2008-04-10 | インヴィトロジェン コーポレーション | 高発光性コロイド粒子の合成 |
JP2009528251A (ja) * | 2006-02-28 | 2009-08-06 | ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン | 機能性ゼオライト骨格の作製 |
US20080230750A1 (en) * | 2007-03-20 | 2008-09-25 | Evident Technologies, Inc. | Powdered quantum dots |
JP2008259993A (ja) * | 2007-04-13 | 2008-10-30 | Tokyo Metropolitan Univ | 金微粒子を担体に分散・固定する方法、これにより得られた金微粒子担持担体および触媒ならびに着色剤 |
JP2008287900A (ja) * | 2007-05-15 | 2008-11-27 | Osaka Univ | 光電変換素子及びその製造方法、並びにその素子を用いた太陽電池 |
JP2010013568A (ja) * | 2008-07-04 | 2010-01-21 | New Industry Research Organization | 多孔質ナノ材料分散体及びその製造方法 |
WO2013021944A1 (ja) * | 2011-08-05 | 2013-02-14 | 国立大学法人京都大学 | 金属ナノ粒子のpcp複合体とその作製方法 |
Non-Patent Citations (8)
Title |
---|
JPN6015007597; Xiaojun Gu, Zhang-Hui Lu, Hai-Long Jiang, Tomoki Akita, and Qiang Xu: 'Synergistic Catalysis of Metal-Organic Framework-Immobilized Au-Pd Nanoparticles in Dehydrogenation' Journal of the American Chemical Society Vol.133, No.31, 20110715, pp.11822-11825 * |
JPN6015007601; Hai-Long Jiang, Tomoki Akita, Tamao Ishida, Masatake Haruta, and Qiang Xu: 'Synergistic Catalysis of Au@Ag Core-Shell Nanoparticles Stabilized on Metal-Organic Framework' Journal of the American Chemical Society Vol.133, No.5, 20110107, pp.1304-1306 * |
JPN6015007602; Ken-ichi Okazaki, Norihisa Kojima, Yasuhiro Tachibana, Susumu Kuwabata, and Tsukasa Torimoto: 'One-step Preparation and Photosensitivity of Size-quantized Cadmium Chalcogenide Nanoparticles Depos' CHEMISTRY LETTERS Vol.36, No.6, 20070428, pp.712-713 * |
JPN6015007603; Daniel Esken, Stuart Turner, Oleg I. Lebedev, Gustaaf Van Tendeloo, and Roland A. Fischer: 'Au@ZIFs: Stabilization and Encapsulation of Cavity-Size Matching Gold Clusters inside Functionalized' CHEMISTRY OF MATERIALS Vol.22, No.23, 20101112, pp.6393-6401 * |
JPN6015007604; Olivia Niitsoo, Shaibal K. Sarkar, Christophe Pejoux, Sven Ruhle, David Cahen, Gary Hodes: 'Chemical bath deposited CdS/CdSe-sensitized porous TiO2 solar cells' Journal of Photochemistry and Photobiology A: Chemistry Vol.181, No.2-3, 20060120, pp.306-313 * |
JPN6015007606; Felicitas Schroder, Daniel Esken, Mirza Cokoja, Maurits W. E. van den Berg, Oleg I. Lebedev, Gustaaf: 'Ruthenium Nanoparticles inside Porous [Zn4O(bdc)3] by Hydrogenolysis of Adsorbed [Ru(cod)(cot)]: A S' Journal of the American Chemical Society Vol.130, N * |
JPN6015007607; 北川進: '多孔性金属錯体の合成と機能に関する研究' Bulletin of Japan Society of Coordination Chemistry Vol. 51, 2008, pp.13-19 * |
JPN7015000499; Daniel Esken, Heshmat Noei, Yuemin Wang, Christian Wiktor, Stuart Turner, Gustaaf Van Tendeloo and R: 'ZnO@ZIF-8: stabilization of quantum confined ZnO nanoparticles by a zinc methylimidazolate framework' Journal of Materials Chemistry Vol.21, 20110318, pp.5907-5915 * |
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