JPWO2013005646A1 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JPWO2013005646A1 JPWO2013005646A1 JP2013522954A JP2013522954A JPWO2013005646A1 JP WO2013005646 A1 JPWO2013005646 A1 JP WO2013005646A1 JP 2013522954 A JP2013522954 A JP 2013522954A JP 2013522954 A JP2013522954 A JP 2013522954A JP WO2013005646 A1 JPWO2013005646 A1 JP WO2013005646A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
- LEDダイを含む半導体発光素子の製造方法において、
蛍光体を含有した蛍光体シートに前記LEDダイを配置し、
半導体発光素子の発光色が所望の値になるように、前記蛍光体シートに前記LEDダイを押し込むための押し込み量を調整する、
ステップを含むことを特徴とする半導体発光素子の製造方法。 - 発光波長分布の揃った複数のLEDダイを準備するステップを更に有し、
前記蛍光体シートに前記発光波長分布の揃った複数のLEDダイを整列して配置し、
ヘッドを用いて、前記発光波長分布の揃った複数のLEDダイを同時に加圧することによって、前記蛍光体シートに押し込む、
請求項1に記載の半導体発光素子の製造方法。 - 前記複数のLEDダイの内の一部のLEDダイを点灯させ、
前記点灯させた一部のLEDダイの発光色を計測しながら加圧し、
前記点灯させた一部のLEDダイの発光色が所望の値となるような押し込み量を決定し、
前記決定された押し込み量となるように、複数のLEDダイの内の前記点灯させた一部のLEDダイ以外の他のLEDダイを同時に加圧して、前記蛍光体シートに押し込む、
請求項2に記載の半導体発光素子の製造方法。 - 前記ヘッドは、加圧及び加熱可能である、請求項2又は3に記載の半導体発光素子の製造方法。
- 透明ステージに前記蛍光体シートを貼り付け、
前記LEDダイを点灯させながら前記蛍光体シートに押し込み、
前記透明ステージを介して発光色を計測し、
前記発光色が所望の値になるよう押し込み量を調整する、
請求項1に記載の半導体発光素子の製造方法。 - 前記蛍光体シートに前記LEDダイを押し込む前に、前記蛍光体シートと前記LEDダイとの間に接着材を塗布するステップを更に有する、請求項1〜5の何れか一項に記載の半導体発光素子の製造方法。
- 前記押し込み量を調整した後、前記LEDダイの周囲を反射性樹脂でモールドするステップを更に有する、請求項1〜6の何れか一項に記載の半導体発光素子の製造方法。
- 前記モールドを行うステップの後に、前記蛍光体シートとともに前記反射性樹脂を切断して各半導体発光素子に個片化し、
個片化された半導体発光素子をサーフェースマウンタ用のキャリアテープに装填する、
ステップを更に有する、請求項7に記載の半導体発光素子の製造方法。
Priority Applications (1)
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JP2013522954A JP5843859B2 (ja) | 2011-07-01 | 2012-06-28 | 半導体発光素子の製造方法 |
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JP2011146988 | 2011-07-01 | ||
JP2011146988 | 2011-07-01 | ||
JP2013522954A JP5843859B2 (ja) | 2011-07-01 | 2012-06-28 | 半導体発光素子の製造方法 |
PCT/JP2012/066586 WO2013005646A1 (ja) | 2011-07-01 | 2012-06-28 | 半導体発光素子の製造方法 |
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JPWO2013005646A1 true JPWO2013005646A1 (ja) | 2015-02-23 |
JP5843859B2 JP5843859B2 (ja) | 2016-01-13 |
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US (1) | US8956887B2 (ja) |
JP (1) | JP5843859B2 (ja) |
WO (1) | WO2013005646A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9793447B2 (en) | 2013-04-24 | 2017-10-17 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and optoelectronic semiconductor component |
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JP6055259B2 (ja) * | 2012-10-03 | 2016-12-27 | 日東電工株式会社 | 封止シート被覆半導体素子、その製造方法、半導体装置およびその製造方法 |
JP2014096491A (ja) * | 2012-11-09 | 2014-05-22 | Nitto Denko Corp | 蛍光体層被覆半導体素子、その製造方法、半導体装置およびその製造方法 |
JP2015173142A (ja) * | 2014-03-11 | 2015-10-01 | 株式会社東芝 | 半導体発光装置 |
KR102408839B1 (ko) | 2014-06-19 | 2022-06-14 | 루미리즈 홀딩 비.브이. | 작은 소스 크기를 갖는 파장 변환 발광 디바이스 |
JP6065135B2 (ja) * | 2015-04-02 | 2017-01-25 | 日亜化学工業株式会社 | 発光装置 |
US10249802B2 (en) | 2015-04-02 | 2019-04-02 | Nichia Corporation | Light emitting device and method for manufacturing the same |
JP6424738B2 (ja) | 2015-05-26 | 2018-11-21 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
DE102015112969A1 (de) * | 2015-08-06 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
DE102015120855B4 (de) * | 2015-12-01 | 2021-06-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
JP6711021B2 (ja) * | 2016-03-02 | 2020-06-17 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6940740B2 (ja) * | 2016-05-06 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
DE102016208489A1 (de) * | 2016-05-18 | 2017-11-23 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines optoelektronischen bauteils und optoelektronisches bauteil |
CN107170773B (zh) * | 2017-05-23 | 2019-09-17 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制作方法 |
JP6729525B2 (ja) * | 2017-09-14 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7048883B2 (ja) * | 2017-11-30 | 2022-04-06 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6784287B2 (ja) * | 2018-12-27 | 2020-11-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6669292B2 (ja) * | 2019-02-28 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP7243330B2 (ja) * | 2019-03-15 | 2023-03-22 | 市光工業株式会社 | 発光素子及び車両用灯具、並びに発光素子の製造方法 |
US20220199862A1 (en) * | 2020-05-28 | 2022-06-23 | Boe Technology Group Co., Ltd. | Intermediate substrate and fabrication method of display panel |
US12051771B2 (en) * | 2020-10-30 | 2024-07-30 | Nichia Corporation | Light emitting device and method of manufacturing light emitting device |
JP7389364B2 (ja) | 2021-07-30 | 2023-11-30 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN115425124B (zh) * | 2022-10-17 | 2024-01-26 | 硅能光电半导体(广州)有限公司 | 一种倒装白光led封装结构的制备方法 |
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- 2012-06-28 US US14/129,970 patent/US8956887B2/en active Active
- 2012-06-28 JP JP2013522954A patent/JP5843859B2/ja active Active
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JP5843859B2 (ja) | 2016-01-13 |
US8956887B2 (en) | 2015-02-17 |
US20140220714A1 (en) | 2014-08-07 |
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