JPWO2012090694A1 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
- Publication number
- JPWO2012090694A1 JPWO2012090694A1 JP2012550809A JP2012550809A JPWO2012090694A1 JP WO2012090694 A1 JPWO2012090694 A1 JP WO2012090694A1 JP 2012550809 A JP2012550809 A JP 2012550809A JP 2012550809 A JP2012550809 A JP 2012550809A JP WO2012090694 A1 JPWO2012090694 A1 JP WO2012090694A1
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- insulating sheet
- wiring
- cell module
- tab
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005476 soldering Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000000630 rising effect Effects 0.000 claims abstract description 13
- 239000012790 adhesive layer Substances 0.000 claims description 26
- 239000000945 filler Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- QLZJUIZVJLSNDD-UHFFFAOYSA-N 2-(2-methylidenebutanoyloxy)ethyl 2-methylidenebutanoate Chemical compound CCC(=C)C(=O)OCCOC(=O)C(=C)CC QLZJUIZVJLSNDD-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000005042 ethylene-ethyl acrylate Substances 0.000 description 2
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
11 基板
12 n型領域
13 p型領域
16 n型電極
17 p型電極
16a、17a 半田付け領域
30 配線タブ
30a 平坦部
30b 立ち上がり部
30c 延伸部
50 絶縁シート
Claims (6)
- 太陽電池の裏面上に配された配線材を有する太陽電池モジュールであって、
前記配線材と太陽電池の間に挟み込まれる絶縁シートを備え
前記配線材は、半田付けされる領域に対応する平坦部と、平坦部から絶縁シートの厚みに対応して立ち上がる立ち上がり部と、立ち上がり部から平坦部と平行になるように折れ曲がる延伸部と、を有する、太陽電池モジュール。 - 前記太陽電池に、前記配線材の平坦部より面積が大きく形成された半田付け領域が設けられている、請求項1に記載の太陽電池モジュール。
- 前記絶縁シートは充填材で形成されている、請求項1に記載の太陽電池モジュール。
- 前記絶縁シートは、絶縁基材の両面に接着層が設けられている請求項1に記載の太陽電池モジュール。
- 前記接着層は熱可逆性樹脂からなる請求項4に記載の太陽電池モジュール。
- 前記太陽電池は、裏面接合型の太陽電池である、請求項1乃至5のいずれか1項に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010293027 | 2010-12-28 | ||
JP2010293027 | 2010-12-28 | ||
PCT/JP2011/078751 WO2012090694A1 (ja) | 2010-12-28 | 2011-12-13 | 太陽電池モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2012090694A1 true JPWO2012090694A1 (ja) | 2014-06-05 |
Family
ID=46382810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012550809A Pending JPWO2012090694A1 (ja) | 2010-12-28 | 2011-12-13 | 太陽電池モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130284232A1 (ja) |
JP (1) | JPWO2012090694A1 (ja) |
WO (1) | WO2012090694A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD765590S1 (en) * | 2013-12-11 | 2016-09-06 | Solaero Technologies Corp. | Solar cell |
USD765024S1 (en) * | 2013-12-11 | 2016-08-30 | Solaero Technologies Corp. | Solar cell |
WO2016068051A1 (ja) | 2014-10-31 | 2016-05-06 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
US10483410B2 (en) * | 2015-10-20 | 2019-11-19 | Alta Devices, Inc. | Forming front metal contact on solar cell with enhanced resistance to stress |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000332284A (ja) * | 1999-05-24 | 2000-11-30 | Kyocera Corp | 太陽電池モジュール |
JP4526223B2 (ja) * | 2001-06-29 | 2010-08-18 | シャープ株式会社 | 配線部材ならびに太陽電池モジュールおよびその製造方法 |
JP4493485B2 (ja) * | 2004-04-28 | 2010-06-30 | シャープ株式会社 | 太陽電池モジュール用配線部材、それを用いた太陽電池モジュールおよび太陽電池モジュール用配線部材の製造方法 |
JP4738147B2 (ja) * | 2005-03-29 | 2011-08-03 | 京セラ株式会社 | 太陽電池モジュール及びその製造方法 |
JP2007165773A (ja) * | 2005-12-16 | 2007-06-28 | Sharp Corp | 太陽電池モジュールおよび出力リードフレーム |
US9184327B2 (en) * | 2006-10-03 | 2015-11-10 | Sunpower Corporation | Formed photovoltaic module busbars |
US20090139557A1 (en) * | 2007-11-30 | 2009-06-04 | Douglas Rose | Busbar connection configuration to accommodate for cell misalignment |
-
2011
- 2011-12-13 WO PCT/JP2011/078751 patent/WO2012090694A1/ja active Application Filing
- 2011-12-13 JP JP2012550809A patent/JPWO2012090694A1/ja active Pending
-
2013
- 2013-06-27 US US13/929,068 patent/US20130284232A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20130284232A1 (en) | 2013-10-31 |
WO2012090694A1 (ja) | 2012-07-05 |
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