JPWO2012017533A1 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
Description
先ず、参考例について説明する。図1A乃至図1Gは、半導体装置の製造方法の参考例を工程順に示す断面図である。
先ず、第1の実施形態について説明する。図3A乃至図3Gは、第1の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。また、図4A乃至図4Cは、第1の実施形態に係る半導体装置の製造方法を工程順に示す斜視図である。
次に、第2の実施形態について説明する。図5A乃至図5Gは、第2の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。また、図6A乃至図6Bは、第2の実施形態に係る半導体装置の製造方法を工程順に示す斜視図である。
次に、第3の実施形態について説明する。図7A乃至図7Gは、第3の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。また、図8A乃至図8Cは、第3の実施形態に係る半導体装置の製造方法を工程順に示す斜視図である。
次に、第4の実施形態について説明する。図9A乃至図9Eは、第4の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。また、図10A乃至図10Eは、第4の実施形態に係る半導体装置の製造方法を工程順に示す斜視図である。
次に、第5の実施形態について説明する。図11A乃至図11Fは、第5の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。また、図12A乃至図12Cは、第5の実施形態に係る半導体装置の製造方法を工程順に示す斜視図である。
以下、本発明の諸態様を付記としてまとめて記載する。
(付記1)
基板上方に触媒膜を形成する工程と、
前記触媒膜上にグラフェンを成長する工程と、
前記触媒膜の下面を露出する隙間を形成する工程と、
前記隙間を介して、前記触媒膜を除去する工程と、
を有することを特徴とする半導体装置の製造方法。
(付記2)
前記触媒膜を形成する工程の前に、前記基板上方に土台を形成する工程を有し、
前記触媒膜を前記土台上に形成し、
前記隙間を形成する工程は、前記土台を除去する工程を有することを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)
前記土台として、グラフェンの触媒として機能しないものを形成することを特徴とする付記2に記載の半導体装置の製造方法。
(付記4)
前記隙間を形成する工程は、前記基板の表面をエッチングして前記触媒膜の下方まで延びる凹部を形成することを特徴とする付記1に記載の半導体装置の製造方法。
(付記5)
前記触媒膜を除去する工程の前に、前記グラフェンの端部を覆う2個の電極を形成する工程を有することを特徴とする付記1に記載の半導体装置の製造方法。
(付記6)
前記触媒膜を除去する工程の後に、
前記2個の電極間で前記グラフェンを覆うゲート絶縁膜を形成する工程と、
前記グラフェンとの間で絶縁膜を挟むゲート電極を形成する工程と、
を有することを特徴とする付記5に記載の半導体装置の製造方法。
(付記7)
前記基板は、前記触媒膜が形成される側の表面に形成された絶縁膜を有することを特徴とする付記1に記載の半導体装置の製造方法。
(付記8)
基板上方に触媒膜を形成する工程と、
前記触媒膜の上面を露出する保護膜を形成する工程と、
前記触媒膜の上面上にグラフェンを成長する工程と、
を有することを特徴とする半導体装置の製造方法。
(付記9)
前記保護膜は、前記触媒膜の側面の少なくとも一部を覆うことを特徴とする付記8に記載の半導体装置の製造方法。
(付記10)
前記グラフェンを成長する工程の後に、前記保護膜を除去する工程を有することを特徴とする付記8に記載の半導体装置の製造方法。
(付記11)
前記保護膜を形成する工程は、
前記触媒膜を覆う前記保護膜の原料膜を前記基板上方に形成する工程と、
前記原料膜を前記触媒膜の上面が露出するまで研磨する工程と、
を有することを特徴とする付記8に記載の半導体装置の製造方法。
(付記12)
前記保護膜を形成する工程は、
前記触媒膜の上面を覆う犠牲膜を形成する工程と、
前記触媒膜の側面の少なくとも一部を覆い、前記犠牲膜の側面の少なくとも一部を露出する前記保護膜の原料膜を前記基板上方に形成する工程と、
前記犠牲膜を除去して前記触媒膜の上面を露出する工程と、
を有することを特徴とする付記8に記載の半導体装置の製造方法。
(付記13)
前記触媒膜の上面を露出する工程において、前記犠牲膜上に前記原料膜の一部が存在する場合、前記犠牲膜と共に前記一部を除去することを特徴とする付記12に記載の半導体装置の製造方法。
(付記14)
前記保護膜を形成する工程は、
前記触媒膜の上面を覆う犠牲膜を形成する工程と、
前記触媒膜の側面をエッチングして前記触媒膜の側面を前記犠牲膜の側面よりも内側まで後退させる工程と、
前記犠牲膜の下方において前記触媒膜の側面の少なくとも一部を覆い、前記犠牲膜の側面の少なくとも一部を露出する前記保護膜の原料膜を前記基板上方に形成する工程と、
前記犠牲膜を除去して前記触媒膜の上面を露出する工程と、
を有することを特徴とする付記8に記載の半導体装置の製造方法。
(付記15)
前記触媒膜の上面を露出する工程において、前記犠牲膜上に前記原料膜の一部が存在する場合、前記犠牲膜と共に前記一部を除去することを特徴とする付記14に記載の半導体装置の製造方法。
(付記16)
前記触媒膜を除去する工程の前に、前記グラフェンの端部を覆う2個の電極を形成する工程を有することを特徴とする付記8に記載の半導体装置の製造方法。
(付記17)
前記触媒膜を除去する工程の後に、
前記2個の電極間で前記グラフェンを覆うゲート絶縁膜を形成する工程と、
前記グラフェンとの間で絶縁膜を挟むゲート電極を形成する工程と、
を有することを特徴とする付記16に記載の半導体装置の製造方法。
(付記18)
前記基板は、前記触媒膜が形成される側の表面に形成された絶縁膜を有することを特徴とする付記8に記載の半導体装置の製造方法。
(付記19)
基板上方に触媒膜を形成する工程と、
前記触媒膜上にグラフェンを成長する工程と、
前記触媒膜の下面を露出する隙間を形成する工程と、
前記隙間を介して、前記触媒膜を除去する工程と、
を有することを特徴とするグラフェンの成長方法。
(付記20)
基板上方に触媒膜を形成する工程と、
前記触媒膜の上面を露出する保護膜を形成する工程と、
前記触媒膜の上面上にグラフェンを成長する工程と、
を有することを特徴とするグラフェンの成長方法。
Claims (20)
- 基板上方に触媒膜を形成する工程と、
前記触媒膜上にグラフェンを成長する工程と、
前記触媒膜の下面を露出する隙間を形成する工程と、
前記隙間を介して、前記触媒膜を除去する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記触媒膜を形成する工程の前に、前記基板上方に土台を形成する工程を有し、
前記触媒膜を前記土台上に形成し、
前記隙間を形成する工程は、前記土台を除去する工程を有することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記土台として、グラフェンの触媒として機能しないものを形成することを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記隙間を形成する工程は、前記基板の表面をエッチングして前記触媒膜の下方まで延びる凹部を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記触媒膜を除去する工程の前に、前記グラフェンの端部を覆う2個の電極を形成する工程を有することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記触媒膜を除去する工程の後に、
前記2個の電極間で前記グラフェンを覆うゲート絶縁膜を形成する工程と、
前記グラフェンとの間で絶縁膜を挟むゲート電極を形成する工程と、
を有することを特徴とする請求項5に記載の半導体装置の製造方法。 - 前記基板は、前記触媒膜が形成される側の表面に形成された絶縁膜を有することを特徴とする請求項1に記載の半導体装置の製造方法。
- 基板上方に触媒膜を形成する工程と、
前記触媒膜の上面を露出する保護膜を形成する工程と、
前記触媒膜の上面上にグラフェンを成長する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記保護膜は、前記触媒膜の側面の少なくとも一部を覆うことを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記グラフェンを成長する工程の後に、前記保護膜を除去する工程を有することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記保護膜を形成する工程は、
前記触媒膜を覆う前記保護膜の原料膜を前記基板上方に形成する工程と、
前記原料膜を前記触媒膜の上面が露出するまで研磨する工程と、
を有することを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記保護膜を形成する工程は、
前記触媒膜の上面を覆う犠牲膜を形成する工程と、
前記触媒膜の側面の少なくとも一部を覆い、前記犠牲膜の側面の少なくとも一部を露出する前記保護膜の原料膜を前記基板上方に形成する工程と、
前記犠牲膜を除去して前記触媒膜の上面を露出する工程と、
を有することを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記触媒膜の上面を露出する工程において、前記犠牲膜上に前記原料膜の一部が存在する場合、前記犠牲膜と共に前記一部を除去することを特徴とする請求項12に記載の半導体装置の製造方法。
- 前記保護膜を形成する工程は、
前記触媒膜の上面を覆う犠牲膜を形成する工程と、
前記触媒膜の側面をエッチングして前記触媒膜の側面を前記犠牲膜の側面よりも内側まで後退させる工程と、
前記犠牲膜の下方において前記触媒膜の側面の少なくとも一部を覆い、前記犠牲膜の側面の少なくとも一部を露出する前記保護膜の原料膜を前記基板上方に形成する工程と、
前記犠牲膜を除去して前記触媒膜の上面を露出する工程と、
を有することを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記触媒膜の上面を露出する工程において、前記犠牲膜上に前記原料膜の一部が存在する場合、前記犠牲膜と共に前記一部を除去することを特徴とする請求項14に記載の半導体装置の製造方法。
- 前記触媒膜を除去する工程の前に、前記グラフェンの端部を覆う2個の電極を形成する工程を有することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記触媒膜を除去する工程の後に、
前記2個の電極間で前記グラフェンを覆うゲート絶縁膜を形成する工程と、
前記グラフェンとの間で絶縁膜を挟むゲート電極を形成する工程と、
を有することを特徴とする請求項16に記載の半導体装置の製造方法。 - 前記基板は、前記触媒膜が形成される側の表面に形成された絶縁膜を有することを特徴とする請求項8に記載の半導体装置の製造方法。
- 基板上方に触媒膜を形成する工程と、
前記触媒膜上にグラフェンを成長する工程と、
前記触媒膜の下面を露出する隙間を形成する工程と、
前記隙間を介して、前記触媒膜を除去する工程と、
を有することを特徴とするグラフェンの成長方法。 - 基板上方に触媒膜を形成する工程と、
前記触媒膜の上面を露出する保護膜を形成する工程と、
前記触媒膜の上面上にグラフェンを成長する工程と、
を有することを特徴とするグラフェンの成長方法。
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
US8633055B2 (en) * | 2011-12-13 | 2014-01-21 | International Business Machines Corporation | Graphene field effect transistor |
JP5825683B2 (ja) * | 2012-07-20 | 2015-12-02 | 日本電信電話株式会社 | 半導体装置の製造方法 |
JP6031948B2 (ja) * | 2012-10-31 | 2016-11-24 | 株式会社デンソー | 半導体素子の製造方法 |
US8664642B1 (en) * | 2013-03-15 | 2014-03-04 | Solan, LLC | Nonplanar graphite-based devices having multiple bandgaps |
KR102263062B1 (ko) | 2014-09-23 | 2021-06-09 | 삼성전자주식회사 | 핀 타입 그래핀 소자 |
CN105810587B (zh) * | 2014-12-31 | 2019-07-12 | 清华大学 | N型薄膜晶体管的制备方法 |
CN105810748B (zh) * | 2014-12-31 | 2018-12-21 | 清华大学 | N型薄膜晶体管 |
EP3136443A1 (en) * | 2015-08-28 | 2017-03-01 | Nokia Technologies Oy | A method for forming apparatus comprising two dimensional material |
US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269140A (ja) * | 1999-03-16 | 2000-09-29 | Sony Corp | 半導体層の形成方法及び半導体装置の製造方法 |
JP2005183635A (ja) * | 2003-12-18 | 2005-07-07 | Seiko Epson Corp | 成膜方法、膜、電子部品および電子機器 |
JP2009164432A (ja) * | 2008-01-08 | 2009-07-23 | Fujitsu Ltd | 半導体装置の製造方法、半導体装置および配線構造体 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3000035B2 (ja) | 1993-03-24 | 2000-01-17 | 科学技術振興事業団 | グラファイト薄膜の形成方法 |
JP3044683B2 (ja) | 1995-03-17 | 2000-05-22 | 科学技術振興事業団 | グラファイト層の形成方法、該方法によって形成されたグラファイト層を有するx線光学素子及びx線光学素子の製造方法 |
EP0758028B1 (en) | 1995-07-10 | 2002-09-11 | Research Development Corporation Of Japan | Process of producing graphite fiber |
JP2973352B2 (ja) | 1995-07-10 | 1999-11-08 | 科学技術振興事業団 | グラファイトファイバーの作成方法 |
US20040018139A1 (en) * | 2000-09-25 | 2004-01-29 | Xidex Corporation | Nanotube apparatus |
US6905613B2 (en) * | 2001-07-10 | 2005-06-14 | Honeywell International Inc. | Use of an organic dielectric as a sacrificial layer |
US7181958B2 (en) * | 2003-12-15 | 2007-02-27 | University Of South Florida | High aspect ratio tip atomic force microscopy cantilevers and method of manufacture |
JP4456891B2 (ja) * | 2004-03-01 | 2010-04-28 | 株式会社アルバック | カソード基板及びその作製方法 |
US20060057388A1 (en) * | 2004-09-10 | 2006-03-16 | Sungho Jin | Aligned and open-ended nanotube structure and method for making the same |
US20090320991A1 (en) * | 2005-09-30 | 2009-12-31 | Paul Boyle | Methods of synthesis of nanotubes and uses thereof |
KR100718112B1 (ko) * | 2005-11-02 | 2007-05-14 | 삼성에스디아이 주식회사 | 탄소나노튜브를 이용한 수직 배선구조 및 그 제조방법 |
US20070148963A1 (en) * | 2005-12-27 | 2007-06-28 | The Hong Kong University Of Science And Technology | Semiconductor devices incorporating carbon nanotubes and composites thereof |
KR100674144B1 (ko) * | 2006-01-05 | 2007-01-29 | 한국과학기술원 | 탄소 나노 튜브를 이용한 상변화 메모리 및 이의 제조 방법 |
US20120132534A1 (en) * | 2006-08-01 | 2012-05-31 | The Board Of Regents Of The Nev. Sys. Of Higher Ed On Behalf Of The Unlv | Growth of nanotubes from patterned and ordered nanoparticles |
WO2008023399A1 (fr) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | NANOTUBES DE CARBONE SEMICONDUCTEURS DE TYPE n, PROCÉDÉ DE PRODUCTION DE CEUX-CI, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIFS SEMICONDUCTEURS |
DE102007050843A1 (de) * | 2006-10-26 | 2008-05-21 | Samsung Electronics Co., Ltd., Suwon | Integrierte Schaltung mit Kohlenstoffnanoröhren und Verfahren zu deren Herstellung unter Verwendung von geschützten Katalysatorschichten |
KR101443222B1 (ko) * | 2007-09-18 | 2014-09-19 | 삼성전자주식회사 | 그라펜 패턴 및 그의 형성방법 |
KR101443219B1 (ko) * | 2007-12-17 | 2014-09-19 | 삼성전자주식회사 | 그라펜 쉘의 제조방법 및 이로부터 제조된 그라펜 쉘 |
US7948042B2 (en) * | 2008-03-03 | 2011-05-24 | The Regents Of The University Of California | Suspended structures |
US8961757B2 (en) * | 2008-03-18 | 2015-02-24 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Nanopore and carbon nanotube based DNA sequencer |
US8043687B2 (en) * | 2008-07-02 | 2011-10-25 | Hewlett-Packard Development Company, L.P. | Structure including a graphene layer and method for forming the same |
US20100132771A1 (en) * | 2008-10-06 | 2010-06-03 | The Regents Of The University Of California | 3D Carbon Nanotubes Membrane as a Solar Energy Absorbing Layer |
WO2010065517A1 (en) * | 2008-12-01 | 2010-06-10 | The Trustees Of Columbia University In The City Of New York | Electromechanical devices and methods for fabrication of the same |
WO2010065518A1 (en) * | 2008-12-01 | 2010-06-10 | The Trustees Of Columbia University In The City Of New York | Methods for graphene-assisted fabrication of micro- and nanoscale structures and devices featuring the same |
US8309438B2 (en) * | 2009-03-03 | 2012-11-13 | Board Of Regents, The University Of Texas System | Synthesizing graphene from metal-carbon solutions using ion implantation |
KR101095784B1 (ko) * | 2009-07-03 | 2011-12-21 | 주식회사 하이닉스반도체 | 반도체 기억 장치 및 그의 제조 방법 |
EP2500947B1 (en) * | 2009-11-13 | 2018-10-24 | Fujitsu Limited | A method of manufacturing a semiconductor device |
US8106383B2 (en) * | 2009-11-13 | 2012-01-31 | International Business Machines Corporation | Self-aligned graphene transistor |
CN101710588B (zh) * | 2009-12-08 | 2012-03-21 | 北京大学 | 一种碳基场效应晶体管的顶栅介质及其制备方法 |
US8633055B2 (en) * | 2011-12-13 | 2014-01-21 | International Business Machines Corporation | Graphene field effect transistor |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269140A (ja) * | 1999-03-16 | 2000-09-29 | Sony Corp | 半導体層の形成方法及び半導体装置の製造方法 |
JP2005183635A (ja) * | 2003-12-18 | 2005-07-07 | Seiko Epson Corp | 成膜方法、膜、電子部品および電子機器 |
JP2009164432A (ja) * | 2008-01-08 | 2009-07-23 | Fujitsu Ltd | 半導体装置の製造方法、半導体装置および配線構造体 |
Non-Patent Citations (2)
Title |
---|
DAIYU KONDO ET AL.: "Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without", APPLIED PHYSICS EXPRESS, vol. Vol.3, p.025102, JPN6014014533, February 2010 (2010-02-01), JP, ISSN: 0002786123 * |
MARK P. LEVENDORF ET AL.: "Transfer-Free Batch Fabrication of Single Layer Graphene Transistors", NANO LETTERS, vol. Vol.9, pp.4479-4483, JPN6014014534, October 2009 (2009-10-01), US, ISSN: 0002786122 * |
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US20140106514A1 (en) | 2014-04-17 |
WO2012017533A1 (ja) | 2012-02-09 |
JP5590125B2 (ja) | 2014-09-17 |
EP2602830A4 (en) | 2017-03-22 |
US8642410B2 (en) | 2014-02-04 |
CN103109372A (zh) | 2013-05-15 |
US20130143374A1 (en) | 2013-06-06 |
US8975113B2 (en) | 2015-03-10 |
EP2602830A1 (en) | 2013-06-12 |
CN103109372B (zh) | 2015-12-02 |
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