JPWO2011108116A1 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JPWO2011108116A1 JPWO2011108116A1 JP2012502951A JP2012502951A JPWO2011108116A1 JP WO2011108116 A1 JPWO2011108116 A1 JP WO2011108116A1 JP 2012502951 A JP2012502951 A JP 2012502951A JP 2012502951 A JP2012502951 A JP 2012502951A JP WO2011108116 A1 JPWO2011108116 A1 JP WO2011108116A1
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- semiconductor layer
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- solar cell
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- amorphous selenium
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- 239000004065 semiconductor Substances 0.000 claims abstract description 211
- 239000011669 selenium Substances 0.000 claims abstract description 82
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 64
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 39
- 239000011780 sodium chloride Substances 0.000 claims abstract description 32
- 239000000460 chlorine Substances 0.000 claims abstract description 30
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 27
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000007864 aqueous solution Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 202
- 238000007740 vapor deposition Methods 0.000 claims description 29
- 150000004770 chalcogenides Chemical class 0.000 claims description 28
- 239000002344 surface layer Substances 0.000 claims description 28
- 229910052714 tellurium Inorganic materials 0.000 claims description 28
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 28
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 238000005868 electrolysis reaction Methods 0.000 claims description 17
- 230000009471 action Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 27
- 239000005357 flat glass Substances 0.000 abstract description 15
- -1 arsenic selenide Chemical class 0.000 abstract description 14
- 238000000151 deposition Methods 0.000 abstract description 10
- 238000005520 cutting process Methods 0.000 abstract description 3
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 abstract description 2
- 125000004429 atom Chemical group 0.000 description 30
- 239000000243 solution Substances 0.000 description 18
- 238000010248 power generation Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011888 foil Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001804 chlorine Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 238000002390 rotary evaporation Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- QDOSJNSYIUHXQG-UHFFFAOYSA-N [Mn].[Cd] Chemical compound [Mn].[Cd] QDOSJNSYIUHXQG-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
CdZnTe(カドミウムジンクテルライド), CdMnTe(カドミウムマンガンテルライド)などが挙げられる。
請求項12に係る太陽電池の製造方法においては、塩化ナトリウム水溶液を電気分解して、基板上のアモルファスセレンの表層部に塩素を添加したn型半導体層を形成する工程と、前記n型半導体層の上に、アモルファスセレンに砒素を添加したp型半導体層を例えば蒸着により積層形成する工程とを備えたことを特徴とする。
22 ガラス基板
24 p型半導体層
24’ 増感剤(テルル)添加p型半導体層
26 n型半導体層
28 窓ガラス
30 回転式基板ホルダー
32 蒸着源
38 隙間
40 アルミホイル
42 試料
44 ガラス板
46 検流計
48 ペルチェ素子
50 アモルファスセレン薄膜
Claims (17)
- アモルファスセレンに砒素を添加して得られたp型半導体層と、前記p型半導体層の表層部に塩素を添加して得られたn型半導体層とを備えたことを特徴とする太陽電池。
- 前記p型半導体層は、アモルファスセレンに砒素およびテルルを添加して得られたことを特徴とする請求項1記載の太陽電池。
- アモルファスセレンの表層部に塩素を添加して得られたn型半導体層の上に、アモルファスセレンに砒素を添加して得られたp型半導体層が積層形成されたことを特徴とする太陽電池。
- 前記p型半導体層は、アモルファスセレンに砒素およびテルルを添加して得られたことを特徴とする請求項3記載の太陽電池。
- 母材であるワイドギャップカルコゲナイド半導体にアクセプター原子を添加して得られたp型半導体層と、前記p型半導体層の表層部にドナー原子を添加して得られたn型半導体層とを備えたことを特徴とする太陽電池。
- 前記p型半導体層は、ワイドギャップカルコゲナイド半導体にアクセプター原子および該p型半導体層のバンドギャップを狭める作用を持つ増感剤を添加して得られたことを特徴とする請求項5記載の太陽電池。
- 母材であるワイドギャップカルコゲナイド半導体にドナー原子を添加して得られたn型半導体層の上に、ワイドギャップカルコゲナイド半導体にアクセプター原子を添加して得られたp型半導体層が積層形成されたことを特徴とする太陽電池。
- 前記p型半導体層は、ワイドギャップカルコゲナイド半導体にドナー原子および該p型半導体層のバンドギャップを狭める作用を持つ増感剤を添加して得られたことを特徴とする請求項7記載の太陽電池。
- 前記p型半導体層と前記n型半導体層で構成されたpn接合体(ダイオード)が複数重ねて構成されたことを特徴とする請求項1〜8のいずれかに記載の太陽電池。
- アモルファスセレンに砒素を添加したp型半導体層を例えば蒸着により基板上に形成する工程と、前記p型半導体層を陽極として塩化ナトリウム水溶液を電気分解して、該p型半導体層の表層部に塩素を添加したn型半導体層を積層形成する工程とを備えたことを特徴とする太陽電池の製造方法。
- 前記p型半導体層形成工程では、アモルファスセレンに砒素およびテルルを添加することを特徴とする請求項10記載の太陽電池の製造方法。
- 塩化ナトリウム水溶液を電気分解して、基板上のアモルファスセレンの表層部に塩素を添加したn型半導体層を形成する工程と、前記n型半導体層の上に、アモルファスセレンに砒素を添加したp型半導体層を例えば蒸着により積層形成する工程とを備えたことを特徴とする太陽電池の製造方法。
- 前記p型半導体層形成工程では、アモルファスセレンに砒素およびテルルを添加することを特徴とする請求項12記載の太陽電池の製造方法。
- 母剤であるワイドギャップカルコゲナイド半導体にアクセプター原子を添加したp型半導体層を例えば蒸着により基板上に形成する工程と、ドナー原子を含む物質を塗布あるいは蒸着したものに熱を加え拡散し、または前記p型半導体層を陽極としてドナー原子を含む物質を電気分解して、前記p型半導体層の表層部にドナー原子を添加したn型半導体層を形成する工程とを備えたことを特徴とする太陽電池の製造方法。
- 前記p型半導体層形成工程では、アクセプター原子およびp型半導体層のバンドギャップを狭める作用を持つ増感剤を添加したn型半導体層を形成することを特徴とする請求項14記載の太陽電池の製造方法。
- ドナー原子を含む物質を塗布あるいは蒸着したものに熱を加え拡散し、またはドナー原子を含む物質を電気分解して、基板上のワイドギャップカルコゲナイド半導体の表層部にドナー原子を添加してn型半導体層を形成する工程と、前記n型半導体層の上に、ワイドギャップカルコゲナイド半導体にアクセプター原子を添加したp型半導体層を例えば蒸着により積層形成する工程とを備えたことを特徴とする太陽電池の製造方法。
- 前記p型半導体層形成工程では、ワイドギャップカルコゲナイド半導体にアクセプター原子およびp型半導体層のバンドギャップを狭める作用を持つ増感剤を添加したp型半導体層を形成することを特徴とする請求項16記載の太陽電池の製造方法。
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PCT/JP2010/053672 WO2011108116A1 (ja) | 2010-03-05 | 2010-03-05 | 太陽電池 |
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JPWO2011108116A1 true JPWO2011108116A1 (ja) | 2013-06-20 |
JP5521030B2 JP5521030B2 (ja) | 2014-06-11 |
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WO (1) | WO2011108116A1 (ja) |
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JP5984425B2 (ja) * | 2012-02-28 | 2016-09-06 | 大阪瓦斯株式会社 | 簡便に製造可能な光電変換装置 |
US10651334B2 (en) * | 2017-02-14 | 2020-05-12 | International Business Machines Corporation | Semitransparent chalcogen solar cell |
US10651408B2 (en) * | 2017-02-14 | 2020-05-12 | International Business Machines Corporation | Selenium-fullerene heterojunction solar cell |
CN113937169B (zh) * | 2021-09-25 | 2024-04-19 | 中建材玻璃新材料研究院集团有限公司 | 一种用于bipv的铜铟镓硒太阳能电池 |
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JPS57197876A (en) * | 1981-05-29 | 1982-12-04 | Nippon Hoso Kyokai <Nhk> | Photoconductive film |
JP3332487B2 (ja) * | 1993-07-30 | 2002-10-07 | 三洋電機株式会社 | 光起電力装置の製造方法 |
JP3665584B2 (ja) * | 2001-03-27 | 2005-06-29 | 株式会社東芝 | X線平面検出器 |
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JP5521030B2 (ja) | 2014-06-11 |
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