JPWO2011105567A1 - ハニカム構造体 - Google Patents
ハニカム構造体 Download PDFInfo
- Publication number
- JPWO2011105567A1 JPWO2011105567A1 JP2012501888A JP2012501888A JPWO2011105567A1 JP WO2011105567 A1 JPWO2011105567 A1 JP WO2011105567A1 JP 2012501888 A JP2012501888 A JP 2012501888A JP 2012501888 A JP2012501888 A JP 2012501888A JP WO2011105567 A1 JPWO2011105567 A1 JP WO2011105567A1
- Authority
- JP
- Japan
- Prior art keywords
- honeycomb structure
- silicon carbide
- electrode
- silicon
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 160
- 239000002245 particle Substances 0.000 claims abstract description 127
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 123
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 103
- 239000010703 silicon Substances 0.000 claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 85
- 239000010410 layer Substances 0.000 claims description 89
- 239000011148 porous material Substances 0.000 claims description 38
- 238000005192 partition Methods 0.000 claims description 31
- 239000011230 binding agent Substances 0.000 claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 8
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- 239000012530 fluid Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
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- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 230000002745 absorbent Effects 0.000 description 1
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- 238000002485 combustion reaction Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
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- 239000000741 silica gel Substances 0.000 description 1
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Abstract
Description
本発明のハニカム構造体の一の実施形態は、図1〜図3,図6に示すように、流体の流路となる一方の端面11から他方の端面12まで延びる複数のセル2を区画形成する多孔質の隔壁1と、最外周に位置する(隔壁1全体の外周を取り囲むように配設された)外周壁3とを有する筒状のハニカム構造部(基材)4と、ハニカム構造部4の側面に配設された一対の側面電極23,23と、ハニカム構造部4と側面電極23との間に1層以上の中間層15を備えるものである。そして、ハニカム構造部4が、骨材としての炭化珪素粒子(炭化珪素)、及び炭化珪素粒子を結合させる結合材としての珪素を含有する。骨材としての炭化珪素粒子の平均粒子径が3〜40μmであり、珪素(Si)と炭化珪素(SiC)の比率(Si/SiC)が10/90〜40/60である。また、側面電極23は、炭化珪素粒子の平均粒子径が10〜70μm、珪素(Si)と炭化珪素(SiC)の比率(Si/SiC)が20/80〜50/50である。さらに、中間層15は、炭化珪素粒子の平均粒子径がハニカム構造部4と側面電極23の間で、珪素(Si)と炭化珪素(SiC)の比率がハニカム構造部4と側面電極23の間である。そして、ハニカム構造体100の側面電極23,23間の電気抵抗が2〜100Ωである。
次に、本発明のハニカム構造体の一の実施形態の製造方法について説明する。
(ハニカム構造部)
表1に記載のSi原料とSiC原料の合計100質量%に対し、吸水性樹脂1質量%、ヒドロキシプロピルメチルセルロース7質量%、水35質量%を混合、混練し、坏土とした。真空土練機にて成形用坏土とし、押出成形機にて成形し、乾燥、両端面を切断し乾燥体を得た。乾燥体を550℃で3時間脱脂後、1450℃のアルゴン中で2時間焼成した。得られたハニカム構造部4のサイズは直径93mm、長さ100mmで気孔率、気孔径(平均細孔径)、体積電気抵抗、リブ厚(隔壁の厚さ)、セル数(セル密度)は表1に記載の通りであった。
表1に記載のSi原料とSiC原料の合計100質量%に対し、ヒドロキシプロピルメチルセルロース0.4質量%、水300質量%を縦型混合機で混合し、スラリーを得た。焼成後のハニカム構造部4の側面の対極2箇所に75mm幅、厚さ0.1mmとなるように、得られたスラリーをスプレーで吹き付け、70℃で乾燥し、中間層15を形成した。
表2に記載のSi原料とSiC原料の合計100質量%に対し、ヒドロキシプロピルメチルセルロース0.4質量%、界面活性剤0.5質量%、グリセリン7質量%、水22質量%を縦型混合機にて混合し、電極部形成材料としてのスラリーを得た。ハニカム構造部4の上に吹き付けた中間層15の上に、得られたスラリーを側面の対極2箇所に60mm幅、厚さ2mmに塗布し、70℃で乾燥し電極部(ペースト電極)21を形成した。
次に、電極と同じSi原料とSiC原料を用いてこれに、ヒドロキシプロピルメチルセルロース4質量%を添加すると共に、水28質量%を添加して、混合した。混合物を混練して電極端子突起部形成原料とした。電極端子突起部形成原料を、真空土練機を用いて坏土とした。得られた坏土を、真空土練機を用いて成形し、電極端子突起部に加工し、乾燥して、電極端子突起部形成用部材を得た。また、乾燥条件は、70℃とした。板状に相当する部分は、3mm×12mm×15mmの大きさとした。また、突起部に相当する部分は、底面の直径が7mmで、中心軸方向の長さが10mmの円柱状とした。電極端子突起部形成用部材は2つ作製した。
電極端子突起部22を取り付けた焼成前の実施例6の側面電極に実施例6と同じ中間層15用のスラリーをスプレーで吹きつけ、70℃で乾燥した。次いで、脱脂し、焼成し、更に酸化処理してハニカム構造体を得た。脱脂の条件は、550℃で3時間とした。焼成の条件は、アルゴン雰囲気下で、1450℃、2時間とした。酸化処理の条件は、1300℃で1時間とした。構造体抵抗は、18Ω、発熱性は良好であった。
実施例と同様に、表1〜2に示す構成の比較例を作製した。
測定対象と同じ材質で10mm×10mm×50mmの試験片を作成した(つまり、ハニカム構造部4の体積電気抵抗を測定する場合にはハニカム構造部4と同じ材質で、側面電極23の体積抵抗を測定する場合には側面電極23と同じ材質で、それぞれ試験片を作製した。なお、側面電極23である電極部21(ペースト電極)と電極端子突起部22は、同じ材質で作製した。)。試験片の両端部全面に銀ペーストを塗布し、配線して通電できるようにした。試験片に電圧印加電流測定装置をつなぎ印加した。試験片中央部に熱伝対を設置し、電圧印加時の試験片温度の経時変化をレコーダーにて確認した。600V印加し、試験片温度が400℃になった時点で流れた電流値及び電圧値と、試験片寸法から体積電気抵抗を算出した。
ハニカム構造体100の中心部に熱電対を設置し、ハニカム構造体100の中心部の温度をレコーダーで記録できるようにした。そして、ハニカム構造体100の2つの電極端子突起部22のそれぞれに電圧印加電流測定装置を繋いで、600Vの電圧を印加した。そして、ハニカム構造体100の中心部の温度が400℃になったときの電圧印加電流測定装置の電流値を読み取った。そして、電圧(600V)及び電流値よりハニカム構造体100の電気抵抗(側面電極23,23間の電気抵抗)を求めた。また、全体の発熱状態をサーモグラフィで観察し、発熱の温度分布を観察した。表1及び表2に実施例及び比較例の構成、及び試験結果を示す。なお、表2の発熱性は、ハニカム構造体100の中心部の温度が400℃になったときのハニカム端面のサーモグラフィ温度差が100℃未満のときを○、100℃以上のときを×とした。
比較例1は、側面電極の電極部21とハニカム構造部4の界面抵抗が大きいため、電極部21での発熱が大きく、発熱が不均一であった。比較例2は、ハニカム構造部4の電気抵抗が低すぎ、電圧を上げることができず、均一な発熱が得られなかった。比較例3は、ハニカム構造部4の電気抵抗が高すぎ、電流が十分流れず、所定時間内に昇温することができなかった。中間層15を形成した実施例1〜16は、電圧を制御することにより、略均一に、所定時間内に昇温することができた。
Claims (4)
- 流体の流路となる一方の端面から他方の端面まで延びる複数のセルを区画形成する多孔質の隔壁と、最外周に位置する外周壁とを有する筒状のハニカム構造部と、前記ハニカム構造部の側面に配設された一対の側面電極と、前記ハニカム構造部と前記側面電極との間に1層以上の中間層を備え、
前記ハニカム構造部が、骨材としての炭化珪素粒子、及び前記炭化珪素粒子を結合させる結合材としての珪素を含有し、
前記ハニカム構造部の前記骨材としての炭化珪素粒子の平均粒子径が3〜40μm、珪素(Si)と炭化珪素(SiC)の比率(Si/SiC)が10/90〜40/60であり、
前記側面電極は、炭化珪素粒子の平均粒子径が10〜70μm、珪素(Si)と炭化珪素(SiC)の比率(Si/SiC)が20/80〜50/50であり、
前記中間層は、炭化珪素粒子の平均粒子径が前記ハニカム構造部と前記側面電極の間で、珪素(Si)と炭化珪素(SiC)の比率が前記ハニカム構造部と前記側面電極の間であり、
前記側面電極間の電気抵抗が2〜100Ωであるハニカム構造体。 - 前記ハニカム構造部の気孔率が30〜60%、平均細孔径が2〜20μm、隔壁の厚さが50〜200μm、セル密度が50〜150セル/cm2である請求項1に記載のハニカム構造体。
- 前記側面電極、及び/または前記中間層にアルミニウム、モリブデン、錫、ジルコニウムのうち少なくとも1種類を含む請求項1または2に記載のハニカム構造体。
- 前記側面電極の表面に、前記中間層と同じ組成の表面層を備える請求項1〜3のいずれか1項に記載のハニカム構造体。
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