JPWO2011105538A1 - シリコン粉末を用いた太陽電池セルの製造方法 - Google Patents
シリコン粉末を用いた太陽電池セルの製造方法 Download PDFInfo
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- JPWO2011105538A1 JPWO2011105538A1 JP2012501876A JP2012501876A JPWO2011105538A1 JP WO2011105538 A1 JPWO2011105538 A1 JP WO2011105538A1 JP 2012501876 A JP2012501876 A JP 2012501876A JP 2012501876 A JP2012501876 A JP 2012501876A JP WO2011105538 A1 JPWO2011105538 A1 JP WO2011105538A1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 239000011863 silicon-based powder Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 77
- 239000000843 powder Substances 0.000 claims abstract description 36
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000011888 foil Substances 0.000 claims description 45
- 238000001816 cooling Methods 0.000 claims description 11
- 239000011856 silicon-based particle Substances 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 description 8
- 238000009751 slip forming Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Photovoltaic Devices (AREA)
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Abstract
Description
Claims (9)
- 第1導電型のシリコン粉末を準備し、
前記粉末を層状に配置してシリコン粉末層を形成し、
シリコンの融点以上に加熱することで、前記粉末層を溶融し、冷却することで、第1導電型のシリコン層を形成し、
第2導電型のシリコン粉末を準備し、
前記粉末を前記第1導電型のシリコン層上に層状に配置して第2導電型のシリコン粉末層を形成し、
シリコンの融点以上に加熱することで、前記粉末層を溶融し、冷却することで、第2導電型のシリコン層を形成する、太陽電池セルの製造方法。 - 絶縁箔に接合した電極箔上に前記シリコン粉末層を形成し、
プレート内部に水冷配管と真空吸着配管とを備え、該真空吸着配管により前記絶縁箔と前記電極箔を吸着しつつ、前記水冷配管中の冷却水により前記絶縁箔と前記電極箔を冷却しつつ、前記シリコン粉末層の加熱を前記プレート上で行う、請求項1に記載の太陽電池セルの製造方法。 - 前記加熱はヒータを用いて前記粉末層を予備加熱し、さらにレーザ照射により溶融する、請求項1に記載の太陽電池セルの製造方法。
- 第1のシリコン粉末を準備し、
前記粉末を層状に配置してシリコン粉末層を形成し、
熱と圧力を加えることで、前記粉末層を圧縮しつつ焼成し、第1導電型のシリコン層となし、
第2のシリコン粉末を準備し、
前記粉末を前記第1導電型のシリコン層上に層状に配置して第2のシリコン粉末層を形成し、
熱と圧力を加えることで、前記粉末層を圧縮しつつ焼成し、第2導電型のシリコン層となす、太陽電池セルの製造方法。 - 前記シリコン粉末の粒子は0.1−10μmの粒径を有する、請求項4に記載の太陽電池セルの製造方法。
- 前記熱はヒータを用いて発生し、前記粉末層を600−1200℃に加熱する、請求項4に記載の太陽電池セルの製造方法。
- 前記圧力は圧延ローラを用いて発生し、熱を加えた状態の前記粉末層を加圧しつつ焼成する、請求項4に記載の太陽電池セルの製造方法。
- 前記粉末のシリコン粒子は予めP型またはN型にドープしたものである、請求項4に記載の太陽電池セルの製造方法。
- 前記粉末のシリコン粒子はノンドープであり、ドーパントを加えて加圧焼成の過程で、P型またはN型にドープする、請求項4に記載の太陽電池セルの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012501876A JP5761172B2 (ja) | 2010-02-25 | 2011-02-25 | シリコン粉末を用いた太陽電池セルの製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010039497 | 2010-02-25 | ||
JP2010039497 | 2010-02-25 | ||
PCT/JP2011/054255 WO2011105538A1 (ja) | 2010-02-25 | 2011-02-25 | シリコン粉末を用いた太陽電池セルの製造方法 |
JP2012501876A JP5761172B2 (ja) | 2010-02-25 | 2011-02-25 | シリコン粉末を用いた太陽電池セルの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2011105538A1 true JPWO2011105538A1 (ja) | 2013-06-20 |
JP5761172B2 JP5761172B2 (ja) | 2015-08-12 |
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JP2012501876A Expired - Fee Related JP5761172B2 (ja) | 2010-02-25 | 2011-02-25 | シリコン粉末を用いた太陽電池セルの製造方法 |
Country Status (5)
Country | Link |
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US (1) | US8603850B2 (ja) |
EP (1) | EP2541616B1 (ja) |
JP (1) | JP5761172B2 (ja) |
CN (1) | CN102834926B (ja) |
WO (1) | WO2011105538A1 (ja) |
Families Citing this family (2)
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US11764315B2 (en) * | 2020-09-16 | 2023-09-19 | Maxeon Solar Pte. Ltd. | Solar cell separation with edge coating |
CN115224238B (zh) * | 2022-09-20 | 2022-11-29 | 河南锂动电源有限公司 | 一种锂离子电池负极极片及其制作方法和激光碳化装置 |
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DE3035563C2 (de) * | 1980-09-20 | 1984-10-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer polykristallinen Silizium-Solarzelle |
DE3536743C2 (de) * | 1985-10-15 | 1994-11-10 | Siemens Ag | Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen |
JPH06268242A (ja) * | 1993-03-17 | 1994-09-22 | Matsushita Electric Ind Co Ltd | シリコン基板の製造方法および結晶質シリコン太陽電池 |
ATE175625T1 (de) * | 1993-06-11 | 1999-01-15 | Isovolta | Verfahren zur herstellung fotovoltaischer module sowie eine vorrichtung zur durchführung dieses verfahrens |
DE19652818A1 (de) * | 1996-12-18 | 1998-07-02 | Priesemuth W | Verfahren zum Herstellen einer Solarzelle sowie Solarzelle |
JP2001516324A (ja) * | 1997-03-04 | 2001-09-25 | アストロパワー,インコーポレイテッド | 柱状結晶粒状多結晶太陽電池基材及び改良された製造方法 |
JP2001250967A (ja) * | 2000-03-03 | 2001-09-14 | Canon Inc | 光起電力素子及び光起電力素子の製造方法 |
JP2002151713A (ja) * | 2000-08-29 | 2002-05-24 | Kyocera Corp | 太陽電池素子基板及びその製造方法 |
JP4140247B2 (ja) * | 2002-03-04 | 2008-08-27 | 独立行政法人産業技術総合研究所 | シート型β−FeSi2素子 |
DE10239845C1 (de) * | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul |
US8192648B2 (en) * | 2003-04-14 | 2012-06-05 | S'tile | Method for forming a sintered semiconductor material |
US8405183B2 (en) * | 2003-04-14 | 2013-03-26 | S'Tile Pole des Eco-Industries | Semiconductor structure |
US20080305619A1 (en) * | 2007-05-03 | 2008-12-11 | Francesco Lemmi | Method of forming group iv semiconductor junctions using laser processing |
JP4990738B2 (ja) * | 2007-11-09 | 2012-08-01 | 株式会社ブリヂストン | 太陽電池の製造方法 |
US20090208770A1 (en) * | 2008-02-14 | 2009-08-20 | Ralf Jonczyk | Semiconductor sheets and methods for fabricating the same |
JP5042101B2 (ja) * | 2008-03-28 | 2012-10-03 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
US20090280336A1 (en) * | 2008-05-08 | 2009-11-12 | Ralf Jonczyk | Semiconductor sheets and methods of fabricating the same |
JP5614922B2 (ja) | 2008-08-01 | 2014-10-29 | キヤノン株式会社 | 撮影装置、x線画像診断装置ならびにそれらの制御方法 |
JP2010206161A (ja) * | 2009-02-04 | 2010-09-16 | Sony Corp | 成膜方法および半導体装置の製造方法 |
JP2011116616A (ja) | 2009-10-29 | 2011-06-16 | Sanki Dengyo Kk | 回転ルツボ装置を用いた高純度シリコンの製造方法 |
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2011
- 2011-02-25 WO PCT/JP2011/054255 patent/WO2011105538A1/ja active Application Filing
- 2011-02-25 EP EP11747494.0A patent/EP2541616B1/en not_active Not-in-force
- 2011-02-25 JP JP2012501876A patent/JP5761172B2/ja not_active Expired - Fee Related
- 2011-02-25 CN CN201180010870.1A patent/CN102834926B/zh not_active Expired - Fee Related
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2012
- 2012-08-22 US US13/591,628 patent/US8603850B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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EP2541616A4 (en) | 2014-01-29 |
JP5761172B2 (ja) | 2015-08-12 |
CN102834926A (zh) | 2012-12-19 |
EP2541616A1 (en) | 2013-01-02 |
CN102834926B (zh) | 2015-07-22 |
EP2541616B1 (en) | 2016-05-04 |
WO2011105538A1 (ja) | 2011-09-01 |
US8603850B2 (en) | 2013-12-10 |
US20130045559A1 (en) | 2013-02-21 |
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