JPWO2010128611A1 - 半導体封止用フィルム状接着剤、半導体装置及びその製造方法 - Google Patents
半導体封止用フィルム状接着剤、半導体装置及びその製造方法 Download PDFInfo
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- JPWO2010128611A1 JPWO2010128611A1 JP2011512322A JP2011512322A JPWO2010128611A1 JP WO2010128611 A1 JPWO2010128611 A1 JP WO2010128611A1 JP 2011512322 A JP2011512322 A JP 2011512322A JP 2011512322 A JP2011512322 A JP 2011512322A JP WO2010128611 A1 JPWO2010128611 A1 JP WO2010128611A1
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- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Chemical & Material Sciences (AREA)
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- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
(a)エポキシ樹脂は、分子内に2個以上のエポキシ基を有するものであれば特に制限されない。エポキシ樹脂として、例えば、ビスフェノールA型、ビスフェノールF型、ナフタレン型、フェノールノボラック型、クレゾールノボラック型、フェノールアラルキル型、ビフェニル型、トリフェニルメタン型、ジシクロペンタジエン型及び各種多官能エポキシ樹脂を使用することができる。これらのエポキシ樹脂は1種を単独で又は2種以上を組み合わせて用いることができる。
(b)触媒型硬化剤は、エポキシ樹脂に対する反応機構が上記その他の硬化剤とは異なる成分である。(b)触媒型硬化剤として、例えば、イミダゾール類、ホスフィン類等が挙げられる。この中でも、より短時間での接続を可能とする観点から、イミダゾール類が好ましい。
フィルム状接着剤は、(c)重量平均分子量10000以上の高分子成分(以下、便宜上「(c)高分子成分」という。)を含むことが好ましい。(c)高分子成分は、(a)エポキシ樹脂とは異なる樹脂である。(c)高分子成分として、例えば、(a)エポキシ樹脂とは異なるエポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリカルボジイミド樹脂、シアネートエステル樹脂、アクリル樹脂、ポリエステル樹脂、ポリエチレン樹脂、ポリエーテルスルホン樹脂、ポリエーテルイミド樹脂、ポリビニルアセタール樹脂、ウレタン樹脂、アクリルゴムが挙げられる。その中でも、耐熱性及びフィルム形成性に優れるフィルム状接着剤を得る観点から、(a)エポキシ樹脂とは異なるエポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、シアネートエステル樹脂、ポリカルボジイミド樹脂が好ましく、エポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂がより好ましい。これらの高分子成分は1種を単独で又は2種以上を組み合わせて、或いは2種以上の共重合体として使用することができる。(c)高分子成分の重量平均分子量は、10000〜1000000であることが好ましく、20000〜900000であることがより好ましく、30000〜800000であることが更に好ましい。(c)高分子成分の重量平均分子量が10000未満の場合、粘度の制御がし難くなり、またフィルム形成性が低下する傾向があり、1000000を超えると、接続信頼性、埋め込み性が低下する傾向がある。
本発明に係るフィルム状接着剤において、(c)高分子成分は、(d)ポリイミド樹脂を含むことが好ましい。(d)ポリイミド樹脂は、例えば、テトラカルボン酸二無水物とジアミンとを公知の方法で縮合反応させて得ることができる。より具体的には、有機溶媒中で、テトラカルボン酸二無水物とジアミンとを等モルの比率又はほぼ等モルの比率で配合し(各成分の添加順序は任意)、80℃以下、好ましくは0〜60℃で付加反応させる。反応が進行するにつれ反応液の粘度が徐々に上昇し、ポリイミドの前駆体であるポリアミド酸が生成する。なお、フィルム状接着剤の諸特性の低下を抑えるため、上記のテトラカルボン酸二無水物は無水酢酸で再結晶精製処理を施しておくことが好ましい。
図1は、本発明の好適な実施形態に係る半導体装置の製造方法の第1工程を模式的に示す工程断面図である。第1工程では、まず、半導体チップ14と基板16との間に、半導体封止用フィルム状接着剤12を介在させる。
図2は、本発明の好適な実施形態に係る半導体装置の製造方法の第2工程を模式的に示す工程断面図である。第2工程では、加圧ヘッド30及びステージ32によって、バンプ15と金属配線18とが対向する方向(矢印A,B方向)に加圧するとともに、300〜450℃の接続温度で0.5〜5秒間加熱する。これによって、バンプ15と金属配線18とが直接接触して電気的に導通するとともに、半導体封止用フィルム状接着剤12は硬化して硬化樹脂22となる。なお、加圧圧力(継続荷重)は、バンプの数、バンプの高さやそのばらつき、バンプ変形量等を考慮して適宜調整することができる。
温度計、攪拌機及び塩化カルシウム管を備えた300mLフラスコに、1,12−ジアミノドデカン2.10g(0.035モル)、ポリエーテルジアミン(BASF社製、商品名:ED2000、分子量:1923)17.31g(0.03モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(信越化学工業社製、商品名:LP−7100)2.61g(0.035モル)及びN−メチル−2−ピロリドン(関東化学社製)150gを仕込み攪拌を行い、ジアミン溶液を調製した。その後、フラスコを氷浴中で冷却しながら、上記ジアミン溶液に、無水酢酸で再結晶精製した4,4’−(4,4’−イソプロピリデンジフェノキシ)ビス(フタル酸二無水物)(ALDRICH社製、商品名:BPADA)15.62g(0.10モル)を少量ずつ添加した。室温(25℃)で8時間反応させた後、キシレン100gを加え、窒素ガスを吹き込みながら180℃で加熱し、水と共にキシレンを共沸除去し、ポリイミド溶液を合成した。得られたポリイミド樹脂のTgは22℃、重量平均分子量(Mw)は47000、SP値(溶解度パラメーター)は10.2であった。
次に、フィルム状接着剤製造用の原材料として、以下の化合物を準備した。
(a)エポキシ樹脂
トリフェノールメタン骨格含有多官能エポキシ樹脂(ジャパンエポキシレジン社製、商品名:EP1032)
(b)触媒型硬化剤
2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加体(四国化成工業社製、商品名:2MAOK−PW)
1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト(四国化成工業社製、商品名:2PZ−CNS)
2−フェニル−4,5−ジヒドロキシメチルイミダゾール(四国化成工業社製、商品名:2PHZ−PW)
テトラフェニルホスホニウムテトラフェニルボレート(東京化成工業株式会社製、商品名:TPPK)
(b’)その他の硬化剤
トリフェノールメタン骨格含有多官能フェノール(明和化成社、商品名:MEH7500)
(d)ポリイミド樹脂
上記合成例1で合成したポリイミド樹脂(以下、「合成ポリイミド」という)
(実施例1)
20mLのガラス製スクリュー管に合成ポリイミド100質量部(固形分換算)、エポキシ樹脂(商品名:EP1032)30質量部、触媒型硬化剤(商品名:2MAOK−PW)5質量部及びN−メチル−2−ピロリドン(関東化学社製)を全体固形分が40%になるように(約200質量部)仕込み、撹拌・脱泡装置「AR−250」(シンキー社製、商品名)で撹拌し・脱泡を行って樹脂ワニスを得た。
使用した原材料の組成を下記の表1に示したように変更したことを除いては、上記の半導体封止用フィルム状接着剤の作製方法と同様にして、半導体封止用フィルム状接着剤を作製した。
作製したフィルム状接着剤を所定のサイズ(10mm×10mm×厚み0.03mm)に切断し、厚み0.12〜0.17mmのカバーガラス(サイズ:18mm×18mm)上に貼付した後、300℃のホットプレート上に載せて、フィルム状接着剤における樹脂発泡の有無をフィルム状接着剤の外観を目視で観察することで調べた。
図3は、ボイド発生率測定用の試料Aの作製方法を説明するための説明図である。まず、作製したフィルム状接着剤12を、所定のサイズ(直径6mm、厚み約0.1mm)に切断して厚み0.7mmのガラスチップ11(サイズ:15mm×15mm)上に貼付した。その後、図3に示すように、厚み0.12〜0.17mmのカバーガラス13(サイズ:18mm×18mm)を被せて、ガラスチップ11、フィルム状接着剤12及びカバーガラス13が順次積層された試料Aを作製した。
ボイド発生率(%)=ボイド発生面積/圧着後のフィルム状接着剤面積×100
図4(A)は接続抵抗の評価に用いた半導体装置を上方(半導体チップ側)から撮影した写真であり、図4(B)は接続抵抗の評価に用いた半導体装置の断面を撮影した写真である。接続抵抗評価用の半導体装置は次の通りにして作製した。
上述の半導体装置のサンプル(図4(A)参照)を、クリーンオーブン(ESPEC製)中、180℃で1時間キュアした。キュア後、サンプルを取り出し、加速寿命試験装置(HIRAYAMA社製、商品名:PL−422R8、条件:110℃/85%RH/100時間/60V印加)に設置し、絶縁抵抗を測定した。評価方法としては、100時間を通して、絶縁抵抗が1×108Ω以上である場合を「A」、絶縁抵抗の最低値が1×108Ω未満である場合を「B」として評価した。
Claims (8)
- (a)エポキシ樹脂と(b)触媒型硬化剤とを含有し、
前記触媒型硬化剤によって活性種となる硬化剤又は前記触媒型硬化剤と反応する硬化剤のいずれも含有しない、半導体封止用フィルム状接着剤。 - (c)重量平均分子量10000以上の高分子成分を更に含有する、請求項1記載の半導体封止用フィルム状接着剤。
- 前記(c)重量平均分子量10000以上の高分子成分が(d)ポリイミド樹脂を含む、請求項2記載の半導体封止用フィルム状接着剤。
- 前記(d)ポリイミド樹脂は、30000以上の重量平均分子量を有し、かつ100℃以下のガラス転移温度を有する、請求項3記載の半導体封止用フィルム状接着剤。
- 前記(b)触媒型硬化剤がイミダゾール類を含む、請求項1〜4のいずれか一項に記載の半導体封止用フィルム状接着剤。
- バンプを有する半導体チップと、金属配線を有する基板とを備える半導体装置の製造方法であって、
前記半導体チップと前記基板とを、請求項1〜5のいずれか一項に記載の半導体封止用フィルム状接着剤を介して前記バンプと前記金属配線とが互いに対向するように配置し、
前記半導体チップと前記基板とを対向する方向に加圧するとともに加熱して前記半導体封止用フィルム状接着剤を硬化させ、前記バンプと前記金属配線とを電気的に接続する接続工程を有する、半導体装置の製造方法。 - 前記接続工程では、前記半導体チップと前記基板とを対向する方向に加圧するとともに300℃以上に加熱して、金を含有する前記バンプとスズめっき層を有する前記金属配線との間に金−スズ共晶を形成し、前記バンプと前記金属配線とを電気的に接続する、請求項6記載の半導体装置の製造方法。
- 請求項6又は7に記載の半導体装置の製造方法によって得られる、半導体装置。
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