JPWO2009051122A1 - 薄膜太陽電池モジュール - Google Patents
薄膜太陽電池モジュール Download PDFInfo
- Publication number
- JPWO2009051122A1 JPWO2009051122A1 JP2009538100A JP2009538100A JPWO2009051122A1 JP WO2009051122 A1 JPWO2009051122 A1 JP WO2009051122A1 JP 2009538100 A JP2009538100 A JP 2009538100A JP 2009538100 A JP2009538100 A JP 2009538100A JP WO2009051122 A1 JPWO2009051122 A1 JP WO2009051122A1
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- cell module
- film solar
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 230000002093 peripheral effect Effects 0.000 claims abstract description 70
- 239000011248 coating agent Substances 0.000 claims abstract description 62
- 239000011521 glass Substances 0.000 claims abstract description 61
- 238000000576 coating method Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000000945 filler Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000005498 polishing Methods 0.000 claims description 16
- 230000002209 hydrophobic effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000011147 inorganic material Substances 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011344 liquid material Substances 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- 238000006056 electrooxidation reaction Methods 0.000 abstract description 24
- 239000010410 layer Substances 0.000 description 120
- 239000010408 film Substances 0.000 description 30
- 238000000926 separation method Methods 0.000 description 24
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910001887 tin oxide Inorganic materials 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000000059 patterning Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000009413 insulation Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000002845 discoloration Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 5
- 229920001709 polysilazane Polymers 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005488 sandblasting Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000005357 flat glass Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007272007 | 2007-10-19 | ||
| JP2007272007 | 2007-10-19 | ||
| JP2007300018 | 2007-11-20 | ||
| JP2007300018 | 2007-11-20 | ||
| PCT/JP2008/068615 WO2009051122A1 (fr) | 2007-10-19 | 2008-10-15 | Module de cellule solaire en couche mince |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2009051122A1 true JPWO2009051122A1 (ja) | 2011-03-03 |
Family
ID=40567384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009538100A Pending JPWO2009051122A1 (ja) | 2007-10-19 | 2008-10-15 | 薄膜太陽電池モジュール |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2009051122A1 (fr) |
| WO (1) | WO2009051122A1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101091475B1 (ko) * | 2009-06-30 | 2011-12-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| KR101072106B1 (ko) * | 2009-10-01 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| DE202011110962U1 (de) * | 2010-10-15 | 2017-11-02 | Wilhelm Stein | Fotovoltaikmodul |
| JP2012209335A (ja) * | 2011-03-29 | 2012-10-25 | Dainippon Printing Co Ltd | 薄膜型太陽電池モジュ−ル用の封止材シート、及び薄膜型太陽電池モジュール |
| JP2016033932A (ja) * | 2012-12-28 | 2016-03-10 | シャープ株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
| KR101428419B1 (ko) | 2013-08-30 | 2014-08-08 | 주식회사 포스코 | 절연특성이 우수한 태양전지용 기판 및 그 제조방법 |
| JP2019067837A (ja) * | 2017-09-29 | 2019-04-25 | 京セラ株式会社 | 太陽電池モジュール |
| CN111900219B (zh) * | 2020-07-10 | 2022-03-18 | 唐山科莱鼎光电科技有限公司 | 用于制备薄膜太阳能电池第一道刻线、第三道刻线的方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661518A (ja) * | 1992-06-08 | 1994-03-04 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
| JP2000349325A (ja) * | 1999-06-04 | 2000-12-15 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池モジュール |
| JP2001077383A (ja) * | 1999-09-01 | 2001-03-23 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池モジュール及びその製造方法 |
| JP2002241446A (ja) * | 2000-12-11 | 2002-08-28 | Asahi Glass Co Ltd | 硬化性組成物、硬化被膜および被覆基材 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4624512B2 (ja) * | 1999-12-28 | 2011-02-02 | 日揮触媒化成株式会社 | 光電気セルおよび該光電気セルの半導体膜形成用塗布液 |
| JP3727877B2 (ja) * | 2001-11-06 | 2005-12-21 | 三菱重工業株式会社 | 太陽電池パネルの製造方法 |
-
2008
- 2008-10-15 JP JP2009538100A patent/JPWO2009051122A1/ja active Pending
- 2008-10-15 WO PCT/JP2008/068615 patent/WO2009051122A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661518A (ja) * | 1992-06-08 | 1994-03-04 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
| JP2000349325A (ja) * | 1999-06-04 | 2000-12-15 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池モジュール |
| JP2001077383A (ja) * | 1999-09-01 | 2001-03-23 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池モジュール及びその製造方法 |
| JP2002241446A (ja) * | 2000-12-11 | 2002-08-28 | Asahi Glass Co Ltd | 硬化性組成物、硬化被膜および被覆基材 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009051122A1 (fr) | 2009-04-23 |
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