JPWO2009025186A1 - Organic electroluminescent panel manufacturing method, organic electroluminescent panel - Google Patents

Abstract

A method for manufacturing an organic EL panel capable of suppressing the occurrence of a short circuit due to the adhesion of foreign matter that occurs in a manufacturing process, comprising: a first electrode on a substrate; and a plurality of organic compound layers including a light emitting layer In the manufacturing method of the organic electroluminescence panel in which the organic electroluminescence element having the second electrode is sealed with a sealing member, the step of forming the first electrode and the step of forming at least one layer of the organic compound layer, Is in a vacuum environment condition, and the step of forming the first electrode and the step of forming at least one layer of the organic compound layer are continuously performed.

Description

  The present invention relates to a method for producing an organic electroluminescence panel (hereinafter also referred to as an organic EL panel) and an organic EL panel produced by this method.

  In recent years, organic EL elements using organic substances have been promising for use as solid light-emitting inexpensive, large-area full-color display elements and writing light source arrays, and active research and development have been promoted. The organic EL element includes a first electrode (anode or cathode) formed on a substrate, an organic compound layer (single layer portion or multilayer portion) containing an organic light emitting material laminated thereon, that is, a light emitting layer, It is a thin film type element having a second electrode (cathode or anode) laminated on the light emitting layer. When a voltage is applied to such an organic EL element, electrons are injected from the cathode and holes are injected from the anode into the organic compound layer. It is known that light is obtained by releasing energy as light when the electrons and holes recombine in the light emitting layer and the energy level returns from the conduction band to the valence band.

  As described above, since the organic EL element is a thin film type element, when an organic EL panel in which one or a plurality of organic EL elements are formed on a substrate is used as a surface light source such as a backlight, a surface light source. It is possible to easily make a device equipped with In addition, when an organic EL display device is configured using an organic EL panel in which a predetermined number of organic EL elements as pixels are formed on a substrate as a display panel, the liquid crystal display has high visibility and no viewing angle dependency. There are advantages that cannot be obtained with the device.

  By the way, organic substances such as organic light-emitting materials used in organic EL elements are weak against moisture and oxygen, and their performance deteriorates. Also, the characteristics of electrodes deteriorate rapidly in the atmosphere due to oxidation, so that these deteriorations can be prevented. In general, a sealing layer is provided as the uppermost layer.

  In the present invention, a state in which a plurality of organic compound layers including a first electrode and a light emitting layer and a second electrode are formed on a substrate is referred to as an organic EL element, and a state in which the substrate is closely sealed with a sealing member is referred to as an organic EL panel. To tell.

  Such an organic EL display device is configured by arranging organic EL elements in a matrix. In such a configuration, for example, an organic compound layer (single layer portion or multilayer portion) including a light emitting layer containing an organic light emitting material laminated on the first electrode (anode) and the first electrode (anode) It is arranged for each pixel. Further, the second electrode is arranged in common for a plurality of pixels.

  In the manufacturing process of the organic EL element, in order to form the first electrode (anode) on the substrate, for example, an Indium Tin Oxide (ITO: indium tin oxide) film is mask-deposited by a sputtering method or the like, or an ITO film is formed. After the entire surface is formed, it can be formed by patterning using a photolithography method, an etching method, or the like. The organic compound layer including the light emitting layer can be stacked by a coating method or a vapor deposition method.

  When laminating such a light emitting layer, foreign matter may adhere to the surface of the first electrode. In the vicinity of the foreign matter, the light emitting layer is thin or there is no light emitting layer, and when the second electrode is disposed on the light emitting layer, the first electrode and the second electrode are shorted around the foreign matter. There is a fear. When a short circuit occurs, the shorted part becomes defective in light emission, and an organic EL display device using such an organic EL element becomes a defective product. Therefore, measures have been taken to prevent foreign matter adhesion. For example, in an organic EL device in which an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode layer are laminated in this order on a substrate, the foreign matter attached on the anode layer is substantially eliminated by the hole transport layer. In order to cover the film, the thickness of the hole transport layer is increased. As a result, a method is known in which the anode layer and the cathode layer are prevented from being directly contacted and short-circuited, and the light emission failure of the pixel due to the short-circuit is reduced (see, for example, Patent Document 1).

  However, in the method described in Patent Document 1, it is difficult to reduce the thickness of the organic EL element depending on the size of the foreign matter, which is not a drastic measure for preventing foreign matter adhesion. In addition, when the hole transport layer is formed by the vapor deposition method, it is difficult to prevent a short circuit from occurring due to a shadowed portion of the foreign matter shadowing the vapor deposition source. Increasing the thickness of the hole transport layer has an effect on the light emission characteristics (increase in drive voltage or decrease in light emission efficiency), and the degree of freedom in selecting materials and setting the thickness of each layer is narrowed.

  A first electrode disposed for each pixel; an organic active layer disposed on the first electrode; and a second electrode disposed in common to the plurality of pixels and disposed to cover the organic active layer In addition, there is a known display device including an organic EL element, in which a gap is provided between the first electrode and the organic active layer to suppress occurrence of a short circuit even if foreign matter adheres during the manufacturing process. (For example, refer to Patent Document 2).

  However, in the method described in Patent Document 2, a heat-melting process is necessary to provide a gap, and cracks may occur in each layer constituting the organic EL element due to the difference in the coefficient of thermal expansion of each part. Although the stress relaxation effect is recognized by the voids, it has not yet reached the fundamental countermeasures. In recent years, flexible panels have been studied. However, when a plastic substrate is used as the substrate, the problem due to heating becomes significant due to the large coefficient of thermal expansion.

From such a situation, it is possible to cope with thin organic EL elements without changing the thickness of the organic layer and without performing secondary treatment such as heat treatment, and to adhere to foreign matters generated in the manufacturing process. Development of an organic EL panel manufacturing method and an organic EL panel capable of suppressing the occurrence of a short circuit is desired.
JP 2005-101008 A JP 2007-95636 A

  The present invention has been made in view of the above situation, and an object of the present invention is to provide an organic EL panel manufacturing method and an organic EL panel capable of suppressing the occurrence of a short circuit due to adhesion of foreign matter generated in the manufacturing process. It is to be.

  The above object of the present invention has been achieved by the following constitution.

  1. In the method of manufacturing an organic electroluminescence panel, on the substrate, an organic electroluminescence element having a first electrode, a plurality of organic compound layers including a light emitting layer, and a second electrode, sealed with a sealing member, The formation process of the first electrode and the formation process of at least one layer of the organic compound layer are in a vacuum environment condition, and the formation process of the first electrode and the formation process of the at least one layer are continuously performed. A method for producing an organic electroluminescence panel, comprising:

  2. 2. The method for producing an organic electroluminescence panel according to 1 above, wherein the step of forming the first electrode is mask pattern film formation.

  3. The first electrode forming step includes a first electrode forming film forming step and a first electrode forming film patterning step, and the film forming step and the patterning step are performed under vacuum environment conditions. 2. The method for producing an organic electroluminescence panel according to 1 above, which is carried out continuously.

  4). The first electrode forming step includes a film forming step of a first electrode forming film. The first electrode forming film is formed in the film forming step, and the first electrode formed continuously is formed. 2. The method for producing an organic electroluminescence panel according to 1 above, wherein after forming the organic compound layer on the electrode forming film, the first electrode forming film is patterned in a patterning step.

  5. 5. The organic electroluminescence panel according to claim 1, wherein the patterning step includes forming an insulating layer and patterning the insulating layer to pattern the first electrode. Manufacturing method.

  6). 5. The method of manufacturing an organic electroluminescence panel according to 4 above, wherein the patterning step patterns the first electrode by patterning an insulating layer from at least one of the organic compound layers.

  7). 7. An organic electroluminescence panel produced by the method for producing an organic electroluminescence panel according to any one of 1 to 6 above.

  An organic EL panel manufacturing method and an organic EL panel capable of suppressing the occurrence of a short circuit due to the adhesion of foreign matter generated in the manufacturing process can be provided, and the yield of products can be improved.

It is the schematic of the organic electroluminescent panel using the 1st electrode (anode) formed by mask pattern film-forming. It is the schematic of the organic electroluminescent panel using the 1st electrode (anode) formed by forming the film | membrane for 1st electrodes (anode) on a base material, and patterning with an insulating film. An organic EL panel using a first electrode (anode) formed by forming a film for a first electrode (anode) on a substrate, laminating a hole transport layer and then patterning with an insulating film FIG. It is a schematic flowchart until it forms to the 1st electrode (anode) and hole transport layer which comprise the organic electroluminescent panel shown by FIG. FIG. 3 is a schematic flow chart until formation of a first electrode (anode) and a hole transport layer constituting the organic EL panel shown in FIG. 2. FIG. 4 is a schematic flow chart until formation of a first electrode (anode) and a hole transport layer constituting the organic EL panel shown in FIG. 3. It is a schematic diagram which shows an example of the manufacturing process of the organic electroluminescent panel which has the close_contact | adherence sealing structure with the organic EL element produced by the lamination | stacking method using a strip | belt-shaped base material with a sealing member. It is a schematic diagram which shows an example of the manufacturing process in the case of forming from a 1st electrode formation to organic compound layer (hole transport layer) formation by another method among the manufacturing processes shown in FIG. Production of an organic EL panel by a roll-to-roll method of bonding using a strip-like base material formed from the first electrode formation to the organic compound layer (hole transport layer) produced by the production process shown in FIGS. It is a schematic diagram which shows an example of a process. It is a schematic diagram which shows an example of the manufacturing process of the organic electroluminescent panel which has an organic EL element produced by the lamination | stacking method using a sheet | seat base material, and has an adhesion sealing structure with a sealing member.

Explanation of symbols

1a, 1b Organic EL panel 101 Base material 102 First electrode (anode)
103 hole transport layer 104 light emitting layer 105 cathode buffer layer (electron injection layer)
106 Second electrode (cathode)
107 Adhesive layer 108 Sealing member 109 Insulating layer 2, 5 Manufacturing process 201, 701 Supply process 202, 702 First electrode forming process 202'702 'Film forming process 203, 703 Hole transport layer forming process 204, 704 Light emitting layer Formation process 205, 705 Electron injection layer formation process 206, 706 Second electrode formation process 207, 707 Sealing process 208 Cutting process 209, 709 Insulating layer forming process 3 Band-shaped substrate 5a First supply process 5b Second supply process 5c Sealing Stopper coating process 5d Bonding process 5e Punching process 708 Collection process 709 Insulating layer forming process 8 Single wafer substrate

  Embodiments of the present invention will be described with reference to FIGS. 1 to 10, but the present invention is not limited thereto.

  FIG. 1 is a schematic view of an organic EL panel formed using a first electrode (anode) formed by mask pattern deposition. FIG. 1A is a schematic perspective view of an organic EL panel formed using a first electrode (anode) formed by mask pattern deposition. FIG.1 (b) is a schematic sectional drawing in alignment with AA 'of Fig.1 (a). FIG.1 (c) is a schematic sectional drawing in alignment with BB 'of Fig.1 (a).

  In the figure, 1a represents an organic EL panel. The organic EL panel 1a includes a first electrode (anode) 102, a hole transport layer 103, a light emitting layer 104, a cathode buffer layer (electron injection layer) 105, and a second electrode (cathode) in order on a substrate 101. ) 106 is laminated with an organic EL element having a structure laminated with a sealing member 108 via an adhesive layer 107. Reference numeral 102 a denotes an extraction electrode of the first electrode (anode) 102, and reference numeral 106 a denotes an extraction electrode of the second electrode (cathode) 106. The first electrode (anode) 102 is formed on the base material 101 using a mask in a shape having an extraction electrode 102a. A barrier film (not shown) may be provided between the first electrode (anode) 102 and the first substrate 101. The process from the formation of the first electrode (anode) 102 to the formation of the hole transport layer 103 will be described with reference to FIG.

  FIG. 2 is a schematic view of an organic EL panel using a first electrode (anode) formed by forming a film for a first electrode (anode) on a substrate and then patterning with an insulating film. FIG. 2A is a schematic perspective view of an organic EL panel using a first electrode (anode) formed by patterning an insulating film after forming a film for a first electrode (anode) on a substrate. It is. FIG. 2B is a schematic cross-sectional view along CC ′ of FIG. FIG. 2C is a schematic cross-sectional view taken along the line DD ′ in FIG.

  In the figure, 1b represents an organic EL panel. Reference numeral 109 denotes an insulating layer. In the first electrode (anode) 102 shown in the figure, after a film for the first electrode (anode) is formed on the entire surface of the substrate 101, a hole transport layer 103, a light emitting layer 104, and a cathode buffer layer are formed. A region where the (electron injection layer) 105 and the second electrode (cathode) 106 are laminated and the extraction electrode 102 a are formed by patterning with an insulating layer 109. The structure of the organic EL panel 1b shown in this figure is the same as that of the organic EL panel 1a shown in FIG. Other reference numerals are the same as those in FIG. The process from the film formation for the first electrode (anode) 102 to the formation of the hole transport layer 103 will be described with reference to FIG.

  FIG. 3 shows an organic EL using a first electrode (anode) formed by forming a film for a first electrode (anode) on a substrate, laminating a hole transport layer, and then patterning with an insulating film. It is the schematic of a panel. FIG. 3A is a schematic perspective view of an organic EL panel using a first electrode (anode) formed by forming a film for a first electrode (anode) on a substrate and then performing mask patterning with an insulating film. FIG. FIG. 3B is a schematic cross-sectional view taken along the line EE ′ of FIG. FIG.3 (c) is a schematic sectional drawing in alignment with FF 'of Fig.3 (a).

  In the figure, 1c represents an organic EL panel. In the first electrode (anode) 102 shown in the figure, after a film for the first electrode (anode) is formed on the entire surface of the substrate 101, a hole transport layer 103 which is an organic compound layer is formed thereon. Form on the entire surface. Thereafter, the light emitting layer 104, the region where the cathode buffer layer (electron injection layer) 105 and the second electrode (cathode) 106 are laminated and the extraction electrode 102a are formed by patterning with the insulating layer 109. The structure of the organic EL panel 1c shown in this figure is the same as that of the organic EL panel 1a shown in FIG. Other reference numerals are the same as those in FIG. 6 from the formation of the first electrode (anode) 102 to the patterning by the insulating layer 109 will be described.

  The organic EL panel shown in FIGS. 1 to 3 is formed by adhering an organic EL element produced by sequentially laminating a first electrode, a hole transport layer, a light emitting layer, an electron injection layer, and a second electrode on a substrate. The case where it manufactures with the manufacturing method by the lamination method which adheres and seals with a sealing member through an agent is shown.

  In addition, the organic EL panel shown in FIGS. 1 to 3 includes a first member in which a first electrode, a hole transport layer, and a light emitting layer are laminated on a first base material, and a second member on the second base material. After preparing the electrode and the second member on which the electron injection layer is laminated and pasting in a state where the hole transport layer, the light emitting layer and the electron injection layer are sandwiched between the first electrode and the second electrode, It is also possible to manufacture by the manufacturing method by the bonding method which seals the space of 1 base material and 2nd base material with a sealing agent.

  The layer structure of the organic EL panel shown in this figure shows an example by a lamination method, but other typical layers of organic EL elements between the anode (first electrode) and the cathode (second electrode). Examples of the configuration include the following configurations.

(1) Base material / first electrode (anode) / organic layer (light emitting layer) / second electrode (cathode) / adhesive / sealing member (2) base material / first electrode (anode) / organic layer (light emission) Layer) / electron transport layer / second electrode (cathode) / adhesive / sealing member (3) substrate / first electrode (anode) / hole transport layer / organic layer (light emitting layer) / hole blocking layer / Electron transport layer / second electrode (cathode) / adhesive / sealing member (4) substrate / first electrode (anode) / hole transport layer (hole injection layer) / organic layer (light emitting layer) / hole Blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / second electrode (cathode) / adhesive / sealing member (5) substrate / first electrode (anode) / anode buffer layer (hole injection layer) ) / Hole transport layer / organic layer (light emitting layer) / hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / second electrode (cathode) / adhesive / sealing member EL panel layer When the composition is made by a bonding method, the first substrate / first electrode (anode) / hole transport layer / organic layer (light emitting layer) / cathode buffer layer (electron injection layer) / second electrode (cathode) / Although it becomes a 2nd base material, the following structure is mentioned as a layer structure of another typical organic electroluminescent panel.

(1) First substrate / first electrode (anode) / organic layer (light emitting layer) / second electrode (cathode) / second substrate (2) first substrate / first electrode (anode) / organic layer (Light emitting layer) / electron transport layer / second electrode (cathode) / second substrate (3) first substrate / first electrode (anode) / hole transport layer / organic layer (light emitting layer) / hole blocking Layer / electron transport layer / second electrode (cathode) / second substrate (4) first substrate / first electrode (anode) / hole transport layer (hole injection layer) / organic layer (light emitting layer) / Hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / second electrode (cathode) / second substrate (5) first substrate / first electrode (anode) / anode buffer layer (holes) Injection layer) / hole transport layer / organic layer (light emitting layer) / hole blocking layer / electron transport layer / cathode buffer layer (electron injection layer) / second electrode (cathode) / second base material Each layer is explained later That.

  The present invention relates to a method for manufacturing an organic EL panel using a first electrode formed by patterning as shown in FIGS. 1 to 3 and an organic EL panel.

  The method for sealing the organic EL element when manufacturing the organic EL panel shown in FIGS. 1 to 3 includes a casing type and a close contact type, and can be appropriately selected and used. 1 to 3 show the case of the close contact type. The casing type sealing method is to seal an organic EL element by placing it in a case and blocking the outside, and filling the case with a predetermined gas or fluid for sealing together with the organic EL element. Is the method. The close-contact type sealing method is a method of sealing by sealing the sealing member to the back surface of the organic EL element formed on the substrate (the surface of the organic EL element as viewed from the substrate side) with an adhesive. is there.

  FIG. 4 is a schematic flowchart up to forming the first electrode (anode) and the hole transport layer constituting the organic EL panel shown in FIG. Hereinafter, the process until the first electrode (anode) and the hole transport layer are formed according to the flow of Step 1 to Step 3 will be described.

  In Step 1, the base material 101 is prepared. The substrate 101 can be either a strip-shaped substrate or a single-wafer substrate. Reference numeral 101a denotes an alignment mark for determining a position where the first electrode (anode) 102 is formed.

  In Step 2, the position at which the first electrode (anode) 102 is formed is determined according to the alignment mark 101a attached to the substrate 101, and the first electrode (anode) having a portion that becomes the extraction electrode 102a by the mask pattern film forming method. ) 102 is formed. The mask pattern film forming method refers to a method of forming a film using a mask having a necessary shape in advance when, for example, ITO is formed on the substrate 101 by sputtering as a material for the first electrode (anode). .

  In Step 3, the hole transport layer 103, which is an organic compound layer, is laminated on the entire surface of the first electrode (anode) 102 except for the portion that becomes the extraction electrode 102 a according to the alignment mark 101 a attached to the substrate 101.

  Step 1 to Step 3 need to be performed continuously in a vacuum environment. “Consecutively performing” means that each step of Step 1 to Step 3 is placed in a vacuum environment when moving to the next Step. After Step 3, the step of forming the light emitting layer may not be in a vacuum environment. By performing Step 1 to Step 3 continuously in a vacuum environment, it is possible to prevent foreign matter from adhering to the first electrode (anode) 102.

The term “in a vacuum environment” as used in the present invention refers to a range of atmospheric pressure or lower, preferably in the range of 1 to 1 × 10 ⁻⁶ Pa.

  FIG. 5 is a schematic flow chart up to formation of the first electrode (anode) and the hole transport layer constituting the organic EL panel shown in FIG. Hereinafter, the process until the first electrode (anode) and the hole transport layer are formed according to the flow of Step 1 to Step 4 will be described.

  In Step 1, the base material 101 is prepared. The substrate 101 can be either a strip-shaped substrate or a single-wafer substrate. Reference numeral 101a denotes an alignment mark for determining a position where the first electrode (anode) 102 is formed.

  In Step 2, a first electrode (anode) film 102 ′ to be the first electrode (anode) 102 is formed on the entire surface of the substrate 101 by vapor deposition, sputtering, or the like.

  In Step 3, the shape of the first electrode (anode) 102 having a portion to be the extraction electrode 102a is formed on the first electrode (anode) film 102 'in accordance with the alignment mark 101a attached to the substrate 101. An insulating film 109 is formed and patterned.

The material used for the insulating film is not particularly limited as long as the film has a resistivity of 1 × 10 ⁶ Ω · cm or more. For example, silicon nitride, silicon oxide, silicon carbide (SiN, SiON, SiO ₂ , SiC) and the like.

  Examples of the method for forming the insulating film include a vapor deposition method, a sputtering method, a plasma CVD method, and the like, which can be appropriately selected and used. For example, when the substrate is a belt-like substrate, it is preferably formed by a sputtering method. When the substrate is a single-wafer substrate, it is preferably formed by a plasma CVD method. The thickness of the insulating film is preferably 50 nm to 2 μm in consideration of the insulating property, the thickness of the organic EL element, and the like.

  In Step 4, the hole transport layer 103, which is an organic compound layer, is laminated on the entire surface of the first electrode (anode) 102 except for the portion that becomes the extraction electrode 102 a according to the alignment mark 101 a attached to the base material 101.

  Step 1 to Step 4 need to be performed continuously in a vacuum environment. Performing continuously means that each step of Step 1 to Step 4 is placed in a vacuum environment even when moving to the next Step. After Step 4, the step of forming the light emitting layer may not be in a vacuum environment.

  By performing Step 1 to Step 4 continuously in a vacuum environment, it is possible to prevent foreign matter from adhering to the first electrode (anode) 102. In addition, since the patterning is performed with the insulating film, the scattering of the foreign matter accompanying the patterning by the photolithography method, the etching method, or the like is eliminated, so that it is possible to further prevent the foreign matter from adhering to the first electrode (anode) 102. ing.

  FIG. 6 is a schematic flow chart until the first electrode (anode) and the hole transport layer constituting the organic EL panel shown in FIG. 3 are formed. Hereinafter, the process until the first electrode (anode) and the hole transport layer are formed according to the flow of Step 1 to Step 5 will be described.

  In Step 1, the base material 101 is prepared. The substrate 101 can be either a strip-shaped substrate or a single-wafer substrate. Reference numeral 101a denotes an alignment mark for determining a position where the first electrode (anode) 102 is formed.

  In Step 2, a first electrode (anode) film 102 ′ to be the first electrode (anode) 102 is formed on the entire surface of the substrate 101 by vapor deposition, sputtering, or the like.

  In Step 3, the hole transport layer 103, which is an organic compound layer, is laminated on the entire surface of the first electrode (anode) film 102 '.

  In Step 4, in accordance with the alignment mark 101a attached to the base material 101, the insulating film is interposed through the mask so as to have the shape of the first electrode (anode) 102 having a portion to be the extraction electrode 102a on the hole transport layer 103. 109 is formed and patterned. The material used for the insulating film 109, the resistivity, the forming method, and the thickness of the insulating film are the same as those of the insulating film shown in FIG.

  In Step 5, the portion of the hole transport layer 103 that becomes the extraction electrode 102a is removed to form the extraction electrode 102a. Thereafter, a light emitting layer 104 made of an organic compound is laminated on the entire surface corresponding to the first electrode (anode) 102 serving as a light emitting region except for the portion of the extraction electrode 102a. The method for removing the hole transport layer is not particularly limited, and examples thereof include a method in which a solvent capable of dissolving the hole transport layer is soaked into the nonwoven fabric and wiped off.

  Note that when forming the hole transport layer 103 in Step 3 in the flow shown in this drawing, a portion that becomes the extraction electrode 102a may be formed using a mask. In this case, it is not necessary to remove the hole transport layer described in Step 5 in the portion to be the extraction electrode 102a shown in the drawing.

  Step 1 to Step 3 need to be performed continuously in a vacuum environment. “Consecutively performing” means that each step of Step 1 to Step 3 is placed in a vacuum environment when moving to the next Step. After Step 3, it does not have to be in a vacuum environment. By performing Step 1 to Step 3 continuously in a vacuum environment, it is possible to prevent foreign matter from adhering to the first electrode (anode) 102.

As shown in FIGS. 4 to 6, the present invention forms a first electrode (including a film for the first electrode) and at least one layer on the first electrode (including a film for the first electrode). The organic compound layer is formed continuously in a vacuum environment. After forming at least one organic compound layer, it may be performed in an atmospheric pressure environment. The following effects can be obtained by manufacturing an organic EL panel by such a method.
1) Since there is no adhesion of foreign matter on the first electrode, it is possible to manufacture an organic EL panel with stable quality by eliminating shorts and defective light emission associated with the foreign matter.
2) With the stabilization of quality, production efficiency can be improved.

  FIG. 7 is a schematic view showing an example of a manufacturing process of an organic EL panel having an organic EL element produced by a laminating method using a belt-like substrate and having a close sealing structure with a sealing member.

  In the figure, reference numeral 2 denotes a manufacturing process of the organic EL panel. The manufacturing process 2 includes a belt-shaped substrate supplying process 201, a first electrode forming process 202, a hole transport layer forming process 203, a light emitting layer forming process 204, an electron injection layer forming process 205, and a second electrode forming process. A process 206, a sealing process 207, and a cutting process 208 are included. From the supply step 201, the belt-like substrate 3 is fed out and supplied. Reference numeral 301 denotes a roll-shaped belt-like substrate prepared in the supply device.

  The supply process 201 includes a belt-shaped base material feeding device (not shown) wound up in a roll shape and an accumulator 201a, and is continuously applied to the first electrode forming process 202 of the next process. It comes to pay out. It is preferable to attach an alignment mark (not shown) for determining the position where the first electrode is formed in advance to the belt-like substrate 3 (see Step 1 in FIG. 4). The accumulator 201a is disposed for speed adjustment with the first electrode forming step 202 of the next step.

  The first electrode forming step 202 includes a vapor deposition apparatus 202a having an evaporation source container 202b and an accumulator 202c. The accumulator 202c is arranged for speed adjustment with the hole transport layer forming step 203 which is an organic compound layer in the next step. In the first electrode formation step 202, an alignment mark (not shown) attached to the belt-like substrate 3 continuously supplied from the supply step 201 is read by a detection device (not shown), and the detection device (not shown) A first electrode (not shown, corresponding to the first electrode 102 in FIG. 1) having an extraction electrode at a position determined by the vapor deposition apparatus 202a according to the information is formed into a mask pattern (see Step 2 in FIG. 4). The thickness of the first electrode is preferably 100 nm to 200 nm.

  The hole transport layer forming step 203 includes a vapor deposition device 203a having an evaporation source container 203b, an accumulator 203c, and a winding device (not shown). The accumulator 203c is arranged for speed adjustment in a winding device (not shown) in the next process. In the hole transport layer forming step 203, an alignment mark (not shown) attached on the belt-like substrate 3 continuously sent from the first electrode forming step 202 is read by a detection device (not shown), A hole transport layer (not shown, FIG. 1) is formed on the first electrode except for the extraction electrode portion of the first electrode having the extraction electrode formed on the belt-like substrate 3 by the vapor deposition device 203a according to the information of the detection device (not shown). (Corresponding to the hole transport layer 103) is formed as a mask pattern (see Step 3 in FIG. 4). The thickness of the hole transport layer is about 5 nm to 5 μm, preferably 5 to 200 nm. After the hole transport layer is formed, it is preferable to take up and store temporarily by a take-up device (not shown). Thereafter, it is sent to the light emitting layer forming step 204. 3a shows the strip | belt-shaped base material on which even the positive hole transport layer wound up by the winding apparatus (not shown) and roll-shaped was laminated | stacked.

  The supply process 201 to the hole transport layer forming process 203 must be continuously performed in a vacuum environment. “Continuously performing” means that the process is carried out in a vacuum environment when moving from each step of the supplying step 201 to the hole transport layer forming step 203 to the next step. In addition, when the first electrode formation step 202 and the hole transport layer formation step 203 are made of different materials and the vacuum environment is different, it may be possible to set a different vacuum environment. You can go on.

  In addition, although the case where the 1st electrode formation process is formed with a vapor deposition method is shown in this figure, there is no limitation in particular about a formation method, For example, sputtering method etc. can be used. Moreover, although the case where the hole transport layer 103 is formed by a vapor deposition method is shown, the formation method is not particularly limited, and for example, it can be formed by a wet method using ink jet. Further, although this figure shows a case where the film is temporarily wound and stored at the stage where the hole transport layer 103 is formed, it can also be continuously transferred to the light emitting layer forming step 204.

  The light emitting layer forming step 204 includes a feeding unit 204a, a coating unit 204b, a drying unit 204c, and a winding unit 204d. In the light emitting layer forming step 204, the light emitting layer forming coating solution is applied on the hole transport layer except for the take-out electrode portion of the belt-like substrate 3a formed up to the hole transport layer, and the light emitting layer is formed through the drying portion 204c. Once formed, it is wound up and stored. Incidentally, the light emitting layer forming step 204 in this figure is arranged in an atmospheric pressure environment.

In the feed-out part 204a, up to the hole transport layer is already formed, and the belt-like substrate 3a wound in a roll shape wound around the winding core is supplied. An antistatic means 204a1 can be disposed between the feeding unit 204a and the coating unit 204b as necessary. It has an antistatic means 204a1, a non-contact type antistatic device 204a11 and a contact type antistatic device 204a12. Examples of the non-contact type antistatic device 204a11 include a non-contact type ionizer. The type of ionizer is not particularly limited, and the ion generation method may be either an AC method or a DC method. An AC type, a double DC type, a pulsed AC type, and a soft X-ray type can be used, but the AC type is particularly preferable from the viewpoint of precise static elimination. Air or N ₂ is used as the injection gas required when using the AC type, but it is preferable to use N ₂ with sufficiently high purity. From the viewpoint of in-line operation, the blower type or the gun type is selected.

  As the contact-type antistatic device 204a12, a static eliminating roll or a conductive brush connected to the ground is used. The static elimination roll as the static eliminator is grounded and removes the surface charge by rotatingly contacting the neutralized surface. Such static elimination rolls include rolls made of elastic plastic or rubber mixed with conductive materials such as carbon black, metal powder, and metal fibers in addition to rolls made of metal such as aluminum, copper, nickel, and stainless steel. used. In particular, an elastic material is preferable in order to improve the contact with the belt-like substrate 3a. Examples of the conductive brush connected to the earth include a neutralizing bar or a neutralizing yarn structure having a brush member made of conductive fibers arranged in a line or a linear metal brush. The neutralization bar is not particularly limited, but a corona discharge type is preferably used. For example, SJ-B manufactured by Keyence Corporation is used. There is no particular limitation on the static elimination yarn, but usually a flexible yarn is preferably used. For example, 12/300 × 3 manufactured by Naslon can be cited as an example.

  The non-contact type antistatic device 204a11 is preferably used on the surface side of the hole transport layer formed on the strip-shaped substrate 3a, and the contact-type antistatic device 204a12 is preferably used on the back side of the strip-shaped substrate 3a.

  The coating unit 204b includes a wet coating machine 204b1 and a backup roll 204b2 that holds the belt-shaped substrate 3a. The coating solution for forming the light emitting layer by the wet coater 204b1 detects an alignment mark (not shown) attached to the belt-like substrate 3a with an alignment mark detector (not shown), and takes out the first electrode (anode). It is applied on a hole transport layer (not shown, corresponding to the hole transport layer 103 in FIG. 1) already formed except for (not shown, corresponding to the extraction electrode 102a in FIG. 1). Usable wet coaters include, for example, die coating method, screen printing method, flexographic printing method, ink jet method, Mayer bar method, cap coating method, spray coating method, casting method, roll coating method, bar coating method, gravure coating. It is possible to use a coating machine such as a method. The use of these wet coating machines can be appropriately selected according to the material of the light emitting layer. In this figure, since the organic EL element used for illumination is taken as an example, the wet coater 204b1 is of the whole surface coating type. However, when the organic EL panel is a full color system, it is patterned and formed. For example, an inkjet method, a flexographic printing method, an offset printing method, a gravure printing method, a screen printing method in order to apply a light emitting layer on the first electrode (anode) in accordance with the pattern of the first electrode (anode) that has been applied. It is possible to use various coating apparatuses used for a spray coating method using a mask.

  The drying unit 204c has a drying device 204c1 and a heat treatment device 204c2, and heats the light emitting layer (not shown, corresponding to the light emitting layer 104 in FIG. 1) from the back surface side of the belt-like substrate 3a by the back surface heat transfer method. It is supposed to do. In consideration of heat treatment conditions for the light emitting layer (not shown, corresponding to the light emitting layer 104 in FIG. 1) in the heat treatment apparatus 204c2, the light emitting layer is improved in smoothness, the residual solvent is removed, the light emitting layer is cured, and the like. It is preferable to perform the back surface heat transfer system heat treatment at a temperature not exceeding the decomposition temperature of the organic compound constituting the light emitting layer at −30 to + 30 ° C. with respect to the glass transition temperature.

  In the case where the light emitting layer (not shown, corresponding to the light emitting layer 104 in FIG. 1) is a multilayer, it is necessary to dispose the application / drying unit according to the number of layers. For example, a white element can be manufactured by forming a light emitting layer in multiple layers. In the present invention, the light emitting layer refers to a blue light emitting layer, a green light emitting layer, and a red light emitting layer. There is no restriction | limiting in particular as a lamination order in the case of laminating | stacking a light emitting layer, You may have a nonluminous intermediate | middle layer between each light emitting layer. In the present invention, it is preferable that at least one blue light emitting layer is provided at a position closest to the anode among all the light emitting layers. Also, when four or more light emitting layers are provided, for example, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting layer, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting from the order close to the anode. Layered / green light emitting layer, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting layer / green light emitting layer / red light emitting layer, etc. It is preferable for improving luminance stability.

  The total thickness of the light emitting layer is not particularly limited, but is usually selected in the range of 2 nm to 5 μm, preferably 2 nm to 200 nm in consideration of the film homogeneity, the voltage required for light emission, and the like. Further, it is preferably in the range of 10 nm to 20 nm. A film thickness of 20 nm or less is preferable because it has the effect of improving the stability of the emission color with respect to the driving current as well as the voltage surface. The film thickness of each light emitting layer is preferably selected in the range of 2 nm to 100 nm, and more preferably in the range of 2 nm to 20 nm. Although there is no restriction | limiting in particular about the film thickness relationship of each light emitting layer of blue, green, and red, It is preferable that the blue light emitting layer (the sum total when there are two or more layers) is the thickest among three light emitting layers.

  It is preferable to dispose antistatic means 204c3 between the drying unit 204c and the winding unit 204d. The antistatic means 204c3 is the same type of antistatic device as the antistatic means 204a1.

  In the winding unit 204d, the belt-like substrate 3b on which a light emitting layer (not shown, corresponding to the light emitting layer 104 in FIG. 1) is formed by a winding device is wound and stored in a roll shape. Then, it is sent to the electron injection layer forming step 205.

  The electron injection layer forming step 205 includes a feeding portion 205a of the belt-like substrate 3b wound up in a roll shape, and a vapor deposition apparatus 205b having an evaporation source container 205c. Reference numeral 205d denotes an accumulator disposed between the feeding unit 205a and the vapor deposition apparatus 205b. Reference numeral 205e denotes an accumulator disposed between the electron injection layer forming step 205 and the second electrode forming step 206. The accumulator 205e is provided for speed adjustment with the second electrode forming step 206 of the next step.

  In the electron injection layer forming step 205, an alignment mark (not shown) attached to the belt-like substrate 3b continuously supplied from the feeding portion 205a is read by a detection device (not shown), and the detection device (not shown) Except for the extraction electrode (not shown, corresponding to the extraction electrode 102a in FIG. 1) at a position determined by the vapor deposition apparatus 205b according to the information, the light emitting layer already formed (not shown, corresponding to the light emission layer 104 in FIG. 1). ) Is formed with a mask pattern (not shown, corresponding to the electron injection layer 105 in FIG. 1). The thickness of the electron injection layer is preferably in the range of 0.1 nm to 5 μm.

  The second electrode forming step 206 includes a vapor deposition device 206a having an evaporation source container 206b and an accumulator 206c. The accumulator 206c is provided for speed adjustment with the sealing step 207 of the next step.

  In the second electrode forming step 206, an alignment mark (not shown) attached to the belt-like substrate 3b continuously supplied from the electron injection layer forming step 205 is read by a detecting device (not shown), and the detecting device (not shown) is read. A second electrode (cathode) (not shown, second electrode (not shown) in FIG. 1) having a takeout electrode (not shown, corresponding to the takeout electrode 106a in FIG. 1) at a position determined by the vapor deposition apparatus 206a according to the information of the drawing (shown). A cathode pattern (corresponding to the cathode) 106 is formed on the already formed electron injection layer (not shown, corresponding to the electron injection layer 105 in FIG. 1). The sheet resistance as the second electrode (cathode) is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm. At this stage, an organic EL device having a configuration of base material / first electrode (anode) / hole transport layer / light emitting layer / electron injection layer / second electrode (cathode) is completed.

  In this figure, the second electrode (cathode) forming step 205 and the cathode buffer layer (electron injection layer) forming step 206 are shown in the case of a vapor deposition apparatus, but the second electrode (cathode) and the cathode buffer layer (electron injection layer) are shown. There is no particular limitation on the formation method of, for example, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma polymerization method, plasma CVD method, laser. A CVD method, a thermal CVD method, a coating method, or the like can be used.

  The sealing step 207 includes a sealing member coating device 207a, a sealing member 207b1 sent from the sealing member supply step 207b, a bonding device 207c, and an accumulator 207d. The accumulator 207d is arranged for speed adjustment with the cutting process 208 of the next process. Note that an alignment mark (not shown) is also attached to the sealing member 207b1 at the same position as the alignment mark (not shown) attached to the belt-like substrate 3b.

In the sealing step 207, an alignment mark (not shown) attached to the belt-like substrate 3b is read by a detection device (not shown), and an organic EL is performed by the sealant coating device 207a according to information of the detection device (not shown). It is coated on the top and the periphery of the device except for the extraction electrodes (not shown, corresponding to the extraction electrodes 102a and 106a in FIG. 1).
Thereafter, an alignment mark (not shown) attached to the band-shaped substrate 3b of the organic EL element is aligned with an alignment mark (not shown) of the sealing member 207b1 by the bonding device 207c, and the organic EL element is sealed. . At this stage, an organic EL panel is manufactured. Since the organic EL panels produced at this stage are continuously connected, they are cut into individual organic EL panels in a cutting step 208.

  The cutting process 208 includes a cutting device 208a and a collection box 208b. In the cutting device 208a, an alignment mark (not shown) attached to the band-shaped substrate 3b of the organic EL element or an alignment mark (not shown) of the sealing member 207b1 is read by a detection device (not shown). ) Is cut out according to the information in (2), and is collected in the collection box 208b as an individual organic EL panel 4.

  This figure shows a case where the process is divided into three steps of first electrode formation to hole transport layer formation, light emitting layer formation, and electron injection layer formation to cutting, but the first electrode formation to cutting is connected. It is also possible to carry out continuously. The cut organic EL panel has the same configuration as the organic EL panel manufactured in FIG.

  FIG. 8 is a schematic view showing an example of the manufacturing process in the case of forming the first electrode formation to the organic compound layer (hole transport layer) formation by another method in the manufacturing process shown in FIG. FIG. 8A shows an organic compound layer (holes) after forming a first electrode by forming an insulating layer on the first electrode forming film and forming a pattern in the shape of the first electrode having an extraction electrode. It is a schematic diagram which shows an example of the manufacturing process which forms a transport layer continuously in a vacuum environment. FIG. 8B shows a case where an organic compound layer (hole transport layer) is continuously formed on the first electrode forming film in a vacuum environment, and then an insulating layer is formed on the organic compound layer (hole transport layer). It is a schematic diagram which shows an example of the manufacturing process formed by pattern-forming into the shape of the 1st electrode which has a taking-out electrode. The subsequent light emitting layer forming step to cutting step are the same as those in FIG.

  The manufacturing process of FIG. 8A will be described. 7 differs from the manufacturing process from the formation of the first electrode to the formation of the organic compound layer (hole transport layer) shown in FIG. 7 in that 1) the entire surface film formation is not a mask pattern film formation. ) Patterning the first electrode forming film with an insulating layer to form a first electrode having an extraction electrode. In the figure, 202 'indicates a first electrode forming step. The first electrode forming step 202 'includes a vapor deposition apparatus 202'a having an evaporation source container 202'b and an accumulator 202'c. The accumulator 202'c is provided for speed adjustment with the next insulating layer forming step 209. In the first electrode forming step 202 ′, the first electrode (not shown, corresponding to the first electrode 102 in FIG. 1) is formed on the entire surface of the belt-like substrate 3 continuously supplied from the supplying step 201 by the vapor deposition apparatus 202′a. A working film is formed (see Step 2 in FIG. 5). The thickness of the first electrode forming film is preferably 100 nm to 200 nm.

  Reference numeral 209 denotes an insulating layer forming step. The insulating layer forming step 209 includes a vapor deposition apparatus 209a having an evaporation source container 209b and an accumulator 209c. The accumulator 209c is provided for speed adjustment with the hole transport layer forming step 203 of the next step. In the insulating layer forming step 209, the alignment mark (attached to the strip-shaped substrate 3) is formed on the first electrode-forming film formed on the entire surface of the strip-shaped substrate 3 continuously supplied from the first electrode forming step 202 ′. (Not shown) is read by a detection device (not shown), and a mask pattern of an insulating film is formed to form an individual first electrode having an extraction electrode in accordance with information from the detection device (not shown). Individual first electrodes having the shape are formed (see Step 3 in FIG. 5). The thickness of the insulating film is preferably 50 nm to 2 μm. Thereafter, in a hole transport layer forming step 203, an alignment mark (not shown) attached to the belt-like substrate 3 is read by a detection device (not shown), and a take-out electrode (not shown) is read according to information of the detection device (not shown). A hole transport layer (not shown, corresponding to the hole transport layer 103 in FIG. 1) is formed as a mask pattern except for the extraction electrode 102a in FIG. 1 (see Step 4 in FIG. 5). Reference numeral 3a ′ denotes a belt-like substrate on which a hole transporting layer wound up by a winding device (not shown) to be rolled is laminated.

  In this figure, the case where the insulating layer forming step and the first electrode forming step are formed by vapor deposition is shown, but the forming method is not particularly limited, and for example, a sputtering method or the like can be used. Moreover, although the case where the hole transport layer is formed by a vapor deposition method is shown in this drawing, the formation method is not particularly limited, and for example, it can be formed by a wet method using ink jets. Further, although this figure shows a case where the film is temporarily wound and stored at the stage where the hole transport layer is formed, it can also be continuously transferred to the light emitting layer forming step 204.

  Thereafter, the light emitting layer is formed and sent to the light emitting layer forming step 204 shown in FIG. 7, and thereafter, an electron injection layer and a second electrode are sequentially formed, an organic EL element is manufactured, and sealed in the sealing step. An EL panel is produced. The manufactured organic EL panel has the configuration shown in FIG. Other symbols are the same as those in FIG.

  The first electrode forming step 202 to the hole transport layer forming step 203 need to be performed continuously in a vacuum environment. “Continuously performing” means that each step of the first electrode forming step 202 to the hole transport layer forming step 203 is placed in a vacuum environment when moving to the next step. In addition, the first electrode forming step 202 ′, the insulating layer forming step 209, and the hole transport layer forming step 203 may have different vacuum environments due to different materials, and may be set to another vacuum environment. Of course, it may be performed in the same apparatus.

  In this figure, the hole transport layer is formed by vapor deposition, but it can also be formed by a wet method using ink jet. Further, although this figure shows a case where the film is temporarily wound and stored at the stage where the hole transport layer is formed, it can also be continuously transferred to the light emitting layer forming step 204 (see FIG. 7).

  The manufacturing process of FIG. 8B will be described. The reference numerals have the same meaning as in FIG. 7 differs from the manufacturing process from the formation of the first electrode to the formation of the organic compound layer (hole transport layer) shown in FIG. 7 in that 1) the entire surface film formation is not a mask pattern film formation. ) An organic compound layer (hole transport layer) is formed on the entire surface of the first electrode forming film. 3) A first electrode having an extraction electrode is formed on the organic compound layer (hole transport layer). For example, a mask pattern is formed as an insulating layer.

  In the manufacturing process of FIG. 8B, the first electrode (not shown, FIG. 8) is formed on the entire surface of the strip-shaped substrate 3 continuously supplied from the supply step 201 in the first electrode formation step 202 ′. A film for use (corresponding to the first electrode 102) is formed (see Step 2 in FIG. 6). Thereafter, in the hole transport layer forming step 203, hole transport is performed on the entire upper surface of the first electrode forming film formed on the entire surface of the belt-like substrate 3 continuously supplied from the first electrode forming step 202 ′. A layer (not shown, corresponding to the hole transport layer 103 in FIG. 1) is formed (see Step 3 in FIG. 6).

  Reference numeral 209 denotes an insulating layer forming step. The insulating layer forming step 209 includes a vapor deposition apparatus 209a having an evaporation source container 209b and an accumulator 209c. The accumulator 209c is provided for adjusting the speed when winding by a winding device (not shown) in the next process. In the insulating layer forming step 209, the alignment mark (non-alignment mark) attached to the belt-like substrate 3 is formed on the hole-transporting layer film formed on the entire surface of the belt-like substrate 3 continuously supplied from the hole-transporting layer forming step 203. (Not shown) is read by a detection device (not shown), and a mask pattern of an insulating film is formed to form an individual first electrode having an extraction electrode according to information of the detection device (not shown). The individual first electrode is formed (see Step 4 in FIG. 6). The thickness of the insulating film is preferably 50 nm to 2 μm. Reference numeral 3a ″ denotes a belt-like base material on which an insulating layer wound up by a winding device (not shown) and formed into a roll is laminated.

  In this figure, the case where the insulating layer forming step and the first electrode forming step are formed by vapor deposition is shown, but the forming method is not particularly limited, and for example, a sputtering method or the like can be used. Moreover, although the case where the hole transport layer is formed by a vapor deposition method is shown in this drawing, the formation method is not particularly limited, and for example, it can be formed by a wet method using ink jets. Further, although this figure shows a case where the film is temporarily wound and stored at the stage where the hole transport layer is formed, it can also be continuously transferred to the light emitting layer forming step 204.

  The hole transport layer reads an alignment mark (not shown) attached to the belt-like base material on which the first electrode forming film is formed with a detection device (not shown), and according to information of the detection device (not shown), It is also possible to form a hole transport layer in the shape of a first electrode having an extraction electrode by mask pattern deposition.

  The first electrode forming step 202 to the hole transport layer forming step 203 need to be performed continuously in a vacuum environment. “Continuously performing” means that each step of the first electrode forming step 202 to the hole transport layer forming step 203 is placed in a vacuum environment when moving to the next step. In addition, the first electrode forming step 202 ′, the insulating layer forming step 209, and the hole transport layer forming step 203 may have different vacuum environments due to different materials, and may be set to another vacuum environment. Of course, it may be performed in the same apparatus.

  FIG. 9 shows a roll-to-roll bonding method using a band-shaped substrate formed from the first electrode formation to the organic compound layer (hole transport layer) produced by the manufacturing process shown in FIGS. It is a schematic diagram which shows an example of the manufacturing process of the organic electroluminescent panel by a.

  In the figure, 5 indicates a manufacturing process. The manufacturing process 5 includes a first supply process 5a, a second supply process 5b, a sealant coating process 5c, a bonding process 5d, and a punching process 5e.

  The 1st supply process 5a has the supply process 5a1 of the roll-shaped strip | belt-shaped 1st base material 5a12, and the light emitting layer formation process 5a2 which forms a light emitting layer. The first supply process 5a shown in this figure is a process in which the supply process 5a1 to the light emitting layer forming process 5a3 are continuously performed under atmospheric pressure conditions, and a light emitting layer is formed on the first substrate 5a12. This is a step of supplying the first member.

  The following base materials can be used as the first base material 5a12. 1) Substrate on which the first electrode / hole transport layer is laminated in the manufacturing process shown in FIG. 7; 2) The first electrode / insulating layer / hole transport layer shown in FIG. 8A is laminated. Substrate, 3) A substrate in which the first electrode / hole transport layer / insulating layer shown in FIG. 8B are laminated. This figure will be described in the case of a substrate on which the first electrode / hole transport layer is laminated in the manufacturing process shown in FIG. An alignment mark (see FIG. 4) indicating the position of each anode (first electrode) is attached before and after each anode (first electrode).

  The supply process 5a1 has a feeding part 5a13 and a first antistatic means 5a14. In the feeding portion 5a13, the first electrode / hole transport layer is laminated in the manufacturing process shown in FIG. 7, and the belt-like first base material 5a12 wound around the winding core is supplied. It has become. The first antistatic means 5a14 has a non-contact type antistatic device 5a141 and a contact type antistatic device 5a142. The non-contact type antistatic device 5a141 is the same as the noncontact type antistatic device 204a11 shown in FIG. The contact type antistatic device 5a142 is the same as the contact type antistatic device 204a12 shown in FIG. The method of using the non-contact type antistatic device 5a141 and the contact type antistatic device 5a142 is also the same as that of the contact type antistatic device 5a142 and the contact type antistatic device 204a12 shown in FIG.

  The light emitting layer forming step 5a2 includes a backup roll 5a21 that holds the first base material 5a12, a wet coater 5a22 that applies the light emitting layer forming coating liquid to the first base material 5a12 held by the backup roll 5a21, A drying device 5a23 for removing the solvent of the light emitting layer formed on the hole transport layer (not shown, corresponding to the hole transport layer 103 in FIG. 1) of the substrate 5a12, and a light emitting layer from which the solvent has been removed ( A heat treatment device 5a24 for heating (not shown, corresponding to the light emitting layer 104 in FIG. 1) and a second antistatic means 5a25.

  The coating liquid for forming the light emitting layer by the first wet coater 5a22 detects the alignment mark (see FIG. 47) attached to the first base material 5a12 with an alignment mark detector (not shown), and has already been formed. (On the first electrode) (not shown, corresponding to the anode (first electrode) 102 in FIG. 1) except on the extraction electrode (not shown, corresponding to the extraction electrode 102a in FIG. 1) on the hole transport layer Applied.

  Examples of the wet coater that can be used for the wet coater 5a22 include a die coating method, a screen printing method, a flexographic printing method, an ink jet method, a Mayer bar method, a cap coating method, a spray coating method, a casting method, a roll coating method, and a bar. A coating machine such as a coating method or a gravure coating method can be used. The use of these wet coating machines can be appropriately selected according to the material of the organic compound layer.

  As drying conditions for removing the solvent of the light emitting layer in the drying device 5a23, in consideration of drying unevenness, blown rough surface of the coating film, etc., the discharge air velocity of the dry air from the discharge port is 0.1 to 5 m / s, in the width direction. Examples include air-flow drying with a wind speed distribution of 0.1 to 10%.

  As the heat treatment conditions of the light emitting layer in the heat treatment unit 5a24, considering the smoothness improvement of the light emitting layer, the removal of the residual solvent, the curing of the light emitting layer, etc., −30 to + 30 ° C. with respect to the glass transition temperature of the light emitting layer, and In addition, it is preferable to perform heat treatment of the back surface heat transfer method at a temperature not exceeding the decomposition temperature of the organic compound constituting the light emitting layer.

  In the case where the light emitting layer (not shown, corresponding to the light emitting layer 104 in FIG. 1) is a multilayer, it is necessary to dispose the application / drying unit according to the number of layers. For example, a white element can be manufactured by forming a light emitting layer in multiple layers. In the present invention, the light emitting layer refers to a blue light emitting layer, a green light emitting layer, and a red light emitting layer. There is no restriction | limiting in particular as a lamination order in the case of laminating | stacking a light emitting layer, You may have a nonluminous intermediate | middle layer between each light emitting layer. In the present invention, it is preferable that at least one blue light emitting layer is provided at a position closest to the anode among all the light emitting layers. Also, when four or more light emitting layers are provided, for example, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting layer, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting from the order close to the anode. Layered / green light emitting layer, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting layer / green light emitting layer / red light emitting layer, etc. It is preferable for improving luminance stability.

  The total thickness of the light emitting layer is not particularly limited, but is usually selected in the range of 2 nm to 5 μm, preferably 2 to 200 nm in consideration of the uniformity of the film and the voltage required for light emission. Furthermore, it is preferable that it exists in the range of 10-20 nm. A film thickness of 20 nm or less is preferable because it has the effect of improving the stability of the emission color with respect to the driving current as well as the voltage surface. The film thickness of each light emitting layer is preferably selected in the range of 2 to 100 nm, and more preferably in the range of 2 to 20 nm. Although there is no restriction | limiting in particular about the film thickness relationship of each light emitting layer of blue, green, and red, It is preferable that the blue light emitting layer (the sum total when there are two or more layers) is the thickest among three light emitting layers.

  The second antistatic means 5a25 has a non-contact type antistatic device 5a251 and a contact type antistatic device 5a252. The non-contact type antistatic device 5a251 is preferably used on the hole transport layer side, and the contact type antistatic device 5a252 is preferably used on the back surface side of the first substrate 5a12. The second antistatic means 5a25 removes the charge on the light emitting layer surface and the back surface of the first base material 5a12, and prevents dust from adhering and preventing dielectric breakdown, thereby improving the yield of the organic EL element. The non-contact type antistatic device 5a251 and the contact type antistatic device 5a252 used for the second antistatic means 5a25 are the same as the noncontact type antistatic device 5a161 and the contact type antistatic device 5a162 used for the first antistatic means 5a16. Those are preferred.

  Thus, by completing the light emitting layer forming step 5a2, an anode (first electrode) (not shown, corresponding to the anode (first electrode) 102 in FIG. 1) is formed on the first base material 5a12. A first member 5a4 formed in the order of a hole transport layer (not shown, corresponding to the hole transport layer 103 in FIG. 1) and a light emitting layer (not shown, corresponding to the light emitting layer 104 in FIG. 1) is prepared. The The first member 5a4 continues to be sent to the sealant coating step 5c. It is preferable to arrange an accumulator between the light emitting layer forming step 5a2 and the sealant coating step 5c for speed adjustment. In addition, although this figure has shown the case where it sends to the sealing agent coating process 5c continuously, you may wind up and collect | recover the 1st member 5a4 once in roll shape.

  The light emitting layer forming step 5a2 shown in this figure shows a case where there is one wet coating device, one drying device, and one heat treatment device, but it can be increased as necessary.

The light emitting layer forming coating solution used in the wet coater 5a22 has at least one organic compound material and at least one solvent, and has a surface tension of 15 × in consideration of repelling during coating, coating unevenness, and the like. 10 is preferably ^{-3 ~55 × 10 -3 N / m} .

  In the step of forming the light emitting layer, which is a constituent layer of the organic EL element shown in this figure, the dew point temperature is −20 ° C. or lower and JISB 9920 is taken into consideration in order to maintain the performance of the light emitting layer, prevent failure defects due to foreign matter adhesion, and the like. The measured cleanliness is preferably class 5 or less, and is formed under atmospheric pressure conditions of 10 to 45 ° C. excluding the first drying section and the second drying section. In the present invention, cleanliness of class 5 or less means class 3 to class 5.

  In the second supply step 5b, the second member 5b4 having at least a cathode (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1) formed on the second base 5b12 is supplied. The In the case of this figure, a cathode (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1), a cathode buffer layer (electron injection layer) (not shown) on the second substrate 5b12. 2 shows the case of the second member 5b4 on which the cathode buffer layer (electron injection layer) 105 in FIG. 1 is formed. A barrier layer may be provided between the second substrate 5b12 and the cathode (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1).

  In the second supply process 5b, a cathode formation (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1) and the supply process 5b1 of the roll-shaped second base material 5b12 is formed. Step 5b2 and a cathode buffer layer (electron injection layer) forming step 5b3 for forming a cathode buffer layer (electron injection layer) (not shown, corresponding to the cathode buffer layer (electron injection layer) 105 in FIG. 1). ing. The second supply step shown in this figure is a step (dry process step) in which the cathode forming step 5b2 and the cathode buffer layer (electron injection layer) forming step 5b3 are performed under reduced pressure conditions. In the supplying step 5b1, the second base material 5b12 wound in a roll shape is supplied. The second base material 5b12 is provided with an alignment mark (not shown) in alignment with an alignment mark (see FIG. 4) indicating the position of the first electrode.

  The cathode (second electrode) formation step 5b2 includes an alignment mark detection device 5b21 that detects an alignment mark (not shown) attached to the second base material 5b12, a cathode (second electrode) formation unit 5b22, and an accumulator 5b23. Have. In the cathode (second electrode) forming portion 5b22, a cathode (second electrode) (not shown, cathode (second electrode) in FIG. 1) is placed at a predetermined position on the second base material 5b12 according to the information of the alignment mark detection device 5b21. 106) is formed. Reference numeral 5b221 denotes a vapor deposition apparatus, and 5b222 denotes an evaporation source container.

  The cathode buffer layer (electron injection layer) formation step 5b3 includes an accumulator 5b31 and an alignment mark (not shown) indicating the position of the groove portion of the accumulator 5b31 and the cathode (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1). And an alignment mark detection device 5b32 for detecting a cathode buffer layer (electron injection layer) forming portion 5b33. In the cathode buffer layer (electron injection layer) forming portion 5b33, an extraction electrode (second electrode) (not shown) is disposed on the cathode (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1). Except for the extraction electrode 106a in FIG. 1, a cathode buffer layer (electron injection layer) (not shown, corresponding to the cathode buffer layer (electron injection layer) 105 in FIG. 1) is formed. Reference numeral 5b331 denotes a vapor deposition apparatus, and 5b332 denotes an evaporation source container.

  By completing the cathode buffer layer (electron injection layer) forming step 5b3, a cathode (second electrode) (not shown, corresponding to the cathode (second electrode) 106 in FIG. 1) on the second base material 5b12, A second member 5b4 formed in the order of a cathode buffer layer (electron injection layer) (not shown, corresponding to the cathode buffer layer (electron injection layer) 105 in FIG. 1) is prepared. The second member 5b4 is subsequently sent to the bonding step 2d. In addition, although this figure has shown the case where the 2nd member 5b4 is sent to the bonding process 5d continuously, you may wind up and collect | recover the 2nd member 5b4 once in roll shape.

  This figure shows the case where the cathode (second electrode) forming step 5b2 and the cathode buffer layer (electron injection layer) forming step 5b3 are vapor deposition apparatuses, but the cathode (second electrode) and the cathode buffer layer (electron injection layer). There is no particular limitation on the formation method of, for example, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma polymerization method, plasma CVD method, laser. A CVD method, a thermal CVD method, a coating method, or the like can be used.

  The cathode buffer layer (electron injection layer) is desirably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm.

  The sealant coating step 5c includes a sealant coating device 5c1, a mounting table 5c2 for mounting the first member 5a4 sent from the first supply step 5a, and an alignment mark attached to the first member 5a4. And a detection device 5c3 (see FIG. 4). By the sealant coating device 5c1, an adhesive as a sealant is formed around the functional layer laminated on the first substrate 5a12 (anode (first electrode) / hole transport layer / light emitting layer). (First electrode) (not shown, corresponding to the anode (first electrode) 102 in FIG. 1) is applied except for an extraction electrode (not shown, corresponding to the extraction electrode 102a in FIG. 1).

  In the bonding step 5d, the first member 5a4 sent from the first supply step 5a and the second member 5b4 sent from the second supply step 5b are detected from the alignment marks attached to each other. The first base 5a12 and the second base 5b12 are sealed with an adhesive by detecting with a machine (not shown) and bonding the alignment marks to each other at a position facing each other. Between the material 5a12 and the second substrate 5b12, an anode (first electrode) (not shown, corresponding to the anode (first electrode) 102 in FIG. 1) and a cathode (second electrode) (not shown, FIG. 1) The organic EL element 6 connected in a strip shape having a configuration in which the cathode (corresponding to the second electrode 106) is opposed is manufactured.

  There is no limitation in particular as a bonding apparatus used by the bonding process 5d, It is preferable to carry out on heating conditions in a pressure-reduced environment. There is no particular limitation on the heating method, and examples include heating the entire interior, using a heating roll, and pressing with a heating plate. Among these, it is preferable to use pressure bonding by a heating roll or a heating plate to which heat is directly transmitted from the viewpoint of bonding stability and adhesion stability.

  The temperature and pressure reduction during the bonding of the laminating device 5d1 shown in the figure vary depending on the type of adhesive used, the type of light emitting layer, and the type of cathode buffer layer (electron injection layer). Although it is difficult, it is necessary to determine by prior experiments within a range that does not affect each layer constituting the organic EL element.

  The punching process 5e includes a punching device 5e1 and an accumulator 5e2. The punching device 5e1 performs punching for individually separating the organic EL panels 6 connected in a band shape sent from the bonding step 5d. By completing the punching process 5e, the organic EL element 6a having the configuration shown in FIG. 1 is manufactured. Reference numeral 5e3 denotes a roll skeleton obtained by winding up and collecting a skeleton obtained by punching an organic EL panel.

  The first supply process 5a, the second supply process 5b, the sealing agent coating process 5c, the bonding process 5d, and the first member 5a4, the second member 5b4 and the strips up to the punching process 5e shown in this figure The transport of the connected organic EL panel 6 is controlled by an EPC (not shown) disposed in the transport path of each process.

  FIG. 10 is a schematic view showing an example of a manufacturing process of an organic EL panel having an organic EL element produced by a laminating method using a single-wafer substrate and having a close sealing structure with a sealing member. FIG. 10 (a) uses a single-wafer substrate, and an organic EL element produced by a lamination method in which a first electrode is continuously formed in a vacuum environment with a mask pattern and a hole transport layer sealed with a sealing member. It is a schematic diagram which shows an example of the manufacturing process of the organic electroluminescent panel which has a stop structure. FIG. 10B shows an organic EL device produced by a lamination method in which a single-wafer substrate is used and a first electrode is continuously formed with a mask pattern and a hole transport layer in a vacuum environment. It is a schematic diagram which shows an example of the manufacturing process of the organic electroluminescent panel which has a stop structure. FIG. 10C shows an organic compound layer (hole transport layer) continuously formed on the first electrode forming film in a vacuum environment, and then an insulating layer on the organic compound layer (hole transport layer). It is a schematic diagram which shows an example of the manufacturing process which forms.

  The manufacturing process shown in FIG. In the drawing, reference numeral 7a denotes a manufacturing process of the organic EL panel. The manufacturing process 7a includes a single-wafer base material supply step 701, a first electrode formation step 702, a hole transport layer formation step 703, a light emitting layer formation step 704, an electron injection layer formation step 705, and a second electrode formation step. 706, a sealing step 707, and a recovery step 708.

  From the supply step 701, the single-wafer substrate 8 is supplied to the first electrode formation step 702 to a supply device (not shown). Reference numeral 701a denotes a substrate cleaning apparatus for cleaning the surface of the single-wafer substrate 8 in order to improve the vapor deposition property before the first electrode is vapor-deposited on the surface of the single-wafer substrate 8 supplied from the supply step 701. It is preferable to attach an alignment mark (not shown) for determining the position where the first electrode is to be formed in advance to the single-wafer substrate 8 (see Step 1 in FIG. 4).

  The first electrode forming step 702 includes a vapor deposition apparatus 702a having an evaporation source container 702b. In the first electrode formation step 702, an alignment mark (not shown) attached to the single-wafer substrate 8 supplied from the supply step 701 is read by a detection device (not shown), and a vapor deposition device is provided according to information from the detection device (not shown). A first electrode (not shown, corresponding to the first electrode 102 in FIG. 1) having an extraction electrode at a position determined by 702a is formed as a mask pattern (see Step 2 in FIG. 4). The thickness of the first electrode is preferably 100 nm to 200 nm.

  The hole transport layer forming step 703 includes a vapor deposition apparatus 703a having an evaporation source container 703b. In the hole transport layer forming step 703, an alignment mark (not shown) attached on the single-wafer substrate 8 sent from the first electrode forming step 702 is read by a detecting device (not shown), and the detecting device (not shown) Except for the extraction electrode portion of the first electrode having the extraction electrode formed on the single-wafer substrate 8 by the vapor deposition apparatus 703a according to the information of the illustration, a hole transport layer (not shown, hole transport layer of FIG. 1) is formed on the first electrode. (Corresponding to 103) is formed as a mask pattern (see Step 3 in FIG. 4). Thereafter, it is sent to the light emitting layer forming step 204. After the hole transport layer is formed, primary storage is also possible. This figure shows the case where it sends to the light emitting layer formation process 704 continuously. The thickness of the hole transport layer is about 5 nm to 5 μm, preferably 5 nm to 200 nm.

  The first electrode forming step 702 to the hole transport layer forming step 703 need to be performed continuously in a vacuum environment. “Continuously performing” means that a vacuum environment is also maintained when moving from the first electrode forming step 702 to the hole transport layer forming step 703 to the next step. In addition, the first electrode formation step 702 and the hole transport layer formation step 703 have different vacuum environments due to different materials, and may be set to different vacuum environments. Of course, in the same apparatus. You can go. In this figure, the hole transport layer is formed by vapor deposition, but it can also be formed by a wet method using ink jet.

  The light emitting layer forming step 704 includes a vapor deposition device 704a having an evaporation source container 704b. In the light emitting layer forming step 704, an alignment mark (not shown) attached on the single-wafer substrate 8 on which the layers up to the hole transport layer sent from the hole transport layer forming step 703 are stacked is detected by a detection device (not shown). ) And a light emitting layer (not shown, not shown) on the first electrode except for the take-out electrode portion of the first electrode having the take-out electrode formed on the single-wafer substrate 8 by the vapor deposition device 704a according to the information of the detection device (not shown). 1 corresponds to one light emitting layer 104). Then, it is sent to the electron injection layer forming step 705. The thickness of the light emitting layer is about 2 nm to 5 μm, preferably 2 nm to 200 nm. In addition, when a light emitting layer is a multilayer, it can respond by arrange | positioning a vapor deposition apparatus according to the number of layers.

  The electron injection layer forming step 705 includes a vapor deposition device 705a having an evaporation source container 705b. In the electron injection layer forming step 705, an alignment mark (not shown) attached on the single-wafer substrate 8 on which the light emitting layers sent from the light emitting layer forming step 704 are stacked is read by a detection device (not shown). The electron injection layer (not shown, the electron of FIG. 1) is formed on the light emitting layer except for the extraction electrode portion of the first electrode having the extraction electrode formed on the single-wafer substrate 8 by the vapor deposition device 705a according to the information of the detection device (not shown). (Corresponding to the injection layer 105) is formed into a mask pattern. Then, it is sent to the second electrode forming step 706. The thickness of the electron injection layer is preferably in the range of 0.1 nm to 5 μm.

  The second electrode forming step 706 includes a vapor deposition apparatus 706a having an evaporation source container 706b. In the second electrode formation step 706, an alignment mark (not shown) attached to the single-wafer substrate 8 on which the electron injection layer supplied from the electron injection layer formation step 705 is stacked is read by a detection device (not shown), A second electrode (cathode) (not shown, shown in FIG. 1) having a take-out electrode (not shown, corresponding to the take-out electrode 106a in FIG. 1) at a position determined by the vapor deposition device 706a according to information of a detection device (not shown). A mask pattern is formed on an already formed electron injection layer (not shown, corresponding to the electron injection layer 105 in FIG. 1). The sheet resistance as the second electrode (cathode) is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm. At this stage, an organic EL device having a configuration of base material / first electrode (anode) / hole transport layer / light emitting layer / electron injection layer / second electrode (cathode) is completed.

  In this figure, the case where the insulating layer forming step and the first electrode forming step are formed by vapor deposition is shown, but the forming method is not particularly limited, and for example, a sputtering method or the like can be used. Moreover, although the case where the hole transport layer is formed by a vapor deposition method is shown in this drawing, the formation method is not particularly limited, and for example, it can be formed by a wet method using ink jets. Further, in this drawing, the second electrode (cathode) forming step 705 and the cathode buffer layer (electron injection layer) forming step 206 are shown for the vapor deposition apparatus, but the second electrode (cathode) and cathode buffer layer (electron injection layer) are shown. The method for forming the layer) is not particularly limited. For example, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma polymerization method, plasma CVD method Laser CVD method, thermal CVD method, coating method and the like can be used.

  The sealing step 707 includes a sealant coating device 707a, a sealing member stacking device 707b, and a sealing member bonding device 707c. In the sealant coating device 707a, an alignment mark (not shown) attached to the sheet substrate 8 is read by a detection device (not shown), and according to information of the detection device (not shown), the sealant coating device 707a The organic EL element is coated on and around the organic EL element except for an extraction electrode (not shown, corresponding to the extraction electrode 102a and the extraction electrode 106a in FIG. 1).

  In the sealing member stacking device 707b, an alignment mark (not shown) attached to the single-wafer substrate 8 is detected on the organic EL element on which the sealing agent placed on the mounting table is coated. ) And the sealing members 9 are stacked in accordance with information from a detection device (not shown). Then, the organic EL panel sealed with the sealing member 9 is produced by pressing with the sealing member bonding apparatus 707c.

  In the collecting step 708, an alignment mark (not shown) attached to the single-wafer substrate 8 of the organic EL element is read by a detection device (not shown) and punched by a punching and cutting device (not shown) according to information of the detection device (not shown). The organic EL panel 10 is collected.

  The manufacturing process shown in FIG. 10B will be described. Note that the manufacturing process shown in this figure is the same as that in FIG. The difference from the manufacturing process from the formation of the first electrode to the formation of the organic compound layer (hole transport layer) shown in FIG. 10 (a) is that 1) the film formation for the first electrode is not a mask pattern film formation, 2) Patterning the first electrode forming film with an insulating layer to form a first electrode having an extraction electrode.

  In the drawing, reference numeral 702 'denotes a film forming process for the first electrode. The film forming process 702 ′ includes a vapor deposition apparatus 702′a having an evaporation source container 702′b. In the film formation step 702 ′, a vapor deposition apparatus 702′a is used to form a first electrode (not shown, corresponding to the first electrode 102 in FIG. 1) on the entire surface of the single-wafer substrate 8 continuously supplied from the supply step 701. A film is formed (see FIG. 5 Step 2). The thickness of the film for the first electrode is preferably 100 nm to 200 nm.

  Reference numeral 709 denotes an insulating layer forming step. The insulating layer forming step 709 includes a vapor deposition device 709a having an evaporation source container 709b. In the insulating layer forming step 709, an alignment mark (not shown) attached to the single-wafer substrate 8 is detected on the first electrode film formed on the entire surface of the single-wafer substrate 8 supplied from the film-forming step 702 ′. A mask pattern of an insulating film is formed in order to obtain a shape of an individual first electrode having an extraction electrode in accordance with information from a detection device (not illustrated), and an individual first having an extraction electrode is formed. An electrode is formed (see FIG. 5 Step 3). The thickness of the insulating film is preferably 50 nm to 2 μm. Thereafter, in a hole transport layer forming step 703, an alignment mark (not shown) attached to the single-wafer substrate 8 is read by a detection device (not shown), and an extraction electrode (not shown, A hole transport layer (not shown, corresponding to the hole transport layer 103 in FIG. 1) is formed as a mask pattern except for the extraction electrode 102a in FIG. 1 (see Step 4 in FIG. 5). Thereafter, the light-emitting layer is formed and sent to the light-emitting layer forming step 704. Thereafter, an electron injection layer and a second electrode are sequentially formed, an organic EL element is manufactured, and sealing is performed in a sealing step to manufacture an organic EL panel. The The manufactured organic EL panel has the configuration shown in FIG. As in the manufacturing process shown in FIG. 10A, after the hole transport layer is formed, it can be stored temporarily. This figure shows the case where it sends to the light emitting layer formation process 704 continuously. Other symbols are synonymous with FIG.

  The first electrode forming step 702 to the hole transport layer forming step 703 need to be performed continuously in a vacuum environment. Performing continuously means that each step of the first electrode formation step 702 to the hole transport layer formation step 703 is placed in a vacuum environment when moving to the next step. In addition, the first electrode forming step 202 ′, the insulating layer forming step 209, and the hole transport layer forming step 203 may have different vacuum environments due to different materials, and may be set to another vacuum environment. Of course, it may be performed in the same apparatus.

  The manufacturing process of FIG. 10C will be described. Reference numerals are the same as those in FIGS. 10 (a) and 10 (b). The difference from the manufacturing process from the formation of the first electrode to the formation of the organic compound layer (hole transport layer) shown in FIG. 10 (a) is that 1) the film formation for the first electrode is not a mask pattern film formation, 2) An organic compound layer (hole transport layer) is formed on the entire surface of the film for the first electrode. 3) A first electrode having an extraction electrode is formed on the organic compound layer (hole transport layer). An insulating layer for forming a mask pattern may be mentioned.

  In the manufacturing process of FIG. 10C, the first electrode (not shown, the first electrode 102 in FIG. 1) is formed on the entire surface of the single-wafer substrate 8 supplied from the supply step 701 in the film forming step 702 ′ by the vapor deposition apparatus 202′a. (Refer to Step 2 in FIG. 6). Thereafter, in a hole transport layer forming step 703, a hole transport layer (not shown, FIG. 5) is formed on the entire upper surface of the first electrode forming film formed on the entire surface of the single-wafer substrate 8 supplied from the film forming step 702 ′. 1 (corresponding to one hole transport layer 103) is formed (see Step 3 in FIG. 6). The hole transport layer reads an alignment mark (not shown) attached to the single-wafer substrate 8 on which the first electrode forming film is formed by a detection device (not shown), and according to information of the detection device (not shown). It is also possible to form a hole transport layer in the shape of a first electrode having an extraction electrode by mask pattern deposition. In the case of the manufacturing process shown in this figure, the first electrode formation step 702 to the hole transport layer formation step 703 need to be performed continuously in a vacuum environment.

  Hereinafter, the substrate, the barrier layer, the first electrode, the hole transport layer, the light emitting layer, the cathode buffer layer (electron injection layer), the second electrode, the sealing member, etc. constituting the organic EL device of the present invention are attached. explain.

(Base material)
Examples of the base material include a single-wafer sheet-like substrate and a strip-like flexible substrate. Examples of the sheet substrate include a transparent glass plate and a sheet-like transparent resin film. Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones, poly Cycloolefin resins such as ether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Apel (trade name, manufactured by Mitsui Chemicals) Can be mentioned. A transparent resin film is mentioned as a strip | belt-shaped base material, The same resin film as a sheet | seat base material can be used.

When a transparent resin film is used as the substrate, a barrier layer is preferably formed on the surface of the resin film as necessary. Examples of the barrier layer include an inorganic film, an organic film, or a hybrid film of both. As a characteristic of the barrier layer, the water vapor permeability is preferably 0.01 g / m ² · day or less. Furthermore, a high barrier film having an oxygen permeability of 0.1 ml / m ² · day · MPa or less and a water vapor permeability of 10 ⁻⁵ g / m ² · day or less is preferable.

  As a material for forming the barrier layer, any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and layers made of organic materials. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times. The method for forming the barrier layer is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma polymerization A plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.

  In addition, when manufacturing an organic electroluminescent panel by the bonding method, the 1st base material used for the 1st electrode (anode) side can also use the said base material. In addition, the second base material used on the second electrode (cathode) side can also use the above base material.

(Barrier layer)
Examples of the barrier layer provided on the surface of the resin film as needed include inorganic and organic barrier layers or a hybrid barrier layer of both. As a material for forming the barrier layer, any material may be used as long as it has a function of suppressing intrusion of an element such as moisture or oxygen that causes deterioration of the element. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and layers made of organic materials. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times. The method for forming the barrier layer is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma polymerization A plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable. The materials used for these barrier layers can also be used for the second belt-like substrate and the belt-like flexible adhesive member.

As a characteristic of the barrier layer, it is preferable that the water vapor permeability is 0.01 g / m ² / day or less. Furthermore, a high barrier film having an oxygen permeability of 10 ⁻³ ml / m ² / day / MPa or less and a water vapor permeability of 10 ⁻⁵ g / m ² / day or less is preferable.

(First electrode (anode))
As the first electrode (anode), an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such an electrode substance include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO ₂ , and ZnO. Alternatively, an amorphous material such as IDIXO (In ₂ O ₃ .ZnO) capable of forming a transparent conductive film may be used. Alternatively, a coatable substance such as an organic conductive compound can be used. In the case where light emission is extracted from the first electrode (anode), it is desirable that the transmittance be greater than 10%, and the sheet resistance as the first electrode (anode) is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 to 1000 nm, preferably 10 to 200 nm.

(Hole injection layer (anode buffer layer))
A hole injection layer (anode buffer layer) may be present between the first electrode (anode) and the light emitting layer or the hole transport layer. The hole injection layer is a layer provided between the electrode and the organic layer in order to lower the driving voltage and improve the luminance of light emission. “The organic EL element and the forefront of industrialization (November 30, 1998, NTS) The details are described in the second volume, Chapter 2, “Electrode Materials” (pages 123 to 166) of “The Company”. The details of the anode buffer layer (hole injection layer) are described in JP-A Nos. 9-45479, 9-260062, and 8-288069. Specific examples thereof include copper phthalocyanine. Examples thereof include a phthalocyanine buffer layer, an oxide buffer layer typified by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.

(Hole transport layer)
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers. The hole transport material has any one of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.

  The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound. Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-4,4'-diaminophenyl; N, N'-diphenyl-N, N'- Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' − (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4′-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and also two of those described in US Pat. No. 5,061,569. Having a condensed aromatic ring in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-3086 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 8 are linked in a starburst type ( MTDATA) and the like.

  Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.

  JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.

(Light emitting layer)
The light emitting layer refers to a blue light emitting layer, a green light emitting layer, and a red light emitting layer. There is no restriction | limiting in particular as a lamination order in the case of laminating | stacking a light emitting layer, You may have a nonluminous intermediate | middle layer between each light emitting layer. In the present invention, it is preferable that at least one blue light emitting layer is provided at a position closest to the anode among all the light emitting layers. Also, when four or more light emitting layers are provided, for example, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting layer, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting from the order close to the anode. Layered / green light emitting layer, blue light emitting layer / green light emitting layer / red light emitting layer / blue light emitting layer / green light emitting layer / red light emitting layer, etc. It is preferable for improving luminance stability. A white element can be manufactured by forming a light emitting layer in multiple layers.

  The total thickness of the light emitting layer is not particularly limited, but is usually selected in the range of 2 nm to 5 μm, preferably 2 to 200 nm in consideration of the uniformity of the film and the voltage required for light emission. Furthermore, it is preferable that it exists in the range of 10-20 nm. A film thickness of 20 nm or less is preferable because it has the effect of improving the stability of the emission color with respect to the driving current as well as the voltage surface. The film thickness of each light emitting layer is preferably selected in the range of 2 to 100 nm, and more preferably in the range of 2 to 20 nm. Although there is no restriction | limiting in particular about the film thickness relationship of each light emitting layer of blue, green, and red, It is preferable that the blue light emitting layer (the sum total when there are two or more layers) is the thickest among three light emitting layers.

  The light emitting layer includes at least three layers having different emission spectra, each having an emission maximum wavelength in the range of 430 to 480 nm, 510 to 550 nm, and 600 to 640 nm. If it is three or more layers, there will be no restriction | limiting in particular. When there are more than four layers, there may be a plurality of layers having the same emission spectrum. A layer having an emission maximum wavelength in the range of 430 to 480 nm is referred to as a blue light emitting layer, a layer in the range of 510 to 550 nm is referred to as a green light emitting layer, and a layer in the range of 600 to 640 nm is referred to as a red light emitting layer. Moreover, in the range which maintains the said maximum wavelength, you may mix a several luminescent compound in each light emitting layer. For example, the blue light emitting layer may be used by mixing a blue light emitting compound having a maximum wavelength of 430 to 480 nm and a green light emitting compound having the same wavelength of 510 to 550 nm.

  The organic light emitting material used as the material of the light emitting layer is (a) charge injection function, that is, holes can be injected from the anode or hole injection layer when an electric field is applied, and electrons are injected from the cathode or electron injection layer. (B) a transport function, that is, a function that moves injected holes and electrons by the force of an electric field, and (c) a light emission function, that is, a recombination field of electrons and holes. However, there is no particular limitation as long as it has the three functions of connecting these to light emission. For example, fluorescent whitening agents such as benzothiazole, benzimidazole, and benzoxazole, and styrylbenzene compounds can be used. Specific examples of the above-mentioned optical brightener include 2,5-bis (5,7-di-t-pentyl-2-benzoxazolyl) -1,3,4-thiadiazole in the benzoxazole series, 4 , 4'-bis (5,7-t-pentyl-2-benzoxazolyl) stilbene, 4,4'-bis [5,7-di- (2-methyl-2-butyl) -2-benzoxa Zoolyl] stilbene, 2,5-bis (5,7-di-t-pentyl-2-benzoxazolyl) thiophene, 2,5-bis [5-α, α-dimethylbenzyl-2-benzoxazoli Ru] thiophene, 2,5-bis [5,7-di- (2-methyl-2-butyl) -2-benzoxazolyl] -3,4-diphenylthiophene, 2,5-bis (5-methyl) -2-benzoxazolyl) thiophene, 4,4'-bis (2 -Benzoxazolyl) biphenyl, 5-methyl-2- [2- [4- (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole, 2- [2- (4-chlorophenyl) vinyl Naphtho [1,2-d] oxazole and the like. Examples of the benzothiazole type include 2,2 '-(p-phenylenedivinylene) -bisbenzothiazole, and examples of the benzimidazole type include 2- [2- [4- (2-benzimidazolyl) phenyl] vinyl] benzimidazole. 2- [2- (4-carboxyphenyl) vinyl] benzimidazole and the like. In addition, other useful compounds are listed in Chemistry of Synthetic Soybean (1971), pages 628-637 and 640. Specific examples of the styrylbenzene compound include 1,4-bis (2-methylstyryl) benzene, 1,4-bis (3-methylstyryl) benzene, 1,4-bis (4-methylstyryl). ) Benzene, distyrylbenzene, 1,4-bis (2-ethylstyryl) benzene, 1,4-bis (3-methylstyryl) benzene, 1,4-bis (2-methylstyryl) -2-methylbenzene, 1,4-bis (2-methylstyryl) -2-ethylbenzene and the like can be mentioned.

  Further, in addition to the above-described optical brightener and styrylbenzene compound, for example, 12-phthaloperinone, 1,4-diphenyl-1,3-butadiene, 1,1,4,4-tetraphenyl-1,3- Butadiene, naphthalimide derivatives, perylene derivatives, oxadiazole derivatives, aldazine derivatives, pyrazirine derivatives, cyclopentadiene derivatives, pyrrolopyrrole derivatives, styrylamine derivatives, coumarin compounds, international publications WO 90/13148 and Appl. Phys. Lett. , Vol 58, 18, P1982 (1991), and aromatic dimethylidin compounds. Specific examples of the aromatic dimethylidin compounds include 1,4-phenylene dimethylidin, 4,4'-phenylene dimethylidin, 2,5-xylylene dimethylidin, 2,6-naphthylene dimethylidin, 1,4-biphenylenedimethylidin, 1,4-p-terephenylenedimethylidin, 4,4'-bis (2,2-di-t-butylphenylvinyl) biphenyl, 4,4'-bis (2 , 2-diphenylvinyl) biphenyl and the like, and derivatives thereof. Specific examples of the compound represented by the general formula (I) include bis (2-methyl-8-quinolinolato) (p-phenylphenolate) aluminum (III), bis (2-methyl-8-quinolinolato). ) (1-naphtholate) aluminum (III) and the like.

  In addition, a compound in which the above-described organic light-emitting material is used as a host and the host is doped with a strong fluorescent dye from blue to green, for example, coumarin-based or the same fluorescent dye as the host, is also suitable as the organic light-emitting material. When the above-described compound is used as the organic light-emitting material, blue to green light emission (the emission color varies depending on the type of dopant) can be obtained with high efficiency. Specific examples of the host that is the material of the compound include organic light-emitting materials having a distyrylarylene skeleton (particularly preferably, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl). Specific examples of the dopant which is a material of diphenylaminovinylarylene (particularly preferably, for example, N, N-diphenylaminobiphenylbenzene and 4,4′-bis [2- [4- (N, N-di- -P-tolyl) phenyl] vinyl] biphenyl).

  The light emitting layer preferably contains a known host compound and a known phosphorescent compound (also referred to as a phosphorescent compound) in order to increase the light emission efficiency of the light emitting layer.

  The host compound is a compound contained in the light-emitting layer, the mass ratio in the layer is 20% or more, and the phosphorescence quantum yield of phosphorescence emission is 0.1 at room temperature (25 ° C.). Is defined as less than a compound. The phosphorescence quantum yield is preferably less than 0.01. A plurality of host compounds may be used in combination. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. In addition, by using a plurality of phosphorescent compounds, it is possible to mix different light emission, thereby obtaining an arbitrary emission color. White light emission is possible by adjusting the kind of phosphorescent compound and the amount of doping, and can also be applied to illumination and backlight.

  As these host compounds, compounds having a hole transporting ability and an electron transporting ability, preventing emission light from being increased in wavelength, and having a high Tg (glass transition temperature) are preferable. Known host compounds include, for example, JP-A Nos. 2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, and 2002-334786. Gazette, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645 2002-338579, 2002-105445, 2002-343568, 2002-141173, 2002-352957, 2002-203683, 2002-363227 2002-231453, 2003-3165, 2002-234888, 2003-27048, 2002-255934, 2002-260861, 2002-280183, Examples thereof include compounds described in 2002-299060, 2002-302516, 2002-305083, 2002-305084, 2002-308837 and the like.

  In the case of having a plurality of light emitting layers, it is preferable that 50% by mass or more of the host compound in each layer is the same compound because it is easy to obtain a uniform film property over the entire organic layer. It is more preferable that the light emission energy is 2.9 eV or more because it is advantageous in efficiently suppressing energy transfer from the dopant and obtaining high luminance. Phosphorescence emission energy means the peak energy of the 0-0 band of phosphorescence emission when the photoluminescence of a deposited film of 100 nm is measured on a substrate with a host compound.

  The host compound has a phosphorescence emission energy of 2.9 eV or more and a Tg of 90 ° C. or more in consideration of deterioration of the organic EL device over time (decrease in luminance and film properties), market needs as a light source, and the like. Preferably there is. That is, in order to satisfy both luminance and durability, it is preferable that phosphorescence emission energy is 2.9 eV or more and Tg is 90 ° C. or more. Tg is more preferably 100 ° C. or higher.

  A phosphorescent compound (phosphorescent compound) is a compound in which light emission from an excited triplet is observed, is a compound that emits phosphorescence at room temperature (25 ° C.), and has a phosphorescence quantum yield of 25. The compound is 0.01 or more at ° C. When used in combination with the host compound described above, an organic EL device with higher luminous efficiency can be obtained.

  The phosphorescent compound according to the present invention preferably has a phosphorescence quantum yield of 0.1 or more. The phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 version, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence quantum yield used in the present invention only needs to achieve the phosphorescence quantum yield in any solvent.

  There are two types of light emission of the phosphorescent compound in principle. One is the recombination of the carrier on the host compound to which the carrier is transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent compound. The energy transfer type is to obtain light emission from the phosphorescent compound by moving to the other, and the other is that the phosphorescent compound becomes a carrier trap, and carrier recombination occurs on the phosphorescent compound, and the phosphorescent compound emits light. Although it is a carrier trap type in which light emission can be obtained, in any case, it is a condition that the excited state energy of the phosphorescent compound is lower than the excited state energy of the host compound.

  The phosphorescent compound can be appropriately selected from known compounds used for the light emitting layer of the organic EL device. The phosphorescent compound is preferably a complex compound containing a group 8-10 metal in the periodic table of elements, more preferably an iridium compound, an osmium compound, or a platinum compound (platinum complex compound), rare earth Of these, iridium compounds are the most preferred.

  In the present invention, the phosphorescence emission maximum wavelength of the phosphorescent compound is not particularly limited, and can be obtained in principle by selecting a central metal, a ligand, a ligand substituent, and the like. The emission wavelength can be changed.

  The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on page 108 of “New Color Science Handbook” (edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with the total CS-1000 (manufactured by Konica Minolta Sensing) is applied to the CIE chromaticity coordinates.

The white element referred to in the present invention means that when the front luminance at 2 ° viewing angle is measured by the above method, the chromaticity in the CIE1931 color system at 1000 cd / m ² is X = 0.33 ± 0.07, It is in the region of Y = 0.33 ± 0.07.

(Electron injection layer)
The electron injection layer is made of a material having a function of transporting electrons and is included in the electron transport layer in a broad sense. The electron injection layer is a layer provided between the electrode and the organic layer for lowering the driving voltage and improving the luminance of the light emission. “Organic EL element and its forefront of industrialization (NST 30, November 30, 1998) Issue) ”, Chapter 2, Chapter 2,“ Electrode Materials ”(pages 123-166). Details of the electron injection layer (cathode buffer layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. A metal buffer layer typified by lithium fluoride, an alkali metal compound buffer layer typified by lithium fluoride, an alkaline earth metal compound buffer layer typified by magnesium fluoride, an oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material.

  In addition, as an electron transport material (also serving as a hole blocking material) used for the electron transport layer adjacent to the light emitting layer side, it is sufficient if it has a function of transmitting electrons injected from the cathode to the light emitting layer. As a material, any one of conventionally known compounds can be selected and used. For example, nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodisides. Examples include methane and anthrone derivatives, oxadiazole derivatives and the like. Furthermore, in the above oxadiazole derivatives, thiadiazole derivatives in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and quinoxaline derivatives having a quinoxaline ring known as an electron-withdrawing group can also be used as the electron transport material. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.

  Also, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum. Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga or Pb can also be used as the electron transport material. In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material. Distyrylpyrazine derivatives can also be used as electron transport materials, and inorganic semiconductors such as n-type-Si and n-type-SiC are also used as electron transport materials in the same manner as the hole injection layer and hole transport layer. I can do it. Although there is no restriction | limiting in particular about the film thickness of an electron carrying layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.

  An electron transport layer having a high n property doped with impurities can also be used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like. It is preferable to use such an electron transport layer having a high n property because an element with lower power consumption can be manufactured.

  The external extraction efficiency at room temperature of light emission of the organic EL device according to the present invention is preferably 1% or more, more preferably 5% or more. Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.

  In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor may be used in combination. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.

(Electron injection layer (cathode buffer layer))
The electron injection layer (cathode buffer layer) formed in the electron injection layer forming step is made of a material having a function of transporting electrons and is included in the electron transport layer in a broad sense. The electron injection layer is a layer provided between the electrode and the organic layer for lowering the driving voltage and improving the luminance of the light emission. “Organic EL element and its forefront of industrialization (NST 30, November 30, 1998) Issue) ”, Chapter 2, Chapter 2,“ Electrode Materials ”(pages 123-166). Details of the electron injection layer (cathode buffer layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. A metal buffer layer typified by lithium fluoride, an alkali metal compound buffer layer typified by lithium fluoride, an alkaline earth metal compound buffer layer typified by magnesium fluoride, an oxide buffer layer typified by aluminum oxide, etc. .

(Second electrode (cathode))
As the second electrode (cathode), a material having a small work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O ₃ ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Suitable are a magnesium / aluminum mixture, a magnesium / indium mixture, an aluminum / aluminum oxide (Al ₂ O ₃ ) mixture, a lithium / aluminum mixture, aluminum and the like. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.

  In order to transmit the emitted light, if either one of the first electrode (anode) or the second electrode (cathode) of the organic EL element is transparent or translucent, the emission luminance is advantageously improved.

  Moreover, after producing the metal with a thickness of 1 to 20 nm on the second electrode, the conductive transparent material mentioned in the description of the first electrode is produced thereon, so that a transparent or translucent second electrode ( A cathode) can be manufactured, and by applying this, an element in which both the first electrode (anode) and the second electrode (cathode) are transmissive can be manufactured.

(Sealing member)
The base material of the sealing member is not particularly limited. For example, ethylene tetrafluoroethyl copolymer (ETFE), high density polyethylene (HDPE), expanded polypropylene (OPP), polystyrene (PS), polymethyl methacrylate (PMMA), Uses thermoplastic resin film materials, glass, metal foil, etc. used for general packaging films such as stretched nylon (ONy), polyethylene terephthalate (PET), polycarbonate (PC), polyimide, polyether styrene (PES) I can do it. As these thermoplastic resin films, a multilayer film produced by coextrusion with a different film, a multilayer film produced by bonding with different stretching angles, etc. can be used as required. Further, it is naturally possible to combine the density and molecular weight distribution of the film used to obtain the required physical properties.

  In the case of a thermoplastic resin film, it is necessary to form a barrier layer by vapor deposition or coating. Examples of the barrier layer include a metal vapor deposition film and a metal foil. As inorganic vapor deposition films, thin film handbooks p879-p901 (Japan Society for the Promotion of Science), vacuum technology handbooks p502-p509, p612, p810 (Nikkan Kogyo Shimbun), vacuum handbook revised editions p132-p134 (ULVAC Japan Vacuum Technology KK) The metal vapor deposition film as described in the above. For example, metals such as In, Sn, Pb, Au, Cu, Ag, Al, Ti, and Ni are used. Moreover, as a material of the metal foil, for example, a metal material such as aluminum, copper, or nickel, or an alloy material such as stainless steel or an aluminum alloy can be used, but aluminum is preferable in terms of workability and cost. The film thickness is about 1 to 100 μm, preferably about 10 to 50 μm. In order to facilitate handling during production, a film such as polyethylene terephthalate or nylon may be laminated in advance. When a resin film is used for the flexible sealing member, it is preferable to have a thermoplastic adhesive resin layer on the side in contact with the liquid sealing agent.

  Further, a protective layer may be provided on the barrier layer. The thickness of the protective layer is preferably 100 nm to 200 μm in consideration of stress cracking resistance, electrical insulation resistance of the barrier layer, adhesiveness (adhesive force, step following ability), etc. when used as a sealing agent layer. As the protective layer, a thermoplastic resin film having a JIS K 7210 standard melt flow rate of 5 to 20 g / 10 min is preferable, and a thermoplastic resin film of 6 to 15 g / 10 min or less is more preferably used. This is because if a resin having a melt flow rate of 5 g / 10 min or less is used, the gap caused by the step of the extraction electrode of each electrode cannot be completely filled, and if a resin having a melt flow rate of 20 g / 10 min or more is used, the tensile strength and This is because stress cracking properties, workability, and the like are reduced. The thermoplastic resin film is not particularly limited as long as it satisfies the above numerical values. For example, low-density polyethylene (LDPE), which is a polymer film described in Toray Research Center, Inc., a new development of functional packaging materials, HDPE, linear low density polyethylene (LLDPE), medium density polyethylene, unstretched polypropylene (CPP), OPP, ONy, PET, cellophane, polyvinyl alcohol (PVA), stretched vinylon (OV), ethylene-vinyl acetate copolymer ( EVOH), ethylene-propylene copolymer, ethylene-acrylic acid copolymer, ethylene-methacrylic acid copolymer, vinylidene chloride (PVDC), and the like can be used. Among these thermoplastic resin films, it is particularly preferable to use LDPE, LLDPE produced by using LDPE, LLDPE and a metallocene catalyst, or a film using a mixture of these films and HDPE films.

  The flexible sealing member used to form the sealing layer is a laminated film in which a barrier layer (a protective layer if necessary) is formed on the resin base material in order to facilitate handling during production. It is preferable to use it in the state. As a method for producing a laminated film, various generally known methods such as a wet laminating method and a dry laminating method are generally used on an inorganic layer of a thermoplastic resin film deposited with an inorganic material and a thermoplastic resin film laminated with an aluminum foil. It can be made by using a hot melt laminating method, an extrusion laminating method, or a thermal laminating method.

The water vapor permeability of the flexible sealing member used in the present invention is preferably 0.01 g / m ² · day or less in consideration of barrier properties required when commercialized as an organic EL panel. The oxygen permeability is preferably 0.1 ml / m ² · day · MPa or less. The moisture permeability is a value measured mainly by the MOCON method by a method based on the JIS K7129B method (1992), and the oxygen permeability is a value measured mainly by the MOCON method by a method based on the JIS K7126B method (1987). is there. The Young's modulus of the flexible sealing member is 1 × 10 ⁻³ GPa to 80 GPa and the thickness is 10 μm to 500 μm in consideration of adhesion to the organic EL element, prevention of spreading of the liquid adhesive, and the like. preferable.

(Inorganic film)
The material for forming the inorganic film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, In, Sn, Pb, Au, Cu, Ag, Al, Ti, metals such as _{Ni, MgO, SiO, SiO 2,} Al 2 O 3, GeO, NiO, CaO, BaO, Fe 2 O 3, Y 2 O 3, TiO 2 or the like can be used. The thickness of the inorganic film is preferably 30 nm or more and 2000 nm or less in consideration of moisture permeability, gas permeability, film stress and the like.

(adhesive)
Examples of the adhesive used when producing the organic EL panel by the laminating method include a liquid adhesive, a sheet-like adhesive, and a thermoplastic resin. Examples of the liquid adhesive include photo-curing and thermosetting sealing agents having reactive vinyl groups such as acrylic acid oligomers and methacrylic acid oligomers, moisture-curing adhesives such as 2-cyanoacrylate, epoxy-based adhesives, etc. And heat curing and chemical curing type (two-component mixing) adhesives, cationic curing type ultraviolet curing epoxy resin adhesives, and the like. It is preferable to add a filler to the liquid adhesive as necessary. The addition amount of the filler is preferably 5 to 70% by volume in consideration of adhesive strength. In addition, the size of the filler to be added is preferably 1 μm to 100 μm in consideration of the adhesive strength, the adhesive thickness after pasting and pressure bonding, and the like. The kind of filler to be added is not particularly limited, and examples thereof include soda glass, non-alkali glass, or silica, titanium dioxide, antimony oxide, titania, alumina, zirconia, tungsten oxide, and other metal oxides.

When bonding a sealing member and an organic EL element using a liquid adhesive, the bonding part 504 has bonding stability, prevention of air bubbles mixing into the bonding part, and flatness of the flexible sealing member. In view of the above, it is preferable to carry out under reduced pressure conditions of 10 to 1 × 10 ⁻⁵ Pa.

  The sheet-like adhesive refers to an adhesive that is non-flowable at room temperature (about 25 ° C.) and exhibits fluidity in the range of 50 ° C. to 100 ° C. when heated and is formed into a sheet shape. As an adhesive to be used, for example, a photocurable resin mainly composed of a compound having an ethylenic double bond at the terminal or side chain of a molecule and a photopolymerization initiator can be mentioned. In use, for example, it is preferable to use it at a normal temperature (about 25 ° C.) or less by pasting it on the sealing member side in advance.

  As the thermoplastic resin, a thermoplastic resin having a melt flow rate of JIS K 7210 specified in a range of 5 to 20 g / 10 min is preferable, and a thermoplastic resin of 6 to 15 g / 10 min or less is more preferably used. This is because if a resin with a melt flow rate of 5 (g / 10 min) or less is used, the gap formed by the steps of the extraction electrode of each electrode cannot be completely filled, and a resin of 20 (g / 10 min) or more cannot be filled. This is because if used, the tensile strength, stress cracking resistance, workability and the like are lowered. These thermoplastic resins are preferably formed into a film and bonded to a flexible sealing member (a strip-shaped flexible sealing member or a single-sheet flexible sealing member). The laminating method can be made by using various generally known methods such as a wet laminating method, a dry laminating method, a hot melt laminating method, an extrusion laminating method, and a thermal laminating method.

  The thermoplastic resin is not particularly limited as long as it satisfies the above numerical values. For example, low density polyethylene (LDPE) which is a polymer film described in the new development of functional packaging materials (Toray Research Center, Inc.). ), HDPE, linear low density polyethylene (LLDPE), medium density polyethylene, unstretched polypropylene (CPP), OPP, ONy, PET, cellophane, polyvinyl alcohol (PVA), stretched vinylon (OV), ethylene-vinyl acetate copolymer A combination (EVOH), ethylene-propylene copolymer, ethylene-acrylic acid copolymer, ethylene-methacrylic acid copolymer, vinylidene chloride (PVDC), or the like can be used. Among these thermoplastic resins, LDPE, LLDPE produced using LDPE, LLDPE and a metallocene catalyst, or a thermoplastic resin using a mixture of LDPE, LLDPE and HDPE films is preferably used.

  As a sealing member (adhesive) used when producing an organic EL panel by a bonding method, a photocuring and thermosetting adhesive having a reactive vinyl group of an acrylic acid oligomer or a methacrylic acid oligomer, 2- Moisture curable adhesives such as cyanoacrylates, epoxy and other heat and chemical curable adhesives (two-component mixing), polyamide, polyester and polyolefin hot melt adhesives, A cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned. In addition, since the organic layer which comprises an element may deteriorate with heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. Moreover, it is preferable that the above-mentioned barrier layer is formed on the back surface side of the adhesive layer of the belt-like flexible adhesive member as necessary.

(Other)
The organic EL device according to the present invention is preferably used in combination with the following method in order to efficiently extract light generated in the light emitting layer. The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1), and only about 15% to 20% of the light generated in the light emitting layer can be extracted. It is generally said that there is no. This is because the light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the element, or the transparent electrode or light emitting layer and the transparent substrate This is because the light undergoes total reflection between them, the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the side surface of the device.

  As a method for improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435). A method for improving efficiency by providing a substrate with a light condensing property (JP-A-63-314795). A method of forming a reflective surface on the side surface of an element (Japanese Patent Laid-Open No. 1-220394). A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between a substrate and a light emitter (Japanese Patent Laid-Open No. 62-172691). A method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter (Japanese Patent Laid-Open No. 2001-202827). There is a method of forming a diffraction grating between any one of the substrate, the transparent electrode layer, and the light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951).

  In the present invention, these methods can be used in combination with an organic EL element. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, a transparent electrode layer, A method of forming a diffraction grating between any layers of the light emitting layer (including between the substrate and the outside) can be suitably used. In the present invention, by combining these means, it is possible to obtain an element having higher luminance or durability.

  When a low refractive index medium is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower. . Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less. The thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate. The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method is generated from the light emitting layer by utilizing the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction. Of the light, the light that cannot go out due to total reflection between layers, etc. is diffracted by introducing a diffraction grating into any layer or medium (inside a transparent substrate or transparent electrode) , Trying to extract light out. It is desirable that the diffraction grating to be introduced has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. The light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and the light extraction efficiency is increased.

  As described above, the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated. At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium. The arrangement of the diffraction grating is preferably two-dimensionally repeated, such as a square lattice, a triangular lattice, or a honeycomb lattice.

  Furthermore, the organic EL device according to the present invention can be processed to provide, for example, a structure on a microlens array on the light extraction side of the substrate in order to efficiently extract the light generated in the light emitting layer, or so-called collection. By combining with the light sheet, the luminance in the specific direction can be increased by condensing light in a specific direction, for example, the front direction with respect to the element light emitting surface. As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.

  As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used. As the shape of the prism sheet, for example, the substrate may be formed with a triangle stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded, and the pitch is randomly changed. The shape may be other shapes. Moreover, in order to control the light emission angle from a light emitting element, you may use a light-diffusion plate and a film together with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.

  Hereinafter, although an example is given and the concrete effect of the present invention is shown, the mode of the present invention is not limited to this.

Example 1
<Production of organic EL panel>
The organic EL device in which the first electrode, the hole transport layer, the light emitting layer, the electron transport layer, and the second electrode are formed in this order on the base material by the method shown below using the manufacturing process shown in FIG. 7 is sealed. An organic EL panel sealed with a member was produced.

(Production of organic EL element)
<Preparation of strip-shaped substrate>
A polyethylene terephthalate film (a film made by Teijin DuPont, hereinafter abbreviated as PET) having a thickness of 100 μm was prepared. In addition, in order to show the position which forms a 1st electrode in advance in the strip | belt-shaped base material, the alignment mark was provided in the same position of the surface which forms a 1st electrode, and the opposite surface.

(Preparation of strip-shaped base material No. 1-a formed up to the first electrode and the hole transport layer)
Using the apparatus shown in FIG. 7, the first electrode (anode) and the hole transport layer were continuously formed on the prepared strip-shaped substrate PET according to Steps 1 to 3 in FIG. 4 by the method shown below. , Belt-like substrate No. It was taken up and stored temporarily as 1-a. The first electrode (anode) was formed by changing the step of forming the first electrode (anode) from the vapor deposition method to the sputtering method.

(Formation of the first electrode)
A mask pattern as shown in Step 2 of FIG. 4 is formed by sputtering a 120 nm thick ITO (Indium Tin Oxide) on PET under a vacuum environment condition of 5 × 10 ⁻¹ Pa, and an effective pixel area of 80 mm × A first electrode having a size having an extraction electrode of 50 mm and 40 mm × 20 mm was continuously formed at regular intervals.

(Formation of hole transport layer)
Except for the portion that becomes the take-out electrode on the first electrode formed as shown in Step 3 of FIG. 4, N, N′-diphenyl-is used as a material for forming a hole transport layer under a vacuum environment condition of 5 × 10 ⁻⁴ Pa. N, N′-m-tolyl 4,4′-diamino-1,1′-biphenyl was laminated by a vapor deposition method (vapor phase deposition method) to form a hole transport layer having a thickness of 30 nm.

(Preparation of comparative strip-shaped base material No. 1-b formed up to the first electrode and the hole transport layer)
Strip base material No. The same substrate as 1-a was used, and after forming the first electrode (anode) under the same conditions, it was temporarily wound up and stored for 1 day in an atmospheric pressure environment. After that, the strip-shaped base material No. 1 was formed on the first electrode (anode). A hole transport layer was formed under the same conditions as in 1-a. It was set as 1-b, and was once wound up and stored.

(Preparation of band-shaped base material No. 1-c formed up to the first electrode and the hole transport layer)
Using the apparatus shown in FIG. 8A, according to Steps 1 to 4 in FIG. 5, the first electrode (anode) and the hole transport layer are continuously formed on the prepared strip-shaped substrate PET by the method shown below. The formed belt-like substrate No. It was set as 1-c, and was once wound up and stored. In addition, the process for forming the first electrode (anode) was changed from the vapor deposition method to the sputtering method, and the film for forming the first electrode was formed. Further, the insulating film was formed by changing the step of forming the insulating film from the vapor deposition method to the sputtering method.

(Formation of first electrode forming film)
ITO (indium tin oxide) having a thickness of 120 nm is formed on the PET under a vacuum environment condition of 5 × 10 ⁻¹ Pa by sputtering, so that the first entire surface of the PET is not used as shown in Step 2 of FIG. A film for forming one electrode was formed.

Patterning of First Electrode Forming Film by Insulating Film As shown in Step 3 of FIG. 5, a 100 nm thick SiO ₂ film is formed on the first electrode forming film formed under a vacuum environment condition of 5 × 10 ⁻¹ Pa. By using a sputtering method, an insulating film is formed using a mask so as to have a shape having an extraction electrode formation portion under the following conditions, and the size having an extraction electrode having an effective pixel area of 80 mm × 50 mm and 40 mm × 20 mm. The patterned first electrode was continuously formed at regular intervals.

(Formation of hole transport layer)
Except for the portion that becomes the extraction electrode on the first electrode formed as shown in Step 4 of FIG. A hole transport layer was formed under the same conditions as when 1-a was produced.

(Preparation of strip-shaped substrate No. 1-d on which the first electrode and the hole transport layer for comparison were formed)
Strip base material No. The same substrate as 1-c was used, and after forming the first electrode (anode) under the same conditions, it was temporarily wound up and stored for 1 day in an atmospheric pressure environment. After that, the strip-shaped base material No. 1 was formed on the first electrode (anode). A hole transport layer was formed under the same conditions as in 1-c, and a comparative strip substrate No. It was set as 1-d and once wound up and stored.

(Preparation of band-shaped base material No. 1-e formed up to the first electrode and the hole transport layer)
Using the apparatus shown in FIG. 8 (b), the first electrode (anode) and the hole transport layer are continuously formed on the prepared strip-shaped substrate PET according to Steps 1 to 5 in FIG. 6 by the method shown below. The formed belt-like substrate No. It was set as 1-e, and was temporarily wound up and stored. The first electrode (anode) was formed by changing the step of forming the first electrode (anode) of the apparatus shown in FIG. The insulating film was formed by changing the step of forming the insulating film from a vapor deposition method to a sputtering method. The step of forming the hole transport layer was changed from the vapor deposition method to the ink jet method to form the hole transport layer.

(Formation of first electrode forming film)
A 120 nm thick ITO (Indium Tin Oxide) film is formed on the PET by sputtering, without using a mask as shown in Step 2 of FIG. A film for forming the first electrode was formed under the same conditions as those for producing 1-b to form a film for forming the first electrode.

(Formation of hole transport layer)
On the entire upper surface of the first electrode forming film formed as shown in Step 3 of FIG. A hole transport layer was formed by applying a coating solution for forming a hole transport layer so that the thickness after drying was 50 nm by an inkjet method under the same conditions as those for producing 1-b.

Patterning of First Electrode Forming Film by Insulating Film As shown in Step 4 of FIG. 6, a 100 nm-thick SiO ₂ layer is formed on the hole transport layer formed to have a shape having an extraction electrode forming part. Material No. An insulating film is formed using a mask under the same conditions as 1-b, and an insulating film is formed and patterned into a size having an extraction electrode with an effective pixel area of 80 mm × 50 mm and 40 mm × 20 mm, and the first electrode is continuously formed at a constant interval. The formed belt-like substrate No. It was set as 1-e, and was temporarily wound up and stored.
(Preparation of strip-shaped base material No. 1-f formed up to the first electrode and the hole transport layer for comparison)
Strip base material No. The same substrate as 1-e was used, and after forming the first electrode (anode) under the same conditions, it was once wound up and stored for 1 day in an atmospheric pressure environment. After that, the strip-shaped base material No. 1 was formed on the first electrode (anode). A hole transport layer and an insulating film are formed under the same conditions as in 1-e. It was taken up and stored once as 1-f.

(Preparation of organic EL elements)
Each prepared strip base material No. After performing antistatic treatment on 1-a to 1-f, an organic EL device was produced by successively laminating a light-emitting layer, an electron injection layer, and a second electrode on the hole transport layer under the following conditions. No. 1-1 to 1-6.

(Formation of light emitting layer)
The light emitting layer forming coating solution was applied by a wet coating method using an extrusion coating machine so that the thickness after drying was 100 nm. After forming the light emitting layer, antistatic treatment was performed, and the mixture was cooled to the same temperature as room temperature, and then wound around the winding core. The conveyance speed was 2 m / min.

(Preparation of light emitting layer forming coating solution)
A dopant material Ir (ppy) 3 was dissolved in 1,2-dichloroethane in a host material polyvinylcarbazole (PVK) in 1,2-dichloroethane to prepare a 10% solution, which was prepared as a light emitting layer forming coating solution. The surface tension of the coating solution for forming the light emitting layer was 32 × 10 ⁻³ N / m (manufactured by Kyowa Interface Chemical Co., Ltd .: surface tension meter CBVP-A3). The glass transition temperature of the light emitting layer was 225 degreeC. In addition, although the material which has green light emission was used for this example, it is possible to produce a white organic EL element by laminating | stacking further using blue, red, and a dopant material.

Application conditions 25 ° C. The temperature at which the light emitting layer forming coating solution was applied was 25 ° C. in an atmospheric environment. The wet coating process was performed with a dew point temperature of −20 ° C. or lower and a cleanliness class of 5 or lower (JIS B 9920).

Drying and heat treatment conditions After applying the light emitting layer forming coating solution, the solvent was removed at a discharge air velocity of 1 m / s, a wide air velocity distribution of 5%, and a temperature of 60 ° C, followed by heat treatment at a temperature of 220 ° C. A light emitting layer was formed.

(Formation of electron injection layer and second electrode)
Subsequently, on the formed light emitting layer, LiF was used as an electron injection layer forming material under a vacuum environment condition of 5 × 10 ⁻⁴ Pa, and the portion to be the take-out electrode of the first electrode was removed by vapor deposition. A LiF layer (electron injection layer) having a thickness of 0.5 nm was stacked. Subsequently, on the formed electron injection layer, aluminum was used as a second electrode forming material under a vacuum of 5 × 10 ⁻⁴ Pa, and a mask pattern was formed by vapor deposition so as to have a takeout electrode. A second electrode having a thickness of 100 nm was laminated to produce an organic EL device.

(Production of organic EL panel)
(Applying adhesive)
The prepared organic EL element No. A thickness of ultraviolet light curable liquid adhesive (epoxy resin system) is used around the light emitting region and the light emitting region except for the end portions of the lead electrodes of the 1-1 and 1-6 first electrodes and the second electrode. Coating was performed at 30 μm.

(Pasting of sealing member)
Thereafter, the organic EL element No. 1 prepared with the continuous sheet-like sealing member shown below was prepared. 1-1-1-6 are stacked by the roll laminator method on the adhesive-coated surface, and after pressure-bonding at a pressure of 0.1 MPa in an atmospheric pressure environment, a high-pressure mercury lamp with a wavelength of 365 nm is irradiated with an irradiation intensity of 5-5. An organic EL panel was prepared by irradiating and adhering at 20 mW / cm ² at a distance of 5 to 15 mm for 1 minute to make an organic EL panel. 101-106.

(Preparation of sealing member)
As the sealing member, a continuous sheet-like sealing member having a two-layer structure in which a PET film (manufactured by Teijin DuPont) was used and an inorganic film (SiN) was used as a barrier layer was prepared. The thickness of PET was 100 μm, and the thickness of the barrier layer was 200 nm. Incidentally, the barrier layer of the PET film was formed by a sputtering method. The water vapor permeability measured by the MOCON method by a method based on the JIS K-7129B method (1992) was 0.01 g / m ² · day. The oxygen permeability measured mainly by the MOCON method by a method based on JIS K7126B method (1987) was 0.1 ml / m ² · day · MPa. The prepared continuous sheet-shaped sealing member was side-slit according to the size of the prepared organic EL element to form a winding roll.

Evaluation Each sample No. Table 1 shows the results obtained by testing leakage current characteristics and the number of occurrences of dark spots (spot-shaped non-light emitting portions) by the following test methods according to the evaluation ranks shown below.

Method for measuring the number of dark spots (spot-shaped non-light emitting parts) Using a constant voltage power supply, DC 5V is applied to the organic EL panel, and the presence or absence of dark spots is visually observed using a loupe (magnification 8 times). did. Measurement was performed in the entire light emitting region, and the number of dark spots was visually measured.

Evaluation rank of dark spots (spot-like non-light emitting portions) ◎: No dark spots are generated ○: 1 or more dark spots, less than 5 △: 5 or more dark spots, less than 20 ×: 20 dark spots Test Method for Leakage Current Characteristics Using a constant voltage power source, a reverse voltage (reverse bias) of 5 V was applied for 5 seconds, and the current flowing through the organic EL element at that time was measured. Measurement was performed on the light emission region of 10 samples, and the maximum current value was defined as a leakage current.

Evaluation rank of leakage current characteristics A: Maximum current value is less than 1 × 10 ⁻⁶ A ○: Maximum current value is 1 × 10 ⁻⁶ A or more and less than 1 × 10 ⁻⁵ A Δ: Maximum current value is 1 × 10 ^{− 5} A or more, less than 1 × 10 ⁻³ A ×: Maximum current value is 1 × 10 ⁻³ A or more

  The effectiveness of the present invention was confirmed.

Example 2
<Production of organic EL panel>
An organic EL panel in which an organic EL element in which a first electrode, a hole transport layer, a light emitting layer, an electron transport layer, and a second electrode are formed in this order on a substrate is sealed with a sealing member by the method described below. did.
(Production of organic EL element)
<Preparation of sheet substrate>
A soda-lime glass having a thickness of 1.1 mm, a width of 100 mm, and a length of 120 mm was prepared as a single-wafer substrate. In addition, the surface of the soda-lime glass used was a silica-coated glass for protection from acid and alkali.

(Preparation of single-wafer base material No. 2-a on which the first electrode and the hole transport layer are formed)
Using the apparatus shown in FIG. 10 (a), according to Steps 1 to 3 in FIG. 4, the first electrode (anode) and the hole transport layer are successively formed on the prepared single-wafer soda-lime glass by the method shown below. And the single-wafer substrate No. 2-a. In addition, the process which forms the 1st electrode (anode) of the apparatus shown to Fig.10 (a) was made into the sputtering system from the vapor deposition system, and the 1st electrode (anode) was formed.

(Formation of the first electrode)
A mask pattern as shown in Step 2 of FIG. 4 is formed by sputtering ITO (indium tin oxide) having a thickness of 120 nm on soda-lime glass under a vacuum environment condition of 5 × 10 ⁻¹ Pa to obtain an effective pixel region. A first electrode having a size having an extraction electrode of 80 mm × 50 mm and 40 mm × 20 mm was formed.

(Formation of hole transport layer)
Except for the part that becomes the extraction electrode on the first electrode formed as shown in Step 3 of FIG. 4, N, N′-diphenyl is used as a hole transport layer forming material under a vacuum environment condition of 5 × 10 ⁻⁴ Pa. -N, N'-m-tolyl 4,4'-diamino-1,1'-biphenyl was laminated by vapor deposition (vapor phase deposition) to form a 30 nm thick hole transport layer.

(Preparation of comparative single-wafer substrate No. 2-b in which the first electrode for comparison and the hole transport layer were formed)
Single wafer base No. The same single-wafer substrate as 2-a was used, and the first electrode (anode) was formed under the same conditions, and then stored for 1 day in an atmospheric pressure environment. After this, on the first electrode (anode), the single-wafer substrate No. A hole transport layer was formed under the same conditions as in 2-a, and a comparative single wafer substrate No. 2-b.

(Preparation of single-wafer base material No. 2-c formed up to first electrode and hole transport layer)
Using the apparatus shown in FIG. 10 (b), according to Steps 1 to 4 in FIG. 5, the first electrode (anode) and the hole transport layer are successively formed on the prepared single-wafer soda-lime glass by the method shown below. And the single-wafer substrate No. 2-c. Note that the first electrode (anode) was formed by changing the step of forming the first electrode (anode) of the apparatus shown in FIG.

(Film formation for forming the first electrode)
A 120 nm thick ITO (indium tin oxide) film is sputtered onto soda lime glass under a vacuum environment condition of 5 × 10 ⁻¹ Pa without using a mask as shown in Step 2 of FIG. A first electrode forming film was formed on the entire upper surface to form a first electrode forming film.

(Formation of first electrode by patterning of first electrode forming film)
As shown in Step 3 of FIG. 5, SiO ₂ having a thickness of 100 nm is taken out on the formed first electrode forming film by a sputtering method under a vacuum environment condition of 5 × 10 ⁻¹ Pa, and an electrode forming portion is provided. An insulating film was formed using a mask so as to have the shape as described above, and a first electrode patterned to a size having an extraction electrode with an effective pixel area of 80 mm × 50 mm and 40 mm × 20 mm was formed.

(Formation of hole transport layer)
Except for the part that becomes the take-out electrode on the first electrode formed as shown in Step 4 of FIG. A hole transport layer was formed under the same conditions as when 2-b was produced.

(Preparation of the single-wafer base material No. 2-d formed up to the first electrode and the hole transport layer for comparison)
Single wafer base No. The same single-wafer substrate as 2-c was used, and after forming the first electrode (anode) under the same conditions, it was once stored in an atmospheric pressure environment for 1 day. After this, on the first electrode (anode), the single-wafer substrate No. A hole transport layer was formed under the same conditions as in 2-c. 2-d.

(Preparation of single-wafer base material No. 2-e formed up to first electrode and hole transport layer)
Using the apparatus shown in FIG. 10 (c), according to Steps 1 to 5 in FIG. 6, the first electrode (anode) and the hole transport layer are continuously formed on the prepared single-wafer base PET by the following method. Sheet substrate No. 2-e. The first electrode (anode) was formed by changing the step of forming the first electrode (anode) of the apparatus shown in FIG. The step of forming the hole transport layer was changed from the vapor deposition method to the ink jet method to form the hole transport layer.

(Film formation for forming the first electrode)
A 120 nm thick ITO (indium tin oxide) is sputtered onto the soda lime glass, and a single-wafer substrate No. 2 is applied to the entire surface of the soda lime glass without using a mask as shown in Step 2 of FIG. A first electrode forming film was formed under the same conditions as when 2-b was produced.

(Formation of hole transport layer)
On the entire upper surface of the first electrode forming film formed as shown in Step 3 of FIG. A hole transport layer was formed by applying a coating solution for forming a hole transport layer so that the thickness after drying was 50 nm by a wet coating method under the same conditions as those for producing 1-b.

(Formation of first electrode by patterning of first electrode forming film)
As shown in Step 4 of FIG. 6, a 100-nm-thick SiO ₂ layer is formed on the hole transport layer formed so as to have a shape having an extraction electrode forming portion. The insulating film is formed using a mask under the same conditions as in 2-b, using a mask, and the first electrode patterned to the size having the effective pixel region 80 mm × 50 mm, 40 mm × 20 mm extraction electrode is formed, and the single-wafer substrate No. . 1-e.

(Preparation of comparative single wafer base material No. 2-f formed up to the first electrode and the hole transport layer)
Single wafer base No. The same single-wafer substrate as 2-e was used, and after forming the first electrode (anode) under the same conditions, it was once stored in an atmospheric pressure environment for 1 day. After this, on the first electrode (anode), the single-wafer substrate No. A hole transport layer and an insulating film are formed under the same conditions as in 2-e. 2-f.

(Preparation of organic EL elements)
Each prepared single-wafer substrate No. After performing antistatic treatment on 2-a to 2-f, an organic EL device was produced by successively laminating a light emitting layer, an electron injection layer, and a second electrode on the hole transport layer under the following conditions. No. 2-1 to 2-6.

(Formation of light emitting layer)
Each single-wafer base material No. 1 in which up to the hole transport layer was formed. 2-a to 2-f are used, and in the region where the hole transport layer is formed, Alq ₃ is used as a light emitting layer forming material, and a light emitting layer forming gas phase is formed under a vacuum of 5 × 10 ⁻⁴ Pa. Vapor deposition was performed using a deposition apparatus.

(Formation of electron injection layer and second electrode)
On the formed light-emitting layer, LiF is used as an electron injection layer forming material under a vacuum environment condition of 5 × 10 ⁻⁴ Pa, and the thickness of the first electrode is removed by vapor deposition, except for the portion that becomes the extraction electrode. A 0.5 nm LiF layer (electron injection layer) was stacked. Subsequently, on the formed electron injection layer, aluminum was used as a second electrode forming material under a vacuum of 5 × 10 ⁻⁴ Pa, and a mask pattern was formed by vapor deposition so as to have a takeout electrode. A second electrode having a thickness of 100 nm was laminated to produce an organic EL device.

(Production of organic EL panel)
The organic EL panel shown in FIG.

(Applying adhesive)
The prepared organic EL element No. A thermosetting liquid adhesive (epoxy resin system) is used around the light emitting region and the light emitting region except for the end portions of the lead electrodes of the 2-1 to 2-6 first electrode and the second electrode. Coating was performed at 30 μm.

(Pasting of sealing member)
Thereafter, the sealing member shown below was prepared as the prepared organic EL element No. After stacking on the adhesive coated surface of 2-1 to 2-6 and crimping with a pressing force of 0.1 MPa in a vacuum environment of 1 Pa, it was left to stand for 3 hours in an environment of atmospheric pressure 80 ° C. The organic EL panel was prepared and the sample No. 201-206.

(Preparation of sealing member)
As a sealing member, a sheet-shaped sealing member having a two-layer structure using a PET film (manufactured by Teijin / DuPont) as a base material and an aluminum foil of a conductive material as a barrier layer was prepared. The thickness of PET was 100 μm, and the thickness of the barrier layer was 7 μm. The base material and the barrier layer were joined by a dry laminating method using a polyester adhesive, and the thickness of the sealing member after joining was 110 μm. The water vapor permeability measured by the MOCON method by a method based on the JIS K-7129B method (1992) was 0.01 g / m ² · day. The oxygen permeability measured mainly by the MOCON method by a method based on JIS K7126B method (1987) was 0.1 ml / m ² · day · MPa. The prepared sheet-shaped sealing member was cut according to the size of the prepared organic EL element.

Evaluation Each sample No. Table 2 shows the results of measuring leak current characteristics and the number of dark spots (spot-shaped non-light emitting portions) generated in 201 to 206 by the same method as in Example 1, and evaluating according to the same evaluation rank as in Example 1. .

  The effectiveness of the present invention was confirmed.

Example 3
Using the manufacturing process shown in FIG. 9, the following method is used: first substrate / anode (first electrode) / hole transport layer / light emitting layer / cathode buffer layer (electron injection layer) / cathode (second electrode) / An organic EL panel having a layer structure of the second substrate was produced.

Production of first member <Preparation of strip-shaped first substrate>
A polyethersulfone film (manufactured by Sumitomo Bakelite, hereinafter abbreviated as PES) having a thickness of 200 μm was prepared as the first belt-like substrate. In addition, in order to show the position which forms an anode (1st electrode) previously in the strip | belt-shaped 1st base material, the alignment mark was provided in the same position of the surface which forms an anode (1st electrode), and the opposite surface.

(Preparation of 1st member No. 3-a which formed even the 1st electrode, the positive hole transport layer, and the light emitting layer on the strip | belt-shaped 1st base material)
In the same manner as in Example 1, a first electrode (anode) and a hole transport layer were continuously formed on the prepared PES, and were wound up and stored once. Thereafter, a light emitting layer is formed on the formed hole transport layer, and the first member No. It was set as 3-a, and was temporarily wound up and stored.

(Formation of the first electrode)
A mask pattern as shown in Step 2 of FIG. 4 is formed by sputtering a 120 nm-thick ITO (indium tin oxide) film on a vacuum environmental condition PES of 5 × 10 ⁻¹ Pa to obtain an effective pixel area of 80 mm × 50 mm. The first electrode having a size having a take-out electrode of 40 mm × 20 mm was continuously formed at regular intervals.

(Formation of hole transport layer)
On the first electrode formed as shown in Step 3 of FIG. A hole transport layer was formed under the same conditions as 1-a.

(Formation of light emitting layer)
After the light emitting layer was formed on the hole transport layer under the same conditions as in Example 1, antistatic treatment was performed, and after cooling to the same temperature as room temperature, the wound core was stored as a winding roll.

(Preparation of comparative first member No. 3-b in which the first electrode, the hole transport layer, and the light emitting layer are formed on the belt-like first base material)
First member No. The same substrate as 3-a was used, and the first electrode (anode) was formed under the same conditions, and then wound up and stored for one day in an atmospheric pressure environment. Thereafter, the first member No. 1 is formed on the first electrode (anode). The hole transport layer and the light emitting layer are formed under the same conditions as in 3-a. It was set as 3-b and once wound up and stored.

(Preparation of 1st member No. 3-c which formed even the 1st electrode, the positive hole transport layer, and the light emitting layer on the strip | belt-shaped 1st base material)
In the same manner as in Example 1, a first electrode (anode) and a hole transport layer were continuously formed on the prepared PES, and were wound up and stored once. Thereafter, a light emitting layer is formed on the formed hole transport layer, and the first member No. It was set as 3-c and once wound up and stored.

(Film formation for forming the first electrode)
On the PES, the belt-like substrate No. A first electrode forming film was formed on the entire upper surface of the PES under the same conditions as in 1-c.

(Patterning of first electrode forming film by insulating film)
The belt-like substrate No. 1 of Example 1 was used. An insulating film was formed under the same conditions as 1-c, and patterned to a size having an extraction pixel with an effective pixel area of 80 mm × 50 mm and 40 mm × 20 mm, and the first electrodes were continuously formed at regular intervals.

(Formation of hole transport layer)
On the first electrode formed as shown in Step 3 of FIG. A hole transport layer was formed under the same conditions as 1-a.

(Formation of light emitting layer)
After the light emitting layer was formed on the hole transport layer under the same conditions as in Example 1, antistatic treatment was performed, and after cooling to the same temperature as room temperature, the wound core was stored as a winding roll.

(Preparation of comparative first member No. 3-d in which the first electrode, the hole transport layer and the light emitting layer are formed on the belt-like first base material)
First member No. The same substrate as 3-c was used, and after forming the first electrode (anode) under the same conditions, it was temporarily wound up and stored for 1 day in an atmospheric pressure environment. Thereafter, the first member No. 1 is formed on the first electrode (anode). The hole transport layer and the light emitting layer are formed under the same conditions as in 3-c. It was set as 3-d, and it wound up and stored once.

(Preparation of 1st member No. 3-e which formed even the 1st electrode, the positive hole transport layer, and the light emitting layer on the strip | belt-shaped 1st base material)
Using the apparatus shown in FIG. 9, according to Steps 1 to 5 in FIG. 6, the first electrode (anode) and the hole transport layer were continuously formed on the prepared PES in the same manner as in Example 1 by the method shown below. And then wound up and stored. Thereafter, an insulating film is formed on the hole transport layer using a mask in order to continuously form first electrodes having extraction electrodes having effective pixel regions of 80 mm × 50 mm and 40 mm × 20 mm at regular intervals. A light emitting layer is formed on the effective pixel area 80 mm × 50 mm except for the extraction electrode portion, and the first member No. It was set as 3-e and once wound up and stored.

(Film formation for forming the first electrode)
On the PES, the belt-like substrate No. A first electrode forming film was formed on the entire upper surface of the PES under the same conditions as in 1-d.

(Formation of hole transport layer)
On the first electrode forming film formed as shown in Step 3 of FIG. A hole transport layer was formed under the same conditions as 1-d.

(Patterning of first electrode forming film by insulating film)
As shown in Step 5 of FIG. 6, the belt-like substrate No. 1 of Example 1 was formed on the hole transport layer formed so as to have a shape having an extraction electrode forming portion. An insulating film is formed by a vapor deposition method under the same conditions as 1-b, and patterned to a size having an extraction electrode with an effective pixel area of 80 mm × 50 mm and 40 mm × 20 mm, and the first electrode is continuously formed at regular intervals. And then wound up and stored.

(Formation of light emitting layer)
After taking out the electrode part under the same conditions as in Example 1 and forming a light emitting layer on the effective pixel area, antistatic treatment was performed and cooled to the same temperature as room temperature, and then the winding core was wound into a winding roll shape. And stored.

(Preparation of comparative first member No. 3-f in which the first electrode, the hole transport layer and the light emitting layer are formed on the belt-like first base material)
First member No. The same substrate as 3-e was used, and after forming the first electrode (anode) under the same conditions, it was temporarily wound up and stored for 1 day in an atmospheric pressure environment. Thereafter, the first member No. 1 is formed on the first electrode (anode). A hole transport layer, an insulating film, and a light emitting layer are formed under the same conditions as in 3-e. It was taken up and stored temporarily as 3-f.

(Production of second member)
A second member having a second electrode (cathode) layer and a cathode buffer layer (electron injection layer) in this order on the belt-like second substrate was prepared by the following method.

<Preparation of strip-shaped second base material>
The same thing as a 1st strip | belt-shaped base material was prepared as a strip | belt-shaped 2nd base material. The alignment mark indicating the position of the second electrode (cathode) is aligned with the position of the alignment mark provided for the anode (first electrode) in advance at a constant interval in accordance with the peripheral shape of the second electrode (cathode). ) Was provided with alignment marks.

(Formation of second electrode (cathode))
On the prepared belt-like second base material, aluminum was vapor-deposited in a vacuum environment of 5 × 10 ⁻¹ Pa using a mask in accordance with the size and position of the first electrode (anode). A cathode (second electrode) having an extraction electrode with a size of 100 nm, an effective pixel area of 80 mm × 50 mm, and 40 mm × 20 mm was formed.

(Formation of cathode buffer layer (electron injection layer))
Subsequently, on the second electrode (cathode) formed on the second substrate, the take-out electrode is removed under a vacuum of 5 × 10 ⁻⁴ Pa, and a LiF layer (electron injection layer) having a thickness of 0.5 nm is formed. The entire surface was evaporated to form a cathode buffer layer (electron injection layer).

<Production of organic EL panel>
(Coating agent coating)
Each prepared first member No. The prepared adhesive is applied around the 1-a to 1-f first electrode (anode) / hole transport layer / light-emitting layer laminate except for the portion serving as the take-out electrode of the first electrode (anode). did. An adhesive (manufactured by Nagase ChemteX Corp., UV resin XNR5570-B1) was used as a sealant.

<Bonding>
Each 1st member No. which coated the prepared sealing agent. 1-a to 1-f and the prepared second member are bonded to the first base material with a cathode buffer layer (electron injection layer) and a light emitting layer by a thermocompression-bonding roll under a reduced pressure environment by a bonding apparatus shown in FIG. It bonded so that it might become the structure pinched | interposed so that an anode (1st electrode) and a cathode (2nd electrode) may oppose between 2nd base materials. At this stage, individual organic EL elements having a configuration in which the anode (first electrode) and the cathode (second electrode) are sandwiched between the first substrate and the second substrate are continuously connected. It is in the state. Thereafter, in order to obtain a single organic EL element, it is transported to a punching process, and individual organic EL elements are punched out. 301 to 306.

  The alignment of the cathode buffer layer (electron injection layer) and the light emitting layer is performed by detecting the alignment marks attached to both of them and adjusting the transport speed of the first member and the first member. It was. The degree of pressure reduction during bonding was 0.1 Pa, the temperature during bonding was 200 ° C., and the pressure was 5 MPa.

Evaluation Each sample No. Table 3 shows the results obtained by measuring leakage current characteristics and the number of dark spots (spot-shaped non-light emitting portions) generated in 301 to 306 by the same method as in Example 1 and evaluating according to the same evaluation rank as in Example 1. .

  The effectiveness of the present invention was confirmed.

Claims (7)

In the method of manufacturing an organic electroluminescence panel in which an organic electroluminescence element having a first electrode, a plurality of organic compound layers including a light emitting layer, and a second electrode on a substrate is sealed with a sealing member.
The step of forming the first electrode and the step of forming at least one layer of the organic compound layer are in a vacuum environment condition,
The method for producing an organic electroluminescence panel, wherein the step of forming the first electrode and the step of forming at least one layer of the organic compound layer are continuously performed. The method of manufacturing an organic electroluminescence panel according to claim 1, wherein the first electrode forming step is mask pattern film formation. The first electrode forming step includes a film forming step of a first electrode forming film and a patterning step of the first electrode forming film, and the film forming step and the patterning step are performed under vacuum environment conditions. Yes,
The method for producing an organic electroluminescence panel according to claim 1, wherein the method is carried out continuously. The first electrode forming step includes a step of forming a first electrode forming film. The first electrode forming film is formed in the film forming step, and the first electrode formed is continuously formed. After forming the organic compound layer on the electrode forming film,
The method for producing an organic electroluminescence panel according to claim 1, wherein the first electrode forming film is patterned in a patterning step. 5. The method according to claim 1, wherein in the patterning step, an insulating layer is formed, and the first electrode is patterned by patterning the insulating layer. The manufacturing method of the organic electroluminescent panel of description. 5. The method of manufacturing an organic electroluminescence panel according to claim 4, wherein the patterning step patterns the first electrode by patterning an insulating layer on at least one layer of the organic compound. An organic electroluminescence panel manufactured by the method for manufacturing an organic electroluminescence panel according to any one of claims 1 to 6.