JPWO2007108414A1 - Exposure apparatus and device manufacturing method - Google Patents

Abstract

The exposure apparatus includes one optical element (FL) through which at least two or more of the three or more exposure lights are guided, and an optical system that can irradiate each exposure area corresponding to each exposure light with three or more exposure lights ( PL), and multiple exposure is performed on a predetermined region (S) on the substrate (P) with images of a plurality of patterns formed based on three or more exposure lights irradiated on each of the three or more exposure regions.

Description

The present invention relates to an exposure apparatus that exposes a substrate and a device manufacturing method.
This application claims priority based on Japanese Patent Application No. 2006-074243 for which it applied on March 17, 2006, and uses the content here.

As an exposure apparatus used in a photolithography process, for example, an exposure apparatus that performs multiple exposure of a substrate as disclosed in the following patent document is known.
JP 10-214783 A

  In multiple exposure, there are cases where a plurality of masks are prepared and exposure is performed for each mask, or a plurality of illumination conditions are prepared and exposure is performed for each illumination condition. In this case, since the time for exchanging the mask and the time for changing the illumination conditions are required, the operating rate of the exposure apparatus may be reduced, and the throughput may be reduced.

  An object of the present invention is to provide an exposure apparatus and a device manufacturing method capable of efficiently performing multiple exposure of a substrate while suppressing a decrease in throughput.

  The present invention adopts the following configuration corresponding to each figure shown in the embodiment. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

  According to the first aspect of the present invention, the exposure apparatus for exposing a substrate includes one optical element (FL) to which at least two or more of three or more exposure lights (EL1 to EL4) are guided, and three or more exposures. An optical system (PL) that irradiates three or more exposure regions (AR1 to AR4) with light (EL1 to EL4), and three or more exposure lights (AR1 to AR4) irradiated to each of the three or more exposure regions (AR1 to AR4) There is provided an exposure apparatus (EX) that performs multiple exposure of a predetermined area (S) on a substrate (P) with images of a plurality of patterns (PA1 to PA4) formed based on EL1 to EL4).

  According to the first aspect of the present invention, the multiple exposure of the substrate can be performed efficiently.

  According to the second aspect of the present invention, a device manufacturing method using the exposure apparatus (EX) of the above aspect is provided.

  According to the second aspect of the present invention, a device can be manufactured using an exposure apparatus that can efficiently perform multiple exposure of a substrate.

  According to the present invention, it is possible to suppress a decrease in throughput, to efficiently perform multiple exposure of a substrate, and to improve device productivity.

It is a schematic block diagram which shows the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of each mask hold | maintained at each mask stage which concerns on 1st Embodiment. It is a figure which shows an example of each mask hold | maintained at each mask stage which concerns on 1st Embodiment. It is a figure which shows an example of each mask hold | maintained at each mask stage which concerns on 1st Embodiment. It is a figure which shows an example of each mask hold | maintained at each mask stage which concerns on 1st Embodiment. It is a schematic diagram which shows the relationship between the shot area | region on the board | substrate which concerns on 1st Embodiment, and each exposure area | region. It is a schematic diagram which shows the exposure apparatus which concerns on 2nd Embodiment. It is a schematic diagram which shows the exposure apparatus which concerns on 3rd Embodiment. It is a schematic diagram which shows the exposure apparatus which concerns on 4th Embodiment. It is a schematic diagram which shows the relationship between the shot area | region on the board | substrate which concerns on 4th Embodiment, and each exposure area | region. It is a schematic diagram which shows the exposure apparatus which concerns on 5th Embodiment. It is a flowchart figure which shows an example of the manufacturing process of a microdevice.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... 1st mask stage, 2 ... 2nd mask stage, 3 ... 3rd mask stage, 4 ... 4th mask stage, 5 ... Substrate stage, 6 ... Measurement system, 7 ... Control apparatus, 21 ... 1st synthetic | combination optical element , 22 ... second synthetic optical element, 23 ... third synthetic optical element, 31 ... first optical system, 32 ... second optical system, 33 ... third optical system, 34 ... fourth optical system, 35 ... fifth optical system System 41... First reflection surface 42. Second reflection surface AR1... First exposure region AR2. Second exposure region AR3. Third exposure region AR4. Fourth exposure region BR1. BR2 ... second optical path, EL1 ... first exposure light, EL2 ... second exposure light, EL3 ... third exposure light, EL4 ... fourth exposure light, EX ... exposure device, FL ... optical element, IL1 ... first illumination system , IL2 ... second illumination system, IL3 ... third illumination system, IL4 ... fourth illumination system, M1 ... 1 mask, M2 ... 2nd mask, M3 ... 3rd mask, M4 ... 4th mask, P ... substrate, PA1 ... 1st pattern, PA2 ... 2nd pattern, PA3 ... 3rd pattern, PA4 ... 4th pattern, PL ... projection optical system, S ... shot area

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The predetermined direction in the horizontal plane is the X-axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and the direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, the vertical direction) is the Z-axis direction. To do. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment will be described. FIG. 1 is a schematic block diagram that shows an exposure apparatus EX according to the first embodiment. The exposure apparatus EX of the present embodiment includes a projection optical system PL that includes one optical element FL through which at least two or more of three or more exposure lights are guided, and that can irradiate three or more exposure areas with each corresponding exposure light. I have. The exposure apparatus EX of the present embodiment performs multiple exposure of the shot area S on the substrate P with images of a plurality of patterns formed (projected) on three or more exposure areas irradiated with the corresponding exposure light.

  In the present embodiment, four exposure lights of first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 are guided to the optical element FL. In the present embodiment, the optical element FL is disposed at a position facing the surface of the substrate P. In the present embodiment, the optical element FL is an optical element closest to the image plane of the projection optical system PL among the plurality of optical elements of the projection optical system PL. In the following description, the optical element FL that faces the surface of the substrate P of the projection optical system PL will be appropriately referred to as a terminal optical element FL.

  The projection optical system PL of the present embodiment has a first exposure area AR1, a second exposure area AR2, a third exposure area AR3, and a first exposure area AR1, on the light exit side of the projection optical system PL, that is, on the image plane side of the projection optical system PL. The four exposure areas AR4 are set in a predetermined positional relationship. Each of the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4 corresponds to each of the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4. Set to The projection optical system PL includes first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 corresponding to the exposure lights EL1, EL2, EL3, and EL4. Irradiation is performed on each of the fourth exposure areas AR1, AR2, AR3, and AR4.

  The exposure apparatus EX of the present embodiment can form an image of the first pattern PA1 in the first exposure area AR1 based on the first exposure light EL1 irradiated to the first exposure area AR1 by the projection optical system PL. Yes, an image of the second pattern PA2 can be formed in the second exposure area AR2 based on the second exposure light EL2 irradiated to the second exposure area AR2, and the third exposure area AR3 is irradiated with the third exposure area AR3. An image of the third pattern PA3 can be formed in the third exposure area AR3 based on the exposure light EL3, and the fourth exposure area AR4 based on the fourth exposure light EL4 irradiated to the fourth exposure area AR4. In addition, an image of the fourth pattern PA4 can be formed. The exposure apparatus EX includes first, second, third, and fourth exposure lights EL1, EL2, EL3, which are irradiated to the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4, respectively. The shot area S on the substrate P is subjected to multiple exposure with images of the first, second, third, and fourth patterns PA1, PA2, PA3, PA4 formed based on EL4.

  In FIG. 1, the exposure apparatus EX is movable while holding a first mask stage 1 that can move while holding a first mask M1 having a first pattern PA1, and a second mask M2 that has a second pattern PA2. A second mask stage 2, a third mask stage 3 that can move while holding a third mask M3 having a third pattern PA3, and a fourth mask that can move while holding a fourth mask M4 having a fourth pattern PA4. A mask stage 4, a substrate stage 5 that can move while holding the substrate P, and a measurement system 6 that can measure position information of each stage are provided. The exposure apparatus EX includes a first illumination system IL1 that illuminates the first pattern PA1 of the first mask M1 with the first exposure light EL1, and a second illumination that illuminates the second pattern PA2 of the second mask M2 with the second exposure light EL2. The illumination system IL2, the third illumination system IL3 that illuminates the third pattern PA3 of the third mask M3 with the third exposure light EL3, and the fourth illumination that illuminates the fourth pattern PA4 of the fourth mask M4 with the fourth exposure light EL4. It further includes an illumination system IL4, a projection optical system PL, and a control device 7 that controls the overall operation of the exposure apparatus EX. The projection optical system PL includes an image of the first pattern PA1 illuminated with the first exposure light EL1, an image of the second pattern PA2 illuminated with the second exposure light EL2, and a third pattern illuminated with the third exposure light EL3. The image of PA3 and the image of the fourth pattern PA4 illuminated with the fourth exposure light EL4 are respectively represented by the first exposure area AR1, the second exposure area AR2, the third exposure area AR3, and the fourth exposure area AR4. To form.

  The substrate here includes, for example, a substrate in which a photosensitive material (photoresist) is coated on a base material such as a semiconductor wafer such as a silicon wafer, and various types such as a protective film (top coat film) separately from the photosensitive film. The thing which apply | coated this film | membrane is also included. The mask includes a reticle on which a device pattern to be reduced and projected on a substrate is formed. For example, a predetermined pattern is formed on a transparent plate member such as a glass plate using a light shielding film such as chromium. This transmission type mask is not limited to a binary mask in which a pattern is formed by a light shielding film, and includes, for example, a phase shift mask such as a halftone type or a spatial frequency modulation type. In this embodiment, a transmissive mask is used as a mask, but a reflective mask may be used. In the present embodiment, the first, second, third, and fourth patterns PA1, PA2, PA3, and PA4 are different patterns. Further, the masks M1 to M4 may be of the same type or different types. For example, part of the masks M1 to M4 may be a binary mask and the other may be a phase shift reticle.

  The exposure apparatus EX of the present embodiment is configured to move the first, second, third, and fourth masks M1, M2, M3, and M4 and the substrate P in synchronization with each other in a predetermined scanning direction while performing the first, second, and second masks. 3. Scanning exposure apparatus (so-called scanning stepper) that projects images of the first, second, third, and fourth patterns PA1, PA2, PA3, and PA4 of the fourth masks M1, M2, M3, and M4 onto the substrate P It is. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the Y-axis direction. The exposure apparatus EX moves the shot area S of the substrate P in the Y-axis direction with respect to the first, second, third, and fourth exposure areas AR1, AR2, AR3, AR4 via the projection optical system PL. The first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4 are respectively irradiated with the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4. Thereby, based on the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 irradiated to the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4. The shot region S on the substrate P is subjected to multiple exposure with the images of the first, second, third, and fourth patterns PA1, PA2, PA3, and PA4 to be formed. In addition, the exposure apparatus EX of the present embodiment uses the first mask stage 1 to move the first mask M1 in the Z-axis direction with respect to the first exposure light EL1 in synchronization with the movement of the substrate P in the Y-axis direction. The second mask stage 2 is used to move the second mask M2 in the Y-axis direction with respect to the second exposure light EL2, and the third mask stage 3 is used to move the third mask M3 to the third exposure light EL3. On the other hand, the fourth mask stage 4 is used to move the fourth mask M4 in the Z-axis direction with respect to the fourth exposure light EL4. That is, in this embodiment, the scanning direction (synchronous movement direction) of the first and fourth masks M1 and M4 is the Z-axis direction, and the scanning direction (synchronous movement direction) of the second and third masks M2 and M3 is Y. Axial direction.

Next, the first, second, third, and fourth illumination systems IL1, IL2, IL3, and IL4 will be described. The first illumination system IL1 illuminates the first illumination area IA1 on the first mask M1 held by the first mask stage 1 with the first exposure light EL1 having a uniform illuminance distribution. The second illumination system IL2 illuminates the second illumination area IA2 on the second mask M2 held by the second mask stage 2 with the second exposure light EL2 having a uniform illuminance distribution. The third illumination system IL3 illuminates the third illumination area IA3 on the third mask M3 held by the third mask stage 3 with the third exposure light EL3 having a uniform illuminance distribution. The fourth illumination system IL4 illuminates the fourth illumination area IA4 on the fourth mask M4 held by the fourth mask stage 4 with the fourth exposure light EL4 having a uniform illuminance distribution. Examples of the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 emitted from the first, second, third, and fourth illumination systems IL1, IL2, IL3, and IL4, respectively. Far ultraviolet light (DUV light) such as emission lines (g line, h line, i line) and KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193 nm) and F ₂ laser light emitted from a mercury lamp Vacuum ultraviolet light (VUV light) such as (wavelength 157 nm) is used. In the present embodiment, ArF excimer laser light is used as the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4.

  The exposure apparatus EX of the present embodiment includes a first light source device corresponding to the first illumination system IL1, a second light source device corresponding to the second illumination system IL2, and a third light source device corresponding to the third illumination system IL3. And a fourth light source device corresponding to the fourth illumination system IL4. That is, the exposure apparatus EX of the present embodiment has a plurality of light source devices (laser light emission devices). In addition, each of the first, second, third, and fourth illumination systems IL1, IL2, IL3, and IL4 has first, second, third, and fourth exposure lights EL1 in a random polarization state (non-polarization state), Each of the first, second, third, and fourth patterns PA1, PA2, PA3, and PA4 is illuminated by EL2, EL3, and EL4. Note that the exposure light emitted from one light source device is branched into first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 by a branch optical element, and the first, second, and third light beams are branched. The first, second, third, and fourth patterns PA1, PA2, PA3, and PA4 may be illuminated with the fourth exposure lights EL1, EL2, EL3, and EL4.

  Next, the first, second, third, and fourth mask stages 1, 2, 3, and 4 will be described. The first mask stage 1 is movable in the Z-axis, X-axis, and θY directions while holding the first mask M1 by driving a first mask stage driving device 1D including an actuator such as a linear motor. The first mask stage 1 holds the first mask M1 so that the first pattern formation surface on which the first pattern PA1 of the first mask M1 is formed and the XZ plane are substantially parallel. The position information of the first mask stage 1 (and hence the first mask M1) is measured by the laser interferometer 61 of the measurement system 6. The laser interferometer 61 measures the position information of the first mask stage 1 using the reflecting surface 61K of the moving mirror provided on the first mask stage 1. The control device 7 drives the first mask stage drive device 1D based on the measurement result of the laser interferometer 61, and controls the position of the first mask M1 held on the first mask stage 1.

  The second mask stage 2 is movable in the X-axis, Y-axis, and θZ directions while holding the second mask M2 by driving a second mask stage driving device 2D including an actuator such as a linear motor. The second mask stage 2 holds the second mask M2 so that the second pattern formation surface on which the second pattern PA2 of the second mask M2 is formed and the XY plane are substantially parallel. Position information of the second mask stage 2 (and thus the second mask M2) is measured by the laser interferometer 62 of the measurement system 6. The laser interferometer 62 measures the position information of the second mask stage 2 using the reflecting surface 62K of the movable mirror provided on the second mask stage 2. The control device 7 drives the second mask stage driving device 2D based on the measurement result of the laser interferometer 62, and controls the position of the second mask M2 held on the second mask stage 2.

  The third mask stage 3 is movable in the X-axis, Y-axis, and θZ directions while holding the third mask M3 by driving a third mask stage driving device 3D including an actuator such as a linear motor. The third mask stage 3 holds the third mask M3 so that the third pattern formation surface on which the third pattern PA3 of the third mask M3 is formed and the XY plane are substantially parallel. Position information of the third mask stage 3 (and thus the third mask M3) is measured by the laser interferometer 63 of the measurement system 6. The laser interferometer 63 measures the position information of the third mask stage 3 using the reflecting surface 63K of the moving mirror provided on the third mask stage 3. The control device 7 drives the third mask stage driving device 3D based on the measurement result of the laser interferometer 63, and controls the position of the third mask M3 held on the third mask stage 3.

  The fourth mask stage 4 is movable in the Z-axis, X-axis, and θY directions while holding the fourth mask M4 by driving a fourth mask stage driving device 4D including an actuator such as a linear motor. The fourth mask stage 4 holds the fourth mask M4 so that the fourth pattern formation surface on which the fourth pattern PA4 of the fourth mask M4 is formed and the XZ plane are substantially parallel. Position information of the fourth mask stage 4 (and thus the fourth mask M4) is measured by the laser interferometer 64 of the measurement system 6. The laser interferometer 64 measures the position information of the fourth mask stage 4 using the reflecting surface 64K of the movable mirror provided on the fourth mask stage 4. The control device 7 drives the fourth mask stage driving device 4D based on the measurement result of the laser interferometer 64, and controls the position of the fourth mask M4 held on the fourth mask stage 4.

  FIG. 2A is a plan view showing the first mask M1 held on the first mask stage 1. FIG. FIG. 2B is a plan view showing the second mask M <b> 2 held on the second mask stage 2. FIG. 2C is a plan view showing the third mask M3 held on the third mask stage 3. FIG. FIG. 2D is a plan view showing the fourth mask M4 held on the fourth mask stage 4. FIG. The first illumination area IA1 with the first exposure light EL1 on the first mask M1 is set in a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction. The second illumination area IA2 by the second exposure light EL2 on the second mask M2 is also set to a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction. The third illumination area IA3 by the third exposure light EL3 on the third mask M3 is also set to a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction. The fourth illumination area IA4 with the fourth exposure light EL4 on the fourth mask M4 is also set to a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction.

  The first mask stage 1 can move the first mask M1 having the first pattern PA1 in the Z-axis direction with respect to the first exposure light EL1. The second mask stage 2 can move the second mask M2 having the second pattern PA2 in the Y-axis direction with respect to the second exposure light EL2. The third mask stage 3 can move the third mask M3 having the third pattern PA3 in the Y-axis direction with respect to the third exposure light EL3. The fourth mask stage 4 can move the fourth mask M4 having the fourth pattern PA4 in the Z-axis direction with respect to the fourth exposure light EL4.

  When the controller 7 exposes the substrate P, at least the first pattern formation area SA1 in which the first pattern PA1 is formed out of the first mask M1 passes through the first illumination area IA1 by the first exposure light EL1. As described above, the first mask stage 1 is controlled to move the first mask M1 in the Z-axis direction. Further, when the control device 7 exposes the substrate P, the second pattern formation area SA2 in which at least the second pattern PA2 is formed in the second mask M2 sets the second illumination area IA2 by the second exposure light EL2. The second mask stage 2 is controlled so as to pass, and the second mask M2 is moved in the Y-axis direction. Further, when the control device 7 exposes the substrate P, the third pattern formation area SA3 in which at least the third pattern PA3 is formed out of the third mask M3 sets the third illumination area IA3 by the third exposure light EL3. The third mask stage 3 is controlled so as to pass, and the third mask M3 is moved in the Y-axis direction. Further, when the control device 7 exposes the substrate P, the fourth pattern formation area SA4 in which at least the fourth pattern PA4 is formed in the fourth mask M4 sets the fourth illumination area IA4 by the fourth exposure light EL4. The fourth mask stage 4 is controlled so as to pass, and the fourth mask M4 is moved in the Z-axis direction.

  Next, the projection optical system PL will be described with reference to FIG. The projection optical system PL includes an image of the first pattern PA1 of the first mask M1 illuminated with the first exposure light EL1, an image of the second pattern PA2 of the second mask M2 illuminated with the second exposure light EL2, a third An image of the third pattern PA3 of the third mask M3 illuminated with the exposure light EL3 and an image of the fourth pattern PA4 of the fourth mask M4 illuminated with the fourth exposure light EL4 are formed on the substrate P with a predetermined projection magnification. To project. The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, 1/8 or the like.

  The projection optical system PL of the present embodiment includes a first synthesis optical element 21 and a second synthesis optical element 22. The first combining optical element 21 combines the first exposure light EL1 from the first pattern PA1 and the second exposure light EL2 from the second pattern PA2. The second combining optical element 22 combines the third exposure light EL3 from the third pattern PA3 and the fourth exposure light EL4 from the fourth pattern PA4.

  In addition, the projection optical system PL of the present embodiment includes a first optical system 31 that guides the first exposure light EL1 to the first combining optical element 21, and a second optical that guides the second exposure light EL2 to the first combining optical element 21. A system 32, a third optical system 33 that guides the third exposure light EL3 to the second composite optical element 22, a fourth optical system 34 that guides the fourth exposure light EL4 to the second composite optical element 22, and a terminal optical element FL. And a fifth optical system 35 including The first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 are respectively exposed from different first, second, third, and fourth patterns PA1, PA2, PA3, and PA4. Including light. The first optical system 31 is emitted from the first illumination system IL1 and guides the first exposure light EL1 through the first pattern PA1 to the first combining optical element 21, and the second optical system 32 is provided with the second illumination system IL2. The second exposure light EL2 emitted from the first pattern PA2 is guided to the first combining optical element 21 via the second pattern PA2. The third optical system 33 guides the third exposure light EL3 emitted from the third illumination system IL3 and passed through the third pattern PA3 to the second combining optical element 22. The fourth optical system 34 is emitted from the fourth illumination system IL4, and guides the fourth exposure light EL4 through the fourth pattern PA4 to the second combining optical element 22.

  The first combining optical element 21 of the present embodiment includes a branching optical element (half mirror) that branches the optical paths of the incident first and second exposure light beams EL1 and EL2. The projection optical system PL includes a part of the first exposure light EL1 from the first pattern PA1 branched by the first synthesis optical element 21 and the second exposure light EL2 from the second pattern PA2 branched by the first synthesis optical element 21. Synthesize a part of Similarly, the second combining optical element 22 of the present embodiment includes a branching optical element (half mirror) that branches the optical paths of the incident third and fourth exposure lights EL3 and EL4. The projection optical system PL includes a part of the third exposure light EL3 from the third pattern PA3 branched by the second synthesis optical element 22 and the fourth exposure light EL4 from the fourth pattern PA4 branched by the second synthesis optical element 22. Synthesize a part of

  The projection optical system PL of the present embodiment includes a first reflecting surface 41 disposed in a first optical path BR1 that is an optical path of the first and second exposure light beams EL1 and EL2 from the first combining optical element 21, and a second reflecting surface 41. An optical member 40 having a second reflecting surface 42 disposed in a second optical path BR2 that is an optical path of the third and fourth exposure lights EL3 and EL4 from the combining optical element 22 is provided. The first and second exposure lights EL1 and EL2 traveling on the first optical path BR1 are guided to one terminal optical element FL of the fifth optical system 35 via the first reflecting surface 41. The third and fourth exposure lights EL3 and EL4 traveling on the second optical path BR2 are guided to one terminal optical element FL of the fifth optical system 35 via the second reflecting surface 42.

  In the present embodiment, the optical member 40 includes a prism. The first reflecting surface 41 and the second reflecting surface 42 are disposed at or near the positions optically conjugate with the first, second, third, and fourth exposure areas AR1, AR2, AR3, AR4. In the present embodiment, the first reflecting surface 41 and the second reflecting surface 42 are inclined surfaces that are inclined with respect to the XY plane. A ridge line (vertex) 43 between the first reflecting surface 41 and the second reflecting surface 42 is parallel to the X axis. The optical member 40 is formed with a convex portion that protrudes so as to approach the fifth optical system 35 including the terminal optical element FL by the first reflecting surface 41 and the second reflecting surface 42. A cross-sectional shape parallel to the YZ plane of the convex portion of the optical member 40 is formed in a V shape by the first reflecting surface 41 and the second reflecting surface 42.

  In the projection optical system PL of the present embodiment, the first exposure light beam EL1 and the second exposure light beam EL2 from the first synthesis optical element 21 are passed through the first reflection surface 41 and the terminal optical element FL, and the first exposure area AR1. And the second exposure area AR2. The third exposure area AR3 and the fourth exposure area AR4 can be irradiated with the third exposure light EL3 and the fourth exposure light EL4 from the second synthesis optical element 22 via the second reflection surface 42 and the terminal optical element FL. It is.

  In the present embodiment, each of the first, second, third, fourth, and fifth optical systems 31, 32, 33, 34, and 35 includes a plurality of refractive optical elements each having a predetermined refractive power. A pattern image is formed once. Therefore, the number of times of image formation by the optical system (refractive optical system) disposed between the first pattern PA1 and the first exposure area AR1 is two. The number of times of image formation by the optical system (refractive optical system) disposed between the second pattern PA2 and the second exposure area AR2 is also two, and is disposed between the third pattern PA3 and the third exposure area AR3. The number of times of image formation by the optical system (refractive optical system) is twice, and the number of times of image formation by the optical system (refractive optical system) arranged between the fourth pattern PA4 and the fourth exposure area AR4 is also two times. is there.

  Next, the substrate stage 5 will be described. The substrate stage 5 is movable on the base member BP on the light emission side of the projection optical system PL, that is, on the image plane side of the projection optical system PL. The substrate stage 5 receives the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4 irradiated with the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4. The substrate P can be held and moved within the predetermined area. As shown in FIG. 1, the substrate stage 5 includes a substrate holder 5H that holds the substrate P. The substrate holder 5H holds the substrate P so that the surface of the substrate P and the XY plane are substantially parallel. The substrate stage 5 is driven by a substrate stage driving device 5D including an actuator such as a linear motor, and the substrate P is held on the substrate holder 5H, and the X axis, Y axis, Z axis, θX, It can move in directions of 6 degrees of freedom in the θY and θZ directions.

  The position information of the substrate stage 5 (and consequently the substrate P) is measured by the laser interferometer 65 of the measurement system 6. The laser interferometer 65 measures positional information regarding the X axis, the Y axis, and the θZ direction of the substrate stage 5 using the reflective surface 65K provided on the substrate stage 5. Further, surface position information (position information regarding the Z-axis, θX, and θY directions) of the surface of the substrate P held by the substrate stage 5 is detected by a focus / leveling detection system (not shown). The control device 7 drives the substrate stage driving device 5D based on the measurement result of the laser interferometer 65 and the detection result of the focus / leveling detection system, and controls the position of the substrate P held on the substrate stage 5.

  As disclosed in, for example, US Pat. No. 6,608,681, the focus leveling detection system measures the position information of the substrate in the Z-axis direction at each of the plurality of measurement points. Information is detected. At least some of the plurality of measurement points may be set within the exposure area, or all measurement points may be set outside the exposure area. Further, the laser interferometer may be capable of measuring position information of the substrate stage in the Z-axis, θX, and θY directions, and details thereof are disclosed in, for example, JP-T-2001-510577 (corresponding to International Publication No. 1999/28790). It is disclosed. In this case, it is not necessary to provide a focus / leveling detection system so that position information in the Z-axis direction can be measured during the exposure operation of the substrate, and at least during the exposure operation, the measurement result of the laser interferometer is used to perform Z You may make it perform the position control of the board | substrate regarding an axis | shaft, (theta) X, and (theta) Y direction.

  FIG. 3 is a schematic diagram showing the positional relationship between the shot area S on the substrate P and the first, second, third, and fourth exposure areas AR1, AR2, AR3, AR4. As shown in FIG. 3, the first exposure area AR1 by the first exposure light EL1 on the substrate P is set to a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction. The second exposure area AR2 by the second exposure light EL2 on the substrate P is also set to a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction. The third exposure area AR3 by the third exposure light EL3 on the substrate P is also set to a rectangular shape (slit shape) with the X-axis direction as the longitudinal direction. The fourth exposure area AR4 by the fourth exposure light EL4 on the substrate P is also set in a rectangular shape (slit shape) whose longitudinal direction is the X-axis direction. In the present embodiment, the first exposure area AR1 and the second exposure area AR2 overlap, and the third exposure area AR3 and the fourth exposure area AR4 overlap. Further, the first and second exposure areas AR1 and AR2 and the third and fourth exposure areas AR3 and AR4 are separated from each other in the Y-axis direction (scanning direction of the substrate P). In the present embodiment, the first, second, third, and fourth exposure areas AR1, AR2, AR3, AR4 irradiated with the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4. Are projection areas of the projection optical system PL.

  The substrate stage 5 is movable in the Y-axis direction with respect to the first, second, third, and fourth exposure regions AR1, AR2, AR3, AR4 on the shot region S on the substrate P. When the control device 7 exposes the substrate P, the first, second, third, and fourth shot areas S on the substrate P are formed by the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4. The substrate stage 5 is controlled to move the substrate P in the Y-axis direction so as to pass through the fourth exposure areas AR1, AR2, AR3, AR4.

  Next, a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described.

  The first, second, third, and fourth masks M1, M2, M3, and M4 are loaded on the first, second, third, and fourth mask stages 1, 2, 3, and 4, respectively. After the substrate P is loaded on the substrate stage 5, the control device 7 may, for example, include the first pattern PA1 of the first mask M1, the second pattern PA2 of the second mask M1, and the third pattern PA3 of the third mask M3. Then, predetermined processing such as adjustment of the positional relationship between the fourth pattern PA4 of the fourth mask M4 and the shot region S on the substrate P is performed. After the predetermined processing is completed, the control device 7 starts exposure to the shot area S of the substrate P.

  The first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 emitted from the first, second, third, and fourth illumination systems IL1, IL2, IL3, and IL4, respectively, , Second, third, fourth mask stages 1, 2, 3, 4 on first, second, third, fourth masks M1, M2, M3, M4 first, second, third, second The four patterns PA1, PA2, PA3, and PA4 are illuminated.

  The first exposure light EL1 from the first pattern PA1 of the first mask M1 enters the first combining optical element 21 via the first optical system 31. A part of the first exposure light EL1 from the first pattern PA1 passes through the predetermined surface 21A of the first combining optical element 21 and passes through the first reflecting surface 41 to the terminal optical element FL of the fifth optical system 35. It is guided and irradiated to the first exposure area AR1. An image of the first pattern PA1 is formed in the first exposure area AR1 based on the irradiated first exposure light EL1.

  Further, the second exposure light EL <b> 2 from the second pattern PA <b> 2 of the second mask M <b> 2 enters the first combining optical element 21 through the second optical system 32. A part of the second exposure light EL2 from the second pattern PA2 is reflected by the predetermined surface 21A of the first combining optical element 21 and passes through the first reflecting surface 41 to the terminal optical element FL of the fifth optical system 35. It is guided and irradiated to the second exposure area AR2. An image of the second pattern PA2 is formed in the second exposure area AR2 based on the irradiated second exposure light EL2.

  In addition, the third exposure light EL3 from the third pattern PA3 of the third mask M3 enters the second combining optical element 22 via the third optical system 33. Part of the third exposure light EL3 from the third pattern PA3 is reflected by the predetermined surface 22A of the second synthesis optical element 22 and passes through the second reflection surface 42 to the terminal optical element FL of the fifth optical system 35. It is guided and irradiated to the third exposure area AR3. In the third exposure area AR3, an image of the third pattern PA3 is formed based on the irradiated third exposure light EL3.

  Further, the fourth exposure light EL4 from the fourth pattern PA4 of the fourth mask M4 enters the second combining optical element 22 through the fourth optical system 34. Part of the fourth exposure light EL4 from the fourth pattern PA4 passes through the predetermined surface 22A of the second synthesis optical element 22 and passes through the second reflection surface 42 to the terminal optical element FL of the fifth optical system 35. It is guided and irradiated to the fourth exposure area AR4. In the fourth exposure area AR4, an image of the fourth pattern PA4 is formed based on the irradiated fourth exposure light EL4.

  In this embodiment, under the control of the control device 7, the first, second, third, and fourth masks M1, which are the first, second, third, and fourth mask stages 1, 2, 3, and 4, While moving the shot region S on the substrate P in the scanning direction (Y-axis direction) by the substrate stage 5 in synchronization with the movement of each of M2, M3, and M4 in the scanning directions (Y-axis direction and Z-axis direction) First, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4, and first, second, and third masks M1, M2, M3, and M4. The fourth patterns PA1, PA2, PA3, PA4 are illuminated. The first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 corresponding to the first, second, third, and fourth exposure regions AR1, AR2, AR3, and AR4, respectively, on the substrate P. And the shot area S of the substrate P is subjected to multiple exposure with the images of the first, second, third and fourth patterns PA1, PA2, PA3, PA4.

  Under the control of the control device 7, the measurement system 6 monitors the position information of the first, second, third, and fourth mask stages 1, 2, 3, 4, and the substrate stage 5 while monitoring the first and second. The movement of the substrate P in the Y-axis direction with respect to the third and fourth exposure areas AR1, AR2, AR3, AR4, the movement of the first mask M1 in the Z-axis direction with respect to the first illumination area IA1, and the second illumination area Movement of the second mask M2 in the Y-axis direction with respect to IA2, movement of the third mask M3 in the Y-axis direction with respect to the third illumination area IA3, and movement of the fourth mask M4 in the Z-axis direction with respect to the fourth illumination area IA4 The movement is performed synchronously. The first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 are respectively irradiated to the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4, The shot area S on the substrate P is subjected to multiple exposure. In the present embodiment, during exposure of the shot area S on the substrate P, for example, when the substrate P is moved in the + Y direction, the first mask M1 is moved in the + Z direction, and the second mask M2 is moved in the + Y direction. Then, the third mask M3 is moved in the + Y direction, and the fourth mask M4 is moved in the -Z direction.

  In the present embodiment, the image of the first pattern PA1, the image of the second pattern PA2, the image of the third pattern PA3, and the image of the fourth pattern PA4 are formed in one shot area S on the substrate P by one scanning operation. And multiple exposure. The photosensitive material layer in the shot area S on the substrate P is subjected to the first exposure light EL1 irradiated to the first exposure area AR1 and the second exposure light irradiated to the second exposure area AR2 without going through a development process or the like. Multiple exposure is performed with EL2, the third exposure light EL3 irradiated on the third exposure area AR3, and the fourth exposure light EL4 irradiated on the fourth exposure area AR4.

  A plurality of shot areas S are provided on the substrate P. Under the control of the control device 7, the scanning operation in the −Y direction and the scanning operation in the + Y direction of the substrate P are repeated, and a plurality of shot areas S on the substrate P are sequentially subjected to multiple exposure.

  As described above, in the present embodiment, four pattern images are formed (projected) in the four exposure regions irradiated with the corresponding exposure light, and the shot regions S on the substrate P are formed by the four pattern images. Multiple exposure can be performed efficiently. In this embodiment, each of the first to fourth exposure areas AR1 to AR4 is irradiated with each of the first to fourth exposure lights EL1 to EL4, and the shot area S on the substrate P is first to first. By moving the substrate P in the Y-axis direction so as to pass through the four exposure regions AR1 to AR4, the shot region S of the substrate P can be efficiently subjected to multiple exposure. In this embodiment, when the shot region S on the substrate P is subjected to multiple exposure, one shot region S can be exposed with the images of the first to fourth patterns PA1 to PA4 by one scanning operation. This is advantageous for improving the throughput. Further, by repeating the scanning operation in the −Y direction and the scanning operation in the + Y direction of the substrate P, a plurality of shot regions S on the substrate P can be efficiently subjected to multiple exposure. In addition, since one shot region S is subjected to multiple exposure by one scanning operation, each of the images of the first to fourth patterns PA1 to PA4 can be formed in each shot region S in a desired positional relationship.

  In the present embodiment, the first to fourth mask stages 1 to 4 holding the first to fourth masks M1 to M4 are moved in the optical path direction (first to fourth exposure light EL1 to EL4). The optical systems 31 to 34 may be provided so as to be finely movable). Thereby, the position of the image plane on which the images of the first to fourth patterns PA1 to PA4 are formed by the projection optical system PL can be adjusted.

Second Embodiment
Next, 2nd Embodiment is described with reference to the schematic diagram of FIG. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  A characteristic part of the second embodiment different from the first embodiment described above is that the first reflecting surface 41 is not disposed in the first optical path BR1 that is the optical path of the exposure light from the first combining optical element 21, and the first embodiment The second reflecting surface 42 is not disposed in the second optical path BR2 that is the optical path of the exposure light from the second combining optical element 22. That is, as shown in FIG. 4, the projection optical system PL of the present embodiment has a configuration in which the first reflecting surface 41 and the second reflecting surface 42 are omitted.

  As shown in FIG. 4, the projection optical system PL guides the first exposure light EL <b> 1 from the first synthesis optical element 21, the second synthesis optical element 22, and the first pattern PA <b> 1 to the first synthesis optical element 21. A first optical system 31, a second optical system 32 that guides the second exposure light EL2 from the second pattern PA2 to the first composite optical element 21, and a third exposure light EL3 from the third pattern PA3. A third optical system 33 that leads to the second optical system 34, a fourth optical system 34 that guides the fourth exposure light EL4 from the fourth pattern PA4 to the second combining optical element 22, and a fifth optical system 35 that includes the terminal optical element FL. I have. The first and second exposure lights EL1 and EL2 from the first synthesis optical element 21 are incident on one incident-side optical element SL of the fifth optical system 35, and the third and fourth from the second synthesis optical element 22 are entered. The exposure lights EL3 and EL4 are incident on one incident side optical element SL of the fifth optical system 35. Each of the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 incident on the incident-side optical element SL passes through the terminal optical element FL, and the first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 respectively. Each of the four exposure areas AR1, AR2, AR3, and AR4 is irradiated. Images of the first, second, third, and fourth patterns PA1, AP2, PA3, and PA4 are formed in the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4, respectively. The

  Also in the present embodiment, the images of the first to fourth patterns PA1 to PA4 formed based on the first to fourth exposure lights EL1 to EL4 irradiated to the first to fourth exposure areas AR1 to AR4, respectively. The shot area S on the substrate P can be efficiently subjected to multiple exposure.

  In the first and second embodiments described above, the shot region S on the substrate P is subjected to multiple exposure (quadruple exposure) with four exposure lights EL1 to EL4, but multiple exposure (triple exposure) is performed with three exposure lights. Exposure). For example, the shot region S on the substrate P can be subjected to multiple exposure (triple exposure) with the first to third exposure lights EL1 to EL3 by stopping the irradiation of the fourth exposure light EL4 from the fourth mask M4. it can.

  In the first and second embodiments described above, the shot region S on the substrate P may be subjected to multiple exposure using five or more exposure lights. For example, in FIG. 1, the fifth exposure light from the fifth pattern is incident on at least one of the first synthesis optical element 21 and the second synthesis optical element 22. Accordingly, at least one of the first combining optical element 21 and the second combining optical element 22 combines at least three exposure lights, and the projection optical system PL transfers at least five exposure lights to the shot region S on the substrate P. Can be irradiated. Thereby, the exposure apparatus EX can perform multiple exposure of the shot area S on the substrate P using five or more exposure lights.

  In the first and second embodiments described above, the first exposure area AR1 and the second exposure area AR2 overlap, and the third exposure area AR3 and the fourth exposure area AR4 overlap. The first and second exposure areas AR1 and AR2 and the third and fourth exposure areas AR3 and AR4 are separated from each other in the Y-axis direction (scanning direction of the substrate P). However, the first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4 may be separated from each other in the Y-axis direction, and only two of the four exposure areas are exposed. It may be duplicated.

<Third Embodiment>
Next, 3rd Embodiment is described with reference to the schematic diagram of FIG. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  A characteristic part of the present embodiment is that at least one of the first synthesis optical element 21 and the second synthesis optical element 22 is provided with a third synthesis optical element different from the first synthesis optical element 21 and the second synthesis optical element 22. 23, the exposure light EL25 from 23 is guided.

  In FIG. 5, the projection optical system PL includes a first synthesis optical element 21, a second synthesis optical element 22, and a third synthesis optical element 23. The first synthesis optical element 21 receives the first exposure light EL1 from the first pattern PA1 and the exposure light EL25 from the third synthesis optical element 23. The second synthesis optical element 22 receives the third pattern PA3. The third exposure light EL3 from the fourth exposure light EL4 and the fourth exposure light EL4 from the fourth pattern PA4 are guided. In the present embodiment, the third exposure optical element EL2 from the second pattern PA2 and the fifth exposure light EL5 from the fifth pattern PA5 are guided to the third synthesis optical element 23. The third synthesis optical element 23 synthesizes the second exposure light EL2 and the fifth exposure light EL5, and irradiates the synthesized exposure light EL25 toward the first synthesis optical element 21. In the present embodiment, the shot area S on the substrate P is subjected to multiple exposure with five exposure lights EL1 to EL5.

  Also in the present embodiment, the images of the first to fifth patterns PA1 to PA5 formed based on the first to fifth exposure lights EL1 to EL5 irradiated to the first to fifth exposure areas AR1 to AR5, respectively. The shot area S on the substrate P can be efficiently subjected to multiple exposure.

<Fourth embodiment>
Next, 4th Embodiment is described with reference to the schematic diagram of FIG. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  The projection optical system PL of this embodiment includes a first synthesis optical element 21, a second synthesis optical element 22, first and second exposure lights EL 1 and EL 2 from the first synthesis optical element 21, and a second synthesis optical element. 22 and a third optical element 23 ′ through which the third and fourth exposure lights EL 3 and EL 4 are guided. Further, the projection optical system PL performs the first synthesis of the first optical system 31 that guides the first exposure light EL1 from the first pattern PA1 to the first synthesis optical element 21, and the second exposure light EL2 from the second pattern PA2. A second optical system 32 that leads to the optical element 21, a third optical system 33 that guides the third exposure light EL3 from the third pattern PA3 to the second combining optical element 22, and a fourth exposure light EL4 from the fourth pattern PA4. And a fourth optical system 34 that guides the light to the second combining optical element 22.

  The first exposure light EL1 from the first pattern PA1 of the first mask M1 enters the first combining optical element 21 via the first optical system 31. Part of the first exposure light EL1 from the first pattern PA1 passes through the predetermined surface 21A of the first combining optical element 21 and is guided to the third combining optical element 23 '.

  Further, the second exposure light EL <b> 2 from the second pattern PA <b> 2 of the second mask M <b> 2 enters the first combining optical element 21 through the second optical system 32. A part of the second exposure light EL2 from the second pattern PA2 is reflected by the predetermined surface 21A of the first combining optical element 21 and guided to the third combining optical element 23 '.

  In addition, the third exposure light EL3 from the third pattern PA3 of the third mask M3 enters the second combining optical element 22 via the third optical system 33. A part of the third exposure light EL3 from the third pattern PA3 is reflected by the predetermined surface 22A of the second synthesis optical element 22 and guided to the third synthesis optical element 23 '.

  Further, the fourth exposure light EL4 from the fourth pattern PA4 of the fourth mask M4 enters the second combining optical element 22 through the fourth optical system 34. Part of the fourth exposure light EL4 from the fourth pattern PA4 passes through the predetermined surface 22A of the second synthesis optical element 22 and is guided to the third synthesis optical element 23 '.

  The first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4 incident on the third combining optical element 23 ′ are combined by the third combining optical element 23 ′ and passed through the terminal optical element FL. The first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4 are irradiated. The first, second, third, and fourth exposure areas AR1, AR2, AR3, and AR4 are based on the irradiated first, second, third, and fourth exposure lights EL1, EL2, EL3, and EL4. Images of the first, second, third, and fourth patterns PA1, PA2, PA3, and PA4 are formed.

  FIG. 7 is a schematic diagram showing the positional relationship between the shot area S on the substrate P and the first, second, third, and fourth exposure areas AR1, AR2, AR3, AR4. As shown in FIG. 7, the first exposure area AR1, the second exposure area AR2, the third exposure area AR3, and the fourth exposure area AR4 on the substrate P are at least in the Y-axis direction (scanning direction of the substrate P). Duplicate.

  Also in the present embodiment, the images of the first to fourth patterns PA1 to PA4 formed based on the first to fourth exposure lights EL1 to EL4 irradiated to the first to fourth exposure areas AR1 to AR4, respectively. The shot area S on the substrate P can be efficiently subjected to multiple exposure.

  In the fourth embodiment, the shot area S on the substrate P is subjected to multiple exposure (quadruple exposure) with four exposure lights EL1 to EL4, but multiple exposure (triple exposure) is performed with three exposure lights. It may be. For example, the shot region S on the substrate P can be subjected to multiple exposure (triple exposure) with the first to third exposure lights EL1 to EL3 by stopping the irradiation of the fourth exposure light EL4 from the fourth mask M4. it can.

  In the fourth embodiment described above, the shot region S on the substrate P may be subjected to multiple exposure using five or more exposure lights. For example, in FIG. 6, the fifth exposure light from the fifth pattern is incident on at least one of the first combining optical element 21, the second combining optical element 22, and the third combining optical element 23 '. Accordingly, at least one of the first combining optical element 21, the second combining optical element 22, and the third combining optical element 23 ′ combines at least three exposure lights, and the projection optical system PL has at least five exposures. The shot region S on the substrate P can be irradiated with light.

<Fifth Embodiment>
Next, 5th Embodiment is described with reference to the schematic diagram of FIG. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  In each of the above-described embodiments, all of the exposure lights EL1 to EL4 emitted from the illumination system and guided through each pattern are guided to one optical element FL. In the present embodiment, as shown in the schematic diagram of FIG. 8, at least two exposure lights EL1 and EL2 among a plurality (three or more) of exposure lights are guided to the terminal optical element FL via the synthesis optical element 21, The remaining exposure light EL3 may be guided to an optical element FL ′ different from the last optical element FL. Also in the present embodiment, the images of the first to third patterns PA1 to PA3 formed based on the first to third exposure lights EL1 to EL3 irradiated to the first to third exposure areas AR1 to AR3, respectively. The shot area S on the substrate P can be efficiently subjected to multiple exposure.

  In the first to fifth embodiments described above, the case where a half mirror is used as the combining optical element has been described as an example. However, for example, a polarizing beam splitter may be used as the combining optical element.

  In each of the above-described embodiments, the projection optical system PL is not limited to that described above, and may be, for example, a unity magnification system or an enlargement system. The projection optical system PL may be a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, a catadioptric system that includes both a reflective optical element and a refractive optical element, or the like.

  In the above-described embodiments, at least one of the size and shape of each exposure region may be different from each other. For example, the width in the X-axis direction and / or the width in the Y-axis direction may be different between the first exposure area AR1 and the second exposure area AR2.

  In each of the above-described embodiments, while the shot area S passes through each exposure area, the exposure light EL is continuously irradiated to each exposure area. However, the shot area S passes through at least one exposure area. The exposure light may be irradiated only during a part of the period. That is, only a part of the shot area S may be subjected to multiple exposure.

In each of the above-described embodiments, for example, a liquid immersion method as disclosed in International Publication No. 99/49504 pamphlet or the like may be applied. That is, a liquid immersion area may be formed on the substrate P so as to cover each exposure area, and each exposure light may be irradiated onto the substrate P through the liquid. As the liquid, water (pure water) may be used, or a material other than water, for example, a fluorinated fluid such as perfluorinated polyether (PFPE) or fluorinated oil, or cedar oil may be used. Good. As the liquid, a liquid having a higher refractive index with respect to exposure light than water, for example, a liquid with a refractive index of about 1.6 to 1.8 may be used. Furthermore, the terminal optical element FL may be formed of a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more). Here, as the liquid having a refractive index higher than that of pure water (for example, 1.5 or more), for example, C-, such as isopropanol having a refractive index of about 1.50 and glycerol (glycerin) having a refractive index of about 1.61. Examples thereof include a predetermined liquid having an H bond or an O—H bond, a predetermined liquid (organic solvent) such as hexane, heptane, and decane, or decalin (Decalin: Decahydronaphthalene) having a refractive index of about 1.60. The liquid may be a mixture of any two or more of these liquids, or may be a liquid obtained by adding (mixing) at least one of these liquids to pure water. Furthermore, the liquid may be a solution obtained by adding (mixing) a base or acid such as H ⁺ , Cs ⁺ , K ⁺ , Cl ⁻ , SO ₄ ²⁻ , PO ₄ ^2−, etc. to pure water. What added fine particles, such as a thing, may be used. As a liquid, the light absorption coefficient is small, the temperature dependency is small, and the projection optical system and / or the photosensitive material (or top coat film or antireflection film) applied to the surface of the substrate is used. It is preferable that it is stable. It is also possible to use a supercritical fluid as the liquid. The substrate can be provided with a top coat film for protecting the photosensitive material and the base material from the liquid. Further, the terminal optical element is made of, for example, quartz (silica) or a single crystal material of a fluoride compound such as calcium fluoride (fluorite), barium fluoride, strontium fluoride, lithium fluoride, and sodium fluoride. Alternatively, it may be formed of a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more). Examples of the material having a refractive index of 1.6 or more include sapphire and germanium dioxide disclosed in International Publication No. 2005/059617 pamphlet, or potassium chloride (refractive index disclosed in International Publication No. 2005/059618 pamphlet). The rate can be about 1.75) or the like.

  When the immersion method is used, for example, as disclosed in International Publication No. 2004/019128 (corresponding US Patent Publication No. 2005/0248856), in addition to the optical path on the image plane side of the termination optical element, the termination is performed. The optical path on the object plane side of the optical element may be filled with liquid. Furthermore, a thin film having a lyophilic property and / or a dissolution preventing function may be formed on a part (including at least a contact surface with the liquid) or the entire surface of the terminal optical element. Quartz has a high affinity with a liquid and does not require a dissolution preventing film, but fluorite preferably forms at least a dissolution preventing film.

  In each of the embodiments described above, the interferometer system is used as the measurement system 6 to measure the positional information of the mask stage and the substrate stage. However, the present invention is not limited to this, for example, a scale (diffraction grating) provided on the upper surface of the substrate stage. ) May be used. In this case, it is preferable that a hybrid system including both the interferometer system and the encoder system is used, and the measurement result of the encoder system is calibrated using the measurement result of the interferometer system. Further, the position of the substrate stage may be controlled by switching between the interferometer system and the encoder system or using both.

  In addition, as the substrate P in each of the above embodiments, not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask (reticle) used in an exposure apparatus ( Synthetic quartz, a silicon wafer), a film member, or the like is applied. Further, the shape of the substrate is not limited to a circle, and may be other shapes such as a rectangle.

  In addition, the exposure apparatus EX of each of the above embodiments includes, for example, JP-A-11-135400 (corresponding international publication 1999/23692) and JP-A-2000-164504 (corresponding US Pat. No. 6,897,963). As described in the above, a measurement stage that is movable independently of a substrate stage that holds a substrate and that includes a measurement member (for example, a reference member on which a reference mark is formed and / or various photoelectric sensors) is mounted. May be provided.

  In each of the above embodiments, a mask is used to form a pattern. Instead, an electronic mask (also referred to as a variable shaping mask, an active mask, or a pattern generator) that generates a variable pattern can be used. . As an electronic mask, for example, a DMD (Deformable Micro-mirror Device or Digital Micro-mirror Device) which is a kind of non-light-emitting image display element (also referred to as Spatial Light Modulator (SLM)) can be used. The DMD has a plurality of reflecting elements (micromirrors) that are driven based on predetermined electronic data, and the plurality of reflecting elements are arranged in a two-dimensional matrix on the surface of the DMD and are driven by element units for exposure. Reflects and deflects light. The angle of the reflecting surface of each reflecting element is adjusted. The operation of the DMD can be controlled by a controller. The control device drives the DMD reflecting element based on electronic data (pattern information) corresponding to the pattern to be formed on the substrate, and patterns the exposure light irradiated by the illumination system with the reflecting element. Using the DMD eliminates the need for mask replacement work and mask alignment on the mask stage when the pattern is changed, compared to exposure using a mask (reticle) on which a pattern is formed. Become. In an exposure apparatus using an electronic mask, the mask stage may not be provided, and the substrate may be simply moved in the X-axis and Y-axis directions by the substrate stage. An exposure apparatus using DMD is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 8-313842, 2004-304135, and US Pat. No. 6,778,257.

  In addition, the present invention relates to JP-A-10-163099, JP-A-10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549,269 and No. 6,590,634), JP 2000-505958 A (corresponding to US Pat. No. 5,969,441) and the like, and a multi-stage type exposure apparatus having a plurality of substrate stages. Applicable.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ), An exposure apparatus for manufacturing a micromachine, a MEMS, a DNA chip, a reticle, a mask, or the like.

  As long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above embodiments and modifications is incorporated herein by reference.

  As described above, the exposure apparatus EX of the above embodiment is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

As shown in FIG. 9, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. The substrate processing process such as step 203, the step of exposing the mask pattern to the substrate by the exposure apparatus EX of the above-described embodiment, the step of developing the exposed substrate, the heating (curing) of the developed substrate, and the etching step Are manufactured through a step 204 including a device assembly step (including processing processes such as a dicing process, a bonding process, and a package process) 205, an inspection step 206, and the like.

Claims (15)

In an exposure apparatus that exposes a substrate,
Including one optical element to which at least two or more of three or more exposure lights are guided, and comprising an optical system that irradiates three or more exposure areas with the three or more exposure lights,
An exposure apparatus that performs multiple exposure of a predetermined area on the substrate with images of a plurality of patterns formed in the three or more exposure areas.   The exposure apparatus according to claim 1, wherein all of the three or more exposure lights are guided to the one optical element.   The exposure apparatus according to claim 1, wherein the one optical element faces the surface of the substrate.   The exposure apparatus according to claim 1, wherein the optical system includes a combining optical element that combines at least two or more of the three or more exposure lights.   The exposure apparatus according to claim 4, wherein the optical system includes a first combining optical element and a second combining optical element. The optical system includes a first reflecting surface disposed in a first optical path that is an optical path of exposure light from the first synthetic optical element, and a second optical path that is an optical path of exposure light from the second synthetic optical element. A second reflective surface disposed therein,
The exposure light traveling in the first optical path is guided to the one optical element through the first reflection surface, and the exposure light traveling in the second optical path is transmitted through the second reflection surface to the one optical element. 6. An exposure apparatus according to claim 5, wherein   The exposure apparatus according to claim 6, wherein the first reflection surface and the second reflection surface are disposed at a position optically conjugate with the exposure region or in the vicinity thereof.   The optical system includes a first optical system that guides first exposure light to the first composite optical element, a second optical system that guides second exposure light to the first composite optical element, and third exposure light to the first composite optical element. The exposure apparatus according to claim 5, further comprising: a third optical system that guides the second composite optical element; and a fourth optical system that guides the fourth exposure light to the second composite optical element.   9. The exposure apparatus according to claim 8, wherein each of the first, second, third, and fourth exposure lights includes exposure light from each of the first, second, third, and fourth patterns that are different from each other.   The at least one of the first, second, third, and fourth exposure lights includes exposure light from a third synthesis optical element different from the first synthesis optical element and the second synthesis optical element. 8. The exposure apparatus according to 8.   The exposure apparatus according to claim 1, wherein the predetermined area on the substrate is subjected to multiple exposure while relatively moving the plurality of exposure areas and the predetermined area on the substrate in a predetermined scanning direction. .   The exposure apparatus according to claim 11, wherein at least two of the plurality of exposure areas are separated in the predetermined direction.   The exposure apparatus according to claim 11, wherein at least two of the plurality of exposure areas partially overlap with each other in the predetermined direction. A first moving device capable of moving a plurality of masks having each of the plurality of patterns in predetermined scanning directions with respect to exposure light;
A second moving device capable of moving a predetermined area on the substrate in a predetermined scanning direction with respect to the exposure area;
In synchronization with the movement of the plurality of masks in each scanning direction by the first moving device, the predetermined regions on the substrate are multiplexed while the predetermined region on the substrate is moved in the scanning direction by the second moving device. The exposure apparatus according to claim 1, wherein exposure is performed. The device manufacturing method using the exposure apparatus as described in any one of Claims 1-14.

Images