JP2012174883A - Exposure device, exposure method, and manufacturing method of device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure device and an exposure method in which deterioration of the line width precision of an exposure pattern is suppressed, and to provide a manufacturing method of the device.SOLUTION: The exposure device comprises an irradiation unit which irradiates a mask with pulse oscillated first illumination light having a first wavelength, and pulse oscillated second illumination light having a second wavelength different from the first wavelength. The irradiation unit has a delay setting unit which sets the irradiation timing of the first illumination light and the second illumination light so that there is a predetermined time lag between the timing at which the mask is irradiated with the first illumination light and the timing at which the mask is irradiated with the second illumination light.

Description

  The present invention relates to an exposure apparatus, an exposure method, and a device control method for transferring a mask pattern onto a substrate.

  In a so-called lithography process in which a pattern formed on a mask or reticle (hereinafter collectively referred to as “mask”) is transferred onto a photosensitive substrate, the mask pattern is shot on the photosensitive substrate via a projection optical system (exposure). An exposure apparatus that projects onto an area is used.

  The resolution and depth of focus of the exposure apparatus are represented by the resolution R and depth of focus δ of the projection optical system. As shown in equation (1), the resolution R increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases. On the other hand, as shown in Equation (2), the depth of focus δ decreases as the exposure wavelength decreases and the numerical aperture increases.

R = k1 · λ / NA (1)
δ = ± k2 · λ / NA2 (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection exposure system, and k1 and k2 are process coefficients.
Due to the need for higher resolution in recent years, the exposure wavelength used in the exposure apparatus has become shorter year by year, and the numerical aperture of the projection optical system has also increased. In the node generation having a size of 65 nm to 32 nm, an exposure wavelength is ArF excimer laser 193 nm, and an immersion exposure apparatus using an immersion method is used. As disclosed in Patent Document 1, the immersion method fills the space between the lower surface of the projection optical system and the substrate surface with a liquid such as pure water, and the wavelength of exposure light in the liquid is 1 in the air. / N (n is a refractive index in the air and is usually about 1.2 to 1.6), and is an exposure method for improving the resolution.

International Publication No. 99/49504

  When the exposure wavelength is shortened and the numerical aperture is increased as the resolution is increased, the depth of focus δ is reduced from the equation (2). That is, the depth of focus that can be secured in exposure of a predetermined pattern is reduced.

  In addition, excimer laser light has very high spatial coherence, and light in the same phase interferes with each other, resulting in uneven illuminance distribution of light that illuminates the mask, and a pattern formed on the substrate (hereinafter referred to as an exposure pattern). Aggravates variation in line width.

  Due to these factors, variations in the line width of the exposure pattern may increase due to aberration variations in the projection optical system, errors between exposure apparatuses, and the like, and the line width accuracy of the exposure pattern may deteriorate.

  The present invention has been made in view of the above problems, and by suppressing unevenness in the illuminance distribution of the light that illuminates the mask while increasing the depth of focus, it is possible to suppress variations in the line width of the exposure pattern, thereby exposing the exposure pattern. It is an object of the present invention to provide an exposure apparatus, an exposure method, and a device manufacturing method that suppress the deterioration of the line width accuracy.

  An exposure apparatus according to a first aspect of the present invention has a first wavelength, pulsed first illumination light, a second wavelength different from the first wavelength, and pulsed An irradiation unit for irradiating the mask with the second illumination light is provided, and the irradiation unit is configured such that the timing at which the first illumination light is irradiated onto the mask and the timing at which the second illumination light is irradiated onto the mask are shifted by a predetermined time. The delay setting part which sets the timing of irradiation of 1st illumination light and 2nd illumination light is included.

  In the exposure method according to the second aspect of the present invention, the wavelength of the first illumination light that is pulsed is set to the first wavelength, and the wavelength of the second illumination light that is pulsed is the first wavelength. Setting a different second wavelength, shifting a timing at which the first illumination light is applied to the mask and a timing at which the second illumination light is applied to the mask by a predetermined time, and setting the mask to the first illumination light Illuminating with the second illumination light and transferring the pattern to the substrate.

  The device manufacturing method according to the third aspect of the present invention includes transferring the mask pattern onto the substrate and developing the substrate using the exposure method according to the second aspect of the present invention.

It is a schematic block diagram which shows the exposure apparatus which concerns on 1st Embodiment. It is a top view of the light source unit which concerns on 1st Embodiment. 6 is a flowchart showing an example of an exposure operation in which a substrate is exposed after determining two wavelengths and a delay time according to the first embodiment. It is a schematic block diagram which shows the light source unit which concerns on 2nd Embodiment. It is a schematic block diagram which shows the structure of the 2 wavelength branch apparatus and delay branch apparatus which concern on 2nd Embodiment. It is a schematic block diagram which shows the light source unit which concerns on 3rd Embodiment. It is a schematic block diagram of the delay optical system which concerns on 3rd Embodiment. It is a flowchart which shows an example of the manufacturing process of a microdevice.

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

  Further, in the following description, an XYZ orthogonal coordinate system is set, and description will be made with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment of the present invention will be described.

  First, the configuration of the exposure apparatus EX of the present embodiment will be described with reference to FIG.

  FIG. 1 is a schematic block diagram that shows an exposure apparatus EX in the present embodiment.

  The exposure apparatus EX includes a light source unit ELSU that emits pulsed illumination light EL, an illumination optical system IL that illuminates the mask M with the emitted illumination light EL, a mask stage 1 that can hold the mask M, and illumination. Projection optical system PL that projects a pattern image of mask M illuminated by light EL onto substrate P, substrate table 3 that can hold substrate P, substrate stage 2 that drives substrate table 3, and substrate table 3 The liquid supply device 4 that supplies the liquid LQ, the liquid recovery device 5 that recovers the supplied liquid LQ, an alignment system (not shown) that aligns the mask M and the substrate P, and the operation of the exposure apparatus EX are controlled. A main control unit CONT is provided.

  The light source unit ELSU emits light of two different wavelengths. Details of the configuration of the light source unit ELSU will be described later.

  The illumination optical system IL illuminates the mask M held on the mask stage 1 with the illumination light EL emitted from the light source unit ELSU. Specifically, by illuminating the mask M with the illumination light EL emitted from the light source unit ELSU via an optical integrator, a condenser lens, a variable field stop, etc., an illumination region IR that illuminates the mask M is defined, The illuminance distribution in the illumination area IR is made uniform. In the present embodiment, the illumination light EL emitted from the light source unit ELSU via the illumination optical system IL is ArF excimer laser light (wavelength 193 nm). In addition to this, the illumination light EL includes ultraviolet rays (g-line, h-line, i-line) emitted from a mercury lamp, far-ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), Alternatively, vacuum ultraviolet light (VUV light) such as F2 laser light (wavelength 157 nm) may be used.

  The mask stage 1 is driven by a mask stage driving device 6 composed of a linear motor, holds the mask M substantially parallel to the XY plane, can move two-dimensionally in the X-axis direction and the Y-axis direction, and rotates in the θZ direction. Is possible. The mask M is a mask or reticle on which a device pattern projected onto the substrate P is formed. The mask M includes a transmissive mask in which a predetermined pattern is formed on a transparent plate such as a glass substrate using a light shielding film such as chromium. A reflective mask can also be used as the mask M.

  A mask side laser interferometer 8 is installed at a position facing the movable mirror 7 provided on the mask stage 1. The mask-side laser interferometer 8 irradiates the movable mirror 7 with measurement light, and uses the measurement light via the movable mirror 7 to measure the position of the mask stage 1 on the XY plane and the rotation angle in the θZ direction in real time. To do.

  The projection optical system PL includes a plurality of optical elements (not shown), a terminal optical element 9 closest to the image plane of the projection optical system PL, and a plurality of optical elements (not shown) and a lens barrel that holds the terminal optical element 9. Including PK. The projection optical system PL irradiates the projection area AR1 with the pulsed light EL, and projects the pattern image of the mask M at a predetermined projection magnification onto at least a part of the substrate P arranged to enter the projection area AR1. To do. The projection magnification of the projection optical system PL is a reduction system such as 1/4, 1/5, or 1/8. The projection optical system PL may be either an equal magnification system or an enlargement system. The optical axis AX of the projection optical system PL is substantially parallel to the Z axis.

  The substrate stage 2 includes a substrate table 3 that can move while holding the substrate P, a stage main body 10 that supports the substrate table 3, and a base 11 that supports the stage main body 10. The substrate table 3 and the stage main body 10 are driven by the substrate stage driving device 15 configured by a linear motor.

  The stage body 10 can be moved in the X-axis, Y-axis, and θZ directions by the substrate stage driving device 15. That is, the position in the XY direction of the substrate P held on the substrate table 3 supported by the stage body 10 (the position in the direction substantially parallel to the image plane of the projection optical system PL) is controlled.

  The substrate table 3 can be moved in the Z-axis, θX, and θY directions with respect to the stage body 10 by the substrate stage driving device 15. That is, the substrate table 3 can be moved by the substrate stage driving device 15 in six directions of X axis, Y axis, Z axis, θX, θY, and θZ.

  Further, an auxiliary plate 13 that is held so as to cover the periphery of the substrate P, a holding portion (not shown) that can hold the substrate P and the auxiliary plate 13 by suction, and a movable mirror 14 that is provided on the substrate table 3 are provided. Is provided.

  The auxiliary plate 13 has an opening in which the substrate P can be arranged so that the liquid LQ can be held under the projection optical system PL by the auxiliary plate 13 when the vicinity of the periphery of the substrate P is exposed. It is provided around the substrate P. The surface of the auxiliary plate 13 has liquid repellency with respect to the liquid LQ. The auxiliary plate 14 is composed of a stainless steel base material and a film of a liquid repellent material formed on the base material. The base material may be a metal other than stainless steel, or glass or plastic other than metal. Further, the auxiliary plate 13 itself may be formed of a liquid repellent material. The contact angle of the surface of the auxiliary plate 13 with respect to the liquid LQ is, for example, 90 degrees or more.

  The substrate P is sucked and held by a holding portion (not shown) that can be sucked and held independently of the auxiliary plate 13. The substrate P includes a silicon wafer base material, a shot that is an exposure region formed on the base material by projection of illumination light EL, and a base material and a photosensitive film formed on the upper surface of the shot. . The surface of the substrate P has liquid repellency with respect to the liquid LQ. Further, the surface of the substrate P includes the surface of the photosensitive film. The photosensitive film has liquid repellency with respect to the liquid LQ. Further, the surface of the substrate P may be formed of a protective film that covers the photosensitive film. The protective film is a film called a top coat and protects the photosensitive film from the liquid LQ.

  In a state where the substrate P is sucked and held, the upper surface of the substrate P and the upper surface of the auxiliary plate 13 are substantially in the same plane (almost flush). The diameter of the opening of the auxiliary plate 13 (circular opening formed in the center of the base material) is larger than the diameter of the substrate P, and the outer edge of the upper surface of the substrate P and the inner edge of the upper surface of the auxiliary plate 13 A gap is formed between the two. The opening width of the gap is 0.1 mm to 1.0 mm so that the liquid LQ does not enter the gap due to the surface tension acting on the liquid LQ as the liquid immersion area AR2 is formed. The surface of P and the surface of the auxiliary plate 13 have liquid repellency with respect to the liquid LQ.

  Further, a substrate side laser interferometer 16 installed at a position facing the movable mirror 11 provided on the substrate table 3 is provided. The substrate table 3 and the stage main body 10 may be provided integrally. The substrate-side laser interferometer 14 irradiates the movable mirror 14 with measurement light, and uses the measurement light via the movable mirror 14 to measure the position of the substrate table 3 on the XY plane and the rotation angle in the θZ direction in real time. To do.

  The liquid supply mechanism 4 supplies a predetermined liquid LQ onto the substrate table 3 to form the liquid immersion area AR2, and supplies the liquid LQ to the liquid supply device 17 capable of delivering the liquid LQ. A supply nozzle 19 connected via a pipe 18 and having a supply port for supplying the liquid LQ delivered from the liquid supply device 17 onto the substrate P is provided. The supply nozzle 19 is disposed close to the surface of the substrate P.

  The liquid supply device 17 includes a tank for storing the liquid LQ, a pressure pump, and the like, and supplies the liquid LQ onto the substrate table 3 via the supply pipe 18 and the supply nozzle 19. Further, the liquid supply device 17 has a temperature adjustment mechanism for the liquid LQ, and supplies the liquid LQ on the substrate P at substantially the same temperature (for example, 23 ° C.) as the temperature in the chamber in which the liquid supply device 17 is accommodated. It is like that. Note that the tank or pressure pump for supplying the liquid LQ is not necessarily provided in the exposure apparatus EX, and facilities such as a factory in which the exposure apparatus EX is installed can be used.

  The liquid recovery mechanism 5 recovers the liquid LQ on the substrate table PT, and is connected to the recovery nozzle 20 disposed in the vicinity of the surface of the substrate P via the recovery pipe 21. And a liquid recovery device 22.

  The liquid recovery device 22 includes a vacuum system (suction device) such as a vacuum pump and a tank for storing the recovered liquid LQ, and recovers the liquid LQ on the substrate table 3 via the recovery nozzle 20 and the recovery pipe 21. To do. Note that the vacuum system and tank for collecting the liquid LQ are not necessarily provided in the exposure apparatus EX, and facilities such as a factory in which the exposure apparatus EX is installed can be used.

  Next, the configuration of the light source unit ELSU in the present embodiment will be described with reference to FIG.

  FIG. 2 is a plan view of the light source unit ELSU in the present embodiment.

  In the present embodiment, the light source unit ELSU includes a first light source ELS1 that pulsates the first illumination light EL1, a second light source ELS2 that pulsates the second illumination light EL2, and a first light emitted from the first light source ELS1. A mirror 23 that bends the path of the illumination light EL1 and a light combiner 56 that combines the second illumination light EL2 emitted from the second light source ELS2 and the first illumination light EL1 are provided.

  The first light source ELS1 pulsates the first illumination light EL1 having the wavelength λ1 at a predetermined cycle. In the present embodiment, the first light source ELS1 includes the first resonator 25 that generates the first illumination light EL1, the first wavelength setting device 24 that sets the wavelength λ1 of the oscillating first illumination light EL1, and the first light source ELS1. And a first control unit CONT1 that supervises the operation of the single light source ELS1.

  In the present embodiment, the first illumination light EL1 is an ArF excimer laser, and the first resonator 25 generates the first illumination light EL1 by exciting argon gas and fluorine gas.

  As disclosed in JP-A-11-248913, the first wavelength setting device 24 includes a prism (not shown) that divides the first illumination light EL1 into a plurality of wavelengths, and a light beam having a predetermined wavelength that is divided by the prism. And a rotatable diffraction grating (not shown) that reflects and narrows the band, and sets the wavelength λ1 of the first illumination light EL1 to a desired wavelength.

  Note that the first wavelength setting device 24 may not have the above configuration as long as the wavelength λ1 of the first illumination light EL1 can be set. For example, as disclosed in Japanese Patent Application Laid-Open Nos. 7-263737 and 3-157717, a reflection mirror and an etalon may be provided.

  The first controller CONT1 receives the first wavelength signal 27, which is a signal for setting the wavelength λ1 of the first illumination light EL1 to a predetermined wavelength, from the main controller CONT, and controls the first wavelength setting device 24 to control the first wavelength signal 27. A wavelength λ1 of one illumination light EL1 is set. In addition, the first trigger pulse 28 that is a signal that defines the timing for oscillating the first illumination light EL1 from the first light source ELS1 is received from the main control unit CONT, and the first resonator 25 is controlled to control the first illumination light EL1. Oscillates.

  On the other hand, the second light source ELS2 pulsates the second illumination light EL2 having the wavelength λ2 with a predetermined period. The configuration of the second light source ELS2 is the same as the configuration of the first light source ELS1, and the second resonator 30 that generates the second illumination light EL2 and the second wavelength that sets the wavelength λ2 of the oscillating second illumination light EL2. A setting device 29 and a second control device CONT2 that controls the operation of the second light source ELS2 are provided.

  In the present embodiment, the period at which the first light source ELS1 oscillates the first illumination light EL1 and the period at which the second light source ELS2 oscillates the second illumination light EL2 are substantially the same.

  Similarly to the first control device CONT1, the second control device CONT2 receives the second wavelength signal 32, which is a signal for setting the wavelength λ2 of the second illumination light EL2 to a predetermined wavelength, from the main control device CONT. The wavelength setting device 29 is controlled to set the wavelength λ2 of the second illumination light EL2. Further, the second trigger pulse 33, which is a signal that defines the timing for oscillating the second illumination light EL2 from the second light source ELS2, is received from the main controller CONT, and the second resonator 30 is controlled to control the second illumination light EL2. Oscillates.

  The reflection mirror 23 bends the path of the first illumination light EL1 emitted from the first light source ELS2 by 90 degrees.

  The light combiner 56 is a half mirror that combines the first illumination light EL1 whose path is bent 90 degrees by the reflection mirror 2 and the second illumination light EL2 emitted from the second light source ELS2. The light combiner 56 may not be a half mirror as long as the first illumination light EL1 and the second illumination light EL2 can be combined. For example, the light combiner 56 previously polarized the first illumination light EL1 and the second illumination light EL2. It is also possible to use a polarization coupler to be synthesized.

  The main controller CONT transmits the first wavelength signal 27 and the first trigger pulse 28 to the first controller CONT1, and transmits the second wavelength signal 32 and the second trigger pulse 33 to the second controller CONT2.

  At this time, the main controller CONT shifts the timing for transmitting the first trigger pulse 28 to the first controller CONT1 and the timing for transmitting the second trigger pulse 33 to the second controller CONT2. Specifically, the main controller CONT transmits the first trigger pulse 28 to the first controller CONT1, delays it for a predetermined time, and then transmits the second trigger pulse 33 to the second controller CONT2. In the present embodiment, the time for delaying the transmission of the second trigger pulse 33 with respect to the first trigger pulse 28 is set between 130 ns and 1000 ns.

  In addition, the main control device CONT sends the first wavelength signal 27 and the second wavelength signal 32 to the first control device CONT1 and the second wavelength light 32 so that the first illumination light EL1 and the second illumination light EL2 have different wavelengths. It transmits to the 2nd control apparatus CONT2. In the present embodiment, the wavelength λ1 of the first illumination light EL1 and the wavelength λ2 of the second illumination light EL2 are set within the reference wavelength ± 80 fm. Here, the reference wavelength is 193 nm in the case of ArF excimer laser.

  That is, in the exposure apparatus EX of the present embodiment, the first light source ELS1 and the second light source ELS2 respectively receive the first wavelength signal 27 and the second wavelength signal 32 transmitted from the main controller CONT, and the first illumination. The light EL1 and the second illumination light EL2 are set to two different wavelengths, and the first trigger pulse 28 and the second trigger pulse 33 transmitted from the main controller CONT while being shifted by a predetermined time are respectively sent to the first light source ELS1. And the second light source ELS2, the timing at which the first illumination light EL1 and the second illumination light EL2 having different wavelengths included in the combined illumination light EL are incident on the mask M is shifted. The pattern image of the mask M can be projected onto the substrate P by illuminating.

  As described above, by setting the first illumination light EL1 and the second illumination light EL2 to different wavelengths, two imaging points corresponding to the respective wavelengths are generated on the substrate P. The contrast change of the image is reduced, and the depth of focus of the projection optical system PL can be increased. In addition, by shifting the timing of incidence of the first illumination light EL1 and the second illumination light EL2 on the mask M by a predetermined time, the spatial coherence of the synthesized illumination light EL is reduced, and the illumination light EL on the mask M is reduced. Unevenness in the illuminance distribution can be suppressed.

  Therefore, unevenness of the illuminance distribution of the illumination light EL that illuminates the mask M is suppressed while increasing the depth of focus, and deterioration of the line width accuracy of the exposure pattern can be suppressed.

  Next, the flow of exposure processing of the substrate P by the exposure apparatus EX from the determination of the exposure parameters will be described with reference to FIG.

  Here, as an example, regarding the shifting of the timing at which the first illumination light EL1 and the second illumination light EL2 are incident on the mask M, the second illumination light EL2 is given a predetermined time (hereinafter, referred to as the first illumination light EL1). A description will be given of making the light incident on the mask M with a delay.

  First, from the design pattern to be transferred to the substrate P, a mathematical model or simulation is used to optimize the mask pattern formed on the mask M, the light source distribution on the pupil plane of the projection optical system PL, and the like. In addition, the exposure parameters, the focus (depth of focus), the reference wavelength of the illumination light EL, the two wavelengths λ1 and λ2, the delay time, and the like are shaken for each shot, and initial parameters are created (step 101). At this time, a plurality of initial parameters are created by changing the above values.

  The two wavelengths λ1 and λ2 are each assigned a plurality of wavelengths to a plurality of initial parameters. In this embodiment, the change wavelength width of the first light source ELS1 and the second light source ELS2 is ± 80 fm from the reference wavelength, and a plurality of two wavelengths λ1 and λ2 are selected from the wavelength widths and assigned to a plurality of initial parameters. It is.

  At this time, the lower limit of the delay time is the pulse width of the first illumination light EL1 and the second illumination light EL2. The upper limit of the delay time is the longest time for which the delayed first illumination light EL1 and second illumination light EL2 are recognized as one pulse by the integrator sensor (not shown) of the illumination optical system IL. A plurality of times are allocated to a plurality of initial parameters from the upper and lower time ranges. For example, in the present embodiment, the pulse widths of the first illumination light EL1 and the second illumination light EL2 are both 130 nsec, and the longest time during which the first illumination light EL1 and the second illumination light EL2 can respond as one pulse. Since the delay time is 1000 nsec, a plurality of times are selected from a time width of 130 nsec to 1000 nsec and assigned to a plurality of initial parameters.

  Next, a plurality of initial parameters created in step 101 are stored in the main control unit CONT provided in the above-described exposure apparatus EX, and the test substrate is subjected to test exposure by the exposure apparatus EX for each initial parameter, and then development, resist registration Film formation and exposure are repeated, and a pattern of the mask M is formed on the test substrate (step 102).

  Subsequently, the finished dimension of the pattern formed on the test substrate is measured by a semiconductor inspection apparatus (not shown) (step 103), and the designed dimension, which is the dimension of the ideal design pattern designed in advance, is compared with the finished dimension. It is determined whether there is an initial parameter that satisfies the specifications of the formed pattern among the plurality of initial parameters created in step 101 (step 104). Here, in this embodiment, the specification is the design dimension of the pattern ± 0.5%.

  If it is determined in step 104 that there are no initial parameters whose pattern finish dimensions satisfy the specifications, parameters such as the two wavelengths λ1 and λ2 and the delay time are reassigned, the initial parameters created in step 101 are corrected, and the test is performed again. Exposure is performed and the pattern formed on the test substrate is measured.

  On the other hand, when it is determined in step 104 that there is an initial parameter whose pattern finish dimension satisfies the specification, an initial parameter whose pattern finish dimension is closest to the design dimension is determined as an exposure parameter based on the measurement result in step 103. And stored in the control unit CONT of the exposure apparatus EX (step 105).

  Next, the mask M is loaded (sucked and held) on the mask stage 1 by driving a transfer device including a robot arm (not shown) (step 106).

  Subsequently, the substrate P is loaded (adsorbed and held) on the substrate table 3 by driving a transfer device including a robot arm (not shown) (step 107).

  Subsequently, the liquid immersion area AR2 is formed. In the liquid immersion area AR2, the liquid supply operation onto the substrate table 3 is started by driving the liquid supply mechanism 4, and the liquid recovery operation from above the substrate table 3 is started by driving the liquid recovery mechanism 5. Thus, the projection optical system PL and the substrate table 3 are formed (step 108). At this time, the liquid supply amount per unit time onto the substrate table 3 by the liquid supply device 17 is controlled, and the liquid recovery amount per unit time by the liquid recovery device 22 is controlled.

  Next, based on the exposure parameters stored in the main controller CONT, the two wavelengths λ1 and λ2 are set in the first light source ELS1 and the second light source ELS2, respectively (step 109). More specifically, the first wavelength signal 27 and the second wavelength signal 32 transmitted from the main controller CONT based on the exposure parameters are received by the first controller CONT1 and the second controller CONT2, respectively, and the first wavelength By driving the setting device 24 and the second wavelength setting device 29, the two wavelengths λ1 and λ2 are set by the first light source ELS1 and the second light source ELS2, respectively.

  In the present embodiment, the two wavelengths λ1 and λ2 for exposing an arbitrary shot are determined by the first wavelength setting device 24 and the second wavelength setting device 29 between the exposure of the arbitrary shot and the exposure of the previous shot. Is set.

  In this step, parameters of the configuration other than the first light source ELS1 and the second light source ELS2 are also set based on the exposure parameters in the exposure apparatus EX.

  Then, a shot of the substrate P is exposed by the illumination light EL obtained by synthesizing the first illumination light EL1 having the wavelength λ1 and the second illumination light EL2 having the wavelength λ2 emitted with a predetermined delay time based on the exposure parameter ( Step 110).

  More specifically, the first trigger pulse 28 and the second trigger pulse 33 are transmitted from the main control device CONT to the first control device CONT1 of the first light source ELS1 and the second control device CONT2 of the second light source ELS2, respectively. . At this time, the second trigger pulse 33 is transmitted delayed by the delay time determined in step 105 with respect to the first trigger pulse 28, and the second illumination light EL2 is delayed by the delay time with respect to the first illumination light EL1, Oscillates with a delay.

  Next, it is determined whether or not all shots of the substrate P have been exposed by the shot exposure in step 110 (step 111).

  If all the shots are not exposed in step 111, the process returns to step 109, where the two wavelengths λ1 and λ2 for exposing the next shot and other apparatus parameters of the exposure apparatus EX are set based on the exposure parameters, and the next shot Are exposed.

  On the other hand, if all the shots are exposed in step 111, the lot is completed and it is determined whether or not the mask M is to be replaced (step 112). It is loaded (adsorbed and held) by driving (shown).

  When the lot is completed and the mask M is changed in step 112, the exposure is repeated after a new mask M is loaded (sucked and held) by driving a robot arm (not shown).

  As described above, the first pulsed light Pa1 (first illumination light EL1) and the second pulsed light Pa2 (second illumination light EL2) are set to the two different wavelengths λ1 and λ2, and the second light with respect to the first illumination light EL1. The illumination light EL2 is delayed to shift the incident timing of the first illumination light EL1 and the second illumination light EL2 on the mask M, thereby illuminating the mask M while the depth of focus of the projection optical system PL is expanded. Since unevenness of the illuminance distribution of the illumination light EL is suppressed, it is possible to suppress the deterioration of the line width accuracy of the exposure pattern.

  In step 101, the change wavelength width of the first light source ELS1 and the second light source ELS2 is ± 80 fm from the reference wavelength, and a plurality of two wavelengths λ1 and λ2 are selected from the wavelength width. The changed wavelength width may be expanded by remodeling or changing.

  In step 101, the delay time is set to a time width of 130 nsec to 1000 nsec, but the pulse width of the first illumination light EL1 and the second illumination light EL2 may not be 130 nsec at the lower limit, and the illumination optical power at the upper limit. It may be set to 1000 nsec or more by modifying or changing the integrator sensor of the system IL. Further, the pulse widths of the first illumination light EL1 and the second illumination light EL2 may not be equal.

  In step 104, the specification may not be the design dimension ± 0.5%. For example, the specifications may be changed based on the pattern layout and the device to be manufactured.

  In step 105, the two wavelengths λ1, λ2 and the delay time are determined as exposure parameters for each shot, but may not be determined for each shot, for example, for each substrate or lot. .

  In step 105, when the initial parameter whose pattern finish dimension is closest to the design dimension is determined as the exposure parameter, the exposure parameter may be determined by creating a Bossung curve. Here, the Bossung curve is a curve in which the horizontal axis is the focus amount and the vertical axis is the finished dimension of the pattern for an arbitrary exposure amount. In this case, a Bossung curve is created using the result of the test exposure with the initial parameters determined in step 104 that the finished dimensions of the pattern satisfy the specifications. Then, even if the focus amount is changed based on this Bossung curve, the parameter with the smallest change in the finished dimension of the pattern is determined as the exposure parameter.

  In step 110, the second trigger pulse Pa2 is transmitted from the main controller CONT to the second controller CONT2 of the second light source ELS2 after being delayed by a delay time with respect to the first trigger pulse Pa1. The timing at which the device CONT2 receives the second trigger pulse Pa2 may be delayed by a delay time. In this case, the first trigger pulse Pa1 and the second trigger pulse Pa2 are transmitted from the main controller CONT at substantially the same timing.

Second Embodiment
Next, a second embodiment of the present invention will be described.

  In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  Hereinafter, the configuration of the exposure apparatus EX of the present embodiment will be described with reference to FIG.

  FIG. 4 is a schematic configuration diagram showing the light source unit ELSU in the present embodiment.

  The light source unit ELSU of the present embodiment branches the first wavelength signal 27 transmitted from the main controller CONT into two signals, and converts one of the first wavelength signals 27 into the second wavelength signal 32. A two-wavelength branching device 34 for generating a first wavelength signal 27 and a second wavelength signal 32, and a first trigger pulse 28 transmitted from the main control device CONT is branched into two trigger pulses, and one first trigger A delay branching device 35 that generates the first trigger pulse 28 and the second trigger pulse 33 by delaying the pulse 28 by a desired delay time to form the second trigger pulse 33 is provided.

  Next, detailed configurations of the two-wavelength branching device 34 and the delay branching device 35 will be described with reference to FIG.

  FIG. 5 is a schematic configuration diagram of the two-wavelength branching device 34 and the delay branching device 35 in the present embodiment.

  As shown in FIG. 5 (a), the two-wavelength branching device 34 includes a branch circuit 36 that branches the first wavelength signal 27 (digital signal) transmitted from the main control device CONT into two first wavelength signals 27; One of the branched two first wavelength signals 27 and a shift wavelength signal 37 (digital signal) which is a signal transmitted from the main controller CONT and which converts the first wavelength signal 27 into the second wavelength signal 32. And an adder 38 for generating the second wavelength signal 32. The first wavelength signal 27 and the second wavelength signal 32 generated by the two-wavelength branching device 34 are received by the first control device CONT1 and the second control device CONT2, respectively, similarly to the exposure apparatus EX of the first embodiment. The wavelengths of the first pulsed light Pa1 (first illumination light EL1) and the second pulsed light Pa2 (second illumination light EL2) are set.

  The branch circuit 36 is a signal branch circuit that branches a digital signal into two digital signals.

  The adder 38 is a logical operation element that logically adds digital signals to each other.

  The adder 38 is not limited to an element that adds digital signals. For example, in addition to a subtracter that subtracts digital signals, a logical operation element such as a multiplier or a divider may be used.

  In addition, as shown in FIG. 5B, the delay branching device 35 photoelectrically converts the first trigger pulse 28 (optical signal) transmitted from the main control device CONT into the first trigger signal 42 (electric signal). 1 photoelectric conversion element 44, a branch circuit 40 for branching the first trigger signal 42 into two first trigger signals 42, and a signal transmitted from the main control device CONT, the first trigger signal 42 being a desired delay A delay count 39 that is delayed by time is received, and after counting the delay count, one signal of the two first trigger signals 42 is passed to delay the other signal by a desired delay time. A counter 41 that generates a trigger signal 43, a second photoelectric conversion element 46 that converts the other signal (electric signal) into first trigger pulse light 28 (optical signal), and a second trigger signal (electric signal) 2 And a third photoelectric conversion element 45 for converting to a trigger pulse (optical signal).

  The first trigger pulse 28 and the second trigger pulse 33 generated by the delay branching device 35 are received by the first control device CONT1 and the second control device CONT2, respectively, like the exposure apparatus EX of the first embodiment. One illumination light EL1 and second illumination light EL2 are emitted.

  The branch circuit 40 is a signal branch circuit that branches a digital signal into two digital signals.

  The counter 41 is a down counter that starts down-counting in response to reception of the delay count 39 and passes the second trigger signal to the second photoelectric conversion element when it reaches zero.

  The counter 41 may not be a down counter. For example, it may be an up counter that counts up according to the delay count.

  In the present embodiment, the second illumination light EL2 is delayed with respect to the first illumination light EL1, but the first illumination light EL1 may be delayed with respect to the second illumination light EL2.

  Next, differences in the basic operation of the exposure apparatus EX of the present embodiment from the above-described embodiments will be described with reference to FIG.

  After the immersion area AR2 is formed in step 108, in the present embodiment, the first wavelength signal 27 is shifted from the main controller CONT to the two-wavelength branching device 34 based on the exposure parameters determined in step 105. A wavelength signal 37 is transmitted, a second wavelength signal 32 is generated in the two-wavelength branching device 34, and is received by the first control device CONT1 and the second control device CONT2 together with the branched first wavelength signal 27. Then, by driving the first wavelength setting device 24 and the second wavelength setting device 29 by these signals, the two wavelengths λ1 and λ2 are set by the first light source ELS1 and the second light source ELS2, respectively (step 109). ).

  Subsequently, based on the exposure parameters, the first trigger pulse 28 and the delay count 39 are transmitted from the main controller CONT to the delay branch device 35, and the second trigger pulse 33 is generated in the delay branch device 35, and the branch is performed. The first illumination light EL1 having the wavelength λ1 and the second illumination light EL2 having the wavelength λ2, which are received by the first control device CONT1 and the second control device CONT2 together with the first trigger pulse 28 and emitted with a desired delay time. Thus, a shot of the substrate P is exposed (step 110).

  As described above, in the exposure apparatus EX of the present embodiment described above, for example, in the case of an exposure apparatus that exposes a substrate using one type of wavelength at present, the first wavelength signal 27 transmitted from the main control unit CONT is split into two wavelengths. Since the second wavelength signal 32 is generated by the device 34, it is possible to easily generate two wavelength signals by simply attaching the two-wavelength branching device 34 to the control device CONT without increasing the number of signal lines of the same system. It becomes possible.

  Further, without providing the main controller CONT with a configuration for delaying the second trigger pulse 33 with respect to the first trigger pulse 28, it is possible to simply perform delayed oscillation only by externally attaching the delay branch device 35. That is, even if the exposure apparatus that performs exposure with illumination light of one wavelength is changed to a configuration that oscillates by delaying illumination light of different wavelengths, the modification of the main controller CONT can be easily changed with minimal modification. Is possible.

<Third Embodiment>
Next, a third embodiment of the present invention will be described.

  In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  Hereinafter, the configuration of the exposure apparatus EX of the present embodiment will be described with reference to FIGS.

  FIG. 6 is a schematic configuration diagram illustrating an example of the light source unit ELSU in the present embodiment.

  FIG. 7 is a schematic configuration diagram of the delay optical system 47 in the present embodiment.

  As shown in FIG. 6, the difference between the exposure apparatus EX of the second embodiment described above and the present embodiment is that the light source unit ELSU is a delay unit that delays the second illumination light EL2 with respect to the first illumination light EL1. The delay optical system 47 is provided on the optical path of the two illumination light EL2.

  As shown in FIG. 7, the delay optical system 47 of this embodiment includes an entrance window 48, four mirrors 49 to 52, four prisms 51 to 54, and an exit window 55.

  The second illumination light EL2 emitted from the second light source ELS2 is bent 90 degrees by the mirror 49 through the incident window 48, adjusted in the optical path by the prisms 51 and 52, and bent by 180 degrees through the mirrors 50 and 51. The optical path is adjusted again at 53 and 54, bent 90 degrees by the mirror 52, and proceeds from the exit window 55 to the laser coupler 24. That is, when the second illumination light EL2 enters the delay optical system 47, the optical path of the second illumination light EL2 can be extended, and the second illumination light EL2 can be delayed with respect to the first illumination light EL1. it can.

  The delay time of the second illumination light EL2 with respect to the first illumination light EL1 is adjusted by rotating the four mirrors 49 to 52 and the four prisms 51 to 54 on the XY plane by a drive mechanism (not shown). This is done by adjusting the length of the optical path of the second illumination light EL2 with respect to the first illumination light EL1.

  The number of mirrors and prisms does not have to be four, and their arrangement is not limited to FIG. For example, the length of the optical path to be extended may be estimated according to the set delay time, and the number and arrangement of mirrors and prisms may be determined based on the length of the optical path.

  The delay optical system 47 may not use a mirror and a prism as long as the second pulse light Pa2 can be delayed by a desired delay time with respect to the first pulse light Pa1. For example, the delay optical system 47 may include an optical glass having a predetermined length installed on the optical path of the second illumination light EL2, and the second illumination light EL2 may be delayed by being transmitted through the optical glass. Further, the optical glass may not be glass as long as it is a material that transmits light, and may be plastic. The delay optical system 47 may be a combination of optical glass, a mirror, and a prism.

  In the present embodiment, the second illumination light EL2 is delayed with respect to the first illumination light EL1, but the first illumination light EL1 may be delayed with respect to the second illumination light EL2. In this case, the delay optical system 47 is installed on the optical path of the first illumination light EL1.

  Next, differences in the basic operation of the exposure apparatus EX of the present embodiment from the above-described embodiments will be described with reference to FIG.

  In step 109, after the two wavelengths λ1 and λ2 for exposing the shot are set by the first light source ELS1 and the second light source ELS2, respectively, based on the determined exposure parameter, in the present embodiment, based on the exposure parameter. The mirrors 49 to 52 and the prisms 51 to 54 of the delay optical system 47 are driven by the main controller CONT so that the delay time of the second illumination light EL2 with respect to the first illumination light EL1 becomes a desired delay time, and the second The optical path of the illumination light EL2 is adjusted to a desired length. Then, the first illumination light EL1 having the wavelength λ1 and the second illumination light EL2 having the wavelength λ2 emitted with a desired delay time are combined, and the shot of the substrate P is exposed by the illumination light EL (step 110).

  As described above, in the exposure apparatus EX of the present embodiment described above, the delay illumination system 47 is used to optically delay the second illumination light EL2 with respect to the first illumination light EL1, thereby increasing the exposure light based on the exposure parameter. It becomes possible to set the delay time to accuracy.

  In the above-described embodiment, the first illumination light EL1 and the second illumination light EL2 are emitted from the two light sources (the first light source ELS1 and the second light source ELS2), but the light emitted from one light source is emitted. The first illumination light EL1 and the second illumination light EL2 may be separated into two light beams. In this case, for separation into two light beams, for example, the emitted light beam may be separated through two half mirrors, or a combination of a polarization modulation element and a polarization beam splitter, and the emitted light beam is p-polarized. And s-polarized light.

  The two wavelengths λ1 and λ2 are set by installing a wavelength setting mechanism on each optical path of the first illumination light EL1 and the second illumination light EL2. The wavelength setting mechanism is, for example, a rotatable etalon. At this time, for example, a delay optical system (see FIG. 7) is installed on the optical path of the second illumination light EL2, and the second illumination light EL2 with respect to the first illumination light EL1 is delayed by a predetermined time.

  In each of the above-described embodiments, the projection optical system PL fills the optical path space on the exit side (image plane side) of the last optical element 10 with the liquid LQ, but this is disclosed in US Pat. No. 7,362,508. As described above, a projection optical system in which the optical path space on the incident side (object plane side) of the last optical element 9 is also filled with the liquid LQ can be employed. Further, the present invention can also be applied to an immersion exposure apparatus in which the entire surface of the substrate P to be exposed is covered with the liquid LQ.

  In addition, although the liquid LQ of the above-mentioned embodiment is water, liquids other than water may be sufficient. The liquid LQ is preferably a liquid LQ that is transparent to the illumination light EL, has a refractive index as high as possible, and is stable with respect to the projection optical system or a photosensitive material (photoresist) film that forms the surface of the substrate. For example, as the liquid LQ, hydrofluoroether (HFE), perfluorinated polyether (PFPE), fomblin oil, cedar oil, or the like can be used. A liquid LQ having a refractive index of about 1.6 to 1.8 may be used. Furthermore, an optical element (such as a terminal optical element) of the projection optical system PL that is in contact with the liquid LQ may be formed of a material having a refractive index higher than that of quartz and fluorite (for example, 1.6 or more). In addition, various fluids such as a supercritical fluid can be used as the liquid LQ.

  As the substrate P in each of the above embodiments, not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type immersion scanner that scans and exposes the pattern of the mask M through the liquid LQ by moving the mask M and the substrate P synchronously, The present invention can also be applied to a step-and-repeat type immersion stepper in which the pattern of the mask M is collectively exposed via the liquid LQ while the substrate P is stationary, and the substrate P is sequentially moved stepwise. In each of the above-described embodiments, the exposure apparatus EX can be applied to a scanner and a stepper that expose the pattern of the mask M onto the substrate P without using the liquid LQ.

  In the step-and-repeat exposure, after the reduced image of the first pattern is transferred onto the substrate P using the projection optical system with the first pattern and the substrate P substantially stationary, the second pattern With the projection optical system, the reduced image of the second pattern may be partially overlapped with the first pattern and collectively exposed on the substrate P (stitch type batch exposure apparatus). ). Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the substrate P, and the substrate P is sequentially moved.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, a pattern of two masks is synthesized on a substrate via a projection optical system, and one shot on the substrate is obtained by one scanning exposure. The present invention can also be applied to an exposure apparatus that performs double exposure of a region almost simultaneously. The present invention can also be applied to a proximity type exposure apparatus, mirror projection aligner, and the like.

  Further, the present invention relates to US Pat. No. 6,400,441, WO 98/28665, US Pat. No. 6,341,007, US Pat. No. 6,400,441, US Pat. No. 6,549,269, And a twin-stage type exposure apparatus having a plurality of substrate stages as disclosed in US Pat. No. 6,590,634, US Pat. No. 6,208,407, US Pat. No. 6,262,796, etc. Applicable.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P. An exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an imaging element (CCD), micromachine, MEMS, DNA chip, or an exposure apparatus for manufacturing a reticle or mask can be widely applied.

  In each of the above-described embodiments, each position of the mask stage 1 and the substrate table 3 is measured using the mask-side laser interferometer 8 and the substrate-side laser interferometer 16, but the present invention is not limited to this. An encoder system that detects a scale (diffraction grating) provided on the mask stage 1 and the substrate table 3 may be used. In this case, a hybrid system including at least one of the mask-side laser interferometer 8 and the substrate-side laser interferometer 16 and the encoder system is used, and at least one of the mask-side laser interferometer 8 and the substrate-side laser interferometer 16 is used. It is preferable to calibrate the measurement result of the encoder system using one measurement result. The stage position may be controlled by switching between at least one of the mask-side laser interferometer 8 and the substrate-side laser interferometer 16 and the encoder system or using both.

  In each of the above-described embodiments, an ArF excimer laser is used as a light source device that generates ArF excimer laser light as illumination light EL. For example, as disclosed in US Pat. No. 7,023,610. In addition, a harmonic generation apparatus that includes a solid-state laser light source such as a DFB semiconductor laser or a fiber laser, an optical amplification unit having a fiber amplifier, a wavelength conversion unit, and the like and outputs pulsed light with a wavelength of 193 nm may be used. Furthermore, in the above-described embodiment, each illumination area and the projection area described above are rectangular, but other shapes such as an arc shape may be used.

  In each of the above-described embodiments, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in Japanese Patent No. 6,778,257, a variable shaping mask (an electronic mask, an active mask, or an image) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. (Also called a generator) may be used. The variable shaping mask includes, for example, a DMD (Digital Micro-mirror Device) which is a kind of non-light emitting image display element (spatial light modulator). The variable shaping mask is not limited to DMD, and a non-light emitting image display element described below may be used instead of DMD. Here, the non-light-emitting image display element is an element that spatially modulates the amplitude (intensity), phase, or polarization state of light traveling in a predetermined direction, and a transmissive liquid crystal modulator is a transmissive liquid crystal modulator. An electrochromic display (ECD) etc. are mentioned as an example other than a display element (LCD: Liquid Crystal Display). In addition to the DMD described above, the reflective spatial light modulator includes a reflective mirror array, a reflective liquid crystal display element, an electrophoretic display (EPD), electronic paper (or electronic ink), and a light diffraction type. An example is a light valve (Grating Light Valve).

  Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element. In this case, an illumination system is unnecessary. Here, as a self-luminous image display element, for example, CRT (Cathode Ray Tube), inorganic EL display, organic EL display (OLED: Organic Light Emitting Diode), LED display, LD display, field emission display (FED: Field Emission) Display), plasma display (PDP: Plasma Display Panel), and the like. In addition, as a self-luminous image display element included in the pattern forming apparatus, a solid light source chip having a plurality of light emitting points, a solid light source chip array in which a plurality of chips are arranged in an array, or a plurality of light emitting points on a single substrate A built-in type or the like may be used to form a pattern by electrically controlling the solid-state light source chip. The solid light source element may be inorganic or organic.

  For example, as disclosed in International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line-and-space pattern on a substrate P by forming interference fringes on the substrate P. The present invention can also be applied.

  As described above, the exposure apparatus EX according to the embodiment of the present application maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 8, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for manufacturing a mask (reticle) based on the design step, and a substrate which is a base material of the device. Substrate processing step 204 including substrate processing (exposure processing) including exposing the substrate with exposure light using a mask pattern and developing the exposed substrate according to the above-described embodiment. The device is manufactured through a device assembly step (including processing processes such as a dicing process, a bonding process, and a package process) 205, an inspection step 206, and the like.

  Note that the requirements of the above-described embodiments can be combined as appropriate. Some components may not be used. In addition, as long as it is permitted by law, all of the publications such as the exposure apparatus cited in each of the above-described embodiments and the disclosure of US patents are incorporated as part of the description of the text.

  EX: exposure device, EL1: first illumination light, EL2: second illumination light, EL: illumination light, ELSU: light source unit, ELS1: first light source, ELS2: second light source, CONT1: first control device, CONT2: Second controller, CONT: main controller, 24: first wavelength setting device, 29: second wavelength setting device, 28: first trigger pulse, 33: second trigger pulse

Claims (11)

In an exposure apparatus that transfers a mask pattern onto a substrate,
Irradiating the mask with first illumination light having a first wavelength and pulsed oscillation and second illumination light having a second wavelength different from the first wavelength and pulsed oscillation With an irradiation unit,
The irradiation unit may be configured such that the timing at which the first illumination light is applied to the mask and the timing at which the second illumination light is applied to the mask are shifted from each other by a predetermined time. An exposure apparatus comprising: a delay setting unit that sets a timing of irradiation with illumination light. The exposure apparatus according to claim 1, wherein
The delay setting unit includes the first illumination light and the second illumination light so that a timing at which the first illumination light is pulsed and a timing at which the second illumination light is pulsed are shifted by the predetermined time. An exposure apparatus characterized in that the timing of pulse oscillation is set. The exposure apparatus according to claim 2, wherein
The delay setting unit generates a first trigger that is a signal that defines a timing for oscillating the first pulsed light, and a second trigger that is a signal that defines a timing for oscillating the second pulsed light, The timing for transmitting the first trigger to the first light source that oscillates the first illumination light and the timing for transmitting the second trigger to the second light source that oscillates the second illumination light are shifted by the predetermined time. An exposure apparatus. The exposure apparatus according to claim 3, wherein
The delay setting unit includes:
A trigger generator for generating the first trigger;
A trigger branching section for branching the first trigger into two first triggers;
A trigger delay unit that delays one of the branched first triggers by the predetermined time to serve as the second trigger;
A trigger transmitter for transmitting the first trigger and the second trigger to the first light source and the second light source, respectively;
An exposure apparatus comprising: In the exposure apparatus according to any one of claims 1 to 4,
The delay setting unit includes an optical system that is provided in at least an optical path of the second illumination light among the first illumination light and the second illumination light and extends a length of the optical path of the second illumination light. An exposure apparatus characterized by the above. In an exposure method for transferring a mask pattern to a substrate,
Setting the wavelength of the first illuminating light pulsed to the first wavelength;
Setting the wavelength of the second illuminating light pulse-oscillated to a second wavelength different from the first wavelength;
Shifting the timing at which the first illumination light is applied to the mask and the timing at which the second illumination light is applied to the mask by a predetermined time;
Illuminating the mask with the first illumination light and the second illumination light, and transferring the pattern to the substrate;
An exposure method comprising: The exposure method according to claim 6, wherein
The exposure method is characterized in that shifting the timing shifts the timing at which the first illumination light is pulsed and the timing at which the second illumination light is pulsed for a predetermined time. The exposure method according to claim 7, wherein
Shifting the timing by a predetermined time
Generating a first trigger that is a signal that defines a timing for oscillating the first illumination light;
Generating a second trigger that is a signal that defines a timing for oscillating the second illumination light;
The timing for transmitting the first trigger to the first light source that oscillates the first illumination light and the timing for transmitting the second trigger to the second light source that oscillates the second illumination light are shifted by the predetermined time. And
An exposure method comprising: The exposure method according to claim 8.
Shifting the timing by a predetermined time
Generating a first trigger that is a signal that defines a timing for oscillating the first illumination light;
Branching the generated first trigger into two first triggers;
Delaying one of the branched first triggers by the predetermined time with respect to the other first trigger and setting the second trigger as a timing for oscillating the second pulse;
Transmitting the first trigger to a first light source that oscillates the first illumination light;
Transmitting the second trigger to a second light source that oscillates the second illumination light;
An exposure method comprising: In the exposure method according to any one of claims 6 to 9,
Shifting the timing by a predetermined time includes extending at least the length of the optical path of the second illumination light of the first illumination light and the second illumination light. Transferring the pattern of the mask onto the substrate using the exposure method according to any one of claims 6 to 10;
Developing the substrate;
A device manufacturing method comprising:

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