JPS649900A - Jig for heat-treating semiconductor wafer - Google Patents
Jig for heat-treating semiconductor waferInfo
- Publication number
- JPS649900A JPS649900A JP16489587A JP16489587A JPS649900A JP S649900 A JPS649900 A JP S649900A JP 16489587 A JP16489587 A JP 16489587A JP 16489587 A JP16489587 A JP 16489587A JP S649900 A JPS649900 A JP S649900A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- jig
- heat
- semiconductor wafer
- contents
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002296 pyrolytic carbon Substances 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 239000003575 carbonaceous material Substances 0.000 abstract 1
- 238000005336 cracking Methods 0.000 abstract 1
- 239000007770 graphite material Substances 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 238000005382 thermal cycling Methods 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16489587A JPS649900A (en) | 1987-06-30 | 1987-06-30 | Jig for heat-treating semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16489587A JPS649900A (en) | 1987-06-30 | 1987-06-30 | Jig for heat-treating semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS649900A true JPS649900A (en) | 1989-01-13 |
| JPH0471880B2 JPH0471880B2 (enrdf_load_html_response) | 1992-11-16 |
Family
ID=15801908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16489587A Granted JPS649900A (en) | 1987-06-30 | 1987-06-30 | Jig for heat-treating semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649900A (enrdf_load_html_response) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277934A (en) * | 1990-06-27 | 1994-01-11 | Advanced Ceramico Corporation | Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon |
| JP2005133133A (ja) * | 2003-10-29 | 2005-05-26 | Toyobo Co Ltd | 真空薄膜形成装置用防着板 |
| EP1804284A4 (en) * | 2004-10-19 | 2008-03-05 | Canon Anelva Corp | SUBSTRATE HEAT TREATMENT DEVICE AND SUBSTRATE TRANSFER LOAD USED IN SUBSTRATE HEAT TREATMENT |
| JP2013028494A (ja) * | 2011-07-28 | 2013-02-07 | Sumitomo Electric Ind Ltd | 黒鉛およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60103087A (ja) * | 1983-11-08 | 1985-06-07 | 日立化成工業株式会社 | 加熱用黒鉛部材 |
| JPS6374995A (ja) * | 1986-09-19 | 1988-04-05 | Toyo Tanso Kk | エピタキシヤル成長用黒鉛材料 |
-
1987
- 1987-06-30 JP JP16489587A patent/JPS649900A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60103087A (ja) * | 1983-11-08 | 1985-06-07 | 日立化成工業株式会社 | 加熱用黒鉛部材 |
| JPS6374995A (ja) * | 1986-09-19 | 1988-04-05 | Toyo Tanso Kk | エピタキシヤル成長用黒鉛材料 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277934A (en) * | 1990-06-27 | 1994-01-11 | Advanced Ceramico Corporation | Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon |
| JP2005133133A (ja) * | 2003-10-29 | 2005-05-26 | Toyobo Co Ltd | 真空薄膜形成装置用防着板 |
| EP1804284A4 (en) * | 2004-10-19 | 2008-03-05 | Canon Anelva Corp | SUBSTRATE HEAT TREATMENT DEVICE AND SUBSTRATE TRANSFER LOAD USED IN SUBSTRATE HEAT TREATMENT |
| JP2013028494A (ja) * | 2011-07-28 | 2013-02-07 | Sumitomo Electric Ind Ltd | 黒鉛およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0471880B2 (enrdf_load_html_response) | 1992-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU644654B2 (en) | Domestic cooking apparatus | |
| CA2175041A1 (en) | Chemical vapour infiltration process of a pyrocarbon matrix within a porous substrate with creation of a temperature gradient in the substrate | |
| JPS649900A (en) | Jig for heat-treating semiconductor wafer | |
| JPS5483165A (en) | Sealing device for rotary (heat-accumulating type) heat exchanger | |
| IL90778A0 (en) | Production of a protective film on a magnesium based substrate | |
| AU5022990A (en) | Improved diamond deposition cell | |
| JPS57205395A (en) | Manufacture of crystal substrate | |
| JPS6467818A (en) | Manufacture of superconducting material | |
| JPS6411498A (en) | Production of diaphragm | |
| JPS5566988A (en) | Device for preventing deposition of volatile substance on electrode plate in direct resistance furnace for heating coke | |
| Sommer | Heat Treatment in the Fluidized Bed | |
| JPS6479096A (en) | Molecular ray cell shutter | |
| JPS5526664A (en) | Manufacturing semiconductor device | |
| JPS57176717A (en) | Vapor phase growing device | |
| JPS60127210A (ja) | 高導電性熱分解炭素薄膜成形物の製造方法 | |
| JPS57210017A (en) | Preparation of active carbon fiber | |
| JPS57175726A (en) | Preparation of boron structural component | |
| JPS5464096A (en) | Manufacture of high density, hard carbobaceous material | |
| Ebersbach et al. | Ion Beam Nitriding of High Purity Iron. II | |
| Zakhryapin | Carbon Treatment in Molybdenum and Transition Metal Carbides During Glow-Discharge Treatment | |
| Li et al. | Equipment and Its Application for Plasma Carbonitriding | |
| Freller et al. | Production of Thin Films of a High Temperature Superconductor by a Plasma-Activated PVD Process, and Cathodes Used in the Process | |
| Thietke | Plasma Technologies: Wide Range | |
| Xu et al. | In-depth oxygen contamination produced in CW CO sub (2) laser annealed Si. | |
| Takeda et al. | Method of Coating a Nitride Ceramic Member |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071116 Year of fee payment: 15 |