JPS649668A - Infrared ray emitting element - Google Patents
Infrared ray emitting elementInfo
- Publication number
- JPS649668A JPS649668A JP16390387A JP16390387A JPS649668A JP S649668 A JPS649668 A JP S649668A JP 16390387 A JP16390387 A JP 16390387A JP 16390387 A JP16390387 A JP 16390387A JP S649668 A JPS649668 A JP S649668A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- clad layer
- lattice constant
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 3
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3218—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities specially strained cladding layers, other than for strain compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16390387A JP2724827B2 (ja) | 1987-07-02 | 1987-07-02 | 赤外発光素子 |
KR88008139A KR970004851B1 (en) | 1987-07-02 | 1988-06-30 | Infrared emitting with dislocation free layer |
GB8815561A GB2207283B (en) | 1987-07-02 | 1988-06-30 | Infrared emitting device |
US07/213,608 US4918496A (en) | 1987-07-02 | 1988-06-30 | Infrared emitting device with dislocation free layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16390387A JP2724827B2 (ja) | 1987-07-02 | 1987-07-02 | 赤外発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS649668A true JPS649668A (en) | 1989-01-12 |
JP2724827B2 JP2724827B2 (ja) | 1998-03-09 |
Family
ID=15783018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16390387A Expired - Fee Related JP2724827B2 (ja) | 1987-07-02 | 1987-07-02 | 赤外発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4918496A (ja) |
JP (1) | JP2724827B2 (ja) |
KR (1) | KR970004851B1 (ja) |
GB (1) | GB2207283B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0454975U (ja) * | 1990-09-17 | 1992-05-12 | ||
WO1992021069A1 (en) * | 1991-05-14 | 1992-11-26 | Seiko Epson Corporation | Image-forming device |
JPH05259506A (ja) * | 1992-01-10 | 1993-10-08 | Internatl Business Mach Corp <Ibm> | 超発光半導体ダイオード及びその製造方法 |
WO2009113685A1 (ja) * | 2008-03-14 | 2009-09-17 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
JP2015053451A (ja) * | 2013-09-09 | 2015-03-19 | 日本電信電話株式会社 | 長波長帯半導体レーザ |
JP2015118961A (ja) * | 2013-12-16 | 2015-06-25 | 日本電信電話株式会社 | 半導体レーザ |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3114809B2 (ja) * | 1989-05-31 | 2000-12-04 | 富士通株式会社 | 半導体装置 |
JPH0327578A (ja) * | 1989-06-23 | 1991-02-05 | Eastman Kodatsuku Japan Kk | 発光ダイオ―ドアレイ |
US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
US5097308A (en) * | 1990-03-13 | 1992-03-17 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
JPH0422185A (ja) * | 1990-05-17 | 1992-01-27 | Mitsubishi Electric Corp | 半導体光素子 |
JP3129779B2 (ja) * | 1991-08-30 | 2001-01-31 | 株式会社東芝 | 半導体レーザ装置 |
JPH07170022A (ja) * | 1993-12-16 | 1995-07-04 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US5625635A (en) * | 1994-11-28 | 1997-04-29 | Sandia Corporation | Infrared emitting device and method |
JP2661576B2 (ja) * | 1994-12-08 | 1997-10-08 | 日本電気株式会社 | 半導体発光素子 |
DE59601142D1 (de) * | 1995-02-28 | 1999-02-25 | Siemens Ag | Integriert optischer wellenleiter mit einer einen steuerbaren komplexen brechungsindex aufweisenden wellenleitenden schicht |
JP3698402B2 (ja) * | 1998-11-30 | 2005-09-21 | シャープ株式会社 | 発光ダイオード |
CN102983069A (zh) * | 2012-12-21 | 2013-03-20 | 中国科学院半导体研究所 | 生长InP基InAs量子阱的方法 |
CN104538843A (zh) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | 二氧化碳检测用半导体激光芯片的制作方法 |
US20200381897A1 (en) * | 2019-06-03 | 2020-12-03 | Mellanox Technologies, Ltd. | Vertical-cavity surface-emitting laser with characteristic wavelength of 910 nm |
CN110600996B (zh) * | 2019-09-26 | 2024-05-14 | 苏州矩阵光电有限公司 | 一种量子阱层结构、半导体激光器及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57152178A (en) * | 1981-03-17 | 1982-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device with super lattice structure |
JPS58222577A (ja) * | 1982-06-18 | 1983-12-24 | Nec Corp | 発光素子 |
JPS5974618A (ja) * | 1982-10-21 | 1984-04-27 | Agency Of Ind Science & Technol | 超格子結晶 |
JPS61158146A (ja) * | 1984-12-28 | 1986-07-17 | エイ・ティ・アンド・ティ・コーポレーション | デバイスの製作方法 |
JPS61181185A (ja) * | 1985-02-07 | 1986-08-13 | Nec Corp | 半導体発光素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58207684A (ja) * | 1982-05-28 | 1983-12-03 | Nippon Telegr & Teleph Corp <Ntt> | ダブルヘテロ接合型半導体発光装置 |
US4599728A (en) * | 1983-07-11 | 1986-07-08 | At&T Bell Laboratories | Multi-quantum well laser emitting at 1.5 μm |
JPS61131414A (ja) * | 1984-11-29 | 1986-06-19 | Sharp Corp | 半導体装置 |
JPH0821748B2 (ja) * | 1985-09-04 | 1996-03-04 | 株式会社日立製作所 | 半導体レ−ザ装置 |
-
1987
- 1987-07-02 JP JP16390387A patent/JP2724827B2/ja not_active Expired - Fee Related
-
1988
- 1988-06-30 GB GB8815561A patent/GB2207283B/en not_active Expired - Lifetime
- 1988-06-30 KR KR88008139A patent/KR970004851B1/ko not_active IP Right Cessation
- 1988-06-30 US US07/213,608 patent/US4918496A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57152178A (en) * | 1981-03-17 | 1982-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device with super lattice structure |
JPS58222577A (ja) * | 1982-06-18 | 1983-12-24 | Nec Corp | 発光素子 |
JPS5974618A (ja) * | 1982-10-21 | 1984-04-27 | Agency Of Ind Science & Technol | 超格子結晶 |
JPS61158146A (ja) * | 1984-12-28 | 1986-07-17 | エイ・ティ・アンド・ティ・コーポレーション | デバイスの製作方法 |
JPS61181185A (ja) * | 1985-02-07 | 1986-08-13 | Nec Corp | 半導体発光素子 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0454975U (ja) * | 1990-09-17 | 1992-05-12 | ||
WO1992021069A1 (en) * | 1991-05-14 | 1992-11-26 | Seiko Epson Corporation | Image-forming device |
US5610647A (en) * | 1991-05-14 | 1997-03-11 | Seigo Epson Corporation | Image forming apparatus including a plural laser beam scanning apparatus |
US6326992B1 (en) | 1991-05-14 | 2001-12-04 | Seiko Epson Corporation | Image forming apparatus |
JPH05259506A (ja) * | 1992-01-10 | 1993-10-08 | Internatl Business Mach Corp <Ibm> | 超発光半導体ダイオード及びその製造方法 |
WO2009113685A1 (ja) * | 2008-03-14 | 2009-09-17 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
US8309980B2 (en) | 2008-03-14 | 2012-11-13 | Asahi Kasei Microdevices Corporation | Infrared light emitting device |
JP2014013944A (ja) * | 2008-03-14 | 2014-01-23 | Asahi Kasei Electronics Co Ltd | 赤外線発光素子 |
JP5526360B2 (ja) * | 2008-03-14 | 2014-06-18 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
JP2015053451A (ja) * | 2013-09-09 | 2015-03-19 | 日本電信電話株式会社 | 長波長帯半導体レーザ |
JP2015118961A (ja) * | 2013-12-16 | 2015-06-25 | 日本電信電話株式会社 | 半導体レーザ |
Also Published As
Publication number | Publication date |
---|---|
US4918496A (en) | 1990-04-17 |
GB8815561D0 (en) | 1988-08-03 |
KR970004851B1 (en) | 1997-04-04 |
GB2207283A (en) | 1989-01-25 |
JP2724827B2 (ja) | 1998-03-09 |
KR890003050A (ko) | 1989-04-12 |
GB2207283B (en) | 1991-01-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |