JPS6489478A - Low-carrier concentration superconducting three-terminal device - Google Patents

Low-carrier concentration superconducting three-terminal device

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Publication number
JPS6489478A
JPS6489478A JP62244274A JP24427487A JPS6489478A JP S6489478 A JPS6489478 A JP S6489478A JP 62244274 A JP62244274 A JP 62244274A JP 24427487 A JP24427487 A JP 24427487A JP S6489478 A JPS6489478 A JP S6489478A
Authority
JP
Japan
Prior art keywords
effect
film
oxide superconducting
insulating substrate
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62244274A
Other languages
Japanese (ja)
Inventor
Shinichi Morohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62244274A priority Critical patent/JPS6489478A/en
Publication of JPS6489478A publication Critical patent/JPS6489478A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To be able to respond to a minute change of a gate voltage (difference) by generating an electrical field effect and quantum interference effect at the same time by providing a low-carrier concentration superconducting film formed on an insulating substrate and having a loop part of branching and merging that produce quantum effect between input terminals, between output terminals, and between these terminals. CONSTITUTION:An insulating substrate 1 consists of a silicon substrate 1A and an insulating film 1B such as SiO2 deposited on it. The composition of an oxide superconducting film 5 is, for example, YBaCuOx and after it is formed on the insulating substrate 1 by a sputtering method or deposition method, it is prepared by a dry etching method such as a reactive ion etching method so that a loop part 2 exists. Next, an insulating film 6 is deposited and formed to cover the entire surface of an oxide superconducting film 5. Then, gate electrodes 7A and 7B are formed on an insulating film 6 so that each of them crosses one branch route 2A and 2B. Its material is an oxide superconducting material, alloy superconducting material like NbTi, or a metal like W. In this case, a three-terminal device effect is obtained from a change of carrier mobility due to the quantum interference effect and electric field effect.
JP62244274A 1987-09-30 1987-09-30 Low-carrier concentration superconducting three-terminal device Pending JPS6489478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244274A JPS6489478A (en) 1987-09-30 1987-09-30 Low-carrier concentration superconducting three-terminal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244274A JPS6489478A (en) 1987-09-30 1987-09-30 Low-carrier concentration superconducting three-terminal device

Publications (1)

Publication Number Publication Date
JPS6489478A true JPS6489478A (en) 1989-04-03

Family

ID=17116309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244274A Pending JPS6489478A (en) 1987-09-30 1987-09-30 Low-carrier concentration superconducting three-terminal device

Country Status (1)

Country Link
JP (1) JPS6489478A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260176A (en) * 1988-08-26 1990-02-28 Japan Aviation Electron Ind Ltd Aharonov-bohm effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260176A (en) * 1988-08-26 1990-02-28 Japan Aviation Electron Ind Ltd Aharonov-bohm effect transistor

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