JPS6489478A - Low-carrier concentration superconducting three-terminal device - Google Patents
Low-carrier concentration superconducting three-terminal deviceInfo
- Publication number
- JPS6489478A JPS6489478A JP62244274A JP24427487A JPS6489478A JP S6489478 A JPS6489478 A JP S6489478A JP 62244274 A JP62244274 A JP 62244274A JP 24427487 A JP24427487 A JP 24427487A JP S6489478 A JPS6489478 A JP S6489478A
- Authority
- JP
- Japan
- Prior art keywords
- effect
- film
- oxide superconducting
- insulating substrate
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To be able to respond to a minute change of a gate voltage (difference) by generating an electrical field effect and quantum interference effect at the same time by providing a low-carrier concentration superconducting film formed on an insulating substrate and having a loop part of branching and merging that produce quantum effect between input terminals, between output terminals, and between these terminals. CONSTITUTION:An insulating substrate 1 consists of a silicon substrate 1A and an insulating film 1B such as SiO2 deposited on it. The composition of an oxide superconducting film 5 is, for example, YBaCuOx and after it is formed on the insulating substrate 1 by a sputtering method or deposition method, it is prepared by a dry etching method such as a reactive ion etching method so that a loop part 2 exists. Next, an insulating film 6 is deposited and formed to cover the entire surface of an oxide superconducting film 5. Then, gate electrodes 7A and 7B are formed on an insulating film 6 so that each of them crosses one branch route 2A and 2B. Its material is an oxide superconducting material, alloy superconducting material like NbTi, or a metal like W. In this case, a three-terminal device effect is obtained from a change of carrier mobility due to the quantum interference effect and electric field effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62244274A JPS6489478A (en) | 1987-09-30 | 1987-09-30 | Low-carrier concentration superconducting three-terminal device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62244274A JPS6489478A (en) | 1987-09-30 | 1987-09-30 | Low-carrier concentration superconducting three-terminal device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489478A true JPS6489478A (en) | 1989-04-03 |
Family
ID=17116309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62244274A Pending JPS6489478A (en) | 1987-09-30 | 1987-09-30 | Low-carrier concentration superconducting three-terminal device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489478A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260176A (en) * | 1988-08-26 | 1990-02-28 | Japan Aviation Electron Ind Ltd | Aharonov-bohm effect transistor |
-
1987
- 1987-09-30 JP JP62244274A patent/JPS6489478A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260176A (en) * | 1988-08-26 | 1990-02-28 | Japan Aviation Electron Ind Ltd | Aharonov-bohm effect transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6486574A (en) | Superconducting device | |
GB889729A (en) | Improvements in and relating to thin film superconductors | |
GB2106419A (en) | Growth of structures based on group iv semiconductor materials | |
JPS6489478A (en) | Low-carrier concentration superconducting three-terminal device | |
Hall et al. | Surface capacity of oxide coated semiconductors | |
GB1469081A (en) | Method of fabrication of a charge-coupled device | |
Yashiro | Some Properties of Vapor Deposited Ge3 N 4, Films and the Ge3 N 4‐Ge Interface | |
JPS54157496A (en) | Manufacture of tunnel junction | |
AU2434688A (en) | Adjusting the transition temperature, the saturation current density with and without a magnetic field and the proportions of normally conducting phases of ceramic superconductors | |
JPS5629383A (en) | Manufacture of tunnel-junction type josephson element | |
JPS6473780A (en) | Manufacture of superconducting device | |
JPS5522885A (en) | Insulation gate type field effect semiconductor device | |
Palau et al. | Calculation of the work function of a substrate-thin film heterojunction | |
Zhang et al. | A superconducting flip‐flop using two interacting weak links | |
JPS6445146A (en) | Manufacture of superconducting device | |
JPS55146987A (en) | Manufacture of tunnel junction type josephson element | |
JPS6445143A (en) | Superconducting device | |
JPS6228568B2 (en) | ||
JPS5799764A (en) | Semiconductor device | |
JPS5610985A (en) | Field control type superconductive multiterminal element | |
JPS6453478A (en) | Electronic device using superconducting material | |
JPS5345170A (en) | Formation of non-oriented semiconductor | |
JPH03198389A (en) | Quantum interference element and circuit thereof | |
JPS57186805A (en) | Integrated circuit for quartz oscillation | |
JPS6438675A (en) | Digital magnetic field detecting apparatus |