JPS6489368A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6489368A
JPS6489368A JP62246571A JP24657187A JPS6489368A JP S6489368 A JPS6489368 A JP S6489368A JP 62246571 A JP62246571 A JP 62246571A JP 24657187 A JP24657187 A JP 24657187A JP S6489368 A JPS6489368 A JP S6489368A
Authority
JP
Japan
Prior art keywords
film
source
drain
operated
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62246571A
Other languages
Japanese (ja)
Other versions
JP2531702B2 (en
Inventor
Noboru Koyama
Yuji Hizuka
Torahiko Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62246571A priority Critical patent/JP2531702B2/en
Publication of JPS6489368A publication Critical patent/JPS6489368A/en
Application granted granted Critical
Publication of JP2531702B2 publication Critical patent/JP2531702B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To stably operate with a low control voltage by forming a semiconductor layer controlled in its conductivity by a gate voltage through a thin insulating film formed between a source and a drain of polymer obtained by polymerization reaction of specific molecules. CONSTITUTION:A metal film 2 which is operated as a gate electrode is formed on a substrate 1, and a polymer film 4 which is operated as a semiconductor layer is formed through an insulating film 3 on the film 2. Further, metal films 5, 6 which are operated as source, drain electrodes are formed on the film 4. The film 4 is formed of polymer obtained by the polymerization reaction of molecules represented by a formula. In the formula, R1, R2, R3 and R4 are one of -H, alkyl group and alkoxy group. Thus, a current flowing between the source and the drain is remarkably largely modulated by a gate voltage at a low voltage between the source and the drain to obtain an FET element which exhibits stable and excellent electric characteristics.
JP62246571A 1987-09-29 1987-09-29 Field effect transistor Expired - Fee Related JP2531702B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62246571A JP2531702B2 (en) 1987-09-29 1987-09-29 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62246571A JP2531702B2 (en) 1987-09-29 1987-09-29 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS6489368A true JPS6489368A (en) 1989-04-03
JP2531702B2 JP2531702B2 (en) 1996-09-04

Family

ID=17150393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62246571A Expired - Fee Related JP2531702B2 (en) 1987-09-29 1987-09-29 Field effect transistor

Country Status (1)

Country Link
JP (1) JP2531702B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004006337A1 (en) * 2002-07-02 2004-01-15 Sony Corporation Semiconductor device and method for manufacturing same
JP2006179860A (en) * 2004-12-23 2006-07-06 Hynix Semiconductor Inc Capacitor of semiconductor device and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2490165A (en) * 2011-04-21 2012-10-24 Cpi Innovation Services Ltd Organic thin film transistor with crystal grain variation compensated by shape of source and drain electrodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004006337A1 (en) * 2002-07-02 2004-01-15 Sony Corporation Semiconductor device and method for manufacturing same
US7615775B2 (en) 2002-07-02 2009-11-10 Sony Corporation Semiconductor apparatus and process for fabricating same
KR100987399B1 (en) * 2002-07-02 2010-10-13 소니 가부시키가이샤 Semiconductor device and method for manufacturing same
US9356247B2 (en) 2002-07-02 2016-05-31 Sony Corporation Semiconductor device and method for manufacturing the same
JP2006179860A (en) * 2004-12-23 2006-07-06 Hynix Semiconductor Inc Capacitor of semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2531702B2 (en) 1996-09-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees