JPS648671A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS648671A JPS648671A JP16227287A JP16227287A JPS648671A JP S648671 A JPS648671 A JP S648671A JP 16227287 A JP16227287 A JP 16227287A JP 16227287 A JP16227287 A JP 16227287A JP S648671 A JPS648671 A JP S648671A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light
- layer
- thin film
- cvd method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To suppress a carrier of a drain region, to prevent an OFF current from increasing, and to obtain preferable switching characteristic under light irradiation by forming a light shielding structure in which light is not radiated on the semiconductor layer of the drain region in the drain region. CONSTITUTION:A gate electrode 2 made of molybdenum is formed on a glass substrate 1, and a silicon nitride film which becomes a gate insulating film 3 is deposited by a plasma CVD method. A semiconductor thin film layer 4 is formed by patterning an amorphous silicon layer deposited by a plasma CVD method. In order to improve ohmic property, a phosphorus-doped amorphous silicon layer 11 is formed by a plasma CVD method among a source electrode 5, a drain electrode 6 and the layer 4. When a light 10 is irradiated from the gate of this thin film transistor, the electrode 2 becomes a light shielding layer. Accordingly, an amorphous silicon layer 7 of the region of the electrode 5 is merely irradiated with a light, and the electrode 6 is not radiated with the light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16227287A JPS648671A (en) | 1987-07-01 | 1987-07-01 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16227287A JPS648671A (en) | 1987-07-01 | 1987-07-01 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648671A true JPS648671A (en) | 1989-01-12 |
Family
ID=15751309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16227287A Pending JPS648671A (en) | 1987-07-01 | 1987-07-01 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648671A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100288112B1 (en) * | 1993-06-24 | 2001-12-12 | 야마자끼 순페이 | A semiconductor device and method of manufacturing same |
-
1987
- 1987-07-01 JP JP16227287A patent/JPS648671A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100288112B1 (en) * | 1993-06-24 | 2001-12-12 | 야마자끼 순페이 | A semiconductor device and method of manufacturing same |
| US6335540B1 (en) | 1993-06-24 | 2002-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
| US6573589B2 (en) | 1993-06-24 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
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