JPS6486553A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS6486553A JPS6486553A JP62244461A JP24446187A JPS6486553A JP S6486553 A JPS6486553 A JP S6486553A JP 62244461 A JP62244461 A JP 62244461A JP 24446187 A JP24446187 A JP 24446187A JP S6486553 A JPS6486553 A JP S6486553A
- Authority
- JP
- Japan
- Prior art keywords
- well layer
- trench section
- shaped
- transfer means
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 231100000989 no adverse effect Toxicity 0.000 abstract 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To prevent an adverse effect based on external light projected from the outside of a light-shielding film by forming a trench section, in which a well layer is not shaped, around an element region. CONSTITUTION:A P-type well layer 6 is formed onto an N-type semiconductor substrate 1, and photo-diodes 2 and transfer means 3 are shaped to the well layer 6. The transfer means 3 form N-type charge transfer paths, and are isolated mutually by element isolation layers 7 composed of P<+> diffusion layers. A trench section 12 to which the well layer 6 is not shaped is formed around an element region in which the photo-diodes 2 and the transfer means 3 are shaped. The well layer 6 and the element isolation layers 7 are isolated into the inside and the outside by the trench section. Consequently, the trench section 12 is filled with the N-type semiconductor substrate 1. According to such structure, electrons generated by external light are discharged to the substrate, to which positive voltage is applied, from the trench section 12 even when they are directed toward the inside, and do not flow into the photo-diodes 2 and the transfer means 3 and have no adverse effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244461A JPS6486553A (en) | 1987-09-29 | 1987-09-29 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244461A JPS6486553A (en) | 1987-09-29 | 1987-09-29 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6486553A true JPS6486553A (en) | 1989-03-31 |
Family
ID=17118993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62244461A Pending JPS6486553A (en) | 1987-09-29 | 1987-09-29 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6486553A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151676A (en) * | 2000-03-17 | 2002-05-24 | Nikon Corp | Image pickup device, its manufacturing method, alignment device, aligner, abberation measuring instrument, and method of manufacturing the device |
-
1987
- 1987-09-29 JP JP62244461A patent/JPS6486553A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151676A (en) * | 2000-03-17 | 2002-05-24 | Nikon Corp | Image pickup device, its manufacturing method, alignment device, aligner, abberation measuring instrument, and method of manufacturing the device |
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