JPH0316477A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH0316477A JPH0316477A JP1151860A JP15186089A JPH0316477A JP H0316477 A JPH0316477 A JP H0316477A JP 1151860 A JP1151860 A JP 1151860A JP 15186089 A JP15186089 A JP 15186089A JP H0316477 A JPH0316477 A JP H0316477A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- semiconductor region
- conversion element
- type semiconductor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 24
- 239000010410 layer Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 101100115215 Caenorhabditis elegans cul-2 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 竜暮上の利用分野 本発明は固体撮像装置に関するものである。[Detailed description of the invention] Fields of use for Ryugu The present invention relates to a solid-state imaging device.
従来の技術
近年、固体撮像装置の開発が進み、性能の点から見て撮
像管に匹敵ないし、上回るものがある。2. Description of the Related Art In recent years, the development of solid-state imaging devices has progressed, and some of them are comparable to or even superior to image pickup tubes in terms of performance.
そのなかでもインターライン転送方式ＣＯＤ固体撮像装
置（以下ＩＴ−ＣＣＤと略記）は特に優れた特性を持っ
ておシ実用化されている。Among them, an interline transfer type COD solid-state imaging device (hereinafter abbreviated as IT-CCD) has particularly excellent characteristics and has been put into practical use.
以下、図面を参照しながら、ＩＴ−ＣＯＤの従来の構或
について説明する。Hereinafter, the conventional structure of IT-COD will be explained with reference to the drawings.
第４図はＩＴ−ＣＯＤの全体構戒図である。第６図にお
いて、１は光電変換素子、２は光電変換素子１に蓄積さ
れた信号電荷を転送する垂直転送ＣＣＤ （以下ｖ−Ｃ
ＣＤと略記）、３はｖ−ｃａｎ２により転送された信号
電荷を水平方向に転送する水平転送ＣＯＤ、４は水平転
送ＣＣＤ３によシ転送された信号電荷を検知する電荷検
知部である。Figure 4 shows the overall structure of IT-COD. In FIG. 6, 1 is a photoelectric conversion element, and 2 is a vertical transfer CCD (hereinafter referred to as v-C) that transfers the signal charge accumulated in the photoelectric conversion element 1.
3 is a horizontal transfer COD that horizontally transfers the signal charges transferred by the v-can 2, and 4 is a charge detection section that detects the signal charges transferred by the horizontal transfer CCD 3.
第６図は第４図の破線領域の拡大図である。ただし、電
極は省略してある。第６図では半導体表面を示す。６は
画素分離のＰ形半導体領域、６はＶ−ＣＯＤチャネルの
ｎ形半導体領域である。FIG. 6 is an enlarged view of the broken line area in FIG. 4. However, the electrodes are omitted. FIG. 6 shows the semiconductor surface. 6 is a p-type semiconductor region for pixel isolation, and 6 is an n-type semiconductor region for a V-COD channel.
第６図は第６図の▲−▲′間の断面図である。FIG. 6 is a sectional view taken along the line ▲-▲' in FIG.
７は半導体基板のＰ形領域、８は半導体基板のｎ形半導
体、９は光電変換素子のｎ形半導体領域、１０は光電変
換素子のｎ形半導体領域９じ蓄えられた信号電荷を光電
変換素子のｎ形半導体領域９の左側のｖ−ｃａｎチャネ
ル６に読み出して、垂直転送を行うためのポリシリコン
ゲート層、１１は遮光用のアルミ層、１２は層間絶縁及
びパッシペーシ冒ンを行う絶縁膜である。半導体基板の
Ｐ形領域７と画素分離のＰ形半導体領域６はつながって
お９、ほぼ同じ電位が加わるようになっている。7 is a P-type region of the semiconductor substrate, 8 is an n-type semiconductor of the semiconductor substrate, 9 is an n-type semiconductor region of the photoelectric conversion element, and 10 is an n-type semiconductor region of the photoelectric conversion element.The stored signal charge is transferred to the photoelectric conversion element. 11 is an aluminum layer for light shielding, and 12 is an insulating film for interlayer insulation and passivation. be. The P-type region 7 of the semiconductor substrate and the P-type semiconductor region 6 of the pixel isolation are connected 9 so that almost the same potential is applied to them.
発明が解決しよう一とする課題
しかしながら、上記のような構或では、光電変換素子の
ｎ形半導体領域９に蓄えられた電荷である電子を半導体
基板のｎ形領域８にぬき去る場合、半導体基板のｎ形半
導体領域８に、半導体基板のＰ形半導体領域アに加わっ
ている電圧よう高い電圧を加えることで光電変換素子に
蓄積される電荷を制御することができるが、半導体基板
のＰ形半導体領域７とｎ形半導体領域８の電位差をかな
り大きくしなければ、十分蓄積電荷を制御することがで
きないという欠点を有していた。Problem to be Solved by the Invention However, in the above structure, when the electrons, which are the charges stored in the n-type semiconductor region 9 of the photoelectric conversion element, are removed to the n-type region 8 of the semiconductor substrate, the semiconductor substrate The charge accumulated in the photoelectric conversion element can be controlled by applying a voltage as high as the voltage applied to the P-type semiconductor region A of the semiconductor substrate to the N-type semiconductor region 8 of the semiconductor substrate. This has the disadvantage that the accumulated charge cannot be sufficiently controlled unless the potential difference between the region 7 and the n-type semiconductor region 8 is made considerably large.
本発明は、上記欠点に鑑み、光電変換素子に蓄えられた
電荷の制御を容易にする固体撮像装置を提供するもので
ある。In view of the above drawbacks, the present invention provides a solid-state imaging device that facilitates control of charges stored in photoelectric conversion elements.
課題を解決するための手段
上記課題を解決するために、本発明の固体撮像装置は、
行列状に配列された複数個の光電変換素子と前記光電変
換素子で発生した信号電荷を転送する転送部を備え、信
号電荷を蓄積する前記光電変換素子のｎ形半導体領域の
表面に、前記光電変換素子間や、前記光電変換素子と前
記転送部の間にある画素分離のＰ形半導体領域に接触し
ない光電変換素子表面のＰ形半導体領域を持ち、前記光
電変換素子表面のＰ形半導体領域に、前記画素分離のＰ
形半導体領域よう低い電圧を加えることで、信号電荷を
蓄積する前記光電変換素子のｎ形半導体領域に蓄えられ
た電荷である電子のすくな〈とも一部を、信号電荷を蓄
積する前記光電変換素子のｎ形半導体領域と異るｎ形半
導体に移し、前記光電変換素子のｎ形半導体領域の蓄積
信号電荷量を制御することのできる構或となっている。Means for Solving the Problems In order to solve the above problems, the solid-state imaging device of the present invention includes:
The photoelectric conversion element includes a plurality of photoelectric conversion elements arranged in a matrix and a transfer section for transferring signal charges generated in the photoelectric conversion element, and the photoelectric conversion element is provided on the surface of the n-type semiconductor region of the photoelectric conversion element that accumulates signal charges. A P-type semiconductor region on the surface of the photoelectric conversion element that does not contact a P-type semiconductor region of pixel separation between the conversion elements or between the photoelectric conversion element and the transfer section, and a P-type semiconductor region on the surface of the photoelectric conversion element. , P of the pixel separation
By applying a low voltage to the n-type semiconductor region of the photoelectric conversion element that accumulates signal charges, at least part of the electrons that are the charges stored in the n-type semiconductor region of the photoelectric conversion element that accumulates signal charges is transferred to the photoelectric conversion element that accumulates signal charges. The structure is such that the amount of signal charge accumulated in the n-type semiconductor region of the photoelectric conversion element can be controlled by transferring the photoelectric conversion element to an n-type semiconductor different from the n-type semiconductor region of the photoelectric conversion element.
作用
との構或によって、光電変換素子の表面のＰ形半導体領
域に半導体基板のＰ形半導体領域に対してマイナスの電
圧を加えることで、光電変換素子のｎ形領域の空乏層幅
を制御し、光電変換素子の電荷蓄積量を容易に変えるこ
とができ、余分な電荷を消去することができる。By applying a negative voltage to the P-type semiconductor region on the surface of the photoelectric conversion element with respect to the P-type semiconductor region of the semiconductor substrate, the width of the depletion layer in the n-type region of the photoelectric conversion element is controlled. , the amount of charge accumulated in the photoelectric conversion element can be easily changed, and excess charges can be erased.
実施例
以下、本発明の実施例について、図面を参照しながら説
明する。第１図は本発明の一実施例における固体撮像装
置の光電変換素子１とＶ−ＣＣＤ２の拡大図である。第
１図は固体撮像素子表面を示してあり、電極は省略して
ある。第５図と同一溝或部分には同一番号を付して説明
を省略する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings. FIG. 1 is an enlarged view of a photoelectric conversion element 1 and a V-CCD 2 of a solid-state imaging device according to an embodiment of the present invention. FIG. 1 shows the surface of the solid-state image sensor, and electrodes are omitted. Grooves or portions that are the same as those in FIG. 5 are given the same numbers and their explanations will be omitted.
１３は光電変換素子表面のＰ形半導体領域である。13 is a P-type semiconductor region on the surface of the photoelectric conversion element.
第２図は第１図のＢ−Ｂ’間の断面図である。FIG. 2 is a sectional view taken along line B-B' in FIG.
１４は電荷制御用電極である。第１図，第２図からわか
るように、光電変換素子表面のＰ形半導体領域１３は半
導体基板のＰ形半導体領域７や画素分離のＰ形半導体領
域６に接触しないようになっている。14 is a charge control electrode. As can be seen from FIGS. 1 and 2, the P-type semiconductor region 13 on the surface of the photoelectric conversion element does not come into contact with the P-type semiconductor region 7 of the semiconductor substrate or the P-type semiconductor region 6 of the pixel isolation.
第３図は第２図のｃ−ｃ’間のポテンシャル図である。FIG. 3 is a potential diagram between c and c' in FIG.
ａは、光電変換素子表面のＰ形半導体領域１３と、半導
体基板のＰ形半導体領域７の両方にＯｖの同電位を加え
、半導体基板のｎ形半導体領域８に６ｖを加えた場合の
ポテンシャル図ｂは光電変換素子表面のＰ形半導体領域
１３に、半導体基板のＰ形半導体領域７より１ｏｖ低い
電圧を加えた時のポテンシャル図である。１５はＰｎ接
合面である。１６は空乏層、Ｘ，はａの場合の電荷が蓄
えられている領域、ｘ２はｂの場合の電荷が蓄えられて
いる領域である。ａとｂを比較すると、光電変換素子表
面のＰ形半導体領域１３にマイナス１０Ｖを加えること
で、光電変換素子のｎ形半導体領域９と光電変換素子表
面のＰ形半導体領域１３の間の空乏層が広がることがわ
かる。ａの場合にｘ１の距離分蓄えられていた電荷の一
部が半導体基板のＰ形半導体領域７を乗夛越えて、半導
体基板のｎ形半導体領域８に流れ込み、光電変換素子１
に蓄えられる距離をｘ２へ変えることができ、電荷蓄積
量を制御することができる。a is a potential diagram when the same potential of Ov is applied to both the P-type semiconductor region 13 on the surface of the photoelectric conversion element and the P-type semiconductor region 7 of the semiconductor substrate, and 6V is applied to the n-type semiconductor region 8 of the semiconductor substrate. b is a potential diagram when a voltage 1 ov lower than that of the P-type semiconductor region 7 of the semiconductor substrate is applied to the P-type semiconductor region 13 on the surface of the photoelectric conversion element. 15 is a Pn junction surface. 16 is a depletion layer, X is a region where charges in case a are stored, and x2 is a region where charges are stored in case b. Comparing a and b, by applying -10V to the P-type semiconductor region 13 on the surface of the photoelectric conversion element, the depletion layer between the n-type semiconductor region 9 of the photoelectric conversion element and the P-type semiconductor region 13 on the surface of the photoelectric conversion element You can see that it spreads. In case a, a part of the charge stored for the distance x1 crosses over the P-type semiconductor region 7 of the semiconductor substrate and flows into the N-type semiconductor region 8 of the semiconductor substrate, and the photoelectric conversion element 1
The distance stored in x2 can be changed to x2, and the amount of charge stored can be controlled.
発明の効果
以上のように、本発明は光電変換素子表面に、電荷制御
用のＰ形半導体領域を作シ、半導体基板のＰ形半導体領
域より低い電圧を加えることで、光電変換素子のｎ形半
導体領域の空乏層幅を制御し、光電変換素子の電荷蓄積
量を容易に変えることができる。１た余分な電荷は、半
導体基板のＰ形半導体領域を乗り越えて半導体基板のｎ
形半導体領域に消去することができ、その実用的効果は
大なるものがある。Effects of the Invention As described above, the present invention forms a P-type semiconductor region for charge control on the surface of a photoelectric conversion element, and applies a voltage lower than that of the P-type semiconductor region of the semiconductor substrate to form an N-type semiconductor region of the photoelectric conversion element. By controlling the width of the depletion layer in the semiconductor region, the amount of charge storage in the photoelectric conversion element can be easily changed. 1 extra charge passes over the P-type semiconductor region of the semiconductor substrate and
It can be erased into a shaped semiconductor region, and its practical effects are great.
第１図は本発明の一実施例にかける固体撮像装置の光電
変換素子とｖ−ｃｃｎの拡大図、第２図は第１図のＢ−
Ｂ’断面図、第３図は第２図のポテンシャル図、第４図
はＩＴ−ＣＬＯＤの全体構或図、第５図は第４図のＩＴ
−ＣＯＤの拡大図、第６図は第６図のＡ一λ′断面図で
ある。
１・・・・・・光電変換素子、２・・・・・・垂直転送
ＣＯＤ（”ｌ／−ＣＯＤ）、３・・・・・・水平転送Ｃ
Ｏ Ｄ （Ｈ−ＣＯＤ）、４・・・・・・電荷検知部
、６・・・・・・素子分離のＰ形半導体領域、６・・・
・・・ｖ−ｃａｎチャネルのｎ形半導体領域、７・・・
・・・半導体基板のＰ形半導体領域、８・・・・・・半
導体基板のｎ形半導体領域、９・・・・・・光電変換素
子のｎ形半導体領域、１０・・・・・・ポリシリコンゲ
ート層、１１・・・・・・遮光用のアルミ層、１２・・
・・・・絶縁層、１３・・・・・・光電変換素子表面の
Ｐ形半導体領域、１４・・・・・・電荷制御用電極、１
６・・・・・・Ｐｎ接合面、１６・・・・・・空乏層。FIG. 1 is an enlarged view of a photoelectric conversion element and v-ccn of a solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is an enlarged view of B-ccn in FIG.
B' sectional view, Figure 3 is the potential diagram in Figure 2, Figure 4 is the overall configuration of IT-CLOD, Figure 5 is the IT in Figure 4.
- An enlarged view of COD, FIG. 6 is a sectional view taken along line A-λ' in FIG. 1...Photoelectric conversion element, 2...Vertical transfer COD ("l/-COD), 3...Horizontal transfer C
O D (H-COD), 4... Charge detection section, 6... P-type semiconductor region for element isolation, 6...
... n-type semiconductor region of v-can channel, 7...
... P-type semiconductor region of semiconductor substrate, 8 ... N-type semiconductor region of semiconductor substrate, 9 ... N-type semiconductor region of photoelectric conversion element, 10 ... Polyester Silicon gate layer, 11...Aluminum layer for light shielding, 12...
... Insulating layer, 13 ... P-type semiconductor region on the surface of photoelectric conversion element, 14 ... Charge control electrode, 1
6...Pn junction surface, 16...depletion layer.
Claims (1)
変換素子で発生した信号電荷を転送する転送部を備え、
信号電荷を蓄積する前記光電変換素子のｎ形半導体領域
の表面に、前記光電変換素子間や、前記光電変換素子と
前記転送部の間にある画素分離のＰ形半導体領域に接触
しない光電変換素子表面のＰ形半導体領域を持ち、前記
光電変換素子表面のＰ形半導体領域に、前記画素分離の
Ｐ形半導体領域より低い電圧を加えることで、信号電荷
を蓄積する前記光電変換素子のｎ形半導体領域に蓄えら
れた電荷である電子のすくなくとも一部を、信号電荷を
蓄積する前記光電変換素子のｎ形半導体領域と異るｎ形
半導体に移し、前記光電変換素子のｎ形半導体領域の蓄
積信号電荷量を制御し得るように構成した固体撮像装置
。comprising a plurality of photoelectric conversion elements arranged in a matrix and a transfer section that transfers signal charges generated in the photoelectric conversion elements,
A photoelectric conversion element that does not come into contact with the pixel separation P-type semiconductor region between the photoelectric conversion elements or between the photoelectric conversion element and the transfer section, on the surface of the n-type semiconductor region of the photoelectric conversion element that accumulates signal charges. The n-type semiconductor of the photoelectric conversion element has a P-type semiconductor region on the surface and accumulates signal charges by applying a lower voltage to the P-type semiconductor region on the surface of the photoelectric conversion element than the P-type semiconductor region of the pixel separation. At least a part of the electrons, which are the charges stored in the region, are transferred to an n-type semiconductor different from the n-type semiconductor region of the photoelectric conversion element that accumulates signal charges, and the accumulated signal of the n-type semiconductor region of the photoelectric conversion element is transferred. A solid-state imaging device configured to control the amount of charge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1151860A JPH0316477A (en) | 1989-06-14 | 1989-06-14 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1151860A JPH0316477A (en) | 1989-06-14 | 1989-06-14 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0316477A true JPH0316477A (en) | 1991-01-24 |
Family
ID=15527827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1151860A Pending JPH0316477A (en) | 1989-06-14 | 1989-06-14 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0316477A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942749A (en) * | 1996-07-29 | 1999-08-24 | Nec Corporation | Photodetector having means for processing optical input signals |
| US7352029B2 (en) | 2005-04-27 | 2008-04-01 | International Business Machines Corporation | Electronically scannable multiplexing device |
| US7385234B2 (en) | 2005-04-27 | 2008-06-10 | International Business Machines Corporation | Memory and logic devices using electronically scannable multiplexing devices |
-
1989
- 1989-06-14 JP JP1151860A patent/JPH0316477A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942749A (en) * | 1996-07-29 | 1999-08-24 | Nec Corporation | Photodetector having means for processing optical input signals |
| US7352029B2 (en) | 2005-04-27 | 2008-04-01 | International Business Machines Corporation | Electronically scannable multiplexing device |
| US7385234B2 (en) | 2005-04-27 | 2008-06-10 | International Business Machines Corporation | Memory and logic devices using electronically scannable multiplexing devices |
| US7795044B2 (en) | 2005-04-27 | 2010-09-14 | International Business Machines Corporation | Electronically scannable multiplexing device |
| US8178362B2 (en) | 2005-04-27 | 2012-05-15 | International Business Machines Corporation | Electronically scannable multiplexing device |
| US8552414B2 (en) | 2005-04-27 | 2013-10-08 | International Business Machines Corporation | Electronically scannable multiplexing device |
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