JPS6486144A - Method for patterning resist - Google Patents

Method for patterning resist

Info

Publication number
JPS6486144A
JPS6486144A JP24470587A JP24470587A JPS6486144A JP S6486144 A JPS6486144 A JP S6486144A JP 24470587 A JP24470587 A JP 24470587A JP 24470587 A JP24470587 A JP 24470587A JP S6486144 A JPS6486144 A JP S6486144A
Authority
JP
Japan
Prior art keywords
mask
resist
exposed part
usage
resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24470587A
Other languages
Japanese (ja)
Other versions
JP2506385B2 (en
Inventor
Kota Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24470587A priority Critical patent/JP2506385B2/en
Publication of JPS6486144A publication Critical patent/JPS6486144A/en
Application granted granted Critical
Publication of JP2506385B2 publication Critical patent/JP2506385B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To improve the usage and resolution of general resist by using masks which have different transmission wavelength for an exposed part and an unexposed part. CONSTITUTION:This method consists of a light source 1 which has a wide light emission spectrum, a mask 2, a mask substrate 21 made of synthetic quartz, a mask film 22 formed by adhering materials with transmission wavelength bands on the mask substrate 21 at the unexposed part A and exposed part B, a positive resist film 3, and a wafer 4. Then this mask is used to form lines (a) and spaces (b) on the positive resist film 3. Therefore, the fusion difficulty increases at the unexposed part and the fusibility is increased at the exposed part. Consequently, the resist itself is not improved, so the usage and resolution of the general resist are improved.
JP24470587A 1987-09-29 1987-09-29 Resist patterning method Expired - Lifetime JP2506385B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24470587A JP2506385B2 (en) 1987-09-29 1987-09-29 Resist patterning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24470587A JP2506385B2 (en) 1987-09-29 1987-09-29 Resist patterning method

Publications (2)

Publication Number Publication Date
JPS6486144A true JPS6486144A (en) 1989-03-30
JP2506385B2 JP2506385B2 (en) 1996-06-12

Family

ID=17122700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24470587A Expired - Lifetime JP2506385B2 (en) 1987-09-29 1987-09-29 Resist patterning method

Country Status (1)

Country Link
JP (1) JP2506385B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916380A (en) * 1972-05-22 1974-02-13
JPS57104933A (en) * 1980-12-22 1982-06-30 Seiko Epson Corp See-through glass mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916380A (en) * 1972-05-22 1974-02-13
JPS57104933A (en) * 1980-12-22 1982-06-30 Seiko Epson Corp See-through glass mask

Also Published As

Publication number Publication date
JP2506385B2 (en) 1996-06-12

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