JPS6482517A - Epitaxial crystal growth method - Google Patents
Epitaxial crystal growth methodInfo
- Publication number
- JPS6482517A JPS6482517A JP24182087A JP24182087A JPS6482517A JP S6482517 A JPS6482517 A JP S6482517A JP 24182087 A JP24182087 A JP 24182087A JP 24182087 A JP24182087 A JP 24182087A JP S6482517 A JPS6482517 A JP S6482517A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gallium arsenide
- arsenide layer
- wafer
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24182087A JPS6482517A (en) | 1987-09-24 | 1987-09-24 | Epitaxial crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24182087A JPS6482517A (en) | 1987-09-24 | 1987-09-24 | Epitaxial crystal growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482517A true JPS6482517A (en) | 1989-03-28 |
Family
ID=17079984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24182087A Pending JPS6482517A (en) | 1987-09-24 | 1987-09-24 | Epitaxial crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482517A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6919533B2 (en) | 1995-05-31 | 2005-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a display device including irradiating overlapping regions |
-
1987
- 1987-09-24 JP JP24182087A patent/JPS6482517A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6919533B2 (en) | 1995-05-31 | 2005-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a display device including irradiating overlapping regions |
US6982396B2 (en) * | 1995-05-31 | 2006-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a display device including irradiating overlapping regions |
US7223938B2 (en) | 1995-05-31 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a display device including irradiating overlapping regions |
US8835801B2 (en) | 1995-05-31 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
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