JPS6479371A - Coating method with hard carbon film - Google Patents

Coating method with hard carbon film

Info

Publication number
JPS6479371A
JPS6479371A JP23462487A JP23462487A JPS6479371A JP S6479371 A JPS6479371 A JP S6479371A JP 23462487 A JP23462487 A JP 23462487A JP 23462487 A JP23462487 A JP 23462487A JP S6479371 A JPS6479371 A JP S6479371A
Authority
JP
Japan
Prior art keywords
film
carbon film
hard carbon
titanium nitride
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23462487A
Other languages
Japanese (ja)
Inventor
Koichi Naoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP23462487A priority Critical patent/JPS6479371A/en
Publication of JPS6479371A publication Critical patent/JPS6479371A/en
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve the stability and reliability of a hard carbon film by coating a substrate with the carbon film after coating with an intermediate layer of dark-brown titanium nitride by vapor phase synthesis. CONSTITUTION:A dark-brown titanium nitride film as an intermediate layer is formed on a substrate by vapor phase synthesis and a hard carbon film as a second layer is formed on the intermediate layer by vapor phase synthesis. Since the titanium nitride film is formed under such conditions as a high flow rate of gaseous nitrogen and low plasma density, fine projections are obtd. on the surface of the film and the tips are made acicular. The hue of the titanium nitride film desirably satisfies 5<=a*<=10 and 9<=b*<=22. The saturation and lightness of the film desirably satisfy 11<=c*<=19 and 36<=L*<=47, respectively. The substrate can be coated with the hard carbon film having superior stability and reliability.
JP23462487A 1987-09-18 1987-09-18 Coating method with hard carbon film Pending JPS6479371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23462487A JPS6479371A (en) 1987-09-18 1987-09-18 Coating method with hard carbon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23462487A JPS6479371A (en) 1987-09-18 1987-09-18 Coating method with hard carbon film

Publications (1)

Publication Number Publication Date
JPS6479371A true JPS6479371A (en) 1989-03-24

Family

ID=16973957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23462487A Pending JPS6479371A (en) 1987-09-18 1987-09-18 Coating method with hard carbon film

Country Status (1)

Country Link
JP (1) JPS6479371A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455081A (en) * 1990-09-25 1995-10-03 Nippon Steel Corporation Process for coating diamond-like carbon film and coated thin strip
WO2007072658A1 (en) 2005-12-21 2007-06-28 Kabushiki Kaisha Riken Amorphous hard carbon coating
US8377830B2 (en) 2006-02-23 2013-02-19 Renesas Electronics Corporation Method of manufacturing a semiconductor device and wet processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455081A (en) * 1990-09-25 1995-10-03 Nippon Steel Corporation Process for coating diamond-like carbon film and coated thin strip
WO2007072658A1 (en) 2005-12-21 2007-06-28 Kabushiki Kaisha Riken Amorphous hard carbon coating
US7955691B2 (en) 2005-12-21 2011-06-07 Kabushiki Kaisha Riken Hard amorphous carbon film
US8377830B2 (en) 2006-02-23 2013-02-19 Renesas Electronics Corporation Method of manufacturing a semiconductor device and wet processing apparatus

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