JPS64774A - Flexible photodetector and manufacture thereof - Google Patents

Flexible photodetector and manufacture thereof

Info

Publication number
JPS64774A
JPS64774A JP63034660A JP3466088A JPS64774A JP S64774 A JPS64774 A JP S64774A JP 63034660 A JP63034660 A JP 63034660A JP 3466088 A JP3466088 A JP 3466088A JP S64774 A JPS64774 A JP S64774A
Authority
JP
Japan
Prior art keywords
formula
substrate
electric insulating
polyimide
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63034660A
Other languages
Japanese (ja)
Other versions
JPH01774A (en
Inventor
Takeshi Tsunohashi
Kazuhito Goto
Akira Namikawa
Toshio Nakajima
Toshihiko Sugimoto
Motoshige Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP63034660A priority Critical patent/JPS64774A/en
Publication of JPH01774A publication Critical patent/JPH01774A/en
Publication of JPS64774A publication Critical patent/JPS64774A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent curling of a flexible photodetector, by providing the photodetector between a substrate made of polyimide based film or polyether-sulfone based film and a flexible electric insulating layer, which has the equivalent thermal contracting characteristic to that of the substrate. CONSTITUTION:Polyimide film, whose main component is polyimide, or polyether sulfone film, which is shown by formula (I), formula (II) or formula (III), is used to form a substrate. In the formula (I), X1 is O, SO2, CH2 or CO. In the formula (II), X2 is SO2, C(CH3)2 or C(CF3)2. In the formula (III), X3 is a direct bonded, bivalent chain type hydrocarbon group, whose number of carbon is 1-10, and the like. A step for forming a semiconductor layer having photovoltaic property on the surface of a transparent electrode layer on the formed substrate is carried out. A flexible electric insulating layer is further laminated on a laminated rear surface electrode layer. It is most desirable that the substrate and the electric insulating layers are formed with the completely same material, in the same shape and the same size (same thickness).
JP63034660A 1987-02-20 1988-02-16 Flexible photodetector and manufacture thereof Pending JPS64774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63034660A JPS64774A (en) 1987-02-20 1988-02-16 Flexible photodetector and manufacture thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3880587 1987-02-20
JP62-38805 1987-02-20
JP63034660A JPS64774A (en) 1987-02-20 1988-02-16 Flexible photodetector and manufacture thereof

Publications (2)

Publication Number Publication Date
JPH01774A JPH01774A (en) 1989-01-05
JPS64774A true JPS64774A (en) 1989-01-05

Family

ID=26373490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63034660A Pending JPS64774A (en) 1987-02-20 1988-02-16 Flexible photodetector and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS64774A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421133A2 (en) * 1989-09-06 1991-04-10 Sanyo Electric Co., Ltd. Manufacturing method of a flexible photovoltaic device
JPH06334204A (en) * 1993-05-21 1994-12-02 Ind Technol Res Inst Preparation of flexible amorphous silicon solar cell
JP2001189475A (en) * 1999-12-30 2001-07-10 Honda Motor Co Ltd Manufacturing method of solar cell
JP2001189480A (en) * 1999-12-30 2001-07-10 Honda Motor Co Ltd Method for manufacturing solar cell
KR20180018373A (en) 2016-08-10 2018-02-21 신닛테츠 수미킨 가가쿠 가부시키가이샤 Polyimide precursor and polyimide made therefrom
WO2022070617A1 (en) 2020-09-29 2022-04-07 東洋紡株式会社 Layered body including inorganic substrate and polyamic acid cured product

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421133A2 (en) * 1989-09-06 1991-04-10 Sanyo Electric Co., Ltd. Manufacturing method of a flexible photovoltaic device
JPH06334204A (en) * 1993-05-21 1994-12-02 Ind Technol Res Inst Preparation of flexible amorphous silicon solar cell
JP2001189475A (en) * 1999-12-30 2001-07-10 Honda Motor Co Ltd Manufacturing method of solar cell
JP2001189480A (en) * 1999-12-30 2001-07-10 Honda Motor Co Ltd Method for manufacturing solar cell
KR20180018373A (en) 2016-08-10 2018-02-21 신닛테츠 수미킨 가가쿠 가부시키가이샤 Polyimide precursor and polyimide made therefrom
WO2022070617A1 (en) 2020-09-29 2022-04-07 東洋紡株式会社 Layered body including inorganic substrate and polyamic acid cured product

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