JPS6474773A - Insulated-gate field-effect device - Google Patents

Insulated-gate field-effect device

Info

Publication number
JPS6474773A
JPS6474773A JP62233007A JP23300787A JPS6474773A JP S6474773 A JPS6474773 A JP S6474773A JP 62233007 A JP62233007 A JP 62233007A JP 23300787 A JP23300787 A JP 23300787A JP S6474773 A JPS6474773 A JP S6474773A
Authority
JP
Japan
Prior art keywords
gate
substrate
load
electric field
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62233007A
Other languages
Japanese (ja)
Inventor
Yasutaka Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62233007A priority Critical patent/JPS6474773A/en
Publication of JPS6474773A publication Critical patent/JPS6474773A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To lower resistance at the time of operation, and to form solid constitution, in which device substrates are laminated in multilayers, by using a substance generating metal insulator transfer as the device substrate for an insulated gate field-effect device. CONSTITUTION:The number of carriers in a (La1-xSrx)2CuO4 thin-film device substrate 2 is varied by the load of Sr, and the substrate 2 is transferred to a superconductor when a certain fixed quantity of Sr is added. The load of Sr is made smaller than quantity transferring to superconductivity previously at that time, an electric field is applied to a gate electrode 5 through a gate oxide film 3 and the substrate 2 is transferred to the superconductor. Consequently, an insulator-superconductive metal transfer electric field can be controlled by the load of Sr and the thickness of a gate oxide film. When gate voltage giving the electric field of the transfer is applied to the gate electrode 5 and voltage is applied between a drain electrode 6 and a source electrode 4, superconducting currents are flowed through the source electrode 4 from the drain electrode 6 in the (La1-xSrx)2CuO4 film 2.
JP62233007A 1987-09-17 1987-09-17 Insulated-gate field-effect device Pending JPS6474773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62233007A JPS6474773A (en) 1987-09-17 1987-09-17 Insulated-gate field-effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62233007A JPS6474773A (en) 1987-09-17 1987-09-17 Insulated-gate field-effect device

Publications (1)

Publication Number Publication Date
JPS6474773A true JPS6474773A (en) 1989-03-20

Family

ID=16948354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62233007A Pending JPS6474773A (en) 1987-09-17 1987-09-17 Insulated-gate field-effect device

Country Status (1)

Country Link
JP (1) JPS6474773A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01207982A (en) * 1988-01-15 1989-08-21 Internatl Business Mach Corp <Ibm> Field effect device having superconducting channel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283178A (en) * 1987-05-15 1988-11-21 Toshiba Corp Superconducting transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283178A (en) * 1987-05-15 1988-11-21 Toshiba Corp Superconducting transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01207982A (en) * 1988-01-15 1989-08-21 Internatl Business Mach Corp <Ibm> Field effect device having superconducting channel

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