JPS6474773A - Insulated-gate field-effect device - Google Patents
Insulated-gate field-effect deviceInfo
- Publication number
- JPS6474773A JPS6474773A JP62233007A JP23300787A JPS6474773A JP S6474773 A JPS6474773 A JP S6474773A JP 62233007 A JP62233007 A JP 62233007A JP 23300787 A JP23300787 A JP 23300787A JP S6474773 A JPS6474773 A JP S6474773A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- substrate
- load
- electric field
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To lower resistance at the time of operation, and to form solid constitution, in which device substrates are laminated in multilayers, by using a substance generating metal insulator transfer as the device substrate for an insulated gate field-effect device. CONSTITUTION:The number of carriers in a (La1-xSrx)2CuO4 thin-film device substrate 2 is varied by the load of Sr, and the substrate 2 is transferred to a superconductor when a certain fixed quantity of Sr is added. The load of Sr is made smaller than quantity transferring to superconductivity previously at that time, an electric field is applied to a gate electrode 5 through a gate oxide film 3 and the substrate 2 is transferred to the superconductor. Consequently, an insulator-superconductive metal transfer electric field can be controlled by the load of Sr and the thickness of a gate oxide film. When gate voltage giving the electric field of the transfer is applied to the gate electrode 5 and voltage is applied between a drain electrode 6 and a source electrode 4, superconducting currents are flowed through the source electrode 4 from the drain electrode 6 in the (La1-xSrx)2CuO4 film 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62233007A JPS6474773A (en) | 1987-09-17 | 1987-09-17 | Insulated-gate field-effect device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62233007A JPS6474773A (en) | 1987-09-17 | 1987-09-17 | Insulated-gate field-effect device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474773A true JPS6474773A (en) | 1989-03-20 |
Family
ID=16948354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62233007A Pending JPS6474773A (en) | 1987-09-17 | 1987-09-17 | Insulated-gate field-effect device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474773A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01207982A (en) * | 1988-01-15 | 1989-08-21 | Internatl Business Mach Corp <Ibm> | Field effect device having superconducting channel |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63283178A (en) * | 1987-05-15 | 1988-11-21 | Toshiba Corp | Superconducting transistor |
-
1987
- 1987-09-17 JP JP62233007A patent/JPS6474773A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63283178A (en) * | 1987-05-15 | 1988-11-21 | Toshiba Corp | Superconducting transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01207982A (en) * | 1988-01-15 | 1989-08-21 | Internatl Business Mach Corp <Ibm> | Field effect device having superconducting channel |
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