JPS6473229A - Infrared detector - Google Patents

Infrared detector

Info

Publication number
JPS6473229A
JPS6473229A JP62231456A JP23145687A JPS6473229A JP S6473229 A JPS6473229 A JP S6473229A JP 62231456 A JP62231456 A JP 62231456A JP 23145687 A JP23145687 A JP 23145687A JP S6473229 A JPS6473229 A JP S6473229A
Authority
JP
Japan
Prior art keywords
field effect
transistor
detector
voltage
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62231456A
Other languages
Japanese (ja)
Other versions
JPH0451775B2 (en
Inventor
Akimasa Tanaka
Akinaga Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP62231456A priority Critical patent/JPS6473229A/en
Publication of JPS6473229A publication Critical patent/JPS6473229A/en
Publication of JPH0451775B2 publication Critical patent/JPH0451775B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To achieve a lower cost with a reduction in the number of parts, by employing a field effect transistor as a high resistance element and a load resistance connected in parallel to a pyroelectric detector. CONSTITUTION:An infrared detector includes insulation type field effect transistors T3 and T3 and a junction type field effect transistor T1 to be formed as one integrated element. When a pyroelectric type detector S is irradiated with infrared rays, a voltage is generated by a polarization effect of the pyroelectric detector S. The variation of the voltage thus generated is determined as that of a gate voltage of the junction type field effect type transistor T1 thereby taking out as output signal a change in current of the junction type field effect transistor T1 due to a change in the gate voltage from the field effect type transistor T3 composing a load resistance.
JP62231456A 1987-09-14 1987-09-14 Infrared detector Granted JPS6473229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62231456A JPS6473229A (en) 1987-09-14 1987-09-14 Infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231456A JPS6473229A (en) 1987-09-14 1987-09-14 Infrared detector

Publications (2)

Publication Number Publication Date
JPS6473229A true JPS6473229A (en) 1989-03-17
JPH0451775B2 JPH0451775B2 (en) 1992-08-20

Family

ID=16923799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231456A Granted JPS6473229A (en) 1987-09-14 1987-09-14 Infrared detector

Country Status (1)

Country Link
JP (1) JPS6473229A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013057632A (en) * 2011-09-09 2013-03-28 Citizen Electronics Co Ltd Pyroelectric infrared sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013057632A (en) * 2011-09-09 2013-03-28 Citizen Electronics Co Ltd Pyroelectric infrared sensor

Also Published As

Publication number Publication date
JPH0451775B2 (en) 1992-08-20

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees