JPS6472998A - Heat treatment of compound semiconductor single crystal - Google Patents
Heat treatment of compound semiconductor single crystalInfo
- Publication number
- JPS6472998A JPS6472998A JP23150487A JP23150487A JPS6472998A JP S6472998 A JPS6472998 A JP S6472998A JP 23150487 A JP23150487 A JP 23150487A JP 23150487 A JP23150487 A JP 23150487A JP S6472998 A JPS6472998 A JP S6472998A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- vapor pressure
- semiconductor single
- single crystal
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To uniformize the electrical characteristics and optical characteristics of a crystal ingot while preventing the decrease in the resistance thereof by putting a grown compd. semiconductor single crystal into a specific vapor pressure atmosphere maintained at a specified temp. CONSTITUTION:The compd. semiconductor single crystal is maintained at the specified temp. in the temp. range of 700 deg.C-m.p. after the growth and the grown crystal body is placed in the atmosphere applied with the vapor pressure in a 10-60 times range of the equiv. vapor pressure of the high vapor pressure component elements at the specified temp. The heat treatment is executed while the excess vapor pressure is exerted to the crystal according to this method and, therefore, the evaporation of the high vapor pressure component elements from the crystal surface is prevented. The impurity atoms and intrinsic defects sticking to the dislocation in the crystal are redistributed while the decrease in the resistance by the stoichiometry collapsing particularly at the end part of the wafer and the increase of the fluctuation in the resistivity are prevented. The electrical characteristics and optical characteristics are thereby uniformized over the entire part of the crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231504A JPH07115999B2 (en) | 1987-09-14 | 1987-09-14 | Heat treatment method for compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231504A JPH07115999B2 (en) | 1987-09-14 | 1987-09-14 | Heat treatment method for compound semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6472998A true JPS6472998A (en) | 1989-03-17 |
| JPH07115999B2 JPH07115999B2 (en) | 1995-12-13 |
Family
ID=16924529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62231504A Expired - Lifetime JPH07115999B2 (en) | 1987-09-14 | 1987-09-14 | Heat treatment method for compound semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07115999B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522375A (en) * | 1975-06-20 | 1977-01-10 | Cominco Ltd | Crystal of aluminum arsenide and method of making the same |
| JPS61106500A (en) * | 1984-10-30 | 1986-05-24 | Sumitomo Electric Ind Ltd | Method for annealing compound semiconductor substrate |
| JPS6270300A (en) * | 1985-09-19 | 1987-03-31 | Toshiba Corp | Semi-insulating gaas single crystal |
-
1987
- 1987-09-14 JP JP62231504A patent/JPH07115999B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522375A (en) * | 1975-06-20 | 1977-01-10 | Cominco Ltd | Crystal of aluminum arsenide and method of making the same |
| JPS61106500A (en) * | 1984-10-30 | 1986-05-24 | Sumitomo Electric Ind Ltd | Method for annealing compound semiconductor substrate |
| JPS6270300A (en) * | 1985-09-19 | 1987-03-31 | Toshiba Corp | Semi-insulating gaas single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07115999B2 (en) | 1995-12-13 |
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