JPS6465099A - Production of gaas single crystal - Google Patents

Production of gaas single crystal

Info

Publication number
JPS6465099A
JPS6465099A JP62221876A JP22187687A JPS6465099A JP S6465099 A JPS6465099 A JP S6465099A JP 62221876 A JP62221876 A JP 62221876A JP 22187687 A JP22187687 A JP 22187687A JP S6465099 A JPS6465099 A JP S6465099A
Authority
JP
Japan
Prior art keywords
melt
crystal
rear end
temp
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62221876A
Other languages
English (en)
Other versions
JPH0458440B2 (ja
Inventor
Seiji Mizuniwa
Akio Hattori
Toru Kurihara
Masayoshi Aoyama
Konichi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP62221876A priority Critical patent/JPS6465099A/ja
Priority to GB8819068A priority patent/GB2209480B/en
Priority to DE3830170A priority patent/DE3830170A1/de
Publication of JPS6465099A publication Critical patent/JPS6465099A/ja
Priority to US07/471,190 priority patent/US5007979A/en
Publication of JPH0458440B2 publication Critical patent/JPH0458440B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62221876A 1987-09-07 1987-09-07 Production of gaas single crystal Granted JPS6465099A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62221876A JPS6465099A (en) 1987-09-07 1987-09-07 Production of gaas single crystal
GB8819068A GB2209480B (en) 1987-09-07 1988-08-11 Method for the fabrication of a gaas single crystal
DE3830170A DE3830170A1 (de) 1987-09-07 1988-09-05 Verfahren zur herstellung eines gaas-einkristalls
US07/471,190 US5007979A (en) 1987-09-07 1990-01-26 Method of fabricating GaAs single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62221876A JPS6465099A (en) 1987-09-07 1987-09-07 Production of gaas single crystal

Publications (2)

Publication Number Publication Date
JPS6465099A true JPS6465099A (en) 1989-03-10
JPH0458440B2 JPH0458440B2 (ja) 1992-09-17

Family

ID=16773567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62221876A Granted JPS6465099A (en) 1987-09-07 1987-09-07 Production of gaas single crystal

Country Status (4)

Country Link
US (1) US5007979A (ja)
JP (1) JPS6465099A (ja)
DE (1) DE3830170A1 (ja)
GB (1) GB2209480B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100189304B1 (ko) * 1990-07-12 1999-06-01 야스카와 히데아키 와이어 임팩트식 도트 프린터용 인자헤드의 구성부품과 그 성형방법
US20240188261A1 (en) * 2022-12-01 2024-06-06 Bae Systems Information And Electronic Systems Integration Inc. METHOD OF PRODUCING LARGE EMI SHIELDED GaAs INFRARED WINDOWS

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1619963A1 (de) * 1967-11-23 1971-02-11 Femipari Ki Verfahren zur Herstellung von Galliumarsenid-Einkristallen fuer Halbleiterzwecke
US3520810A (en) * 1968-01-15 1970-07-21 Ibm Manufacture of single crystal semiconductors
US3623905A (en) * 1968-11-06 1971-11-30 Sumitomo Electric Industries Gallium compounds with reduced silicon contamination and a method of manufacturing them
US3630906A (en) * 1969-10-02 1971-12-28 Bell & Howell Co Gallium arsenide
IT943198B (it) * 1970-12-11 1973-04-02 Philips Nv Procedimento per la fabbricazione di monocristalli semiconduttori
DE2141876C3 (de) * 1971-08-20 1982-01-21 Metallgesellschaft Ag, 6000 Frankfurt Verfahren zur kontinuierlichen Verkokung stückiger Brennstoffe mit Spülgasen
JPS522257B2 (ja) * 1973-06-07 1977-01-20
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
FR2255949B1 (ja) * 1973-12-28 1976-10-08 Radiotechnique Compelec
DE2414776C2 (de) * 1974-03-27 1984-04-19 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Verbindung oder Legierung
DE2420876A1 (de) * 1974-04-30 1975-12-18 Wacker Chemitronic Verfahren zur herstellung von einoder polykristallinem galliumarsenid
GB2051607B (en) * 1979-07-05 1983-06-29 Philips Electronic Associated Method of making monocrystalline ternary semiconductor material
JPS56105638A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of circular gallium arsenide wafer
JPS5914382A (ja) * 1982-07-14 1984-01-25 Matsushita Electric Ind Co Ltd 直流モ−タの速度制御装置
JPS60112686A (ja) * 1983-11-22 1985-06-19 Nec Corp 固溶体単結晶の製造方法

Also Published As

Publication number Publication date
GB2209480B (en) 1991-10-02
GB2209480A (en) 1989-05-17
GB8819068D0 (en) 1988-09-14
JPH0458440B2 (ja) 1992-09-17
US5007979A (en) 1991-04-16
DE3830170A1 (de) 1989-03-16
DE3830170C2 (ja) 1993-05-13

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees