JPS646395A - Manufacture of thin film el panel - Google Patents
Manufacture of thin film el panelInfo
- Publication number
- JPS646395A JPS646395A JP62159987A JP15998787A JPS646395A JP S646395 A JPS646395 A JP S646395A JP 62159987 A JP62159987 A JP 62159987A JP 15998787 A JP15998787 A JP 15998787A JP S646395 A JPS646395 A JP S646395A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etchant
- emitter layer
- rmh4
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 150000003863 ammonium salts Chemical class 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
PURPOSE:To prevent etching at an exposed part of an emitter layer by using etchant which contains ammonium salt shown by (RmH4-mN)OH(m=0, 1, 2, 3, 4) as a main component for etching of an Al film. CONSTITUTION:An EL emitter layer 4 provided on a board 1 consists of alkali earth sulfide and the first electrode group 3 consists of a transparent conductive film 2 and the second electrode group 5 consists of an Al film 6. And the second electrode 5 is etched by etchant which contains ammonium slat shown by (RmH4-mN)OH(m=0, 1, 2, 3, 4, R is alkyl group) as a main component. Hereby, the part of the emitter layer exposed through the pin hole of the second insulation layer is prevented from being damaged by etchant, when the Al film is etched to process into stripe shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159987A JP2605720B2 (en) | 1987-06-26 | 1987-06-26 | Method for manufacturing thin-film EL panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159987A JP2605720B2 (en) | 1987-06-26 | 1987-06-26 | Method for manufacturing thin-film EL panel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS646395A true JPS646395A (en) | 1989-01-10 |
JP2605720B2 JP2605720B2 (en) | 1997-04-30 |
Family
ID=15705521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62159987A Expired - Fee Related JP2605720B2 (en) | 1987-06-26 | 1987-06-26 | Method for manufacturing thin-film EL panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2605720B2 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5128589A (en) * | 1974-09-04 | 1976-03-10 | Matsushita Electric Ind Co Ltd | Denbahatsukokeikotainoseizohoho |
JPS5589380A (en) * | 1978-12-27 | 1980-07-05 | Dainippon Toryo Co Ltd | Treatment of fluorescent substance emitting light in electric field |
JPS5927497A (en) * | 1982-08-04 | 1984-02-13 | シャープ株式会社 | Method of forming electrode of thin film el element |
JPS61260594A (en) * | 1985-05-15 | 1986-11-18 | 松下電器産業株式会社 | Manufacture of multicolor emission el element |
-
1987
- 1987-06-26 JP JP62159987A patent/JP2605720B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5128589A (en) * | 1974-09-04 | 1976-03-10 | Matsushita Electric Ind Co Ltd | Denbahatsukokeikotainoseizohoho |
JPS5589380A (en) * | 1978-12-27 | 1980-07-05 | Dainippon Toryo Co Ltd | Treatment of fluorescent substance emitting light in electric field |
JPS5927497A (en) * | 1982-08-04 | 1984-02-13 | シャープ株式会社 | Method of forming electrode of thin film el element |
JPS61260594A (en) * | 1985-05-15 | 1986-11-18 | 松下電器産業株式会社 | Manufacture of multicolor emission el element |
Also Published As
Publication number | Publication date |
---|---|
JP2605720B2 (en) | 1997-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0236123A3 (en) | A semiconductor device and method for preparing the same | |
JPS56160740A (en) | Manufacture of thin-film field type cold cathode | |
JPS57130490A (en) | Semiconductor laser device | |
EP0403936A3 (en) | Method for producing a conductive oxide pattern | |
JPS646395A (en) | Manufacture of thin film el panel | |
JPS5440079A (en) | Plasma etching method | |
JPS6454775A (en) | Manufacture of thin film element | |
JPS57199223A (en) | Manufacture of semiconductor device | |
JPS5310974A (en) | Etching method of oxide film | |
JPS6414710A (en) | Production of thin film magnetic head | |
JPS5396664A (en) | Color selecting electrode | |
JPS52119246A (en) | Production of electrode substrate for display elements | |
JPS5436185A (en) | Etching method of gaas system compound semiconductor crystal | |
SU609144A1 (en) | Method of manufacturing cathode-grid unit with autoelectronic cathode | |
JPS5321573A (en) | Etching method | |
JPS5534661A (en) | Manufacture of etching plate | |
JPS6484224A (en) | Electrode forming method | |
JPS5546989A (en) | Etching method of substrate by jet printing | |
JPS54109719A (en) | Manufacture of face plate for image pickup tube | |
JPS6453466A (en) | Formation of miniaturized electrode pattern | |
JPS5432976A (en) | Hard mask for electron beam | |
JPS5636181A (en) | Light emission semiconductor device | |
JPS5326590A (en) | Production of gallium phosphide light emission diod e | |
JPS56123376A (en) | Etching method | |
JPS6439051A (en) | Pin grid array |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |